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    LEM MODULE 100A Search Results

    LEM MODULE 100A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4162F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4206F Toshiba Electronic Devices & Storage Corporation Intelligent power device 500V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    MG250YD2YMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 2200 V, 250 A, 2-153A1A Visit Toshiba Electronic Devices & Storage Corporation

    LEM MODULE 100A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: AUTOMOTIVE CURRENT TRANSDUCER HAB 100-S/SP1 Principle of HAB xxx-S Family Introduction The HAB Family is best suited for DC, AC or pulsed currents measurement in high power and low voltage automotive applications. It’s contains galvanic isolation between the primary


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    PDF 100-S/SP1 HAB100-S/SP1

    100-NP

    Abstract: lem ha 2000 NP-40 battery lem module circuit TOP 242 PN lem module ha Transducer TBD lem module 100A lem 50 LEM Components
    Text: Current Transducer LAX SERIES Ref LAX 100-NP IPN = 50-100 A Provisional Datasheet Electrical Data Specifications Symbol 50 At Unit Min Typ 100 At Max Min Conditions Typ Max 1 IPN At Primary current, measuring range IP At -150 +150 -160 Measuring resistance


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    PDF 100-NP 100-NP lem ha 2000 NP-40 battery lem module circuit TOP 242 PN lem module ha Transducer TBD lem module 100A lem 50 LEM Components

    Untitled

    Abstract: No abstract text available
    Text: Current Transducer HAIS 50.400-P and HAIS 50.100-TP IPN = 50 . 400 A For the electronic measurement of currents: DC, AC, pulsed., with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). All data are given with a RL = 10 kW


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    PDF 400-P 100-TP 50-TP 100-P, 100-TP 150-P 200-P

    LTSP

    Abstract: 25-NP ltsp 25-np UPS schematics lem module 100A marking LEM
    Text: Current Transducer LTSP IPN = 25 A Ref: LTSP 25-NP For the electronic measurement of currents: DC, AC, pulsed . , with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Features Applications • Closed loop (compensated) multi-range current transducer


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    PDF 25-NP 94-V0 LTSP 25-NP ltsp 25-np UPS schematics lem module 100A marking LEM

    LEM Hais 100-P

    Abstract: LEM Hais 50-P HAIS 100-P LEM ups over smps advantages lem 400-P 100-P code lem lem module 100A
    Text: Current Transducer HAIS 50.400-P Current Transducer HAIS 50.400-P and and HAIS 50.100-TP HAIS 50.100-TP = 50 . 400 A IIPN PN = 50 . 400 A For the For electronic measurement of ofcurrents: DC,AC, AC,pulsed, pulsed., the electronic measurement currents : DC,


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    PDF 400-P 100-TP LEM Hais 100-P LEM Hais 50-P HAIS 100-P LEM ups over smps advantages lem 400-P 100-P code lem lem module 100A

    LTSP 25-NP

    Abstract: No abstract text available
    Text: Current Transducer LTSP IPN = 25 A Ref: LTSP 25-NP For the electronic measurement of currents: DC, AC, pulsed . , with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Features Applications • Closed loop (compensated) multi-range current transducer


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    PDF 25-NP 94-V0 LTSP 25-NP

    Lem MODULE 1000A

    Abstract: FA050P 100A-4V IPM DC LEM Components FA-050 FA-050PV FA-100PV DC Power Supplies circuit lem module 50
    Text: Current Transducer FA-050.100PV IPN DC = 50 . 100 A For the electronic measurement of currents: DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Electrical data Primary continuous


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    PDF FA-050. 100PV FA-050PV FA-100PV 00A-4V FA-050PV FA-100PV 2000Auipment Lem MODULE 1000A FA050P 100A-4V IPM DC LEM Components FA-050 DC Power Supplies circuit lem module 50

    lem module 100A

    Abstract: IPM DC 1000-S 2000-S
    Text: Current Transducers HTC 1000.3000-S IPN DC= ± 1000.3000 A For the electronic measurement of currents: AC,DC, pulsed, mixed, with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). VOUT = ± 10 V


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    PDF 3000-S 1000-S 2000-S lem module 100A IPM DC 1000-S 2000-S

    LEM Hais 50-P

    Abstract: HAIS 200-P lem module 100A LEM Hais 100-P 100-P HAIS 50-P
    Text: Current Transducer HAIS 50.400-P and HAIS 50.100-TP IPN = 50 . 400 A For the electronic measurement of currents : DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). All Data are given with a R L = 10 kΩ


