Hitachi DSA00280
Abstract: No abstract text available
Text: HM5251325C-75/A6/B6 512M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword x 32-bit × 4-bank PC/133, PC/100 SDRAM ADE-203-1245B Z Rev. 1.0 Nov. 16, 2001 Description The Hitachi HM5251325C is a 512-Mbit SDRAM organized as 4194304-word × 32-bit × 4-bank. All inputs
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HM5251325C-75/A6/B6
Hz/100
32-bit
PC/133,
PC/100
ADE-203-1245B
HM5251325C
512-Mbit
4194304-word
Hitachi DSA00280
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GM72V66841ET
Abstract: No abstract text available
Text: GM72V66841ET/ELT 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM Description The GM72V66841ET/ELT is a synchronous dynamic random access memory comprised of 67,108,864 memory cells and logic including input and output circuits operating synchronously
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GM72V66841ET/ELT
GM72V66841ET/ELT
BA0/A13
BA1/A12
TTP-54D)
TTP-54D
GM72V66841ET
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Untitled
Abstract: No abstract text available
Text: GM72V66441ET/ELT 4,194,304 WORD x 4 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM Description The GM72V66441ET/ELT is a synchronous dynamic random access memory comprised of 67,108,864 memory cells and logic including input and output circuits operating synchronously
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GM72V66441ET/ELT
GM72V66441ET/ELT
BA0/A13
BA1/A12
TTP-54D)
TTP-54D
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transistor a6f
Abstract: Hitachi DSA00164 Nippon capacitors
Text: HB52D48GB-F 32 MB Unbuffered SDRAM Micro DIMM 4-Mword x 64-bit, 100 MHz Memory Bus, 1-Bank Module 4 pcs of 4 M × 16 components PC100 SDRAM ADE-203-1149A (Z) Rev. 1.0 Jul. 7, 2000 Description The HB52D48GB is a 4M × 64 × 1 banks Synchronous Dynamic RAM Micro Dual In-line Memory Module
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HB52D48GB-F
64-bit,
PC100
ADE-203-1149A
HB52D48GB
64-Mbit
HM5264165FTT)
144-pin
transistor a6f
Hitachi DSA00164
Nippon capacitors
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Hitachi DSA00276
Abstract: Nippon capacitors
Text: HB52RF648DC-B, HB52RD648DC-B 512 MB Unbuffered SDRAM S.O.DIMM 64-Mword x 64-bit, 133/100 MHz Memory Bus, 2-Bank Module 16 pcs of 64 M × 4 components PC133/100 SDRAM ADE-203-1214A (Z) Preliminary Rev. 0.1 Oct. 20, 2000 Description The HB52RF648DC, HB52RD648DC are a 32M × 64 × 2 banks Synchronous Dynamic RAM Small Outline
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HB52RF648DC-B,
HB52RD648DC-B
64-Mword
64-bit,
PC133/100
ADE-203-1214A
HB52RF648DC,
HB52RD648DC
256-Mbit
HM5225805BTT/BLTT)
Hitachi DSA00276
Nippon capacitors
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Untitled
Abstract: No abstract text available
Text: HB52RF648DC-B, HB52RD648DC-B 512 MB Unbuffered SDRAM S.O.DIMM 64-Mword x 64-bit, 133/100 MHz Memory Bus, 2-Bank Module 16 pcs of 32 M × 8 components PC133/100 SDRAM E0083H20 (2nd edition) Preliminary Feb. 22, 2001 Description The HB52RF648DC, HB52RD648DC are a 32M × 64 × 2 banks Synchronous Dynamic RAM Small Outline
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HB52RF648DC-B,
HB52RD648DC-B
64-Mword
64-bit,
PC133/100
E0083H20
HB52RF648DC,
HB52RD648DC
256-Mbit
HM5225805BTB)
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B60 C100
Abstract: transistor a6f Hitachi DSA00164 Nippon capacitors
Text: HB52D88GB-F 64 MB Unbuffered SDRAM Micro DIMM 8-Mword x 64-bit, 100 MHz Memory Bus, 1-Bank Module 4 pcs of 8 M × 16 components PC100 SDRAM ADE-203-1148A (Z) Rev. 1.0 Jul. 4, 2000 Description The HB52D88GB is a 8M × 64 × 1 banks Synchronous Dynamic RAM Micro Dual In-line Memory Module
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HB52D88GB-F
64-bit,
PC100
ADE-203-1148A
HB52D88GB
128-Mbit
HM5212165FTD)
144-pin
B60 C100
transistor a6f
Hitachi DSA00164
Nippon capacitors
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Untitled
Abstract: No abstract text available
Text: HB52RF648DC-B, HB52RD648DC-B 512 MB Unbuffered SDRAM S.O.DIMM 64-Mword x 64-bit, 133/100 MHz Memory Bus, 2-Bank Module 16 pcs of 32 M × 8 components PC133/100 SDRAM E0083H40 (Ver. 4.0) Nov. 16, 2001 (K) Japan Description The HB52RF648DC, HB52RD648DC are a 32M × 64 × 2 banks Synchronous Dynamic RAM Small Outline
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HB52RF648DC-B,
HB52RD648DC-B
64-Mword
64-bit,
PC133/100
