Untitled
Abstract: No abstract text available
Text: SOLID STATE D I V I S I O N LIGHT EMITTING DIODE LED Light Emitting Diode Light emitting diodes LEDs are opto-semiconductors that convert electric energy into light energy. Compared to semiconductor lasers (laser diodes or LD), LEDs offer advantages such
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DK-8381
KLED0002E01
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Abstract: No abstract text available
Text: Infrared light emitting diode, side-view type SIM-22ST The SIM-22ST is a GaAs infrared light emitting diode housed in side emission. High output with 1.5 lens. 2.54 ± 0.1 Dimensions Unit : mm 1.0 Applications Light source for sensors 1.9 Features
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SIM-22ST
SIM-22ST
R1010A
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Untitled
Abstract: No abstract text available
Text: Infrared light emitting diode, side-view type SIM-22ST The SIM-22ST is a GaAs infrared light emitting diode housed in side emission. High output with 1.5 lens. Applications Light source for sensors 1.0 2.54 ± 0.1 Dimensions Unit : mm 1.9 Features
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SIM-22ST
SIM-22ST
R1010A
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SIM-22ST
Abstract: No abstract text available
Text: Infrared light emitting diode, side-view type SIM-22ST The SIM-22ST is a GaAs infrared light emitting diode housed in side emission. High output with 1.5 lens. 1.0 2.54 ± 0.1 Dimensions Unit : mm Applications Light source for sensors 1.9 Features
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SIM-22ST
SIM-22ST
12Min.
R1010A
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LN172
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN172 GaAlAs Infrared Light Emitting Diode Unit : mm ø4.2 +0.2 –0.1 Features High-power output, high-efficiency : PO = 12 mW typ. Light emitting spectrum suited for silicon photodetectors : λP = 900 nm (typ.) 2.4±0.3 12.7 min.
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LN172
10nductor
LN172
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LN189S
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN189S GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 Infrared light emission close to monochromatic light : λP = 880 nm typ. Narrow direcivity using spherical lenses; works well with optical
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LN189S
LN189S
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LN189L
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN189L GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 Infrared light emission close to monochromatic light : λP = 880 nm typ. Narrow directivity using spherical lenses; works well with optical
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LN189L
LN189L
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Untitled
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN52 GaAs Infrared Light Emitting Diode Unit : mm 3.0±0.3 For optical control systems Wide directivity, matched for external optical systems : θ = 100 deg. Infrared light emission close to monochromatic light : λP = 950 nm
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Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN162S GaAs Infrared Light Emitting Diode For optical control systems Unit: mm 3.75±0.3 • Features 12.5 min. • High-power output, high-efficiency: PO = 3.5 mW typ. • Infrared light emission close to monochromatic light:
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LN162S
CTRLR102-001
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LN162S
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN162S GaAs Infrared Light Emitting Diode Unit : mm ø3.0±0.15 3.75±0.3 2.0±0.2 For optical control systems Features High-power output, high-efficiency : PO = 3.5 mW typ. 12.5 min. Infrared light emission close to monochromatic light :
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LN162S
LN162S
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AVERAGE QUASI PEAK AND PEAK DETECTOR
Abstract: nixie tube circuit
Text: • PRODUCT EMITTING DIODES LIGHT EMITTING DIODES APPLICATION NOTES Among photo semiconductor devices, the light emitting diode only exists as a P-N junction
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Untitled
Abstract: No abstract text available
Text: OKI electronic components OLP124 _ GaAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD124 is a high-output GaAs infrared light emitting diode sealed with a transparent resin in a TO-18 metal case. Its light emission wavelength peaks at 940 nm. Because of its high reliability, the
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OLP124
OLD124
OLD124
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Untitled
Abstract: No abstract text available
Text: K2P002^-27-32 OKI electronic components QLD2203_ GaAIAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD22Q3 is a very high-output GaAIAs infrared light emitting diode sealed with an achromatic transparent epoxy resin. Its light emission wavelength peaks at 910 nm. The OLD22D3 can be the
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K2P002
