LC 5012 M Search Results

LC 5012 M Result Highlights (5)

Part	Manufacturer	Description
PQU650-12P	Murata Manufacturing Co Ltd	AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P
IH5012CDE	Rochester Electronics LLC	SPST, 4 Func, 1 Channel, CDIP16
IH5012MDE/B	Rochester Electronics LLC	IH5012 - SPST, 4 Func, 1 Channel
50122-5128JLF	Amphenol Communications Solutions	High Pin Count, Backplane Connectors, Header, Right Angle, Through Hole, 4 Row, 128 Positions, 0 Guide Pin, 2.54mm (0.100in) Pitch
50122-5232JLF	Amphenol Communications Solutions	High Pin Count, Backplane Connectors, Header, Right Angle, Through Hole, 4 Row, 232 Positions, 0 Guide Pin, 2.54mm (0.100in) Pitch

LC 5012 M Price and Stock

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Panduit Corp LCMA50-12-L Terminals Copper Comp Metric Lug, 1 Hole, 5
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Mouser Electronics	LCMA50-12-L		722			1 $5.43 10 $5.04 100 $4.62 1000 $4.55 10000 $4.55	Buy Now
Samtec Inc TFM-150-12-S-D-LC Headers & Wire Housings High-Reliability Tiger Eye Terminal Strips, .050" Pitch Free Sample
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Mouser Electronics	TFM-150-12-S-D-LC		8			1 $13.69 10 $13.69 100 $11.8 1000 $7.95 10000 $7.95	Buy Now
Samtec Inc TFM-150-12-SM-D-LC Headers & Wire Housings High-Reliability Tiger Eye Terminal Strips, .050" Pitch Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	TFM-150-12-SM-D-LC					1 $13.69 10 $13.69 100 $11.8 1000 $7.95 10000 $7.95	Get Quote
Panduit Corp LCMA150-12-X Terminals Copper Comp Metric Lug, 1 Hole, 1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	LCMA150-12-X					1 $20.19 10 $18.85 100 $17.52 1000 $17.02 10000 $17.02	Get Quote
Samtec Inc TFM-150-12-S-D-LC.MY Headers & Wire Housings High-Reliability Tiger Eye Terminal Strips, .050" Pitch Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	TFM-150-12-S-D-LC.MY					1 $20.2 10 $20.2 100 $17.95 1000 $12.86 10000 $12.86	Get Quote

