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    LD 915 Price and Stock

    JRH Electronics ZSS-112-05-L-D-915

    STACKING BOARD CONNECTOR, ELEVAT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ZSS-112-05-L-D-915 Bulk 99 1
    • 1 $6.58
    • 10 $6.58
    • 100 $6.58
    • 1000 $6.58
    • 10000 $6.58
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    JRH Electronics ZW-30-13-L-D-915-200

    STACKING BOARD CONNECTOR, ZW SER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ZW-30-13-L-D-915-200 Bulk 99 1
    • 1 $15.11
    • 10 $15.11
    • 100 $15.11
    • 1000 $15.11
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    JRH Electronics ZSS-125-05-L-D-915

    STACKING BOARD CONNECTOR, ELEVAT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ZSS-125-05-L-D-915 Bulk 98 1
    • 1 $13.04
    • 10 $13.04
    • 100 $13.04
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    JRH Electronics TW-36-12-L-D-915-085

    STACKING BOARD CONNECTOR, TW SER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TW-36-12-L-D-915-085 Bulk 95 1
    • 1 $22.6
    • 10 $22.6
    • 100 $22.6
    • 1000 $22.6
    • 10000 $22.6
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    JRH Electronics ZSS-112-05-L-D-915-LL

    STACKING BOARD CONNECTOR, ELEVAT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ZSS-112-05-L-D-915-LL Bulk 94 1
    • 1 $6.78
    • 10 $6.78
    • 100 $6.78
    • 1000 $6.78
    • 10000 $6.78
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    Find more LD 915 price and stock on Findchips.com

    LD 915 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MEXICO FUSE

    Abstract: 0545300000 9118290001 weidmuller fuse datasheet of blown fuse indicator transistor marking QB 250Vuc SMT10-60VUC 9999 ASK1
    Text: Datasheet ASK 1EN/LD, KDKS 1EN/LD and KDKS 1PE/LD I n d i c a t i n g F u s e Te r m i n a l B l o c k s The well known ASK 1EN/LD fuse block and its family members KDKS 1EN/LD and KDKS 1PE/LD have undergone a little face lift. • BFI (Blown Fuse Indicator) circuit using new high efficiency,


    Original     		PDF 0-60V 00-250V 10Vac/dc 100Vac/dc 58-pole MEXICO FUSE 0545300000 9118290001 weidmuller fuse datasheet of blown fuse indicator transistor marking QB 250Vuc SMT10-60VUC 9999 ASK1

    10-60Vac

    Abstract: No abstract text available
    Text: Datasheet ASK 1EN/LD, KDKS 1EN/LD and KDKS 1PE/LD I n d i c a t i n g F u s e Te r m i n a l B l o c k s The well known ASK 1EN/LD fuse block and its family members KDKS 1EN/LD and KDKS 1PE/LD have undergone a little face lift. • BFI (Blown Fuse Indicator) circuit using new high efficiency,


    Original     		PDF 0-60V 00-250V 10Vac/dc 100Vac/dc 12Vac/dc 111HA 115Vac/dc 15Vac/dc 141HI 10-60Vac

    Untitled

    Abstract: No abstract text available
    Text: 新製品 プロセスモニタ付 プロセスモニタ付LD照射光源 L11785-61P LD irradiation light source with process monitor LD照射光源（SPOLD）に モニタリング機能を付加し レーザ加工の『見える化』 を実現！ レーザ加工における管理


    Original     		PDF L11785-61P LAPL1018J01

    Untitled

    Abstract: No abstract text available
    Text: LD照射光源 L11785シリーズ LD Irradiation Light Source ファイバ出力型レーザダイオード モジュールと駆動回路及びペルチェ式 冷却機構をコンパクトにまとめた レーザ照射光源です。 照射ユニットの選択によりご希望の


    Original     		PDF L11785ã A11612ã A12803ã LAPL1012J01

    LC1 D12 wiring diagram

    Abstract: vhdl code for 8 bit ODD parity generator 74139 Dual 2 to 4 line decoder TTL XOR2 tig ac inverter circuit cd4rle LC1 D12 P7 CB4CLED sr4cled CB16CE
    Text: Libraries Guide Xilinx Unified Libraries Selection Guide Design Elements ACC1 to BYPOSC Design Elements (CAPTURE_SPARTAN2 to DECODE64) Design Elements (F5MAP to FTSRLE) Design Elements (GCLK to KEEPER) Design Elements (LD to NOR16) Design Elements (OAND2 to OXOR2)


    Original     		PDF DECODE64) NOR16) ROM32X1) XC2064, XC3090, XC4005, XC5210, XC-DS501 X7706 XC5200 LC1 D12 wiring diagram vhdl code for 8 bit ODD parity generator 74139 Dual 2 to 4 line decoder TTL XOR2 tig ac inverter circuit cd4rle LC1 D12 P7 CB4CLED sr4cled CB16CE

