Untitled
Abstract: No abstract text available
Text: AUTOMOTIVE CURRENT TRANSDUCER HAB 100-S/SP1 Principle of HAB xxx-S Family Introduction The HAB Family is best suited for DC, AC or pulsed currents measurement in high power and low voltage automotive applications. It’s contains galvanic isolation between the primary
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100-S/SP1
HAB100-S/SP1
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100-NP
Abstract: lem ha 2000 NP-40 battery lem module circuit TOP 242 PN lem module ha Transducer TBD lem module 100A lem 50 LEM Components
Text: Current Transducer LAX SERIES Ref LAX 100-NP IPN = 50-100 A Provisional Datasheet Electrical Data Specifications Symbol 50 At Unit Min Typ 100 At Max Min Conditions Typ Max 1 IPN At Primary current, measuring range IP At -150 +150 -160 Measuring resistance
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100-NP
100-NP
lem ha 2000
NP-40 battery
lem module
circuit TOP 242 PN
lem module ha
Transducer TBD
lem module 100A
lem 50
LEM Components
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Untitled
Abstract: No abstract text available
Text: Current Transducer HAIS 50.400-P and HAIS 50.100-TP IPN = 50 . 400 A For the electronic measurement of currents: DC, AC, pulsed., with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). All data are given with a RL = 10 kW
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400-P
100-TP
50-TP
100-P,
100-TP
150-P
200-P
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LTSP
Abstract: 25-NP ltsp 25-np UPS schematics lem module 100A marking LEM
Text: Current Transducer LTSP IPN = 25 A Ref: LTSP 25-NP For the electronic measurement of currents: DC, AC, pulsed . , with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Features Applications • Closed loop (compensated) multi-range current transducer
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25-NP
94-V0
LTSP
25-NP
ltsp 25-np
UPS schematics
lem module 100A
marking LEM
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LEM Hais 100-P
Abstract: LEM Hais 50-P HAIS 100-P LEM ups over smps advantages lem 400-P 100-P code lem lem module 100A
Text: Current Transducer HAIS 50.400-P Current Transducer HAIS 50.400-P and and HAIS 50.100-TP HAIS 50.100-TP = 50 . 400 A IIPN PN = 50 . 400 A For the For electronic measurement of ofcurrents: DC,AC, AC,pulsed, pulsed., the electronic measurement currents : DC,
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400-P
100-TP
LEM Hais 100-P
LEM Hais 50-P
HAIS 100-P LEM
ups over smps advantages
lem 400-P
100-P
code lem
lem module 100A
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LTSP 25-NP
Abstract: No abstract text available
Text: Current Transducer LTSP IPN = 25 A Ref: LTSP 25-NP For the electronic measurement of currents: DC, AC, pulsed . , with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Features Applications • Closed loop (compensated) multi-range current transducer
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25-NP
94-V0
LTSP 25-NP
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Lem MODULE 1000A
Abstract: FA050P 100A-4V IPM DC LEM Components FA-050 FA-050PV FA-100PV DC Power Supplies circuit lem module 50
Text: Current Transducer FA-050.100PV IPN DC = 50 . 100 A For the electronic measurement of currents: DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Electrical data Primary continuous
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FA-050.
