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    LBC856 Price and Stock

    LRC Leshan Radio Co Ltd LBC856BLT1G

    Trans GP BJT PNP 65V 0.1A 3-Pin SOT-23 T/R (Alt: LBC856BLT1G)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Asia LBC856BLT1G 15,000 12 Weeks 3,000
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    LRC Leshan Radio Co Ltd LBC856BDW1T1G

    Trans GP BJT PNP 65V 0.1A 6-Pin SOT-363 T/R (Alt: LBC856BDW1T1G)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Asia LBC856BDW1T1G 12 Weeks 360,000
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    Win Source Electronics LBC856BDW1T1G 24,000
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    • 10000 $0.0186
    		Buy Now

    LBC856 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    LBC856 Leshan Radio Company General Purpose Transistors PNP Silicon Original PDF
    LBC856ALT1 Leshan Radio Company General Purpose Transistors PNP Silicon Original PDF
    LBC856ALT1G Leshan Radio Company General Purpose Transistor PNP Silicon Original PDF
    LBC856AWT1 Leshan Radio Company General Purpose Transistors PNP Silicon Original PDF
    LBC856BDW1T1 Leshan Radio Company Dual General Purpose Transistors Original PDF
    LBC856BLT1 Leshan Radio Company General Purpose Transistor PNP Silicon Original PDF
    LBC856BLT1G Leshan Radio Company General Purpose Transistor PNP Silicon Original PDF
    LBC856BWT1 Leshan Radio Company General Purpose Transistors PNP Silicon Original PDF

    LBC856 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    operation of BC557 TRANSISTOR

    Abstract: BC557 sot-23 BC556 sot package sot-23 BC558 SOT-23 LBC856BWT1G BC557 sot package sot-23 information of BC558 TRANSISTOR 3F t transistor BC558 base collector emitter BC856
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G LBC858AWT1G, BWT1G CWT1G These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/ SC–70 which is designed for low power surface mount


    Original     		PDF LBC856AWT1G, LBC857AWT1G, LBC858AWT1G, BC856 BC857 BC858 SC-70 operation of BC557 TRANSISTOR BC557 sot-23 BC556 sot package sot-23 BC558 SOT-23 LBC856BWT1G BC557 sot package sot-23 information of BC558 TRANSISTOR 3F t transistor BC558 base collector emitter BC856

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC856ALT1G Series • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V • ESD Rating – Machine Model: >400 V Pb-Free Packages are Available 3 1 MAXIMUM RATINGS TA = 25°C unless otherwise noted


    Original     		PDF LBC856ALT1G LBC856 LBC857 LBC858, LBC859

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC856ALT1 Series MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Value Unit Collector-Emitter Voltage VCEO –65 –45 –30 V Collector-Base Voltage VCBO –80 –50 –30 V VEBO –5.0 V


    Original     		PDF LBC856ALT1 LBC856 LBC857 LBC858, LBC859 LBC856ALT1

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G LBC858AWT1G, BWT1G CWT1G These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/ SC–70 which is designed for low power surface mount


    Original     		PDF LBC856AWT1G, LBC857AWT1G, LBC858AWT1G, BC856 BC857 BC858

    operation of BC557 TRANSISTOR

    Abstract: bc557 LBC856BDW1T1 sot-36
    Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC856*DW1T1 6 These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. • Device Marking:


    Original     		PDF LBC856 363/SC LBC856BDW1T1 LBC857BDW1T1 LBC857CDW1T1 LBC858BDW1T1 LBC858CDW1T1 OT-363 BC856 BC857 operation of BC557 TRANSISTOR bc557 LBC856BDW1T1 sot-36

    bc557

    Abstract: BC856 BC857 BC858 LBC856AWT1G LBC856BWT1G LBC857AWT1G LBC857BWT1G LBC858AWT1G LBC858BWT1G
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G LBC858AWT1G, BWT1G CWT1G These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/ SC–70 which is designed for low power surface mount


    Original     		PDF LBC856AWT1G, LBC857AWT1G, LBC858AWT1G, BC856 BC857 BC858 195mm 150mm 3000PCS/Reel bc557 BC856 BC857 BC858 LBC856AWT1G LBC856BWT1G LBC857AWT1G LBC857BWT1G LBC858AWT1G LBC858BWT1G