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LC 5012 M Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
GR-253-CORE Abstract: STM-64 T923CFAA TA-TSY-000983 TR-NWT-000468 NUC4 Text: a8e re AdLib OCR Evaluation systems Advance Data Sheet, Rev. 1 December 2001 T92-Type 10 Gbits/s 1300 nm Uncooled DFB Laser Transmitter . Normalized laser back-facet monitor output . Laser degrade alarm . Clock-select input" . Transmitter disable input . SC, FC-PC, and LC optical connector options	Original	T92-Type 24-pin OC-192 STM-64 DS01-0850PTO-1 DS01-0850PTO) GR-253-CORE STM-64 T923CFAA TA-TSY-000983 TR-NWT-000468 NUC4	PDF
2N1047 Abstract: 2N1047B 2N1050B 1049B 2N1050 2n1050a 10S0B 250PA120 2N1049 lc 5012 m Text: TYPES 2N1047 THRU 2N1050 2N1047A THRU2N1050A, 2N1047B THRU 2N1050B N-P-N TRIPLE-DIFFUSED PLANAR SILICON POWER TRANSISTORS Sr 3m m vi FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS Z at V CE = 40 V, Tc = O 9 5 • Dissipation Capability in excess of 22 W	OCR Scan	2N1047 2N1050 2N1047A THRU2N1050A, 2N1047B 2N1050B 1049B 2n1050a 10S0B 250PA120 2N1049 lc 5012 m	PDF
2N2659 Abstract: 2N2660 2N2662 2N2665 2N2664 2N2668 Germanium Transistor Texas Germanium 2N2667 c 2665 transistor Text: TYPES 2N2659, 2N2660, 2N2661, 2N2662, 2N2663, 2N2664 2N2665, 2N2666, 2N2667, 2N2668, 2N2669, 2N2670 _P-N-P AUOY-JUNCTION GERMANIUM MEDIUM-POWER TRANSISTORS m < * 2 c- 5 ¡1 5 50-, 70», or 9 0 -VOLT UNITS Guaranteed l« x at 85°C ° * 2 15 WATTS at 2 5 'C CASE TEMPERATURE	OCR Scan	2N2659, 2N2660, 2N2661, 2N2662, 2N2663, 2N2664 2N2665, 2N2666, 2N2667, 2N2668, 2N2659 2N2660 2N2662 2N2665 2N2668 Germanium Transistor Texas Germanium 2N2667 c 2665 transistor	PDF
DIODE 2N4002 Abstract: 2N4002 2N4003 TEXAS 2N4003 Text: TYPES 2N4002, 2N4003 N-P-N EPITAXIAL PLANAR SILICON POWER TRANSISTORS FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS s I ° z S 2 3 s " * \| 30-A Rated Continuous Collector Current 100 Watts at 100°C Case Temperature Maximum V cE sat of 1.2 V at 30 A	OCR Scan	2N4002, 2N4003 DIODE 2N4002 2N4002 2N4003 TEXAS	PDF
2N4001 diode Abstract: diode 2n4001 2n4001 diode 2N4000 2N4000 Transistor 2N4001 2n4001 TRANSISTOR EM 5135 diode Text: TYPES 2N4000, 2N4001 N-P-N EPITAXIAL PLANAR SILICON POWER TRANSISTORS FOR HIGH-SPEED POWER SWITCHING APPLICATIONS o f TM • 15 W at 100°C Case Temperature £\| • Max VcE iai of 0.3 V at 0.5 • Max ton of 300 nsat 0.5 A lc • Min f T of 40 MHz Alc g \|	OCR Scan	2N4000, 2N4001 2N4000 2N4001 diode diode 2n4001 diode 2N4000 Transistor 2N4001 2n4001 TRANSISTOR EM 5135 diode	PDF
2N3551 Abstract: npn t TIX210 Text: TYPES 2N3551, 2N3552 N-P-N TRIPLE-DIFFUSED MESA SILICON TRANSISTORS TYPES 2N3551. 2N3552 BULLETIN NO. DL-S 715883, AUGUST REVISED DECEMBER 1971 HIGH-SPEED POWER SWITCH, ISOLATED COLLECTOR FORMERLY TIX210, TIX211 • 40 Watts at 100°C Case Temperature • Maximum rCs of 0.1 Ohm at 10 Amperes lc	OCR Scan	2N3551, 2N3552 2N3551. TIX210, TIX211 2N3551 2N3552 7S222 2N3551 npn t TIX210	PDF
Untitled Abstract: No abstract text available Text: □IXYS MWI 50-12 A7 Advanced Technical Information IGBT Modules Sixpack IC25 v ces = 85 A = 1200 V V C E s a t ty p . = 2 . 2 V Features Symbol Conditions Maximum Ratings V CES Tj = 25°C to 150°C 1200 V V CGR Tj = 25°C to 150°C; RGE = 20 k£i 1200 V	OCR Scan		PDF
