w2s sot23
Abstract: ML SOT23 FET SOT23 60V ZVN3306F ZVP3306F
Text: SOT23 P-CHANNEL ENHANCEMENT ZVP3306F MODE VERTICAL DMOS FET ISSUE 3- JANUARY I L 1996 FEATURES . 60 Volt Vr>s . Ro;, ,=14 2 s D PARTMA13KING DETAIL COMPLEMENTARY - ML G TYPE - ZVN3306F SOT23 ABSOLUTE MAXIMUM _ RATINGS. PARAMETER [Drain — Sc, urce (;ontl~luuus
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ZVP3306F
PARTMA13KING
ZVN3306F
w2s sot23
ML SOT23
FET SOT23 60V
ZVN3306F
ZVP3306F
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ALC882H
Abstract: bridge rb60 PCB17 rb40 bridge CT198 ct511 CT-431 CT417 NVIDIA GPU RT247
Text: 4 3 Dothan SOCKET 479 478 uFCPGA DC JACK & SELECTOR CHARGER PAGE 3,4,5 VRAM 4M * 32 * 2 PAGE 33 PAGE 34 HOST BUS PAGE 44 , 45 , 46 FSB 400 / 533 MHz +1.1/1.25V (1.05V)VTT NVVDD +1.8VDDRM VGA Power SC1470 SMDDR_VTERM ( +1.2V ) +1.8VRUN PCI-E Power OZ813 APL5912
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MS1022
100MHZ
33MHZ
SC1470
OZ813
APL5912
SC1470
AME8805DEFT
SC1403
MAX1907
ALC882H
bridge rb60
PCB17
rb40 bridge
CT198
ct511
CT-431
CT417
NVIDIA GPU
RT247
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motorola diode device data
Abstract: IV01TS
Text: SILICON EPICAP DIODE . . . designed fo r 900 MHz frequency control and tuning applications; providing solid-state re lia bility in replacem ent of mechanical tuning methods. MMBV809LT1* CASE 318-07, STYLE 8 SOT-23 TO-236AB • Controlled and U niform Tuning Ratio
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MMBV809LT1*
OT-23
O-236AB)
IV01TS)
MMBV809LT1
motorola diode device data
IV01TS
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RFTN
Abstract: WSD420
Text: WSD420 S u rface M oun t S ch ottk y lia rrier J iodes Feiftui^B: *Low Power Rectification *Snnaii Surface Mounting Type *Low r <1h =5t>nA Typ) *High Reliability Description: These schottky barrier diodes are designed for high speed switching application5 circuit protection, and voltage clampingj
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50nATyp)
OT-23
WSD420
-60Hz
WSD420
RFTN
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Untitled
Abstract: No abstract text available
Text: Final Electrical Specifications _ LTC1754-5 r r u u m TECHNOLOGY Micropower, Regulated 5V Charge Pump with Shutdown in SOT-23 September 1999 FCRTURCS D C S C R IP TIO n • U ltralow Pow er: liN = 1 3 liA ■ Regulated 5 V ± 4 % Output Voltage
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LTC1754-5
OT-23
LTC1754-5
LTC1517-5/LTC1517-3
LTC1522
LT1615
LTC1682
917545i
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01 tcc
Abstract: V209
Text: MMBV109LT1* MV209* SILICON EPICAP DIODES . . . designed for general frequency control and tuning applications; provid ing solid-state re lia bility in replacem ent o f mechanical tuning methods. CASE 318-07, STYLE 8 SOT-23 TO-236AB • High Q w ith Guaranteed M inim um Values at VHF Frequencies
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MMBV109LT1*
MV209*
OT-23
O-236AB)
MMBV109LT1
O-226AC)
BV109LT1
01 tcc
V209
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IR1210
Abstract: la 4725 ZC930
Text: ZC930 SERIES SOT23 SILICON HYPERABRUPT VARIABLE CAPACITANCE DIODES ISSUE 6 - JANUARY 1998 Q FEATU RES * V H F T u n in g * O ctave T u n in g fro m 0 T O 6 V o lts * High R e lia b ility and L o w P a ra sitic s * L o w Leak ag e T y p ic a lly < 200pA at 10V
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200pA
ZC930
ZC931
50MHz
IR1210
la 4725