    X9265

    Abstract: TTL 7400 CB16CE Xilinx counter cb16ce ldpe 868 X4027 CB4CLED X8906 Xilinx Unified Libraries Selection Guide PRISM GT
    Text: Libraries Guide Xilinx Unified Libraries Selection Guide Design Elements ACC1 to BYPOSC Design Elements (CAPTURE_SPARTAN2 to DECODE64) Design Elements (F5MAP to FTSRLE) Design Elements (GCLK to KEEPER) Design Elements (LD to NOR16) Design Elements (OAND2 to OXOR2)


    Original     		PDF DECODE64) NOR16) ROM32X1) XC2064, XC3090, XC4005llowing X9265 TTL 7400 CB16CE Xilinx counter cb16ce ldpe 868 X4027 CB4CLED X8906 Xilinx Unified Libraries Selection Guide PRISM GT

    CB4CLED

    Abstract: vhdl code for 2-bit BCD adder CB4CLE TTL 7400 CC16CLE cb4ce code D24E XC400XL CB2CE CB16CE
    Text: Libraries Guide Xilinx Unified Libraries Selection Guide Design Elements ACC1 to BYPOSC Design Elements (CAPTURE_VIRTEX to DECODE64) Design Elements (F5MAP to FTSRLE) Design Elements (GCLK to KEEPER) Design Elements (LD to NOR16) Design Elements (OAND2 to OXOR2)


    Original     		PDF DECODE64) NOR16) ROM32X1) XC2064, XC3090, XC4005, XC5210, XC--90 CB4CLED vhdl code for 2-bit BCD adder CB4CLE TTL 7400 CC16CLE cb4ce code D24E XC400XL CB2CE CB16CE

    4069 NOT GATE IC

    Abstract: NEC LDMOS
    Text: 3.2 V, 3 W, L/S BAND NE5520379A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35.5 dBm TYP 1.5 – 0.2 4.2 Max Source • HIGH LINEAR GAIN: 16 dB TYP @ 915 MHz


    Original     		PDF NE5520379A GSM900 4069 NOT GATE IC NEC LDMOS

    J50 mosfet

    Abstract: LDMOS NEC
    Text: 3.2 V, 3 W, L/S BAND NE5520379A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35.5 dBm TYP 1.5 – 0.2 4.2 Max Source • HIGH LINEAR GAIN: 16 dB TYP @ 915 MHz


    Original     		PDF NE5520379A GSM900 24-Hour J50 mosfet LDMOS NEC

    J50 mosfet

    Abstract: MCH185A180JK GSM900 MCH185A4R7CK NE5520379A NE5520379A-T1A PT 4962 FET 4016 ldmos nec
    Text: 3.2 V, 3 W, L/S BAND NE5520379A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35.5 dBm TYP 1.5 – 0.2 4.2 Max Source • HIGH LINEAR GAIN: 16 dB TYP @ 915 MHz


    Original     		PDF NE5520379A NE5520379A J50 mosfet MCH185A180JK GSM900 MCH185A4R7CK NE5520379A-T1A PT 4962 FET 4016 ldmos nec

    4069 NOT GATE IC

    Abstract: GSM900 MCH185A180JK MCH185A4R7CK NE5520379A NE5520379A-T1A tc 9122 17339 NEC LDMOS ldmos nec
    Text: NEC'S 3.2 V, 3 W, L/S BAND NE5520379A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35.5 dBm TYP 1.5 – 0.2 4.2 Max Source • HIGH LINEAR GAIN: 16 dB TYP @ 915 MHz


    Original     		PDF NE5520379A NE5520379A NE5520379A-EVAL 4069 NOT GATE IC GSM900 MCH185A180JK MCH185A4R7CK NE5520379A-T1A tc 9122 17339 NEC LDMOS ldmos nec

    EG8504

    Abstract: transistor A1013 SEK1054B0A A1013 a1207 SEK1054B EPSON eg8504 eg8504c pcb lcd display connector cellular phone eg7502
    Text: TT002-09 LCD Modules for Mobile Communications Product Catalog October/2000 - March/2001 October,2000 LD Marketing & Engineering Group Seiko Epson Corporation A Change in Product Catalog TT002-09 of LCD Modules for Mobile Communications The change is as follows:


    Original     		PDF TT002-09 October/2000 March/2001 TT002-09) TCM-A1167 SED15E0. SED15E0 EG8504 transistor A1013 SEK1054B0A A1013 a1207 SEK1054B EPSON eg8504 eg8504c pcb lcd display connector cellular phone eg7502

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON POWER MOS FET NE5520379A 3.2 V OPERATION SILICON RF POWER LD-MOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier


    Original     		PDF NE5520379A NE5520379A

    NE5520379A

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET SILICON POWER MOS FET NE5520379A 3.2 V OPERATION SILICON RF POWER LD-MOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier


    Original     		PDF NE5520379A NE5520379A

    5 digit led display

    Abstract: head mounted display 50LH50
    Text: LED Type Optical Displacement Sensor LM10 HL-C1 LH-50 Light / Reflective Type MEASUREMENT SENSORS LH-50 SERIES LD LA-300 LA Light / Thru-beam Type HL-T1 Minute displacements measured with high precision by red ⅐⅐⅐ LED beam Conforming to EMC Directive


    Original     		PDF LH-50 LA-300 c082-2 5 digit led display head mounted display 50LH50

    12c5a

    Abstract: NE55xx GSM900 MCH185A180JK NE5520379A NE5520379A-T1A-A 16651 IC 7109 LDMOS NEC
    Text: NEC'S 3.2 V, 3 W, L/S BAND NE5520379A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35.5 dBm TYP (Bottom View) Gate 1.2 MAX. Drain 1.0 MAX. 4.4 MAX.


    Original     		PDF NE5520379A 9Z001 GSM900/DCS 12c5a NE55xx GSM900 MCH185A180JK NE5520379A NE5520379A-T1A-A 16651 IC 7109 LDMOS NEC

    2052-5636-02 100pf

    Abstract: GSM900 MCH185A180JK NE5520379A NE5520379A-T1A NEC LDMOS
    Text: NEC'S 3.2 V, 3 W, L/S BAND NE5520379A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35.5 dBm TYP 1.0 MAX. 4.4 MAX. Drain 0.8±0.15 9Z001 • CLASS AB OPERATION


    Original     		PDF NE5520379A 9Z001 NE5520379A HS350-P3 2052-5636-02 100pf GSM900 MCH185A180JK NE5520379A-T1A NEC LDMOS

    NEC 718

    Abstract: LDMOS NEC
    Text: PRELIMINARY DATA SHEET 3W, L/S-BAND MEDIUM POWER NE5520379A SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35 dBm TYP 1.5 – 0.2 4.2 Max Source • HIGH LINEAR GAIN: 15 dB TYP @ 900 MHz


    Original     		PDF NE5520379A 24-Hour NEC 718 LDMOS NEC

    1653350001

    Abstract: Lb 598 d ask 1 ld 35x75
    Text: Screw Clamp 32/35 mm DIN-Rail Terminals Circuit Protection Single Level Fuse ASK 1 ASK 1 LD ASK 1 LD with blown fuse indicator and circuit disconnect Warning: • Install AP partition after last ASK 1 or KDKS 1. • Disconnect power before replacing the fuse.


    OCR Scan     		PDF

    ae rp

    Abstract: minimeter
    Text: r 1 I 2 J L JL J - F R O N T S H IE LD G R O U N D IN G T A B L A T C H IN G M E C H A N IS M F R O N T S H IE LD -R E A R S H IE LD FIL TE R IN S E R T IL O P TIO N A L G R O U N D T A B LO CA TIO N FOR 1 P O R T O N LY GRND. T A B LO CATION FOR 2 THRU 12 PO RTS


    OCR Scan     		PDF V50574 V51276 V60981 V61300 V61440 ae rp minimeter

    Untitled

    Abstract: No abstract text available
    Text: Catalog 82074 Guide to RF Connectors Revised 5-98 BNC Connectors, 50 Ohm Plugs, Crimp BNC Connectors Connector Cable Range Selection Codet Continued (Continued) RG/U Cable B e ld e n Center Term ination Contact Type Plating Body Plating Dielectric ctvlp


    OCR Scan     		PDF

    N82S147BA

    Abstract: N82S147b
    Text: Philips Components-Signetics 82S147B Document No. 8 5 3 -0 0 7 4 ECN No. 91543 Date of Issue N ove m b e r 20, 1987 Status Pro du ct S pecification 4K-bit TTL bipolar PROM M em ory Products PIN CONFIGURATIONS DESCRIPTION FEATURES The 82S 14 7 B is fie ld program m able,


    OCR Scan     		PDF 82S147B 750ft, N82S147BA N82S147b

    R282 800 000

    Abstract: daniels 282 235 011 R282 271 daniels daniels 282 235 013
    Text: N TOOLING Joule effect soldering device Compliant with European standards n° 89/336/CEE and 73/23/CEE electromagnetic compatibility and low voltage It allows to s o ld e r: - center contacts and bodies to sem i-rigid cables, - center contacts to flexible cables


    OCR Scan     		PDF 89/336/CEE 73/23/CEE 89/336/CEE 89/392/CEE 73/23/CEE. Y1168 R282 800 000 daniels 282 235 011 R282 271 daniels daniels 282 235 013

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA Oct. 1997 TPM 1919-40-311 1. R F PERFORM ANCE SPEC IFIC A TIO N S CHARACTERISTICS SYMBOL CONDITION Output Power at ld B Compression Point PldB Power Gain at ldB Compression Point GldB Drain Current Power Added Efficiency V ds= 10V f = 1.9 GHz I ds


    OCR Scan     		PDF 170mA -500//A TPM1919-40-31D