lg ds 325
Abstract: No abstract text available
Text: A dvanced P o w er Te c h n o l o g y O D APT1001R6BN 1000V 8.0A 1.600 APT901R6BN 900V 8.0A 1.60H O s 3 * WER MOS r N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Sym bol V DSS All Ratings: Tc = 25°C unless otherwise specified.
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APT1001R6BN
APT901R6BN
T1001R
APT1001R6/901R6BN
O-247AD
lg ds 325
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Untitled
Abstract: No abstract text available
Text: RFP15N08L Semiconductor D ata S h eet June 1999 15A, 80V, 0.140 Ohm, Logic Level, N-Channel Power MOSFET • 15A, 80V RFP15N08L • Design Optimized for 5 Volt Gate Drive • Can be Driven Directly from Q-MOS, N-MOS, TTL Circuits • SOA is Power Dissipation Limited
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RFP15N08L
O-220AB
140i2
RFP15N08L
AN7254
AN7260.
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APT1002R4BN
Abstract: No abstract text available
Text: A D V A N CED PO W E R Te c h n o l o g y OD APT1002RBN OS 1000V 7.0A 2.00Í1 APT1002R4BN 1000V 6.5A 2.40Í1 POWER MOS IV® N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS b All Ratings: Tc = 25°C unless otherwise specified.
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APT1002RBN
APT1002R4BN
1002RBN
1002R4BN
APT1002R/1002R4BN
O-247AD
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TH 201
Abstract: APT12080LVR
Text: APT12080LVR A dvanced P o w er Te c h n o l o g y 1200V 16A 0.80012 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™
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APT12080LVR
O-264
APT12080LVR
TH 201
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RFP15N06L
Abstract: No abstract text available
Text: RFP15N05L, RFP15N06L Semiconductor April 1999 Data Sheet 15A, 50V and 60V, 0.140 Ohm, Logic Level N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers,
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RFP15N05L,
RFP15N06L
140i2
AN7254
AN7260.
RFP15N06L
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2n5566
Abstract: 2N5564 2N5565 2sc 5198 equivalent
Text: 2N5564/5565/5566 Vishay Siliconix Matched N-Channel JFET Pairs PRODUCT SUMMARY Part Number V G S o ff (V) V (B R )G S S M i n (V) gfs Min (mS) lG TVp(pA) |VGsi “ V q s 2 ( Max (mV) 2N5564 -0 .5 to - 3 -4 0 7.5 -3 5 2N5565 -0 .5 to - 3 -4 0 7.5 -3 10 2N5566
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2N5564/5565/5566
2N5564
2N5565
2N5566
S-04031--
04-Jun-01
S-04031--Rev.
2sc 5198 equivalent
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Untitled
Abstract: No abstract text available
Text: APT30M19J VR A dvanced W 7Æ P o w e r Te c h n o l o g y 300v 130a 0.0190 POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™
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APT30M19J
OT-227
E145592
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Untitled
Abstract: No abstract text available
Text: A P T 1 0 M 1 1 LVR A dvanced P o w er Te c h n o lo g y ioov 100a 0.01m POWER M OSV Power MOS V is a new generation of high voltage N-Channei enhancement mode power MOSFETs, This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™
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O-264
APT10M1LVR
500yH.
O-264AA
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sml1002rAN
Abstract: 1002RAN sml1002r4an
Text: SEM ELAB _ m bOE D PLC 3133107 G0G0734 i _ TTT • S M L ß MOS POWER SEME SML1002RAN SML902RAN LAB 4 1000V 6.0A 2.0012 900V 6.0A 2.00Q SML1002R4AN 1000V 5.5A 2.40Q SML902R4AN 900V 5.5A 2.40Í2 N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS
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G0G0734
SML1002RAN
SML902RAN
SML1002R4AN
SML902R4AN
902RAN
1002RAN
902R4AN
1002R4AN
100mS
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APT1001R6BN
Abstract: No abstract text available
Text: A d van ced Q D ro w er Te c h n o l o g y O S APT1001R6BN 1000V APT901R6BN 900V 8.0A 1.6012 8.0A 1.6012 POWER MOS IVe N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS !d All Ratings: Tc = 25°C unless otherwise specified.
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APT1001R6BN
APT901R6BN
APT1001R6/901R6
O-247AD
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Untitled
Abstract: No abstract text available
Text: A d v a n ced P o w er Te c h n o l o g y O D wV o k APT5012JNU2 O s ISOTOP® POWER MOS IV< 500V 43A 0.120 Single Die M OSFET and UltraFast Diode For "PFC Boost Circuits" N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS
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APT5012JNU2
5012JNU2
OT-227
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c 503 K
Abstract: lg ds 325
Text: A dvanced P o w er Te c h n o lo g y APT5012JNU3 500V 43A 0.120 ISOTOP* Single Die M O S F E T and UltraFast Diode For "PFC Buck Circuits" POWER MOS IV N-CH A NN EL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS 'd All Ratings: Tc = 25°C unless otherwise specified.
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APT5012JNU3
5012JNU3
OT-227
c 503 K
lg ds 325
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Untitled
Abstract: No abstract text available
Text: A d van ced P o w er Te c h n o l o g y • O D O APT1002RBN APT902RBN APT1002R4BN APT902R4BN s POWER MOS IVe 1000V 900V 1000V 900V 7.0A 7.0A 6.5A 6.5A 2.00Q 2.00Q 2.40Q 2.40Í2 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tr = 25°C unless otherwise specified.
