AN1228
Abstract: "RF MOSFETs" AN1226
Text: AN1228 APPLICATION NOTE RELATE LDMOS DEVICE PARAMETERS TO RF PERFORMANCE John Pritiskutch - Brett Hanson 1. ABSTRACT This second installment of a two-part paper series on LDMOS technology see Understanding LDMOS Device Fundamentals, AN1226 will explain LDMOS circuit-level performance through MOS intrinsic
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AN1228
AN1226)
AN1228
"RF MOSFETs"
AN1226
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LDMOS
Abstract: AN1226 AN1228
Text: AN1228 APPLICATION NOTE RELATE LDMOS DEVICE PARAMETERS TO RF PERFORMANCE John Pritiskutch - Brett Hanson 1. ABSTRACT This second installment of a two-part paper series on LDMOS technology see Understanding LDMOS Device Fundamentals, AN1226 will explain LDMOS circuit-level performance through MOS intrinsic
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AN1228
AN1226)
LDMOS
AN1226
AN1228
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800w rf power amplifier circuit diagram
Abstract: MRF6VP11KH 1000w power amplifier circuit diagram 200W PUSH-PULL 1000w power AMPLIFIER pcb circuit amplifier circuit diagram class D 1000w 500w FM power amplifier circuit diagram MRFE6VP6300H RF Amplifier 500w 175 mhz 1000w class d circuit diagram schematics
Text: White Paper 50V RF LDMOS An ideal RF Power technology for ISM, broadcast and commercial aerospace applications Freescale Semiconductor www.freescale.com/rfpower I. INTRODUCTION RF LDMOS RF Laterally Diffused MOS , hereafter referred to as LDMOS, is the dominant device technology used in
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1990s.
2010are
50VRFLDMOSWP
800w rf power amplifier circuit diagram
MRF6VP11KH
1000w power amplifier circuit diagram
200W PUSH-PULL
1000w power AMPLIFIER pcb circuit
amplifier circuit diagram class D 1000w
500w FM power amplifier circuit diagram
MRFE6VP6300H
RF Amplifier 500w 175 mhz
1000w class d circuit diagram schematics
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SD57045
Abstract: AN1224
Text: AN1224 Application note Evaluation board using SD57045 LDMOS RF transistor for FM broadcast application Introduction LDMOS technology allows the manufacturing of high efficiency and high gain amplifiers for FM transmitters. LDMOS has proven advantages against bipolar devices in terms of higher
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AN1224
SD57045
SD57045,
AN1224
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"RF MOSFETs"
Abstract: AN1226 AN1228
Text: AN1228 Application note How to relate LMOS device parameters to RF performance Introduction This second installment of a two-part paper series on LDMOS technology see Understanding LDMOS Device Fundamentals, AN1226 will explain LDMOS circuit-level performance through MOS intrinsic device characteristics. Understanding current laterally
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AN1228
AN1226)
"RF MOSFETs"
AN1226
AN1228
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SD57045
Abstract: CAPACITOR 33PF AN1224 40w resistor hf amplifier for transformer
Text: AN1224 APPLICATION NOTE LDMOS RF POWER TRANSISTORS FOR FM BROADBOARD APPLICATION Ahmed Mimouni 1. ABSTRACT LDMOS technology allows the manufacturing of high efficiency and high gain amplifiers for FM transmitters. LDMOS has proven advantages against bipolar devices in terms of higher gain, efficiency,
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AN1224
SD57045,
SD57045
CAPACITOR 33PF
AN1224
40w resistor
hf amplifier for transformer
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CAPACITOR 33PF
Abstract: SD57045 AN1224 hf amplifier for transformer 40w resistor 1000 watt ferrite transformer ELECTROLYTIC capacitor, .10uF 50V 30mils
Text: AN1224 APPLICATION NOTE LDMOS RF POWER TRANSISTORS FOR FM BROADBOARD APPLICATION Ahmed Mimouni 1. ABSTRACT LDMOS technology allows the manufacturing of high efficiency and high gain amplifiers for FM transmitters. LDMOS has proven advantages against bipolar devices in terms of higher gain, efficiency,
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AN1224
SD57045,
CAPACITOR 33PF
SD57045
AN1224
hf amplifier for transformer
40w resistor
1000 watt ferrite transformer
ELECTROLYTIC capacitor, .10uF 50V
30mils
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Untitled
Abstract: No abstract text available
Text: R_10032 CA-330-11; LDMOS bias module Rev. 1.0 — 24 July 2012 Report Document information Info Content Keywords LDMOS, bias Abstract This report describes a bias module for LDMOS RF power transistors. It provides a low-noise bias supply, temperature compensation, and a very
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CA-330-11;
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Untitled
Abstract: No abstract text available
Text: NXP UHF/DVB-T power LDMOS transistor BLF888A S The most powerful LDMOS broadcast transistor delivering 125 W output power Designed for broadband operation (470 and 860 MHz), this LDMOS transistor boasts one-octave wideband operation, extremely good ruggedness, very high output power, high efficiency, high
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BLF888A
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Untitled
Abstract: No abstract text available
Text: NXP LDMOS RF power transistor BLF578 LDMOS RF power transistor delivering 1000 W of CW output power Delivering 1000 W of CW output power with 26 dB of gain and 75% efficiency, this rugged LDMOS device is ideally suited for use in broadcast transmitters and industrial, scientific and
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BLF578
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UPG2214TK
Abstract: UPG2179TB UPG2301TQ LDMOS NEC amplifer UPD5702TU CC156
