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    JRH Electronics M55302-62LE70H

    MIL-DTL-55302 Series Connector
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    JRH Electronics M55302-62LE70M

    MIL-DTL-55302 Series Connector
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    JRH Electronics M55302-62LE70S

    MIL-DTL-55302 Series Connector
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    SANOXY SANOXY-CABLE70

    SANOXY Electornic Cables
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    DigiKey SANOXY-CABLE70 1
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    JRH Electronics M55302-62LE70L

    MIL-DTL-55302 Series Connector
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    LE70 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    APPLE A6 CHIP

    Abstract: cf325 W07 sot 23 C-492-5 SMD M05 sot23 C4977 cf406 p66 apple c5297 I342
    Text: 8 6 7 PDF CSA CONTENTS IMG5 17" REV E 11/01/05 SYNC MASTER DATE PDF CSA CONTENTS TABLE_TABLEOFCONTENTS_HEAD 2 System Block Diagram FINO-DD 06/20/2005 TABLE_TABLEOFCONTENTS_ITEM 3 4 Power Block Diagram FINO-PC 06/20/2005 5 Table Items FINO-M23 08/26/2005 6


    Original
    PDF RF420 CF414 1/16W RF424 APPLE A6 CHIP cf325 W07 sot 23 C-492-5 SMD M05 sot23 C4977 cf406 p66 apple c5297 I342

    SAB9076H

    Abstract: QFP100 philips capacitor part numbering system 16Main MHRPN01
    Text: Philips Semiconductors Picture-in-Picture Controller SAB9076 Application Note AN 96027 APPLICATION NOTE APPLICATION INFORMATION FOR PICTURE IN PICTURE CONTROLLER SAB9076 AN96027 Author s : G. Bauhuis Design & Application Department, Consumer ICs Nijmegen,


    Original
    PDF SAB9076 AN96027 SAB9076H TDA8315 LE-70 TDA8310 SAB9076H QFP100 philips capacitor part numbering system 16Main MHRPN01

    UPD4216402

    Abstract: No abstract text available
    Text: NEC pPD4216402, 4217402 4,194,304 X 4-Bit Dynamic CMOS RAM NEC Electronics Inc. Advance Information Description The /JPD4216402 and the /JPD4217402 are staticcolumn dynamic RAMs organized as 4,194,304 words by 4 bits and designed to operate from a single +5-volt


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    PDF uPD4216402 /JPD4217402

    3we22

    Abstract: 8001P
    Text: blE ]> n e • bllE7SES 0033^02 Tflfl HNECE jjPD421x 800/L, 42S1x800/L w NEC Electronics Inc. NEC ELECTRONICS INC Description The devices listed below are fa s t-p a g e dynam ic RAMs o rganized as 2M words by 8 bits a n d designed to o p e ra te from a single pow er supply. O ptional features


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    PDF uPD421x800/L uPD42S1x800/L 42S16800 42S17800 8001Power 42S1X800/L jjPD421 800/L, b427S25 DG34DD4 3we22 8001P

    K1537

    Abstract: No abstract text available
    Text: NEC NEC Electronics Inc. Description The ¿/PD424263A/L and /iPD42S4263A/L are fast-page dynam ic RAMs w ith the w rite-per-bit option, organized as 262,144 words by 16 bits, and designed to o p e ra te from a single pow er supply. Optional features are power supply voltage + 5 V or


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    PDF uPD424263A/L uPD42S4263A/L 16-Bit /PD424263A/L /iPD42S4263A/L 24263A 424263L 42S4263A 42S4263L jPD424263A/L, K1537

    AO16A

    Abstract: nec v70 A819
    Text: NEC JUPD4216410, 4217410 4,194,304 x 4-Bit Dynamic CMOS RAM NEC Electronics Inc. Advance Information Description The /j PD4216410 and the pPD4217410 are fast-page dynamic RAMs with write per-bit organized as 4,194,304 words by 4 bits and designed to operate from a single


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    PDF uPD4216410 uPD4217410 28/24-pin 24-pin PD4216410 pPD4217410 nPD4217410 PD4217410LE-60 AO16A nec v70 A819

    Untitled

    Abstract: No abstract text available
    Text: SEC pPD4216100, 4217100 16,777,216 X 1-Bit Dynamic CMOS RAM NEC Electronics Inc. Description The juPD4216100 and the /iPD4217100 are fast-page dynamic RAMs organized as 16,777,216 words by 1 bit and designed to operate from a single +5-volt power supply. Advanced polycide technology minimizes sili­


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    PDF pPD4216100, juPD4216100 /iPD4217100 JHPD4216100, S3IH-68158

    Untitled

    Abstract: No abstract text available
    Text: 1^ 1 W NEC Electronics Inc. pPD424260A/L, 42S4260A/L 262,144 X 16-Bit Dynamic CMOS RAM Preliminary Information Description The /L/PD424260A/L and /JPD42S4260A/L are fast-page dynamic RAMs organized as 262,144 words by 16 bits and designed to operate from a single power supply:


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    PDF pPD424260A/L, 42S4260A/L 16-Bit /L/PD424260A/L /JPD42S4260A/L 24260A 424260L 42S4260A 42S4260L

    D4217400

    Abstract: nec 4217400
    Text: JJPD4216400, 4217400 4,194,304 X 4-Bit Dynamic CMOS RAM M J jW NEC Electronics Inc. Description The ¿/PD4216400 and the /JPD4217400 are fast-page dynamic RAMs organized as 4,194,304 words by 4 bits and designed to operate from a single +5-volt power supply. Advanced polycide technology minimizes sili­


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    PDF JJPD4216400, /PD4216400 /JPD4217400 28/24-pin MjE30( 6D-15 fiPD4216400, pPD4216400, D4217400 nec 4217400

    Untitled

    Abstract: No abstract text available
    Text: fjPD421x160/L, 42S1x160/L x = 6, 7, 8 1,048,576 x 16-Bit Dynamic CMOS RAM ¿ Y fiW NEC Electronics Inc. Description T he devices listed below are fast-page dynam ic RAMs organized as 1M words by 16 bits and designed to o p e ra te from a single power supply. O ptional features


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    PDF fjPD421x160/L, 42S1x160/L 16-Bit 4218/42S18, 4217/42S17, l/09-l/01e fiPD421X160/L, 83RO-74748 St-37

    Untitled

    Abstract: No abstract text available
    Text: NEC 3CT 2 e 1992 NEC Electronics Inc. fiPD424190A/L, 42S4190A/L 262,144 X 18-Bit Dynamic CMOS RAM Preliminary Information Description The ¿¿PD424190A/L and /JPD42S4190A/L are fast-page dynam ic RAMs organized as 262,144 words by 18 bits and designed to o perate from a single pow er supply.


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    PDF fiPD424190A/L, 42S4190A/L 18-Bit PD424190A/L /JPD42S4190A/L 24190A 424190L 42S4190A 42S4190L

    Untitled

    Abstract: No abstract text available
    Text: blE D bM2752S 0034G34 I TflM « N E C E NEC Electronics Inc. N E C E L E C T R O N I C S INC Description T he devices listed below are fast-page dynam ic RAMs organized as 1M words by 16 bits and designed to o p e ra te from a single pow er supply. O ptional features


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    PDF bM2752S 0034G34 42S16160 42S17160 42S18160 4217/42S17, WD-747W jjPD421 160/L, 160/L

    nec 424800

    Abstract: No abstract text available
    Text: bMB?S25 00410^0 EC 2^7 A TA S H E ET 3 MOS INTEGRATED CIRCUIT /¿PD424800-L 4M B IT D Y N A M IC RAM F A S T PA G E M ODE D ESCRIPTIO N The N E C juPD4 2 48 00 -L is a 524288-word by 8 bits dynam ic CMOS RAM w ith optional fast page mode. CMOS sense am plifier, peripheral circuits and 1 transistor memory cell technique realize high speed access, cycle time


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    PDF PD424800-L 524288-word /uPD424800-L 28-pin PD424800V nec 424800

    Untitled

    Abstract: No abstract text available
    Text: NEC pPD424900A/L, 42S4900A/L 524,288 X 9-Bit Dynamic CMOS RAM NEC Electronics Inc. Description The ¿/PD424900A/L and /UPD42S4900A/L are fast-page dynam ic RAMs organized as 524,288 words by 9 bits a nd designed to o p e ra te from a single power supply. O ptional features are pow er supply voltage + 5 V or


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    PDF uPD424900A/L 42S4900A/L /PD424900A/L /UPD42S4900A/L 24900A 424900L 42S4900A 42S4900L 28-pin /UPD424900A/L,

    SA9C

    Abstract: No abstract text available
    Text: SEC fiPD4216100, 4217100 16,777,216 X 1-Bit Dynamic CMOS RAM NEC Electronics Inc. Description T he juPD4216100 and the /JPD4217100 are fast-page dynam ic RAMs organized as 16,777,216 words by 1 bit and designed to o p e ra te from a single +5-volt power supply. A dvanced polycide technology m inim izes sili­


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    PDF uPD4216100 uPD4217100 SA9C

    SL680C

    Abstract: No abstract text available
    Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ _ _ _ _ _ _ _ _ _ /¡u P D 42S 16800,4216800,42317800,421780C 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE Description The /iPD42S16800, 4216800, 42S17800, 4217800 are 2,097,152 words by 8 bits CMOS dynamic RAMs. The


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    PDF 421780C uPD42S16800 uPD4216800 uPD42S17800 uPD4217800 PD42S16800, 42S17800 28-pin R35-207-2 SL680C

