SMU10P
Abstract: SMD SMU10P05 smu10p05 SMD10P05 smd10p SMU10
Text: Tem ic SMD/SMU10P05 Siliconix P-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V ) r DS(on) (Π) lD a (A) -5 0 0.28 -1 0 s T O -2 5 1 Q T O -252 O O o G D it It Drain Connected to Tab S Top View Order Number: G SMD10P05 D S P-Channel M OSFET
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OCR Scan
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SMD/SMU10P05
SMD10P05
SMU10P05
P-36851--Rev.
P-36851--
SMU10P
SMD SMU10P05
smu10p05
SMD10P05
smd10p
SMU10
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PDF
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6 pin TRANSISTOR SMD CODE PA
Abstract: BUZ22 smd code buz smd rgs BUZ22 SMD BUZ22SMD Diode smd code sm PH smd transistor PH smd transistor A7J TRANSISTOR SMD XD
Text: Infineon technologies BUZ 22 SMD SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 D BUZ 22 SMD </ Type 100 V 34 A ^D S on) Package Ordering Code 0.055 Í2 d 2p a k Q67042-S4139 Maximum Ratings Parameter Symbol
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OCR Scan
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BUZ22SMD
q67042-s4139
DsJ14
6 pin TRANSISTOR SMD CODE PA
BUZ22
smd code buz
smd rgs
BUZ22 SMD
BUZ22SMD
Diode smd code sm
PH smd transistor PH
smd transistor A7J
TRANSISTOR SMD XD
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PDF
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cdfp4-f16
Abstract: smd transistor Q5 SMD Transistors nc smd transistor 304
Text: HS-6254RH S E M I C O N D U C T O R Radiation Hardened Ultra High Frequency NPN Transistor Array March 1998 Features Description • QML Qualified Per MIL-PRF-38535 Requirements The HS-6254RH is a Radiation Hardened array of five NPN transistors on a common substrate. One of our bonded wafer,
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HS-6254RH
HS-6254RH
05A/cm2
cdfp4-f16
smd transistor Q5
SMD Transistors nc
smd transistor 304
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PDF
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transistor smd MJ 145
Abstract: d 132 smd code diode d 132 smd diode qd SMD SMD TRANSISTOR qd BUZ31 smd rgs smd diode 145
Text: Infineon technologies BUZ 31 SMD SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated tab Pin 1 Pin 2 Pin 3 D Type Vds ¡D ^DS(on) Package Ordering Code BUZ 31 SMD 200 V 14.5 A 0.2 Q D:PAK Q67042-S4131 Maximum Ratings Parameter
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OCR Scan
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q67042-s4131
np-60
transistor smd MJ 145
d 132 smd code diode
d 132 smd diode
qd SMD
SMD TRANSISTOR qd
BUZ31
smd rgs
smd diode 145
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PDF
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cdfp4-f16
Abstract: E4 SMD TRANSISTOR CDFP4-F16 reference ISL73096RHVX 5962F0721801V9A AN1503 ISL73096RH ISL73127RH ISL73128RH NPN PNP Transistor Arrays
Text: ISL73096RH, ISL73127RH, ISL73128RH The ISL73096RH, ISL73127RH and ISL73128RH are radiation hardened bipolar transistor arrays. The ISL73096RH consists of three NPN transistors and two PNP transistors on a common substrate. The ISL73127RH consists of five NPN transistors on a
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ISL73096RH,
ISL73127RH,
ISL73128RH
ISL73127RH
ISL73128RH
ISL73096RH
ISL73096,
cdfp4-f16
E4 SMD TRANSISTOR
CDFP4-F16 reference
ISL73096RHVX
5962F0721801V9A
AN1503
NPN PNP Transistor Arrays
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PDF
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cdfp4-f16
Abstract: smd transistor FY smd transistor ka HS6254
Text: HS-6254RH HARRIS S E M I C O N D U C T O R PRELIMINARY Radiation Hardened Ultra High Frequency NPN Transistor Array October 1997 Features Description • QML Qualified Per MIL-PRF-38535 Requirements . • Radiation Environment - Gamma Dose y . 3 x 1 0 RAD(Si)
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OCR Scan
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HS-6254RH
HS-6254RH
cdfp4-f16
smd transistor FY
smd transistor ka
HS6254
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PDF
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cdfp4-f16
Abstract: smd transistor 304
Text: HS-6254RH HARRIS S E M I C O N D U C T O R Radiation Hardened Ultra High Frequency NPN Transistor Array March 1998 Features Description • QML Qualified Per MIL-PRF-38535 Requirements The HS-6254RH is a Radiation Hardened array of five NPN transistors on a common substrate. One of our bonded wafer,
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OCR Scan
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HS-6254RH
MIL-PRF-38535
HS-6254RH
1320nm
1340nm
05A/cm2
cdfp4-f16
smd transistor 304
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PDF
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smd transistor 304
Abstract: cdfp4-f16
Text: HS-6254RH Semiconductor Radiation Hardened Ultra High Frequency NPN Transistor Array March 1998 Features Description • QML Qualified Per MIL-PRF-38535 Requirements The HS-6254RH is a Radiation Hardened array of five NPN transistors on a common substrate. One of our bonded wafer,
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OCR Scan
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HS-6254RH
MIL-PRF-38535
HS-6254RH
1320nm
1340nm
05A/cm2
smd transistor 304
cdfp4-f16
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PDF
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SMU25N05-45L
Abstract: SMD25N05-45L smu25n05 SMD25N05 SMD25N0545L
Text: Tem ic SMD/SMU25N05-45L Siliconix N-Channel Enhancement-Mode Transistors, Logic Level 175 °C Maximum Junction Temperature Product Summary VDS V 50 rDS(on) (Q) 0.045 Id 3 (A) 25 TO-251 TO -252 D Q o It o o— ^ Drain Connected to Tab G D S Top View Order Number:
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OCR Scan
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SMD/SMU25N05-45L
O-251
SMD25N05-45L
SMU25N05-45L
100CC
P-37394--Rev.
