LH51V2008 Search Results

LH51V2008 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
LH51V2008		Sharp	2M SRAM		Original	PDF

LH51V2008 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
LH51V2008 Abstract: 32-PIN Text: PRODUCT INFORMATION LH51V2008 2M SRAM Integrated Circuits Group APPLICATIONS: Pager PDA Set Top Box Cellular Phone 32-PIN TSOP PINOUT 32-PIN TSOP FEATURES • Access time 85 ns MAX. • Operating current – 40 mA (MAX.) – 5 mA (MAX. tRC, tWC = 1 µs)	Original	LH51V2008 32-PIN TSOP32-P-0813) 51BV2008-2 MS-J10105D; SMT98210 LH51V2008	PDF
icz1 Abstract: No abstract text available Text: LH51V2008HS-85LL 2 M S R A M Model No.: LHSV282S Spec No.: MS-J10706 Issue Date: July 8, 1998 SHARP LHSV282S # Handle this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited	OCR Scan	LH51V2008HS-85LL LHSV282S) MS-J10706 LHSV282S icz1	PDF
LQ070T5BG01 Abstract: LM24P20 LM162KS1 BSCR86L00 IR2C07 LM5Q31 IR3Y29B BSCU86L60 lq6bw lq6bw506 Text: INDEX 1 0 4 - 1 0 9 _ DC_ GL1PR112.69 GL3KG63. 66 GL5EG41.66 1 0 4 - n 0 5 O o c .113 DC1B1CP. 100 GL1PR135.69 GL3KG8. 66	OCR Scan	109-n GL1PR112. GL1PR135. GL1PR136. GL1PR211. GL1PR212. GL3KG63. GL3P201. GL3P202. GL3P305. LQ070T5BG01 LM24P20 LM162KS1 BSCR86L00 IR2C07 LM5Q31 IR3Y29B BSCU86L60 lq6bw lq6bw506	PDF
IR3Y29B Abstract: ir3y26a1 IR4N IR3T24N IR3C08N ir2c53 ir2c05 li3301 IR3Y08 IR2E02 Text: Index Model No. IR3T ARM710 ARM7DI ARM7DM ARM7TDMI ARM7TDMI-SPL ARM8 ARM810 CMOS CMOS CMOS CMOS F series G series J series K series ID22 series ID222XX ID223XX ID224XX ID226XX ID227XX ID229XX ID22DXX ID22FXX ID22HXX ID240 series ID240DXX ID240EXX ID240GXX	OCR Scan	ARM710 ARM810 IR3T24 IR3T24N IR3Y05Y IR3Y08 IR3Y12B IR3Y18A IR3Y21 IR3Y26A IR3Y29B ir3y26a1 IR4N IR3T24N IR3C08N ir2c53 ir2c05 li3301 IR2E02	PDF
Untitled Abstract: No abstract text available Text: MEMORIES Low voltage operation Bit Capacity configuration 16 k 64k x8 x8 ★ Access time Supply current ns MAX. Cycle time Operating Standby (ns) MIN. (mA) MAX. (mA) MAX. Model No. LH5116SN x8 x8 1M x 16 2M x 16 1 5 *7 Supply Operating voltage temp. (V)	OCR Scan	24SOP LH5116SN LH5164AVN/AVT LH5164AV3HN LH5164AVHN/AVHT LH5164AST LH5164ASHN/ASHT LH51V256N/T-85SL LH51V256HN/HT-85SL LH52CV256N/T-10LL	PDF
LH521007AK-20 Abstract: No abstract text available Text: STATIC RAM ☆ New product ★ Under development STATIC RAMs ♦ Features • The product lineup includes a wide variety of bit configurations x4, x8, x l6 , x l8 , x32 . • High-speed synchronous devices for the secondary cache memory are available for use with low-voltage, lowpower CPUs idpal for portable equipment.	OCR Scan	LH5116SN LH5164AVN/AVT LH5164AV3HN 24SOP 28S0P/28TS0P LH5268A/AN/AD-1 52256C -70LIÆ 710LL LH521007AK-20	PDF
operating Abstract: LH52E1000 Text: MEMORIES Static RAMs W ★ Under development Low voltage operation Capacity confjguratj0n 16k x8 64k Model No. Access time ns 8 5 2 0 0 2 5 0 5 00 10 0 0 x8 LH5116S Supply voltage : 3 V ± 10% Operating temperature : 0 to 50*C LH5164AV Supply voltage : 2.7 to 5.5 V	OCR Scan	LH5116S LH5164AV LH5164AV3H LH5164AVH LH5164AS LH5164ASH LH51V256 LH51V256H LH52E1000 LH51V1016CJ operating LH52E1000	PDF
Untitled Abstract: No abstract text available Text: L H 5 1 V 2 8 J S - 2M SRAM Model No.: LHSV286S Spec No.: MS-J10707 Issue Date: July 9, 1998 8 5 L L SHARP LHSV286S # Handle this document ca re fu lly for it contains material protected by international copyright law. Any reproduction, fu ll or in part, of this material is prohibited	OCR Scan	LHSV286S) MS-J10707 LHSV286S LH51V2008JS	PDF