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APT1002RBN
APT902RBN
APT1002R4BN
APT902R4BN
902RBN
1002RBN
902R4BN
1002R4BN
APT1002R/902R/1002R4/902R4BN
O-247AD
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902R4BN
Abstract: APT902RBN APT1002R4BN 1002RBN 1002r4bn APT902R
Text: A D V A N CED PO W ER Tec h n o lo g y O D APT1002RBN APT902RBN APT1002R4BN APT902R4BN Ô s H Tw er m o s n a 1000V 900V 1000V 900V 7.0A 7.0A 6.5A 6.5A 2.00U 2.00U 2.400 2.40U N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: T_ = 25°C unless otherwise specified.
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APT1002RBN
APT902RBN
APT1002R4BN
APT902R4BN
902RBN
1002RBN
902R4BN
1002R4BN
APT1002R/902R/1002R4/902R4BN
1002r4bn
APT902R
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Untitled
Abstract: No abstract text available
Text: 2SJ387 L , 2SJ387(S) Silicon P-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • Low drive current • 2.5 V Gate drive device can be driven from 3 V Source • Suitable for Switching regulator, DC - DC converter
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2SJ387
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f12n10L
Abstract: f12n10
Text: in te fs il RFP12N10L D ata S h e e t J u ly 1999 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET F ile N u m b e r Features • 12A, 100 V These are N-Channel enhancem ent mode silicon gate power field effect transistors specifically designed for use
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RFP12N10L
TA09526.
RFP12N10L
0-56mA
AN7254
AN7260
75BVds
f12n10L
f12n10
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lg ds 325
Abstract: No abstract text available
Text: A dvanced P o w er T e c h n o lo g y APT20M45BVR 200V s6a o.o45ß POWER MOS V Power MOS V isa new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V
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APT20M45BVR
O-247
APT20M45BVR
MIL-STD-750
O-247AD
lg ds 325
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BF982
Abstract: Transistor BF982
Text: BF982 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type fie ld -e ffe ct transistor in a plastic X-package w ith source and substrate interconnected. Intended fo r V H F applications, such as VHF television tuners, FM tuners, w ith 12 V supply voltage. This MOS-FET te tro de is protected against excessive in p u t voltage surge« b y integrated back-to-back
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BF982
lD-20/iA
Tamb-25
BF982
Transistor BF982
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G331
Abstract: pj 86 diode irff120 g-331 G 331 G333
Text: 11Ê D I MÖ55MS2 GGÜIBSH b | Data Sheet No. PD-9.342F INTERNATIONAL RECTIFIER I«R INTERNATIONAL RECTIFIER HEXFETTRANSISTORSIRFF120 IRFF12*! IM-CHANNEL POWER MOSFETs TO-39 PACKAGE IRFF1SS 4 1 IRFF123 Features: 100 Volt, 0.30 Ohm HEXFET T h e H E X F E T ® technology is the key to International
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55MS2
G-334
G331
pj 86 diode
irff120
g-331
G 331
G333
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2N4341
Abstract: No abstract text available
Text: s n-channel JFETs 2N4338 2N4339 2N4340 designed for Siliconix . Performance Curves NP See Section 5 • Small-Signal Amplifiers B E N E F IT S • Low Noise N F < 1 dB at 1 k H z ■ Choppers • Operation from Low Power Supply Voltages ■ Voltage-Controlled Resistors
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2sk1150
Abstract: b 772 my1 PS7K 2SK 1411 t8506
Text: MOS M O S F ield E ffe c t P o w e r T ra n s is to r S 2 7 N x — *y * M O S F E K 1 1 5 T > I t f f l 2SK 1150 Ü , * N f - i$ ;« ^ - 7 - M \z j : b 7 * > m t# < , -i f > F E T f, 5V I C <50tti - 9 , ^ ^ I g g j^ ^ N '- y r ^ .fi : mm / t f t - t .
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2SK1150
50tti
2sk1150
b 772 my1
PS7K
2SK 1411
t8506
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Untitled
Abstract: No abstract text available
Text: ADVANCED P o w er Te c h n o l o g y ' APT30M19JVR 300V 130A 0.019Q POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™
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APT30M19JVR
OT-227
APT30M19JVR
OT-227
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Untitled
Abstract: No abstract text available
Text: IRFW/I540A A dvanced Power MOSEET FEATURES BV DSS = 100 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n - ■ Lower Input Capacitance In = 28 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature
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IRFW/I540A
IRFS140A
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pj 89 diode
Abstract: LR645 equivalent FED-STD-209 pj 54 diode TN0110 equivalent pj 57 diode CCW SOT23 HV5808 220v ac to 12V 20A SMPS high-frequency control sot-89
Text: Supertexinc. Short Form Catalog '96 High Voltage Integrated Circuits and DMOS Transistors Supertex inc. Leadership in CMOS/D MOS Technologies Supertex, Inc. designs, develops, manufactures, and markets quality semiconductor products for use in data processing, tele
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O-220
O-243
OT-89)
OT-23
20-Terminal
pj 89 diode
LR645 equivalent
FED-STD-209
pj 54 diode
TN0110 equivalent
pj 57 diode
CCW SOT23
HV5808
220v ac to 12V 20A SMPS
high-frequency control sot-89
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