2N2243 Abstract: 2N2193A 2N2243A Text: TYPES * J M * 2N2243, 2N2243A N -P -N SILICON TRANSISTORS B U L L E T IN NO . D L -S 733571, M A R C H 1 9 6 3 - R E V IS E O M ARC H 1973 F O R M E D IU M -P O W E R S W IT C H IN G A N D A M P L IF IE R A P P L IC A T IO N S • High Breakdown Voltage Combined with	OCR Scan	2N2243, 2N2243A 2N2192 2N2192A 7S222 2N2243 2N2193A	PDF
TI159 Abstract: TI-162 AF267 Germanium Transistor Texas Germanium 160 germanium transistor Text: TYPES TI159, TI 160, TI 161, TI162 P-N-P ALL0Y-JUNCTI0N GERMANIUM MEDIUM-POWER TRANSISTORS NO. DL-S 634413, DECEMBER 1963 The transistors a re in h erm etically-sealed w e ld e d leads. A p p ro x im a te weight: 4.8 gram s. cases with glass-to-m etal seals betw een case a n d	OCR Scan	TI159, TI162 TI161, TI159 TI-162 AF267 Germanium Transistor Texas Germanium 160 germanium transistor	PDF
Untitled Abstract: No abstract text available Text: PN2369A / MMBT2369A / MMPQ2369 D iscrete P O W E R & S ig n a l T e c h n o lo g ie s National Semiconductor PN2369A MMBT2369A SOT-23 MMPQ2369 B SOIC-16 Mark: 1S NPN Switching Transistor This device is designed for high speed saturation switching at collector	OCR Scan	PN2369A MMBT2369A MMPQ2369 PN2369A MMBT2369A OT-23 SOIC-16	PDF
transistor LT 5222 Abstract: transistor LT 5221 2N5333 lt 5217 LT 5219 Text: TYPE 2N5333 P-N-P EPITAXIAL PLANAR SILICON POWER TRANSISTOR F O R P O W E R -A M P L IF IE R A N D H IG H -S P E E D -S W IT C H IN G A P P L IC A T I O N S D E S IG N E D F O R C O M P L E M E N T A R Y U S E W IT H 2 N 4 3 0 0 • 15 W • M a x V CE\|i0ll o f 0 .4 5 V a t 1 A l c	OCR Scan	2N5333 --OFTAI15 transistor LT 5222 transistor LT 5221 lt 5217 LT 5219	PDF
2N1046 Abstract: germanium power transistor diode germanium tu 38 f Germanium Transistor Texas Germanium 639 TRANSISTOR PNP Germanium power diode germanium tu 38 e Text: TYPE 2N1046 P-N-P ALLOY-DIFFUSED GERMANIUM POWER TRANSISTOR HIGH-FREQUENCY POWER TRANSISTOR FOR MILITARY AND INDUSTRIAL APPLICATIONS 5H %I P* mechanical data This transistor is in a p recision-w elded, herm etically sealed enclosure. The mounting b ase provides an	OCR Scan	2N1046 DC-11 germanium power transistor diode germanium tu 38 f Germanium Transistor Texas Germanium 639 TRANSISTOR PNP Germanium power diode germanium tu 38 e	PDF
2N2988 Abstract: 2N2967 2N2987 2N2994 2N2989 2N2993 2N2991 EL 2n25 2N25 2N2990 Text: TYPES 2N2987 THRU 2N2994 N-P-N TRIPLE-DIFFUSED PLANAR SILICON POWER TRANSISTORS TYPES 2N2987 THRU 2N2994 BULLETIN NO. Dl-S 6810506 , DECEMBER HIGH-FREQUENCY INTERMEDIATE-POWER TRANSISTORS • 15 Watts at 100°C Case Temperature • Typ VcE tat of 0.2 V at 200 mA	OCR Scan	2N2987 2N2994 2N2991 2N2988 2N2967 2N2989 2N2993 2N2991 EL 2n25 2N25 2N2990	PDF
2N4301 Abstract: No abstract text available Text: TYPE 2N4301 N-P-N EPITAXIAL PLANAR SILICON POWER TRANSISTOR FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS • 50 W at 100°C Case Temperature • Max V£E Sat of 0.4 V at 5 A lc i l • tyP on °f ISO ns at 5 A l( • Min fT of 40 MHz m echanical d ata	OCR Scan	2N4301 T0-61	PDF

