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    LET20030S Datasheets (1)

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    LET20030S STMicroelectronics RF Power Transistor Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: LET20030S RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA Designed for GSM / EDGE / IS-97 applications • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 30 W with 11 dB gain @ 2000 MHz • ESD PROTECTION


    Original     		LET20030S IS-97 LET20030S PDF

    AN1294

    Abstract: LET20030S
    Text: LET20030S RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA Designed for GSM / EDGE / IS-97 applications • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 30 W with 11 dB gain @ 2000 MHz • ESD PROTECTION


    Original     		LET20030S IS-97 LET20030S AN1294 PDF