SMU25N05-45L
smu25n05
SMD25N05
SMD25N0545L
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PDF
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Untitled
Abstract: No abstract text available
Text: ,•— SPP 70N10L Infineon t«c hnoIogi Preliminary Data SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current f ì DS onì 0.016 n
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OCR Scan
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70N10L
SPP70N10L
SPB70N10L
P-T0220-3-1
Q67040-S4175
P-T0263-3-2
Q67040-S4170
S35bQ5
Q133777
SQT-89
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PDF
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5962F0721805VXC
Abstract: No abstract text available
Text: Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays ISL73096RH, ISL73127RH, ISL73128RH, ISL73096EH, ISL73127EH, ISL73128EH The ISL73096, ISL73127 and ISL73128 are radiation Features hardened bipolar transistor arrays. The ISL73096 consists of
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ISL73096RH,
ISL73127RH,
ISL73128RH,
ISL73096EH,
ISL73127EH,
ISL73128EH
ISL73096,
ISL73127
ISL73128
ISL73096
5962F0721805VXC
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PDF
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IRF3205 smd
Abstract: No abstract text available
Text: MOSFET IC Transistors MOSFET IC SMD Type DIP SMDType Type DIP Type Product specification IRF3205 3.30 ±0.10 TO-220 2.54 ±0.20 ø3.18 ±0.10 0.70 15.80 ±0.20 ● Advanced Process Technology ● Ultra Low On-Resistance (1.00x45°) 15.87 ±0.20 6.68 ±0.20
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IRF3205
O-220
00x45Â
54TYP
IRF3205 smd
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PDF
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transistor smd Q 865
Abstract: SMD footprint design smd transistor 647 046 sot428 PHD3055E PHB3055E PHP3055E SC18 T0220AB T404
Text: Preliminary specification Philips Semiconductors TrenchMOS transistor SYMBOL FEATURES • • • • • PHP3055E, PHB3055E, PHD3055E QUICK REFERENCE DATA d ’Trench’ technology Very low on-state resistance Fast switching High thermal cycling performance
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OCR Scan
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PHP3055E,
PHB3055E,
PHD3055E
PHP3055E
T0220AB)
PHB3055E
OT404
transistor smd Q 865
SMD footprint design
smd transistor 647
046 sot428
PHD3055E
SC18
T0220AB
T404
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PDF
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11n06
Abstract: 11n06LT transistor smd YR 11N06L smd transistor 5c SMD footprint design smd transistor 5c l 5c smd transistor
Text: Philips Semiconductors Preliminary specification PHP11N06LT, PHB11N06LT, PHD11N06LT TrenchMOS transistor Logic level FET FEATURES SYMBOL QUICK REFERENCE DATA Vdss —55 V • ’Trench’ technology • Very low on-state resistance • Fast switching • High thermal cycling performance
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OCR Scan
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PHP11N06LT,
PHB11N06LT,
PHD11N06LT
PHP11N06LT
T0220AB)
11n06
11n06LT
transistor smd YR
11N06L
smd transistor 5c
SMD footprint design
smd transistor 5c l
5c smd transistor
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PDF
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CDFP4-F16
Abstract: ISL73096RHVF "top mark" intersil 5962F0721801V9A ISL73096RH ISL73127RH ISL73128RH NPN PNP Transistor Arrays PNP Transistor Arrays Intersil s1 smd transistor
Text: ISL73096RH, ISL73127RH, ISL73128RH Data Sheet March 23, 2009 Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays FN6475.2 Features • Electrically Screened to SMD # 5962-07218 The ISL73096RH, ISL73127RH and ISL73128RH are radiation hardened bipolar transistor arrays. The
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ISL73096RH,
ISL73127RH,
ISL73128RH
FN6475
ISL73127RH
ISL73128RH
ISL73096RH
ISL73127RH
CDFP4-F16
ISL73096RHVF
"top mark" intersil
5962F0721801V9A
NPN PNP Transistor Arrays
PNP Transistor Arrays Intersil
s1 smd transistor
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PDF
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type HEXFET Power MOSFET KRF1302S 1 .2 7 -0+ 0.1.1 TO-263 Features Advanced Process Technology Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Operating Temperature 0.1max +0.1 1.27-0.1 Repetitive Avalanche Allowed up to Tjmax +0.1 0.81-0.1 2.54 2.54
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KRF1302S
O-263
11gate
