Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    LFBGA88 Search Results

    LFBGA88 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CR10

    Abstract: 4047N
    Text: M30L0T8000T0 M30L0T8000B0 256 Mbit x16, Multiple Bank, Multi-Level, Burst 1.8V core, 3V I/O Flash memory Feature summary • ■ Supply voltage – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 2.2V to 3.6V for I/O Buffers – VPP = 9V for fast program (12V tolerant)


    Original     		PDF M30L0T8000T0 M30L0T8000B0 52MHz LFBGA88 CR10 4047N

    7900f-d

    Abstract: No abstract text available
    Text: M36LLR8860T1, M36LLR8860D1 M36LLR8860M1, M36LLR8860B1 2 x 256 Mbit Multiple Bank, Multi-Level, Burst Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 2 dice of 256 Mbit (16Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory


    Original     		PDF M36LLR8860T1, M36LLR8860D1 M36LLR8860M1, M36LLR8860B1 M36LLR8860T1: 880Dh M36LLR8860D1: 880Eh 7900f-d

    A0-A21

    Abstract: J-STD-020B M30W0R6500T0 LFBGA88 AI08599
    Text: M30W0R6500T0 96 Mbit 64 + 32Mb, x16, Multiple Bank, Burst, Flash Memories 1.8V Supply, Multi-Chip Package FEATURES SUMMARY • ■ ■ ■ ■ MULTI-CHIP PACKAGE – 1 die of 64 Mbit (4Mb x 16) Flash Memory – 1 die of 32 Mbit (2Mb x 16) Flash Memory SUPPLY VOLTAGE


    Original     		PDF M30W0R6500T0 8810h 8814h 54MHz A0-A21 J-STD-020B M30W0R6500T0 LFBGA88 AI08599

    M30LW128D

    Abstract: M58LW064D TSOP56
    Text: M30LW128D 128 Mbit two 64Mbit, x8/x16, Uniform Block, Flash Memories 3V Supply, Multiple Memory Product PRELIMINARY DATA FEATURES SUMMARY • TWO M58LW064D 64Mbit FLASH MEMORIES STACKED IN A SINGLE PACKAGE ■ WIDE x8 or x16 DATA BUS for HIGH BANDWIDTH ■


    Original     		PDF M30LW128D 64Mbit, x8/x16, M58LW064D 64Mbit TSOP56 110ns 110/25ns KWord/128KByte M30LW128D TSOP56

    M30L0R8000T

    Abstract: RAM 2112 256 word J-STD-020B M30L0R8000B0 M30L0R8000T0 M36LLR8860D1
    Text: M36LLR8860T1, M36LLR8860D1 M36LLR8860M1, M36LLR8860B1 2 x 256 Mbit Multiple Bank, Multi-Level, Burst Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 2 dice of 256 Mbit (16Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory


    Original     		PDF M36LLR8860T1, M36LLR8860D1 M36LLR8860M1, M36LLR8860B1 M36LLR8860T1: 880Dh M36LLR8860D1: 880Eh M30L0R8000T RAM 2112 256 word J-STD-020B M30L0R8000B0 M30L0R8000T0 M36LLR8860D1

    china car DVD program ic

    Abstract: VFBGA60 M58LW128A M58LW128B TFBGA80 TSOP56 128-mbit flash STMicroelectronics TRACEABILITY code
    Text: TA260 TECHNICAL ARTICLE An Unprecedented Offer of High Density Flash Memories for Code and Data Storage Anne JOURNEAU MPG Communications STMicroelectronics Rousset, France Mobile communications, Internet and the digital consumer revolution are demanding higher storage capacities for code and data storage. While


    Original     		PDF TA260 china car DVD program ic VFBGA60 M58LW128A M58LW128B TFBGA80 TSOP56 128-mbit flash STMicroelectronics TRACEABILITY code

    CR10

    Abstract: J-STD-020B M30L0R7000B0 M30L0R7000T0
    Text: M30L0R7000T0 M30L0R7000B0 128 Mbit 8Mb x16, Multiple Bank, Multi-Level, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers


    Original     		PDF M30L0R7000T0 M30L0R7000B0 54MHz CR10 J-STD-020B M30L0R7000B0 M30L0R7000T0

    TBGA64

    Abstract: TSOP56 Package Tape J-STD-020B M30LW128D M58LW064D TSOP56
    Text: M30LW128D 128 Mbit two 64Mbit, x8/x16, Uniform Block, Flash Memories 3V Supply, Multiple Memory Product FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ TWO M58LW064D 64Mbit FLASH MEMORIES STACKED IN A SINGLE PACKAGE WIDE x8 or x16 DATA BUS for HIGH


    Original     		PDF M30LW128D 64Mbit, x8/x16, M58LW064D 64Mbit 110ns 110/25ns KWord/128KByte TBGA64 TSOP56 Package Tape J-STD-020B M30LW128D TSOP56

    m29F DATASHEET

    Abstract: M29W320DB M28W640 M29Fxxx TFBGA63 M29DW640DB tsop48 M28W160CB M28W160CT M28W320ECT
    Text: Flash memory solutions STMicroelectronics - May 2003 - Printed in Italy - All rights reserved ORDERCODE: CODE: BRFLASHCON/0503 ORDER for consumer applications For selected STMicroelectronics sales offices fax: France +33 1 55489569; Germany +49 89 4605454; Italy +39 02 8250449; Japan +81 3 57838216; Singapore +65 6481 5124;


    Original     		PDF BRFLASHCON/0503 TBGA80 m29F DATASHEET M29W320DB M28W640 M29Fxxx TFBGA63 M29DW640DB tsop48 M28W160CB M28W160CT M28W320ECT

    M30LW128D

    Abstract: M58LW064D TSOP56 TSOP56 Package Tape 56-Lead TSOP Package
    Text: M30LW128D 128 Mbit two 64Mbit, x8/x16, Uniform Block, Flash Memories 3V Supply, Multiple Memory Product PRELIMINARY DATA FEATURES SUMMARY • TWO M58LW064D 64Mbit FLASH MEMORIES STACKED IN A SINGLE PACKAGE ■ WIDE x8 or x16 DATA BUS for HIGH BANDWIDTH ■


    Original     		PDF M30LW128D 64Mbit, x8/x16, M58LW064D 64Mbit TSOP56 110ns 110/25ns KWord/128KByte M30LW128D TSOP56 TSOP56 Package Tape 56-Lead TSOP Package

    M36LLR8760x1

    Abstract: M36LLR8760T1 M30L0R8000 PSRAM RAM 2112 256 word M36LLR8760B1 M36LLR8760D1 M36LLR8760M1 M69KB096AA
    Text: M36LLR8760T1, M36LLR8760D1 M36LLR8760M1, M36LLR8760B1 256 + 128 Mbit Multiple Bank, Multi-Level, Burst Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package TARGET SPECIFICATION FEATURES SUMMARY • ■ ■ ■ MULTI-CHIP PACKAGE – 1 die of 256 Mbit (16Mb x16, Multiple


    Original     		PDF M36LLR8760T1, M36LLR8760D1 M36LLR8760M1, M36LLR8760B1 M36LLR8760T1: 880Dh 88C4h M36LLR8760D1: 880Eh M36LLR8760x1 M36LLR8760T1 M30L0R8000 PSRAM RAM 2112 256 word M36LLR8760B1 M36LLR8760D1 M36LLR8760M1 M69KB096AA