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marking DIODE 2U 04
Abstract: mosfet marking code AL sot-23 TSM2311 TSM2311CX marking 2RV SOT-23
Text: s TAIWAN SEMICONDUCTOR TSM2311 20V P-Channel MOSFET pb RoHS C O M P LiA N C E PRODUCT SUMMARY SOT-23 1 Vos (V) F in Definition: 1. Gat e 2. Sour ce 3 -20 3 . D ra in 2 RDS(cn)(mQ) b (A) 55 @ VGs = -4.5V -4.Û 85 @ V«s - -2.5V -2.5 ffestufss Block Diagram
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TSM2311
OT-23
TSM2311CX
OT-23
marking DIODE 2U 04
mosfet marking code AL sot-23
TSM2311
marking 2RV SOT-23
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CTLS5064
Abstract: SCR PNPN scr SOT-23 sfz 450 CTLS5064-M532 CTLS5064R-M532 CTLS5064R-M532M TLM532 SOT-23 IP
Text: Cental _S ] iH lia l nductor c< CTLS5064-M532 CTLS5064R-M532 fifMIH TLM532 K W H J S M T 3.1mm x 2.1mm x 1.0mm (BJS) 2 3 1 CTLS5064-M532 2 3 CTLS5064R-M532 • V DRM = 400V . SOT-23 • • SOT-223 & £ '> 86% o mmtt sot-2 23 • 44% „ (Halogen Free) i£i+°
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TLM532
CTLS5064-M532
CTLS5064R-M532
tlm532
CTLS5064R-M532
OT-23
OT-223
CTLS5064
SCR PNPN
scr SOT-23
sfz 450
CTLS5064R-M532M
SOT-23 IP
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MMBV105G
Abstract: No abstract text available
Text: SILICON EPICAP DIODE MMBV105GLT1* . . . d esig n e d in the S u rfa c e M ount p ackage fo r general frequency control and tuning a p p lic a tio n s; p ro vid in g solid -state re lia b ility in rep lacem en t of m e c h a n ic a l tu ning m ethod s. CASE 318-07, STYLE 8
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MMBV105GLT1*
OT-23
O-236AB)
3/c25
BV105GLT1
BV105G
MMBV105GLT1
MMBV105G
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Untitled
Abstract: No abstract text available
Text: SILICON EPICAP DIODE . . . desig n ed fo r 900 MHz fre q u e n cy c o n tro l and tu n in g a p p lic a tio n s ; p ro v id in g so lid -sta te re lia b ility in re p la ce m en t o f m echanical tu n in g m ethods. MMBV809LT1* CASE 318-07, STYLE 8 SOT-23 TO-236AB
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MMBV809LT1*
OT-23
O-236AB)
33AS8,
27TfC
MMBV809LT1
8V809L
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409LT
Abstract: marking 9l sot23
Text: SILICON EPICAP DIODES MMBV409LT1* . . . desig n ed fo r general fre q u e n cy c o n tro l and tu n in g a p p lic a tio n s ; p ro v id in g so lid -sta te re lia b ility in re p la ce m en t o f m echanical tu n in g m ethods. MV409* • H igh Q w ith G uaranteed M in im u m Values at VHF Frequencies
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MMBV409LT1*
MV409*
OT-23
O-236AB)
MMBV409LT1,
MV409
409LT
marking 9l sot23
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C25M
Abstract: No abstract text available
Text: SILICON EPICAP DIODE MMBV105GLT1* . . . d e s ig n e d in th e S u rfa c e M o u n t p ac k a g e fo r g e n e ra l fre q u e n c y c o n tro l a n d tu n in g a p p lic a tio n s ; p ro v id in g s o lid -s ta te r e lia b ility in r e p la c e m e n t o f
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MMBV105GLT1*
OT-23
O-236AB)
C3/C25
MMBV105GLT1
MMBV105GLT1
BV105GL
C25M
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diode J4S
Abstract: ZC831 ZC834A ZC832A
Text: SOT23 SILICON VARIABLE CAPACITANCE DIODES ISSUE 4-JU N E 1996 L . ZC830/A/B to -?Q836/ A/B FEATURES * Close Tolerance C-V Characteristics * High Tuning Ratio * Low iR Enabling Excellent Phase Noise Performance lR T ypically <200pA at 25V ABSOLUTE MAXIMUM RATINGS.