22drain
33source
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PDF
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ld smd transistor
Abstract: dsa0023459 KRF9610S
Text: Transistors IC SMD Type HEXFET Power MOSFET KRF9610S TO-263 Unit: mm 1 .2 7 -0+ 0.1.1 Features Surface Mount +0.1 1.27-0.1 +0.2 4.57-0.2 Available in Tape & Reel 5 .2 8 -0+ 0.2.2 Simple Drive Requirements 0.1max +0.1 1.27-0.1 Fast Switching +0.1 0.81-0.1 2.54
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KRF9610S
O-263
ld smd transistor
dsa0023459
KRF9610S
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PDF
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smd code book B3 transistor
Abstract: No abstract text available
Text: SPP 80N03 Infineon technologies SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current ^DS on 0.006 £2 A 80 b V 30 • dy/df rated
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OCR Scan
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80N03
SPP80N03
SPB80N03
P-T0220-3-1
Q67040-S4734-A2
P-T0263-3-2
Q67040-S4734-A3
Q133777
SQT-89
B535bQ5
smd code book B3 transistor
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PDF
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100V Single P-Channel HEXFET MOSFET
Abstract: ld smd transistor p channel mosfet 100v 70a to-252 KRFR9210
Text: Transistors IC SMD Type HEXFET Power MOSFET KRFR9210 TO-252 +0.15 6.50-0.15 +0.2 5.30-0.2 Available in Tape & Reel Unit: mm +0.1 2.30-0.1 +0.15 1.50-0.15 Features +0.8 0.50-0.7 Dynamic dv/dt Rating Repetitive Avalanche Rated 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15
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KRFR9210
O-252
100V Single P-Channel HEXFET MOSFET
ld smd transistor
p channel mosfet 100v 70a to-252
KRFR9210
|
PDF
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ld smd transistor
Abstract: KRFR9310
Text: Transistors IC SMD Type HEXFET Power MOSFET KRFR9310 TO-252 Features Unit: mm +0.1 2.30-0.1 +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 +0.8 0.50-0.7 P-Channel 0.127 max 2.3 Fully Avalanche Rated +0.28 1.50-0.1 Avanced Process Technology +0.1 0.60-0.1 +0.15
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KRFR9310
O-252
ld smd transistor
KRFR9310
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PDF
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type HEXFET Power MOSFET KRFR6215 TO-252 Features Unit: mm +0.1 2.30-0.1 +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 +0.8 0.50-0.7 +0.1 0.80-0.1 0.127 max P-Channel 2.3 +0.28 1.50-0.1 Fast Switching +0.1 0.60-0.1 +0.15 4.60-0.15 Fully Avalanche Rated
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KRFR6215
O-252
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PDF
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ld smd transistor
Abstract: 78 DIODE SMD KRF2805S 104A smd diode JC 68
Text: Transistors IC SMD Type HEXFET Power MOSFET KRF2805S TO-263 Features Unit: mm 1 .2 7 -0+ 0.1.1 Advanced Process Technology Ultra Low On-Resistance +0.1 1.27-0.1 +0.2 4.57-0.2 Dynamic dv/dt Rating 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2 Repetitive Avalanche Allowed up to Tjmax
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Original
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KRF2805S
O-263
11gate
22drain
33source
ld smd transistor
78 DIODE SMD
KRF2805S
104A
smd diode JC 68
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PDF
|
Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type HEXFET Power MOSFET KRF9640S TO-263 Unit: mm 1 .2 7 -0+ 0.1.1 Features Surface Mount Available in Tape & Reel +0.1 1.27-0.1 +0.2 4.57-0.2 5 .2 8 -0+ 0.2.2 Fast Switching Ease of Paralleling 0.1max +0.1 1.27-0.1 +0.1 0.81-0.1 2.54 2.54
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Original
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KRF9640S
O-263
|
PDF
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book FOR D 1047
Abstract: No abstract text available
Text: SPP 80N03L SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance f î D S o n • Avalanche rated Continuous drain current b 30 V 0 .0 0 6 Q 80 A • Logic Level • dv/df rated
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OCR Scan
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80N03L
SPP80N03L
SPB80N03L
P-T0220-3-1
Q67040-S4735-A2
P-T0263-3-2
Q67040-S4735-A3
S35bQ5
Q133777
SQT-89
book FOR D 1047
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PDF
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