100PV
FA-050PV
FA-100PV
00A-4V
FA-050PV
FA-100PV
2000Auipment
Lem MODULE 1000A
FA050P
100A-4V
IPM DC
LEM Components
FA-050
DC Power Supplies circuit
lem module 50
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lem module 100A
Abstract: IPM DC 1000-S 2000-S
Text: Current Transducers HTC 1000.3000-S IPN DC= ± 1000.3000 A For the electronic measurement of currents: AC,DC, pulsed, mixed, with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). VOUT = ± 10 V
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3000-S
1000-S
2000-S
lem module 100A
IPM DC
1000-S
2000-S
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LEM Hais 50-P
Abstract: HAIS 200-P lem module 100A LEM Hais 100-P 100-P HAIS 50-P
Text: Current Transducer HAIS 50.400-P and HAIS 50.100-TP IPN = 50 . 400 A For the electronic measurement of currents : DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). All Data are given with a R L = 10 kΩ
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400-P
100-TP
50-TP1)
100-P,
100-TP1)
150-P
200-P
LEM Hais 50-P
HAIS 200-P
lem module 100A
LEM Hais 100-P
100-P
HAIS 50-P
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Untitled
Abstract: No abstract text available
Text: Current Transducer HAIS 50.400-P and HAIS 50.100-TP IPN = 50 . 400 A For the electronic measurement of currents: DC, AC, pulsed., with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). All data are given with a RL = 10 kW
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400-P
100-TP
50-TP
100-P,
100-TP
150-P
200-P
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LEM Hais 50-P
Abstract: HAIS 50-P LEM Hais 100-P lem 50 p 7 pin SMPS HAIS 200-P High Voltage Busbar High Voltage Bus-bars LEM Components power supply
Text: Current Transducer HAIS 50.400-P and HAIS 50.100-TP IPN = 50 . 400 A For the electronic measurement of currents : DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). All Data are given with a R L = 10 kΩ
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400-P
100-TP
50-TP1)
100-P,
100-TP1)
150-P
200-P
LEM Hais 50-P
HAIS 50-P
LEM Hais 100-P
lem 50 p
7 pin SMPS
HAIS 200-P
High Voltage Busbar
High Voltage Bus-bars
LEM Components
power supply
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LEM 3225
Abstract: LEM Taiyo Yuden JISC0051
Text: 信号系巻線チップインダクタ WOUND CHIP INDUCTORS FOR SIGNAL LINE LB SERIES M TYPE OPERATING TEMP. K25VJ105C(製品自己発熱含む) fIncluding self-generated heatg 特長 FEATURES YLBM2016(新製品) 下面電極構造を採用により高Q化および狭公差化を実現しました。信号
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K25VJ105C
YLBM2016
LEM 3225
LEM Taiyo Yuden
JISC0051
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100AH
Abstract: No abstract text available
Text: 巻線チップインダクタ WOUND CHIP INDUCTORS LB SERIES OPERATING TEMP. K25VJ105C(製品自己発熱含む) fIncluding self-generated heatg 特長 FEATURES 豊富なラインアップ形状と標準低Rdc、大電流シリーズでお客様の広範囲
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K25VJ105C
YLB3218fg3225
YLBMF1608fg
YLB3218
YLBMF1608
100AH
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Untitled
Abstract: No abstract text available
Text: 巻線チップパワーインダクタ WOUND CHIP POWER INDUCTORS CB SERIES OPERATING TEMP. K25VJ105C(製品自己発熱含む) fIncluding self-generated heatg 特長 FEATURES YLB / LBC シリーズに対し大電流化に対応しています。小型のDC/DCコン
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K25VJ105C
YCBMF1608
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lem lt 100 p
Abstract: lem current lt 100 lem module HEME 1000 lem heme current 1000 lem current LTA
Text: LEM CURRENT TRANSDUCERS Module LTA 100-PR Instantaneous and True RMS Outputs Definition - Principle The LEM type LTA 100-PR is a transducer employing the Hall effect to measure DC and complex waveform AC currents in a non invasive manner. Galvanic isolation is provided
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100-PR
100-PR
100PR
lem lt 100 p
lem current lt 100
lem module
HEME 1000
lem heme current 1000
lem current LTA
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lem lta 100p
Abstract: HEME International lta100p/sp4 LTA100P/SP1 lem current HEME 1000 lem module 100A noryl grade LTA100/SP1 lta100
Text: HEMEL I, InternationalÊÊÊ LEM CURRENT TRANSDUCERS Module LTA 100P/SP1 lo7- Instantaneous Outputs . Definition - Principle T he L EM type LTAIOOP/SPI is a transducer em ploying the Hall Effect to m easure D C and com plex w aveform A C currents in a non invasive m a n n e r Galvanic isolation is provided betw een the primary (m easured) and the analogue
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LTA100P/SP1
LTA100/SP1
V0-150
lem lta 100p
HEME International
lta100p/sp4
LTA100P/SP1
lem current
HEME 1000
lem module 100A
noryl grade
lta100
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maa 502
Abstract: FF 75 R 1200 kl igbt 100A/IGBT 2MBI100N-120 igbt power module FF 50 R 1200 KL
Text: FUJI 2-Pack IGBT 1200 V 100 A 2 M B I 1 0 0 N -1 2 0 S ü S tä M K IGBT MODULE N series n Outline Drawing n Features • S q ua re R BSO A •L o w S a tu ra tion Voltage •L e s s Total P o w er D issipation •Im p ro v e d FW D C haracteristic •M in im iz e d In te rn al S tra y Inductance
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2MBI100N-120
L-14-J
125-C
D-60528
maa 502
FF 75 R 1200 kl igbt
100A/IGBT
2MBI100N-120
igbt power module FF 50 R 1200 KL
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E78996 rectifier module
Abstract: powerdiod
Text: a • international SR ectifier MÔ5545E GDlbS? 7*13 « I N R international rectifier ^se» s e rie s B40HFL/H2L FAST RECOVERY DIODES Power Modules in B-package Features ■ ■ ■ ■ 40A Fast recovery time characteristics Electrically isolated base plate
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S54S2
001bS77
E78996
B40HFL.