Text: Class 1 Power Amplifiers for Bluetooth NEW! UPG2214TK or UPG2179TB GaAs Switch IC I NEC Class One Silicon LDMOS or GaAs HBT Power Amplifier RFIC Baseband Q VCC NEW! Low Cost Silicon LDMOS UPD5702TU MMIC Power Amplifier • Output Power = 21dBm • Two Stage Device
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UPG2214TK
UPG2179TB
UPD5702TU
21dBm
155mA
UPG2301TQ
23dBm
120mA
23dBm
UPG2301TQ
LDMOS NEC
amplifer
UPD5702TU
CC156
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ne554
Abstract: NE55410GR NE55410GR-T3-AZ TL12 TL13 TL15
Text: LDMOS FIELD EFFECT TRANSISTOR NE55410GR N-CHANNEL SILICON POWER LDMOS FET FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER DESCRIPTION The NE55410GR is an N-channel enhancement-mode LDMOS FET designed for driver 0.1 to 2.6 GHz PA, such as, cellular base station amplifier, analog/digital TV-transmitters, and the other PA’s. This product has two different
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NE55410GR
NE55410GR
ne554
NE55410GR-T3-AZ
TL12
TL13
TL15
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dvb-t transmitters
Abstract: 80w audio amplifier with tone control BLF878 LDU661C amplifier 400W RF Amplifier 500w M2.5 torque settings 100w audio amplifier 2 x 20w amplifier 400w amplifier
Text: LDU661C 600W pep –27dBc min LDMOS Technology Designed for analog and digital TV transposers and transmitters, this amplifier incorporates micro-strip technology and push-pull LDMOS to enhance ruggedness and reliability. Patented bias control and matching circuit.
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LDU661C
27dBc
100KHz
BLF878
dvb-t transmitters
80w audio amplifier with tone control
LDU661C
amplifier 400W
RF Amplifier 500w
M2.5 torque settings
100w audio amplifier
2 x 20w amplifier
400w amplifier
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ldmos nec
Abstract: No abstract text available
Text: DATA SHEET LDMOS FIELD EFFECT TRANSISTOR NE55410GR N-CHANNEL SILICON POWER LDMOS FET FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER DESCRIPTION The NE55410GR is an N-channel enhancement-mode LDMOS FET designed for driver 0.1 to 2.6 GHz PA, such as, cellular base station amplifier, analog/digital TV-transmitters, and the other PA’s. This product has two different
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NE55410GR
NE55410GR
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ldmos nec
Abstract: No abstract text available
Text: DATA SHEET LDMOS FIELD EFFECT TRANSISTOR NE55410GR N-CHANNEL SILICON POWER LDMOS FET FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER DESCRIPTION The NE55410GR is an N-channel enhancement-mode LDMOS FET designed for driver 0.1 to 2.6 GHz PA, such as, cellular base station amplifier, analog/digital TV-transmitters, and the other PA’s. This product has two different
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NE55410GR
NE55410GR
ldmos nec
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BLF6G22LS-100
Abstract: RF35
Text: BLF6G22LS-100 Power LDMOS transistor Rev. 3 — 12 November 2010 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance
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BLF6G22LS-100
BLF6G22LS-100
RF35
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RO4350 properties
Abstract: RO4350 BLF7G15L-200 800B 15085
Text: BLF7G15LS-200 Power LDMOS transistor Rev. 1 — 13 September 2010 Preliminary data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance
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BLF7G15LS-200
RO4350 properties
RO4350
BLF7G15L-200
800B
15085
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8140115
Abstract: 8140 SOURIAU BLF7G20LS-250P Souriau 23N-50 8140 800B RF35 BLF7G
Text: BLF7G20L-250P; BLF7G20LS-250P Power LDMOS transistor Rev. 2 — 9 September 2010 Preliminary data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz. Table 1.
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BLF7G20L-250P;
BLF7G20LS-250P
BLF7G20L-250P
7G20LS-250P
8140115
8140 SOURIAU
BLF7G20LS-250P
Souriau
23N-50
8140
800B
RF35
BLF7G
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Untitled
Abstract: No abstract text available
Text: BLF8G27LS-100V Power LDMOS transistor Rev. 1 — 17 August 2012 Objective data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2500 MHz to 2700 MHz.
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BLF8G27LS-100V
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Untitled
Abstract: No abstract text available
Text: BLF8G22LS-140 Power LDMOS transistor Rev. 1 — 25 September 2012 Objective data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance
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Bv 42 transistor
Abstract: No abstract text available
Text: BLF8G20LS-200V Power LDMOS transistor Rev. 2 — 12 October 2012 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz.
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BLF8G20LS-200V
Bv 42 transistor
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Untitled
Abstract: No abstract text available
Text: BLF8G27LS-100P Power LDMOS transistor Rev. 1 — 3 December 2012 Objective data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance
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13N50
Abstract: 8140115 nxp marking code M2
Text: BLF6G15L-250PBRN Power LDMOS transistor Rev. 1 — 14 September 2010 Preliminary data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance
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BLF6G15L-250PBRN
13N50
8140115
nxp marking code M2
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Untitled
Abstract: No abstract text available
Text: BLF8G20LS-200V Power LDMOS transistor Rev. 4 — 21 October 2013 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz.
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BLF8G20LS-200V
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