E0083H40
HB52RF648DC,
HB52RD648DC
256-Mbit
HM5225805BTB)
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transistor a6f
Abstract: A6F SURFACE MOUNT Hitachi DSA00164 Nippon capacitors
Text: HB52RD168GB-F 128 MB Unbuffered SDRAM Micro DIMM 16-Mword x 64-bit, 100 MHz Memory Bus, 1-Bank Module 16 pcs of 16 M × 4 components PC100 SDRAM ADE-203-1153A (Z) Rev. 1.0 Jun. 30, 2000 Description The HB52RD168GB is a 16M × 64 × 1 bank Synchronous Dynamic RAM Micro Dual In-line Memory
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HB52RD168GB-F
16-Mword
64-bit,
PC100
ADE-203-1153A
HB52RD168GB
64-Mbit
HM5264405FTB)
144pin
boa2100
transistor a6f
A6F SURFACE MOUNT
Hitachi DSA00164
Nippon capacitors
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A6F SURFACE MOUNT
Abstract: transistor a6f
Text: HB52D88GB-F 64 MB Unbuffered SDRAM Micro DIMM 8-Mword x 64-bit, 100 MHz Memory Bus, 1-Bank Module 4 pcs of 8 M × 16 components PC100 SDRAM E0010H10 (1st edition) (Previous ADE-203-1148A (Z) Jan. 19, 2001 Description The HB52D88GB is a 8M × 64 × 1 banks Synchronous Dynamic RAM Micro Dual In-line Memory Module
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HB52D88GB-F
64-bit,
PC100
E0010H10
ADE-203-1148A
HB52D88GB
128-Mbit
HM5212165FTD)
144-pin
A6F SURFACE MOUNT
transistor a6f
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HB52D48GB-A6F
Abstract: No abstract text available
Text: HB52D48GB-F EO 32 MB Unbuffered SDRAM Micro DIMM 4-Mword x 64-bit, 100 MHz Memory Bus, 1-Bank Module 4 pcs of 4 M × 16 components PC100 SDRAM L Description E0011H10 (1st edition) (Previous ADE-203-1149A (Z) Jan. 19, 2001 Features Pr The HB 52D48GB is a 4M × 64 × 1 banks S ynchronous Dyna mic R AM Micro Dua l In- line Memory Module
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HB52D48GB-F
64-bit,
PC100
E0011H10
ADE-203-1149A
52D48GB
64-Mbit
HM5264165FTT)
144-pin
HB52D48GB-A6F
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Untitled
Abstract: No abstract text available
Text: HB52RD168GB-F 128 MB Unbuffered SDRAM Micro DIMM 16-Mword x 64-bit, 100 MHz Memory Bus, 1-Bank Module 16 pcs of 16 M × 4 components PC100 SDRAM E0009H10 (1st edition) (Previous ADE-203-1153A (Z) Jan. 19, 2001 Description The HB52RD168GB is a 16M × 64 × 1 bank Synchronous Dynamic RAM Micro Dual In-line Memory
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HB52RD168GB-F
16-Mword
64-bit,
PC100
E0009H10
ADE-203-1153A
HB52RD168GB
64-Mbit
HM5264405FTB)
144pin
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Untitled
Abstract: No abstract text available
Text: HB52RF648DC-B, HB52RD648DC-B 512 MB Unbuffered SDRAM S.O.DIMM 64-Mword x 64-bit, 133/100 MHz Memory Bus, 2-Bank Module 16 pcs of 32 M × 8 components PC133/100 SDRAM E0083H40 (Ver. 4.0) Nov. 16, 2001 (K) Japan Description The HB52RF648DC, HB52RD648DC are a 32M × 64 × 2 banks Synchronous Dynamic RAM Small Outline
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HB52RF648DC-B,
HB52RD648DC-B
64-Mword
64-bit,
PC133/100
E0083H40
HB52RF648DC,
HB52RD648DC
256-Mbit
HM5225805BTB)
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Hitachi DSA00276
Abstract: Nippon capacitors
Text: HB52D48GB-F 32 MB Unbuffered SDRAM Micro DIMM 4-Mword x 64-bit, 100 MHz Memory Bus, 1-Bank Module 4 pcs of 4 M × 16 components PC100 SDRAM ADE-203-1149 (Z) Preliminary Rev. 0.0 Jan. 13, 2000 Description The HB52D48GB is a 4M × 64 × 1 banks Synchronous Dynamic RAM Micro Dual In-line Memory Module
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HB52D48GB-F
64-bit,
PC100
ADE-203-1149
HB52D48GB
64-Mbit
HM5264165FTT)
144-pin
M5264165F/HM5264805F/HM5264405F75/A60/B60
Hitachi DSA00276
Nippon capacitors
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Untitled
Abstract: No abstract text available
Text: HB52D48GB-F 32 MB Unbuffered SDRAM Micro DIMM 4-Mword x 64-bit, 100 MHz Memory Bus, 1-Bank Module 4 pcs of 4 M × 16 components PC100 SDRAM E0011H10 (1st edition) (Previous ADE-203-1149A (Z) Jan. 19, 2001 Description The HB52D48GB is a 4M × 64 × 1 banks Synchronous Dynamic RAM Micro Dual In-line Memory Module
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Original
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HB52D48GB-F
64-bit,
PC100
E0011H10
ADE-203-1149A
HB52D48GB
64-Mbit
HM5264165FTT)
144-pin
E0011H10
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Untitled
Abstract: No abstract text available
