Untitled
Abstract: No abstract text available
Text: LF PA K 56 PHPT61003PY 100 V, 3A PNP high power bipolar transistor 13 January 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61003NY
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PHPT61003PY
OT669
LFPAK56)
PHPT61003NY
AEC-Q101
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sot669 footprint
Abstract: No abstract text available
Text: LF PA K 56 PHPT60603NY 60V, 3 A NPN high power bipolar transistor 10 January 2014 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60603PY
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PHPT60603NY
OT669
LFPAK56)
PHPT60603PY
AECQ-101
sot669 footprint
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Untitled
Abstract: No abstract text available
Text: LF PA K 56 PHPT61002NYC 100V, 2 A NPN high power bipolar transistor 9 January 2014 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61002PYC
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PHPT61002NYC
OT669
LFPAK56)
PHPT61002PYC
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PHPT60603NY
Abstract: No abstract text available
Text: LF PA K 56 PHPT60603NY 60V, 3 A NPN high power bipolar transistor 13 December 2013 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60603PY
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PHPT60603NY
OT669
LFPAK56)
PHPT60603PY
AECQ-101
PHPT60603NY
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Untitled
Abstract: No abstract text available
Text: LF PA K 56 PHPT61002PYC 100 V, 2 A PNP high power bipolar transistor 10 January 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61002NYC.
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PHPT61002PYC
OT669
LFPAK56)
PHPT61002NYC.
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Untitled
Abstract: No abstract text available
Text: LF PA K 56 PHPT61003NY 100 V, 3 A NPN high power bipolar transistor 13 January 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61003NY
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Original
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PHPT61003NY
OT669
LFPAK56)
AEC-Q101
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PDF
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sot669 footprint
Abstract: No abstract text available
Text: LF PA K 56 PHPT61003NY 100 V, 3 A NPN high power bipolar transistor 13 December 2013 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61003PY
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Original
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PHPT61003NY
OT669
LFPAK56)
PHPT61003PY
AEC-Q101
sot669 footprint
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PDF
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Untitled
Abstract: No abstract text available
Text: LF PA K 56 PHPT61003NY 100 V, 3 A NPN high power bipolar transistor 3 February 2014 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61003PY
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Original
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PHPT61003NY
OT669
LFPAK56)
PHPT61003PY
AEC-Q101
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PDF
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Untitled
Abstract: No abstract text available
Text: LF PA K 56 PHPT60603PY 60 V, 3 A PNP high power bipolar transistor 13 January 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60603NY.
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PHPT60603PY
OT669
LFPAK56)
PHPT60603NY.
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: A Heatsinks for D PAK and others B C D – copper heatsinks with excellent heat conductivity – direct mounting on printed circuit through solderable surface – especially suitable for SMD components of type D PAK TO 252 , D² PAK (TO 263), D³ PAK (TO 268), SOT 669 LF PAK,
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SO-10,
SO-20,
SO-36,
SO-14,
SO-16,
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FK 244 13 D2 PAK
Abstract: Heatsinks D-PAK TO-268 IC A 244 FK 330 lf 244 so-10 sot 669 aluminium profile
Text: Hola1 H A H Heatsinks for D PAK and others B C – copper heatsinks with excellent heat conductivity – direct mounting on printed circuit through solderable surface – especially suitable for SMD components of type D PAK TO 252 , D² PAK (TO 263), D³ PAK (TO 268), SOT 669 LF PAK,
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SO-10,
SO-20,
SO-36,
SO-14,
SO-16,
FK 244 13 D2 PAK
Heatsinks
D-PAK
TO-268
IC A 244
FK 330
lf 244
so-10
sot 669
aluminium profile
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smd code A4p
Abstract: RESISTOR 1K SMD SMD a1P A3N smd diode transistor smd zc 38 smd transistor A4p smd transistor A6N 3DC1515S-0477X ATA5279 smd diode code A4N
Text: LF Wake-up Demonstrator ATAK5279-82 Using Six-fold Antenna Driver ATA5279 1. General Description The demonstrator is intended to show LF wake-up functionality using the new six-fold LF antenna driver ATA5279 and the 3D receiver ATA5282. The demonstrator may
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ATAK5279-82
ATA5279
ATA5279
ATA5282.
07/08notice.
smd code A4p
RESISTOR 1K SMD
SMD a1P
A3N smd diode
transistor smd zc 38
smd transistor A4p
smd transistor A6N
3DC1515S-0477X
smd diode code A4N
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IP4223CZ6
Abstract: power one pmp 7.24 IP4058CX8/LF ip4065cx11 IP4056CX8/LF 2 x 40w amplifier DIODE BAT86 replacement BAS85 Spice KEC SOT-23 bav99 IP4059CX5/LF
Text: NXP has fully embraced ecological and environmental issues, from maintaining certified environmental management systems General Applications selection guide 2008 to communicating our environmental policy to employees and other stakeholders. Extending this ‘profitable green’ ideal to our
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OD882
OT883
PVR100AD-B12V
PVR100AD-B2V5
PVR100AD-B3V0
PVR100AD-B3V3
PVR100AD-B5V0
PVR100AZ-B12V
PVR100AZ-B2V5
PVR100AZ-B3V0
IP4223CZ6
power one pmp 7.24
IP4058CX8/LF
ip4065cx11
IP4056CX8/LF
2 x 40w amplifier
DIODE BAT86 replacement
BAS85 Spice
KEC SOT-23 bav99
IP4059CX5/LF
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4894B
Abstract: 3DC1515S smd TRANSISTOR 1D 3DC1515S-0477X CSTCE8M00G55A smd transistor zc ATAB5282 3dc1515 ATmega8515 rs232 SMD Capacitor symbols
Text: LF Wake-up Demonstrator ATAK5278-82 1. General Description The LF wake-up demonstrator is provided to demonstrate the performance of an LF wake-up channel, mainly needed for battery-driven systems. Typical wake-up applications can be found in vehicles for passive entry PE and tire pressure monitoring
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ATAK5278-82
ATA5278
ATA5282.