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G CWT1G LBC858AWT1G, BWT1G CWT1G These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/ SC–70 which is designed for low power surface mount


    Original     		PDF LBC856AWT1G, LBC857AWT1G, LBC858AWT1G, BC856 BC857 BC858

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC856ALT1G Series • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V • ESD Rating – Machine Model: >400 V We declare that the material of product compliance with


    Original     		PDF LBC856ALT1G LBC856 LBC857 LBC858, LBC859 LBC856ALT1G

    LBC856BWT1G

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G CWT1G LBC858AWT1G, BWT1G CWT1G S-LBC856AWT1G, BWT1G S-LBC857AWT1G, BWT1G CWT1G S-LBC858AWT1G, BWT1G CWT1G PNP Silicon These transistors are designed for general purpose


    Original     		PDF LBC856AWT1G, LBC857AWT1G, LBC858AWT1G, S-LBC856AWT1G, S-LBC857AWT1G, S-LBC858AWT1G, AEC-Q101 BC856 BC857 BC858 LBC856BWT1G

    LBC857CWT1G

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G CWT1G LBC858AWT1G, BWT1G CWT1G S-LBC856AWT1G, BWT1G S-LBC857AWT1G, BWT1G CWT1G S-LBC858AWT1G, BWT1G CWT1G General Purpose Transistors PNP Silicon These transistors are designed for general purpose


    Original     		PDF LBC856AWT1G, LBC857AWT1G, LBC858AWT1G, S-LBC856AWT1G, S-LBC857AWT1G, S-LBC858AWT1G, BC856 BC857 BC858 LBC857CWT1G

    bc557

    Abstract: bc556 equivalent bc557 package sot23 of pnp transistor BC557 free BC557 BC556 SOT BC556 sot package sot-23 BC557 SOT23
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC856AWT1, BWT1 LBC857AWT1, BWT1 LBC858AWT1, BWT1 CWT1 These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/ SC–70 which is designed for low power surface mount


    Original     		PDF LBC856AWT1, LBC857AWT1, LBC858AWT1, BC856 BC857 BC858 SC-70 OT-323 bc557 bc556 equivalent bc557 package sot23 of pnp transistor BC557 free BC557 BC556 SOT BC556 sot package sot-23 BC557 SOT23

    BC557 sot package sot-23

    Abstract: BC557 sot-23 BC556 sot package sot-23 BC558 SOT-23 SOT23 MARKING JC operation of BC557 TRANSISTOR 3B SOT 23 sot-23 body marking A 4 LBC* MARKING pk transistor marking sot23
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC856ALT1 Series • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V • ESD Rating – Machine Model: >400 V Pb-Free Packages are Available 3 1 MAXIMUM RATINGS TA = 25°C unless otherwise noted


    Original     		PDF LBC856ALT1 LBC856 LBC857 LBC858, LBC859 LBC856ALT1S-6/7 BC557 sot package sot-23 BC557 sot-23 BC556 sot package sot-23 BC558 SOT-23 SOT23 MARKING JC operation of BC557 TRANSISTOR 3B SOT 23 sot-23 body marking A 4 LBC* MARKING pk transistor marking sot23

    2x062h

    Abstract: gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062
    Text: Leshan Radio Company, Ltd. 2008 PRODUCTS CATALOGUE 目 录 CONTENT 开关二极管 SWITCHING DIODES. 1 1. SOD–923 Surface Mount Switching Diodes. 1


    Original     		PDF ZMM22 ZMM24 ZMM27 ZMM43 ZMM47 2x062h gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062

    LBAS16TW1T1G

    Abstract: list of transistor LMBT5551DW1T1G LBC846BPDW1T1G ME2N7002kw TRANSISTOR 1008-01 LBAT54DW1T1G LBC846ADW1T1G LMBT2222ADW1T1G LMUN5336DW1T1G
    Text: LESHAN RADIO COMPANY, LTD. Ver.A PRODUCT/PROCESS CHANGE NOTIFICATION TO CUSTOMER PCN Number: LNC 100801 PCN Issue Date: 5th Aug' 2010 Contact: Contact your local LRC Sales Office Phone: Change Title: Copper Wire replacing Gold Wire in the SC88 and SC88A Packages