Text: Arc SHALL NOT BE OISCLOSEO. CCFIEO DR USEO FOR PROCUREMENT OR MAMF AC TL RE WITHXIT EXPRESS WRITTEN PERMISSION -10 -12 -13 -14 -15 -IB -17 -18 -19 -20 ASSEMBLE PER CDNN TYPE MATERIAL PL20 CJ20 BJ26 BJ29 PL40 CJ40 BJ4B BJ49 UPL20 UCJ20 UBJ26 UBJ29 UPL40 UCJ40
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UPL20
UCJ20
UBJ26
UBJ29
UPL40
UCJ40
UBJ49
UPL123
UPL122
1-044B-4
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NE553
Abstract: 5k trimpot mepco capacitor NE5539N SE5539 0405B 0581B NE5539D NE5539F SE5539F
Text: Philips Semiconductors RF Communications Products Product specification High frequency operational amplifier DESCRIPTION NE/SE5539 PIN CONFIGURATION The NE/SE5539 is a very wide bandwidth, high slew rale, monolithic operational amplifier for use in video amplifiers, RF amplifiers, and
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NE/SE5539
NE5539/SE5539
711002b
NE553
5k trimpot
mepco capacitor
NE5539N
SE5539
0405B
0581B
NE5539D
NE5539F
SE5539F
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74198
Abstract: ttl 74198 74198 shift register 74198 ttl 74198 pin diagram 1TN1 54198 Truth Table 74198 ScansUX987 ic+74198
Text: TTL/MSI 93198/54198, 74198 8-BIT SHIFT REGISTER TO BE ANNOUNCED DESCRIPTIO N — The 93198/54198, 74198 are Bidirectional Registers that are designed to incor porate virtually all of the features a system designer may want in a shift register. The 93198/54198,
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Untitled
Abstract: No abstract text available
Text: LG Semicon C o.,Ltd. GM72V66841ET/ELT 2m i n WQRD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM Description The GM72V66841ET/ELT is a synchronous dynamic random access memory comprised of 67,108,864 memory cells and logic including input and output circuits operating synchronously
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GM72V66841ET/ELT
GM72V66841ET/ELT
BA0/A13
BA1/A12
V66841ET/ELT
TTP-54D)
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a42e
Abstract: No abstract text available
Text: L ix S e m k M C o*,Lf.d, Description The GM72V66441ET/ELT is a synchronous dynamic random access memory comprised of 67,108,864 memory cells and logic including input and output circuits operating synchronously by referring to the positive edge of the externally
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GM72V66441ET/ELT
BA0/A13
TTP-54D)
a42e
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Untitled
Abstract: No abstract text available
Text: Preliminary GM72V66441ET/ELT 4 , 194,304 w o r d x 4 b i t x 4 b a n k L G S e m i c o n C o « ,L td « SYNCHRONOUS DYNAMIC RAM Description The GM72V66441ET/ELT is a synchronous dynamic random access memory comprised of 67,108,864 memory cells and logic including
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GM72V66441ET/ELT
GM72V66441ET/ELT
TTP-54D)
TTP-54D
0-53g
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Untitled
Abstract: No abstract text available
Text: G M 7 2 V 6 6 4 4 1 E T /E L T 2 m i n WQRD x 8 BIT x 4 BANK LG Semicon Co.,Ltd. SYNCHRONOUS DYNAMIC RAM Description The GM72V66441ET/ELT is a synchronous dynamic random access memory comprised of 67,108,864 memory cells and logic including input and output circuits operating synchronously
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GM72V66441ET/ELT
BA0/A13
BA1/A12
V66441ET/ELT
TTP-54D)
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3DA93D
Abstract: GM72V66841ET q649 TTP-54D
Text: Preliminary GM72V66841ET/ELT L G S e m ic o n C o«,L td« Description The GM72V66841ET/ELT is a synchronous dynamic random access memory comprised of 67,108,864 memory cells and logic including input and output circuits operating synchronously by referring to the positive edge of the externally
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GM72V66841ET/ELT
GM72V66841ET/ELT
PC133/PC100/PC66
143MHz
133MHz
125MHz)
143/133/125/100MHz
3DA93D
GM72V66841ET
q649
TTP-54D
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GM72V661641
Abstract: No abstract text available
Text: Preliminary G M 7 2 V 6 6 1 6 4 1 DI/DLI L G S e m ïc o n C o .,L td . Description TheGM72V661641 DI/DLIis a synchronous dynamic random access memory comprised of 67,108,864 memory cells and logic including input and output circuits operating synchronously by referring to the positive
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GM72V661641DI/DLI
TheGM72V661641
GM72V661641
PC100,
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