MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
|
Original
|
PAMP13-N1
MIP2F3
MIP2F4
MIP382
MIP2E7DMY
mip2f2
mip291
MIP414S
MIP2E5DMY
mip411
MIP3E3SMY equivalent
|
PDF
|
lN5534
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LN55 GaAs Infrared Light Emitting Diode For optical control systems • Features M Di ain sc te on na tin nc ue e/ d High-power output, high-efficiency: PO = 3.5 mW (typ.)
|
Original
|
2002/95/EC)
LETLSN2S0002
SHC00012CED
lN5534
|
PDF
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LN75X GaAIAs Infrared Light Emitting Diode For optical control systems • Features M Di ain sc te on na tin nc ue e/ d High-power output, high-efficiency: PO = 10 mW (typ.)
|
Original
|
2002/95/EC)
LN75X
|
PDF
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LN65 GaAs Infrared Light Emitting Diode For optical control systems • Features M Di ain sc te on na tin nc ue e/ d High-power output, high-efficiency: PO = 5.5 mW (typ.)
|
Original
|
2002/95/EC)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LN75X GaAIAs Infrared Light Emitting Diode For optical control systems • Features High-power output, high-efficiency: PO = 10 mW (typ.) High-speed modulation capability: fC = 12 MHz
|
Original
|
2002/95/EC)
LN75X
|
PDF
|
LN65
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LN65 GaAs Infrared Light Emitting Diode For optical control systems • Features High-power output, high-efficiency: PO = 5.5 mW (typ.) Good radiant power output linearity with respect to input current
|
Original
|
2002/95/EC)
LN65
|
PDF
|
mip411
Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
|
Original
|
PAMP13-N1
mip411
MIP2F4
MIP2F3
AN12947a
mip2f2
MIP2F20MS
MIP2F40MS
mip2e7dmy
panasonic inverter dv 700 manual
mip291
|
PDF
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LN55 GaAs Infrared Light Emitting Diode For remote control systems • Features High-power output, high-efficiency: PO = 3.5 mW (typ.) Suited for use with silicon photodetectors
|
Original
|
2002/95/EC)
|
PDF
|
PO 102
Abstract: LN55 po102
Text: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LN55 GaAs Infrared Light Emitting Diode For optical control systems • Features High-power output, high-efficiency: PO = 3.5 mW (typ.) Suited for use with silicon photodetectors
|
Original
|
2002/95/EC)
SHC00012CED
LETLSN2S0002
PO 102
LN55
po102
|
PDF
|