/B40H2S.
B40HFL/B40H2L
B40HFL/B40H2L.
125-C
E78996 rectifier module
powerdiod
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E78996 rectifier module
Abstract: X 0238 CE D105 D106 ZD 1E3 diode 40 S02 g1e2
Text: International Eran]Rectifier • MÔS5M52 ÜOlbSñM ^23 ■ INR INTERNATIONAL RECTIFIER bSE D SERIES B40DL/CL/JL FAST RECOVERY DIODE / DIODE Power Modules in B-package Features F a s t r e c o v e r y tim e c h a r a c te r is tic s E le c tr ic a lly is o la te d b a s e p la te
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4fl55H52
E78996
B40DL.
chargerB40DL/B40CL/JL
B40DL/CL/JL
E78996 rectifier module
X 0238 CE
D105
D106
ZD 1E3
diode 40 S02
g1e2
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Untitled
Abstract: No abstract text available
Text: Bulletin 127107 rev. A 09/97 International Iö R Rectifier T.HFL SERIES T-Modules FAST RECOVERY DIODES Features • 40 A 70 A 85 A Fast recovery tim e characteristics ■ Electrically isolated base plate ■ 3 5 0 0 VRMS isolating voltage ■ Standard J E D E C package
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003G030
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J 3305
Abstract: 7MBR100SB060 100SB-060 CD11E
Text: This m aterial and iho Information herein is ih« proper ty of F up Elecwc Co,U d.They shillbe neither reproduced. c op ie d lem. or dfeclo&ed in any way w hatsoever lor the use of any third p a rtyn o r used for the manufacturing p urp o se s without the e ip re ss w ni ten consent of Fuji Electric Co_ Ltd.
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7MBR100SB060
H04-004-07
Jan-12-
MS6M0417
dgg57bb
J 3305
7MBR100SB060
100SB-060
CD11E
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E.78996
Abstract: 78996 L220A 4525 GE DIODE RK 69 ir e.78996 D183 D184 D185 D186
Text: • International [¡^Rectifier 4Ô5S45B OOlbbSa 712 ■ INR s e r ie s irk.l56, .L71, .l9i FAST RECOVERY DIODES ADD-A-pak Power Modules INTERNATIONAL RECTIFIER bSE » Features ■ ■ ■ ■ ■ ■ ■ ■ Fast recovery tim e characteristics Electrically isolated base plate
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NEC J302 transistor
Abstract: TRANSISTOR J601 nec j303 CMOS J601 380V 415v motor FLA Transistor J601 53 414 LEM DIODE step transformer 415V 50HZ 15V J103 NEC J302, replacement
Text: ALLEN-BRADLEY Bulletin 1335 Variable Torque AC Drive 12 through 96 Amp Instruction Manual Important User Information Because of the variety of uses for this equipment and because of the differences between this solid state equipment and electromechanical
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mepco capacitor
Abstract: 6 volts SMPS Power supply surge lightning to smps
Text: HARDENING POWER SUPPLIES TO LINE VOLTAGE TRANSIENTS Originally presented at the Power Electronics Design Conference, October, 1985, Anaheim, California Also published in Power Conversion & intelligent Motion, June, 1986 Abstract The pow er line transi&nt environment is described. Transient voltages on the D C output of off-line rectifier/fitter designs are shown. Protection schemes
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