    D4242

    Abstract: 3V07
    Text: NEC NEC Electronics Inc. Description The /L/PD424263A/L and /iPD42S4263A/L are fast-page dynam ic RAMs w ith the w rite-per-bit option, organized as 262,144 words by 16 bits, and designed to o p e ra te from a single pow er supply. Optional features are pow er supply voltage + 5 V or


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    PDF uPD424263A/L uPD42S4263A/L 24263A 424263L 42S4263A 42S4263L 24263A/L, 42S4263A/L 16-Bit D424263A/L, D4242 3V07

    DA736

    Abstract: 24pin 2k 64 da73 D-A73
    Text: N E C ELECTRONICS INC jm jm i M LIE D NEC Electronics Inc. • bM2752S 0033*153 1Û7 « N E C E PPD4216102, 4217102 16,777,216 X 1-Bit Dynamic CMOS RAM Advance Information Description The/¿PD4216102 and the ¿/PD4217102 are static-column dynamic RAMs organized as 16,777,216 words by 1 bit


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    PDF uPD4216102 uPD4217102 nPD4217102 PD4217102LE-60 LE-70 LE-80 LE-10 juPD4217102V-60 JUPD4217102G5-60 G5-70 DA736 24pin 2k 64 da73 D-A73

    4623A

    Abstract: K311 LE-60 GD34063
    Text: blE » • b427525 0D34G75 flìfl «NECE jiPD421x180/L, 42S1x180/L x = 6, 7, 8 NEC Electronics Inc. 1,048,576 x 18-Bit Dynamic CMOS RAM _N E C ELECTRONICS INC 7~~ '¿U-l# W M li W Description The devices listed below are fast-page dynamic RAMs


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    PDF uPD421x180/L uPD42S1x180/L 18-Bit 42S16180 42S17180 42S18180 For75BS 0D3410fl pPD421x180/L, 42S1x180/L 4623A K311 LE-60 GD34063

    nec 4217400

    Abstract: nec 4216400 4216400
    Text: N E C ELECTRONICS INC blE D NEC NEC Electronics Inc. • h4275S5 RRb H N E C E JJPD4216400, 4217400 4,194,304 X 4-Bit Dynamic CMOS RAM ~ h Description T he ¿/PD4216400 and the //PD 4217400 are fast-page d ynam ic RAMs organized as 4,194,304 words by 4 bits


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    PDF uPD4216400 uPD4217400 /PD4216400 pPD4216400, JJPD4216400, nec 4217400 nec 4216400 4216400

    zl6 zener

    Abstract: Max 17113 SE528 TRANSISTOR E507 e507 LE50 equivalent transistor LE37 1008 W zener zl5 LE44 LE67
    Text: MI L-M-38510/134 6 MILITARY MAY 1985 SPECIFICATION M I C R O C I RC U I TS , L I N E A R , ANALOG-TO-DIGITAL CONVERTERS WITH 3-STATE BUFFERED 10 B I T OUTPUTS, MONOLITHIC S I L I C O N This s p e c i f i c a t io n is ments and Agencies 1. a p p r o v e d f o r use by a l l D e p a r t ­


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    PDF MIL-M-38510/134 MIL-M-38510. MIL-M-38510 L-M-38510/134 zl6 zener Max 17113 SE528 TRANSISTOR E507 e507 LE50 equivalent transistor LE37 1008 W zener zl5 LE44 LE67

    Untitled

    Abstract: No abstract text available
    Text: m e NEC Electronics Inc. Description The /JPD424900A/L and /iPD42S4900A/L are fast-page dynamic RAMs organized as 524,288 words by 9 bits and designed to operate from a single power supply. Optional features are power supply voltage +5 V or +3.3 V and a new refresh mode called “ self-refresh.”


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    PDF /JPD424900A/L /iPD42S4900A/L 24900A 424900L 42S4900A 42S4900L JJPD424900A/L, 42S4900A/L pPD424900A/L,

    Untitled

    Abstract: No abstract text available
    Text: SEC J1PD424280A/L, 42S4280A/L 262,144 X 18-Bit Dynamic CMOS RAM NEC Electronics Inc. Description The ^PD424280A/L and ¿/PD42S4280A/L are fast-page dynamic RAMs organized as 262,144 words by 18 bits and designed to operate from a single power supply. Optional features are power supply voltage +5 V or


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    PDF J1PD424280A/L, 42S4280A/L 18-Bit PD424280A/L /PD42S4280A/L 24280A 424280L 42S4280A 42S4280L iro10-

    Untitled

    Abstract: No abstract text available
    Text: ffPD421x900/L, 42S1X900/L x = 6, 7 2,097,152 X 9-Bit Dynamic CMOS RAM NEC NEC Electronics Inc. Description The devices listed below are fast-page dynamic RAMs organized as 2M words by 9 bits and designed to operate from a single power supply. Optional features


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    PDF ffPD421x900/L, 42S1X900/L 42S16900 42S17900 jjPD421x 900/L 8T-22 pPD421x900/L,