lt 5237 Abstract: 2N5390 Text: TYPE 2N5390 N-P-N DARLINGTON-CONNECTED PLANAR SILICON POWER TRANSISTOR • Very High Gain — 1000 Min at 5 A • High-Speed Switching — 0.3 ¡j . s Typ ton \| 3 h> Z “ 55 p ° ‘ d e v ic e sc h e m a tic o * m e c h a n ic a l d a t a 5 'a b s o l u t e m a x im u m r a t in g s a t 2 5 ° C c a se t e m p e r a t u r e u n le ss o th e r w is e n o te d	OCR Scan	2N5390 lt 5237	PDF
2N1907 Abstract: 2n1908 A97T Texas Germanium PW 2N GERMANIUM PNP LOW POWER TRANSISTORS 2NI907 Germanium power Germanium PNP - Low Power Transistors Text: TYPES 2NI907, 2N1908 P-N-P ALLOY-DIFFUSED GERMANIUM POWER TRANSISTORS HIGH-FREQUENCY POWER TRANSISTORS Zz for z : p s MILITARY AND INDUSTRIAL APPLICATIONS mechanical data These transistors are in precision w elded, herm etically sealed enclosures. The mounting base provides an	OCR Scan	2NI907, 2N1908 DC-11 2N1907 A97T Texas Germanium PW 2N GERMANIUM PNP LOW POWER TRANSISTORS 2NI907 Germanium power Germanium PNP - Low Power Transistors	PDF
2N5387 Abstract: 2N5388 C 5388 2N5389 LT 5233 Text: TYPES 2N5387, 2N5388, 2N5389 N-P-N TRIPLE-DIFFUSED MESA SILICON POWER TRANSISTORS CD - I FOR POWER-AMPLIFIER APPLICATIONS 1 A * m e c h a n ic a l d a t a THE C O L LE C T O R IS IN ELEC TRICAL C O N T A C T W IT H THE C A S E S S “*AL L JEDEC T0-&1 D IM E N S IO N S	OCR Scan	2N5387, 2N5388, 2N5389 2N5387 2N5388 C 5388 LT 5233	PDF
2N512 Abstract: Texas Germanium 2N512B 5 amp germanium pnp Germanium Amplifier Germanium Transistor GERMANIUM PNP LOW POWER TRANSISTORS 2N512A Germanium power Text: TYPES 2N512, 2N512A, AND 2N512B P-N-P ALLOY-JUNCTION GERMANIUM HIGH-POWER TRANSISTORS T Y P E S 2N 512, 2 N 512A , and 2 N 5 1 2 B B U L L E T IN NO. DL-S 611472, MARCH 4 0 , 60, or 80 VOLTS 15-Amp Collector Current 150-Watt Dissipation LOW lco LOW VK LOW THERMAL RESISTANCE	OCR Scan	2N512, 2N512A, 2N512B 15-Amp 150-Watt 7S222 2N512 Texas Germanium 5 amp germanium pnp Germanium Amplifier Germanium Transistor GERMANIUM PNP LOW POWER TRANSISTORS 2N512A Germanium power	PDF
2N1038 Abstract: 2n2553 2N1040 2N1041 2n1039 2N2552 2N2557 ti 2N2553 2N2556 2N1036 Text: TYPES 2N1038, 2N1039, 2N1040, 2N1041 • 2N2552, 2N2553, 2N2554, 2N2555 • 2N2556, 2N2557, 2N2558, 2N2559 P-N-P ALLOY-JUNCTION GERMANIUM MEDIUM-POWER TRANSISTORS M3 I 5s :0B Zssp Guaranteed 4 0 -, 60 -. 8 0 -, or lOO-VOLT UNITS 20 WATTS AT 259C CASE TEMPERATURE	OCR Scan	2N1038, 2N1039, 2N1040, 2N1041 2N2552, 2N2553, 2N2554, 2N2555 2N2556, 2N2557, 2N1038 2n2553 2N1040 2N1041 2n1039 2N2552 2N2557 ti 2N2553 2N2556 2N1036	PDF