ATA5278
ATA5282,
4894B
3DC1515S
smd TRANSISTOR 1D
3DC1515S-0477X
CSTCE8M00G55A
smd transistor zc
ATAB5282
3dc1515
ATmega8515 rs232
SMD Capacitor symbols
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Untitled
Abstract: No abstract text available
Text: TD13004D • TD13005D wmmt Vishay Telefunken Silicon NPN High Voltage Switching Transistor • Very short switching times Features Very low switching losses • Very low dynamic saturation • Very low operating temperature • High reverse voltage • •
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TD13004D
TD13005D
TD13005D
20-Jan-99
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DSAIH0002562
Abstract: No abstract text available
Text: SMD SOT-23 Plastic Dual Switching Diodes Use Advantages Used in applications where the highest circuit density and current performance are required. For applications as voltage isolators, pulse clippers, transistor biassing and as glue logic. Ideal for use in portable or cellular telephones,
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OT-23
DSAIH0002562
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PDF
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BKC Semiconductors
Abstract: No abstract text available
Text: Dual Switching Diodes SMD SOT-23 Plastic Use Advantages S 13 Used in applications where the highest circuit density and current performance are required. For applications as voltage isolators, pulse clippers, transistor biassing and as glue logic. Ideal for use in portable or cellular telephones,
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OT-23
BKC Semiconductors
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PDF
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BKC Semiconductors
Abstract: LR1 transistor smd transistor LR
Text: SMD SOT-23 Plastic Use Advantages Dual Switching Diodes n a- Used in applications where the highest circuit density and current performance are required. For applications as voltage isolators, pulse clippers, transistor biassing and as glue logic. Ideal for use in portable or cellular telephones,
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OT-23
BKC Semiconductors
LR1 transistor
smd transistor LR
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11733
Abstract: BKC Semiconductors DSAIH0002562 transistor 117-33
Text: SMD SOT-23 Plastic Dual Switching Diodes Use Advantages Used in applications where the highest circuit density and current performance are required. For applications as voltage isolators, pulse clippers, transistor biassing and as glue logic. Ideal for use in portable or cellular telephones,
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OT-23
11733
BKC Semiconductors
DSAIH0002562
transistor 117-33
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s7d smd
Abstract: SMD s7d BKC Semiconductors DSAIH0002561
Text: Switching Diode SMD SOT-23 Plastic Use Advantages Used in applications where the highest circuit density and current performance are required. For applications as voltage isolators, pulse clippers, transistor biassing and as glue logic. Ideal for use in portable or cellular telephones,
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OT-23
s7d smd
SMD s7d
BKC Semiconductors
DSAIH0002561
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PDF
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transistor SMD Lf
Abstract: LF transistor smd SOT-23 lF smd transistor SMD Transistor LF BKC Semiconductors
Text: Switching Diode SMD SOT-23 Plastic Use Advantages T3 S Used in applications where the highest circuit density and current performance are required. For applications as voltage isolators, pulse clippers, transistor biassing and as glue logic. Ideal for use in portable or cellular telephones,
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OT-23
transistor SMD Lf
LF transistor smd SOT-23
lF smd transistor
SMD Transistor LF
BKC Semiconductors
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PDF
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DSAIH00025320
Abstract: No abstract text available
Text: Dual Switching Diodes SMD SOT-23 Plastic Use Advantages "0 ET Used in applications where the highest circuit density and current performance are required. For applications as voltage isolators, pulse clippers, transistor biassing and as glue logic. Ideal for use in portable or cellular telephones,
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OCR Scan
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OT-23
DSAIH00025320
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PDF
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DSAIH0002562
Abstract: No abstract text available
Text: Dual Switching Diodes SMD SOT-23 Plastic Use Advantages Used in applications where the highest circuit density and current performance are required. For applications as voltage isolators, pulse clippers, transistor biassing and as glue logic. Ideal for use in portable or cellular telephones,
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OCR Scan
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OT-23
DSAIH0002562
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PDF
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transistor C2075
Abstract: g10 smd transistor SMD Transistor 1c
Text: âUALITY TEC HN OLO GIES CORP QUALITY TECHNOLOGIES 27E D 74bbasi 0003443 VDE APPROVED TRANSISTOR OUTPUT OPTOCOUPLER H11A1 H11A1Z PACKAGE DIMENSIONS DESCRIPTION The H11A1 is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from
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74bbasi
H11A1
H11A1Z
H11A1
E50151
MCT9001
transistor C2075
g10 smd transistor
SMD Transistor 1c
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