    Original     		PDF SC88A LMUN5316DW1T1G LMUN5330DW1T1G LMUN5331DW1T1G LMUN5332DW1T1G LMUN5333DW1T1G LMUN5334DW1T1G LMUN5335DW1T1G LMUN5336DW1T1G LUMH14NDW1T1G LBAS16TW1T1G list of transistor LMBT5551DW1T1G LBC846BPDW1T1G ME2N7002kw TRANSISTOR 1008-01 LBAT54DW1T1G LBC846ADW1T1G LMBT2222ADW1T1G LMUN5336DW1T1G

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. We declare that the material of product compliance with RoHS requirements.


    Original     		PDF 363/SCâ AEC-Q101 LBC85* S-LBC85* OT-363 LBC856ADW1T1G= LBC856BDW1T1G= LBC857BDW1T1G= LBC857CDW1T1G= LBC858BDW1T1G=

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC85* DW1T1G 6 These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. We declare that the material of product compliance with RoHS requirements.


    Original     		PDF LBC85* 363/SCâ OT-363 LBC856ADW1T1G= LBC856BDW1T1G= LBC857BDW1T1G= LBC857CDW1T1G= LBC858BDW1T1G= LBC858CDW1T1G BC856

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC857CLT1G Series • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V • ESD Rating – Machine Model: >400 V We declare that the material of product compliance with


    Original     		PDF LBC857CLT1G LBC856 LBC857 LBC858, LBC859 LBC857CLT1G

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC85XBDW1T1G 6 These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. 5 4


    Original     		PDF LBC85XBDW1T1G 363/SCâ OT-363 LBC856BDW1T1G= LBC857BDW1T1G= LBC857CDW1T1G= LBC858BDW1T1G= LBC858CDW1T1G BC856 BC857

    LBC856BDW1T1G

    Abstract: LBC857CDW1T1G LBC858BDW1T1G BDW1T1G BC856 BC857 BC858 BC858CDW1T1G BDW1T1
    Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC85* DW1T1G 6 These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. We declare that the material of product compliance with RoHS requirements.


    Original     		PDF LBC85* 363/SC OT-363 LBC856BDW1T1G= LBC857BDW1T1G= LBC857CDW1T1G= LBC858BDW1T1G= LBC858CDW1T1G BC856 BC857 LBC856BDW1T1G LBC857CDW1T1G LBC858BDW1T1G BDW1T1G BC856 BC857 BC858 BC858CDW1T1G BDW1T1

    LBC857BLT1G

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC857CLT1G Series S-LBC857CLT1G Series PNP Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V • We declare that the material of product compliance with


    Original     		PDF LBC857CLT1G S-LBC857CLT1G AEC-Q101 LBC856 LBC857 LBC858, LBC859 LBC857BLT1G

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. LBC85* DW1T1G S-LBC85* DW1T1G


    Original     		PDF 363/SCâ LBC85* S-LBC85* AEC-Q101 OT-363 LBC856ADW1T1G= LBC856BDW1T1G= LBC857BDW1T1G= LBC857CDW1T1G= LBC858BDW1T1G=

    LBC857ALT1G

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC857CLT1G Series S-LBC857CLT1G Series PNP Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V • We declare that the material of product compliance with


    Original     		PDF LBC857CLT1G S-LBC857CLT1G AEC-Q101 LBC857CLT1G S-LBC857CLT1G OT-23 LBC857ALT1G

    LBC857CLT1G

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V • • ESD Rating – Machine Model: >400 V We declare that the material of product compliance with RoHS requirements.


    Original     		PDF AEC-Q101 LBC857CLT1G S-LBC857CLT1G LBC857CLT1G S-LBC857CLT1G OT-23

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC85* DW1T1G S-LBC85* DW1T1G 6 These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications.


    Original     		PDF LBC85* S-LBC85* 363/SCâ OT-363 LBC856ADW1T1G= LBC856BDW1T1G= LBC857BDW1T1G= LBC857CDW1T1G= LBC858BDW1T1G= LBC858CDW1T1G