Diode LT 5228 Abstract: Diode LT 5230 transistor LT 5230 2N5386 L81400 0/Diode LT 5228 Text: TYPE 2N5386 P-N-P EPITAXIAL PLANAR SILICON POWER TRANSISTOR n FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH 2N4301 Z w O • 50 W at 100°C Case Temperature OB * • M ax V ce sat of 0 .6 V at 6 A l c • Typ t,„ of 230 ns at 6 A l c	OCR Scan	2N5386 2N4301 Diode LT 5228 Diode LT 5230 transistor LT 5230 L81400 0/Diode LT 5228	PDF
2N1718 Abstract: 2N1721 2N1714 2N1720 Text: TYPES 2N1714 THRU 2N1721 N-P-N TRIPLE-DIFFUSED PLANAR SILICON POWER TRANSISTORS H HIGH-FREQUENCY INTERMEDIATE-POWER TRANSISTORS Z z • 15 Watts at 100°C Case Temperature n • Typ V cE sai of 0.2 V at 200 mA • Typ V BE of 0.8 V at 200 mA ? * ¿i » • Typ fT of 50 MHz at 10 V, 100 mA	OCR Scan	2N1714 2N1721 2N1717 2N1718 2N1720	PDF
2n456a Abstract: 2N457A 2N458A 2N1022 2N1021 GERMANIUM PNP LOW POWER TRANSISTORS Texas Germanium Germanium power Germanium Power Transistors Text: TYPES 2N456A, 2N457A, 2N458A, 2N1021 AND2N1022 P-N-P ALLOY -JUNGION GERMANIUM POWER TRANSISTORS 310 j m C CHOICE OF 40v, 60v, 80v, 100v, or 120v DEVICES < < r r m *o - « m w 2 H ro 0 = Z Crt z £ LOW Ico HIGH BETA LOW Res LOW THERMAL RESISTANCE mz £ ? p	OCR Scan	2N456A, 2N457A, 2N458A, 2N1021 AND2N1022 2n456a 2N457A 2N458A 2N1022 GERMANIUM PNP LOW POWER TRANSISTORS Texas Germanium Germanium power Germanium Power Transistors	PDF
2n341 Abstract: No abstract text available Text: TYPES 2N339 THRU 2N343 N-P-N GROWN-JUNCTION SILICON TRANSISTORS BU LL ET IN NO. DL-S 733955, JUNE 1 9 6 3 -R E V lS E D M ARCH 1973 1 Watt at 25°C Case Temperature Designed for Audio and Servo Amplifier Applications m e ch a n ical d a ta The transistor is in an w eld ed p a c k a g e with glass-to-m etal hermetic seal betw een case a n d leads. Unit	OCR Scan	2N339 2N343 2N341 2n341	PDF
Untitled Abstract: No abstract text available Text: LC LC 5 0 ft / 5 KV LC 5 0 ft / 10 KV DC - 5 000 MHz LC 75 Q, / 5 KV GENERAL These three series of power connectors are not interchangeable with each other. The connectors of these series are interchangeable with connectors corresponding to the same US Specifications.	OCR Scan	MIL-C-3650 MIL-C-3650	PDF

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LC 5012 M Search Results

LC 5012 M Result Highlights (5)

LC 5012 M Price and Stock

Panduit Corp LCMA50-12-L

Samtec Inc TFM-150-12-S-D-LC

Samtec Inc TFM-150-12-SM-D-LC

Panduit Corp LCMA150-12-X

Samtec Inc TFM-150-12-S-D-LC.MY

LC 5012 M Datasheets Context Search

GR-253-CORE

2N1047

2N2659

DIODE 2N4002

2N4001 diode

2N3551

Untitled

2N2243

TI159

Untitled

transistor LT 5222

2N1046

2N2988

2N4301

lt 5237

2N1907

2N5387

2N512

2N1038

Diode LT 5228

2N1718

2n456a

2n341

Untitled