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    PDF 400-P 100-TP 50-TP1) 100-P, 100-TP1) 150-P 200-P LEM Hais 50-P HAIS 200-P lem module 100A LEM Hais 100-P 100-P HAIS 50-P

    Untitled

    Abstract: No abstract text available
    Text: Current Transducer HAIS 50.400-P and HAIS 50.100-TP IPN = 50 . 400 A For the electronic measurement of currents: DC, AC, pulsed., with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). All data are given with a RL = 10 kW


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    PDF 400-P 100-TP 50-TP 100-P, 100-TP 150-P 200-P

    LEM Hais 50-P

    Abstract: HAIS 50-P LEM Hais 100-P lem 50 p 7 pin SMPS HAIS 200-P High Voltage Busbar High Voltage Bus-bars LEM Components power supply
    Text: Current Transducer HAIS 50.400-P and HAIS 50.100-TP IPN = 50 . 400 A For the electronic measurement of currents : DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). All Data are given with a R L = 10 kΩ


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    PDF 400-P 100-TP 50-TP1) 100-P, 100-TP1) 150-P 200-P LEM Hais 50-P HAIS 50-P LEM Hais 100-P lem 50 p 7 pin SMPS HAIS 200-P High Voltage Busbar High Voltage Bus-bars LEM Components power supply

    LEM 3225

    Abstract: LEM Taiyo Yuden JISC0051
    Text: 信号系巻線チップインダクタ WOUND CHIP INDUCTORS FOR SIGNAL LINE LB SERIES M TYPE OPERATING TEMP. K25VJ105C(製品自己発熱含む) fIncluding self-generated heatg 特長 FEATURES YLBM2016(新製品) 下面電極構造を採用により高Q化および狭公差化を実現しました。信号


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    PDF K25VJ105C YLBM2016 LEM 3225 LEM Taiyo Yuden JISC0051

    100AH

    Abstract: No abstract text available
    Text: 巻線チップインダクタ WOUND CHIP INDUCTORS LB SERIES OPERATING TEMP. K25VJ105C(製品自己発熱含む) fIncluding self-generated heatg 特長 FEATURES 豊富なラインアップ形状と標準低Rdc、大電流シリーズでお客様の広範囲


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    PDF K25VJ105C YLB3218fg3225 YLBMF1608fg YLB3218 YLBMF1608 100AH

    Untitled

    Abstract: No abstract text available
    Text: 巻線チップパワーインダクタ WOUND CHIP POWER INDUCTORS CB SERIES OPERATING TEMP. K25VJ105C(製品自己発熱含む) fIncluding self-generated heatg 特長 FEATURES YLB / LBC シリーズに対し大電流化に対応しています。小型のDC/DCコン


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    PDF K25VJ105C YCBMF1608

    lem lt 100 p

    Abstract: lem current lt 100 lem module HEME 1000 lem heme current 1000 lem current LTA
    Text: LEM CURRENT TRANSDUCERS Module LTA 100-PR Instantaneous and True RMS Outputs Definition - Principle The LEM type LTA 100-PR is a transducer employing the Hall effect to measure DC and complex waveform AC currents in a non invasive manner. Galvanic isolation is provided


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    PDF 100-PR 100-PR 100PR lem lt 100 p lem current lt 100 lem module HEME 1000 lem heme current 1000 lem current LTA

    lem lta 100p

    Abstract: HEME International lta100p/sp4 LTA100P/SP1 lem current HEME 1000 lem module 100A noryl grade LTA100/SP1 lta100
    Text: HEMEL I, InternationalÊÊÊ LEM CURRENT TRANSDUCERS Module LTA 100P/SP1 lo7- Instantaneous Outputs . Definition - Principle T he L EM type LTAIOOP/SPI is a transducer em ploying the Hall Effect to m easure D C and com plex w aveform A C currents in a non invasive m a n n e r Galvanic isolation is provided betw een the primary (m easured) and the analogue