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200pA
ZC830/A/B
50MHz
ZC830)
ZC830B)
ZC830/A/B
ZC836/A/B
ZC830
ZC831
ZC832
diode J4S
ZC834A
ZC832A
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FMMJ4393
Abstract: j4393 FMMJ4392 FMMJ4391
Text: FMMJ4391 to FM M J4393 SOT23 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS P AR TM AR KIN G D ETAILS: FM M J4391 - C91 FM M J4392 - C 92 F M M J 4 3 9 3 - C 93 APPLIC ATIO N AR EAS: * LOW ON RESISTANCE SW ITCHES * CHOPPERS ABSOLUTE MAXIMUM RATINGS at Tamb = 25°C
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J4391
J4392
FMMJ4391
J4393
225mW
J4393
FMMJ4392
FMMJ4393
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Untitled
Abstract: No abstract text available
Text: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - DECEMBER 1995 ZVN3320F O FEATURES * 2 0 0 V o lt V DS * ^ D S o n = o P A R T M A R K IN G D E T A IL - M U SOT23 ABSOLUTE MAXIMUM RATINGS. PARAM ETER SYM BO L D ra in -S o u r c e V o lta g e
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ZVN3320F
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Untitled
Abstract: No abstract text available
Text: PRECISION 1.235VOLT MICROPOWER VOLTAGE REFERENCE ZR1004 D RA FT IS SU E A - MARCH 1998 D EV ICE DESCRIPTIO N FEATURES The ZR1004 is a bandgap reference circuit design to operate from v ery lo w currents, typ ically 5|uA. The device is available in a SOT23 surface mount package, offering the
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235VOLT
ZR1004
LT1004and
ZR1004F01
ZR1004N801
ZR1004R01
ZR1004Y01
ZR1004F02
ZR1004N802
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR tu NC7SZ86 TinyLogic UHS 2-Input Exclusive-OR Gate General Description Features The NC7SZ86 is a single 2-Input Exclusive-OR Gate from Fairchild's Ultra High Speed Series of TinyLogic™ in the space saving SOT23 package. The device is fabricated with
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NC7SZ86
NC7SZ86
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LC-1
Abstract: SY SOT23
Text: "SuperSOT" SOT23 NPN SILICON POWER DARLINGTON TRANSISTOR ISSUE 1 - APRIL 97 FEATURES * 625m W POWER DISSIPATION H ighest c u rre n t c a p a b ility SOT23 D a rlin g to n Very h igh hFE - sp e cifie d at 2A 5K m in im u m - ty p ic a lly 600 at 5A COM PLEM ENTARY TYPE - F M M T734
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300us.
FMMT634
LC-1
SY SOT23
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marking code 2Ap
Abstract: Silicon N-Channel Junction FET sot23 transistor 2Ap BF862 fet junction n-channel transistor Philips fet SOT23 code marking Junction-FET fet-bf862 junction fet high frequency n-channel SOT23 FET
Text: Philips Semiconductors Product specification N-channel junction FET BF862 FEATURES PINNING SOT23 • High transition fre q u e n cy fo r excellent se n sitivity in AM car radios PIN • High transfer adm ittance. DESCRIPTION 1 source 2 drain 3 gate APPLICATIONS
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BF862
O-236AB
marking code 2Ap
Silicon N-Channel Junction FET sot23
transistor 2Ap
BF862
fet junction n-channel transistor
Philips fet SOT23 code marking
Junction-FET
fet-bf862
junction fet high frequency n-channel
SOT23 FET
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darlington sot23 pnp
Abstract: No abstract text available
Text: "S U P ER SO T" SOT23 PNP SILICON POWER DARLINGTON TRANSISTOR FMMT734 ISSU E 1 - A U G U S T 1997_ FEATU RES * 625mW POWER DISSIPATION * V e ry High hFE at High C u rre n t 5A * E x tre m e ly L o w V CE(sat) at High C u rre n t (1A)
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FMMT734
625mW
-500m
100mA
darlington sot23 pnp
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BFR30
Abstract: BFR31 marking M2p 21 sot23 m2p SOT23 MDA660
Text: Philips Semiconductors Product specification N-channel field-effect transistors BFR30; BFR31 DESCRIPTION Planar epitaxial symmetrical junction N-channel field-effect transistor in a plastic SOT23 package. 3 • Low level general purpose amplifiers in thick and
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BFR30;
BFR31
BFR30:
BFR30
BFR31
marking M2p 21 sot23
m2p SOT23
MDA660
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47H2
Abstract: RGB LED 10w htf hafo AAA sot23-5 ja smd LM2731 SMD IC TL 431 smd T3 BH T118 SOT23 WU
Text: L H A iy ° | 7 ß ! S 2 1. g O ^ ^ Z L m * \5 & \ S te l ¥ » Ö fi LM20 LM26 LM60 LM70 LM71 LM74 Ü?|X| «9 2.4V, 1 0 ^ £ i!!* l ±3°CS| 31$ 2^14! M 5L±m 2.7V £ E - tijAi C|*IU S i S P I/MICROWIRE 10U|M S i q x |g c ] * l l £ 5 . 4PH # 0 » DVD m icro SM D-4,
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S40ICH
SC70-5,
OT23-5
OT23-3
91amplifier8
CLC014
narrow-14
CLC016
TSSOP-28,
47H2
RGB LED 10w htf
hafo
AAA sot23-5
ja smd
LM2731
SMD IC TL 431
smd T3 BH
T118
SOT23 WU
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CW65
Abstract: No abstract text available
Text: BCW65 BCW66 SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 3 - AUGUST 1935_ P A R T M A R K IN G D E T A IL S B C W 65A - EA B CW 65A R - BCW 65B - EB B C W 65B R - 4V 5V B CW 65C - EC B C W 65C R - 6V B CW 66F - EF B CW 66FR -
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BCW65
BCW66
CW65
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