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    PDF LTA100P/SP1 LTA100/SP1 V0-150 lem lta 100p HEME International lta100p/sp4 LTA100P/SP1 lem current HEME 1000 lem module 100A noryl grade lta100

    maa 502

    Abstract: FF 75 R 1200 kl igbt 100A/IGBT 2MBI100N-120 igbt power module FF 50 R 1200 KL
    Text: FUJI 2-Pack IGBT 1200 V 100 A 2 M B I 1 0 0 N -1 2 0 S ü S tä M K IGBT MODULE N series n Outline Drawing n Features • S q ua re R BSO A •L o w S a tu ra tion Voltage •L e s s Total P o w er D issipation •Im p ro v e d FW D C haracteristic •M in im iz e d In te rn al S tra y Inductance


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    PDF 2MBI100N-120 L-14-J 125-C D-60528 maa 502 FF 75 R 1200 kl igbt 100A/IGBT 2MBI100N-120 igbt power module FF 50 R 1200 KL

    E78996 rectifier module

    Abstract: powerdiod
    Text: a • international SR ectifier MÔ5545E GDlbS? 7*13 « I N R international rectifier ^se» s e rie s B40HFL/H2L FAST RECOVERY DIODES Power Modules in B-package Features ■ ■ ■ ■ 40A Fast recovery time characteristics Electrically isolated base plate


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    PDF S54S2 001bS77 E78996 B40HFL. /B40H2S. B40HFL/B40H2L B40HFL/B40H2L. 125-C E78996 rectifier module powerdiod

    E78996 rectifier module

    Abstract: X 0238 CE D105 D106 ZD 1E3 diode 40 S02 g1e2
    Text: International Eran]Rectifier • MÔS5M52 ÜOlbSñM ^23 ■ INR INTERNATIONAL RECTIFIER bSE D SERIES B40DL/CL/JL FAST RECOVERY DIODE / DIODE Power Modules in B-package Features F a s t r e c o v e r y tim e c h a r a c te r is tic s E le c tr ic a lly is o la te d b a s e p la te


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    PDF 4fl55H52 E78996 B40DL. chargerB40DL/B40CL/JL B40DL/CL/JL E78996 rectifier module X 0238 CE D105 D106 ZD 1E3 diode 40 S02 g1e2

    Untitled

    Abstract: No abstract text available
    Text: Bulletin 127107 rev. A 09/97 International Iö R Rectifier T.HFL SERIES T-Modules FAST RECOVERY DIODES Features • 40 A 70 A 85 A Fast recovery tim e characteristics ■ Electrically isolated base plate ■ 3 5 0 0 VRMS isolating voltage ■ Standard J E D E C package


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    PDF 003G030

    J 3305

    Abstract: 7MBR100SB060 100SB-060 CD11E
    Text: This m aterial and iho Information herein is ih« proper ty of F up Elecwc Co,U d.They shillbe neither reproduced. c op ie d lem. or dfeclo&ed in any way w hatsoever lor the use of any third p a rtyn o r used for the manufacturing p urp o se s without the e ip re ss w ni ten consent of Fuji Electric Co_ Ltd.


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    PDF 7MBR100SB060 H04-004-07 Jan-12- MS6M0417 dgg57bb J 3305 7MBR100SB060 100SB-060 CD11E

    E.78996

    Abstract: 78996 L220A 4525 GE DIODE RK 69 ir e.78996 D183 D184 D185 D186
    Text: • International [¡^Rectifier 4Ô5S45B OOlbbSa 712 ■ INR s e r ie s irk.l56, .L71, .l9i FAST RECOVERY DIODES ADD-A-pak Power Modules INTERNATIONAL RECTIFIER bSE » Features ■ ■ ■ ■ ■ ■ ■ ■ Fast recovery tim e characteristics Electrically isolated base plate


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    NEC J302 transistor

    Abstract: TRANSISTOR J601 nec j303 CMOS J601 380V 415v motor FLA Transistor J601 53 414 LEM DIODE step transformer 415V 50HZ 15V J103 NEC J302, replacement
    Text: ALLEN-BRADLEY Bulletin 1335 Variable Torque AC Drive 12 through 96 Amp Instruction Manual Important User Information Because of the variety of uses for this equipment and because of the differences between this solid state equipment and electromechanical


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    mepco capacitor

    Abstract: 6 volts SMPS Power supply surge lightning to smps
    Text: HARDENING POWER SUPPLIES TO LINE VOLTAGE TRANSIENTS Originally presented at the Power Electronics Design Conference, October, 1985, Anaheim, California Also published in Power Conversion & intelligent Motion, June, 1986 Abstract The pow er line transi&nt environment is described. Transient voltages on the D C output of off-line rectifier/fitter designs are shown. Protection schemes


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