QLD2203_
OLD22Q3
OLD22D3
OLD22Q3
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OLD222
Abstract: No abstract text available
Text: OKI electronic components OLD222_ GaAs infrared Light Emitting Diode GENERAL DESCRIPTION The OLD222 is a high-output GaAlAs infrared light emitting diode sealed with a glass lens in a To18 case. Its light emission wavelength peaks at 910 ran. Because of its high reliability, the OLD222
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OLD222_
OLD222
100mA
OLD222
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Untitled
Abstract: No abstract text available
Text: K2P0Ült>-27-32 O K I electronic components OLP222 H_ GaAIAs Infrared Light Emitting Diode with Non-Spherical Surface Lens GENERAL DESCRIPTION The OLD222H is a high-output GaAIAs infrared light emitting diode sealed with a glass lens in a
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OLP222
OLD222H
OLD222H
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TA 8202 K
Abstract: 1000 nm light emitting diode OLD2202
Text: H2P0024-27-32 O K I electronic components OLD22Q2 GaAIAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD22Q2 is a very high-output GaAIAs infrared light emitting diode sealed with an achromatic transparent epoxy resin. Its light emission w avelength peaks at 910 nm. The OLD22G2 can be the
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H2P0024-27-32
OLD22Q2
OLD22Q2
OLD22G2
Ifrm/100
TA 8202 K
1000 nm light emitting diode
OLD2202
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Untitled
Abstract: No abstract text available
Text: I-2PIW14-27-32 OKI electronic components 0L P125_ GaAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD125 is a high-output GaAs infrared light emitting diode sealed with a transparent epoxy resin in a ceramic case. Its light emission wavelength peaks at 940 n m . Because of its high reliability,
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I-2PIW14-27-32
OLD125
940nm
OLD125
lfRM/75
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eh200
Abstract: No abstract text available
Text: F:2P0I. US-27-33 O K I electronic OLD224 components GaAIAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD224 is a high-output GaAIAs infrared light emitting diode sealed with a transparent epoxy resin in a TO-18 case. Its light emission wavelength peaks at 910 nm. Because of its high reliability,
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US-27-33
OLD224
OLD224
eh200
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OCS32
Abstract: No abstract text available
Text: !:2STh139-27-33 OKI electronic components 0C S32 Optical PNPN Switches GENERAL DESCRIPTION The OCS32 is an optical PNPN switch, combining an infrared light emitting diode and PNPN elements photothyristors in a single 8-pin plastic package. The GaAs light emitting diode acts as
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2STh139-27-33
OCS32
OCS32
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910nm
Abstract: No abstract text available
Text: O K I electronic components 0LD225 GaAIAs Infrared Light Emitting Diode GENERAL DESCRIPTION T heO L D 225 is a high-output GaAIAs infrared light emitting diode sealed w ith a transparent epoxy resin in a ceramic case. Its light emission wavelength peaks at 910 ran. The O LD 225 can have the
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0LD225
OLD225
910nm
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photo sensor pin diagram
Abstract: transistor 1BT transistor 1BT 12 nIc 4 PHOTO SENSOR of application OCS33 vak-50v 1Bt 60
Text: OKI electronic components OCS33 Optical PNPN Switches GENERAL DESCRIPTION The OCS33 is an optical PNPN switch, combining a GaAs infrared light emitting diode and a silicon PNPN photo sensor in a single 8-pin plastic package. The GaAs light emitting diode acts as the input
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OCS33
b724S40
OCS33
72M2M0
photo sensor pin diagram
transistor 1BT
transistor 1BT 12
nIc 4
PHOTO SENSOR of application
vak-50v
1Bt 60
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4 PIN TO46 package
Abstract: TO-46-type
Text: E2P0021-27-32 O K I electronic components OLD232 GaAIAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD232 is a high-output GaAIAs infrared light emitting diode sealed with a glass lens in a high ly reliable metal can on a TO-46 type stem. Its light emission w ave peaks at 910 run.
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E2P0021-27-32
OLD232
OLD232
4 PIN TO46 package
TO-46-type
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PNPN
Abstract: OCS32 photo sensor pin diagram PHOTO SENSOR of application 357 photo
Text: OKI electronic com ponents OCS32 Optical PNPN Switches GENERAL DESCRIPTION The OCS32 is an optical PNPN switch, combining a GaAs infrared light emitting diode and a silicon PNPN photo sensor in a single 8-pin plastic package. The GaAs light emitting diode acts as the input
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OCS32_
OCS32
OCS32
2424D
b72M2M0
PNPN
photo sensor pin diagram
PHOTO SENSOR of application
357 photo
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Untitled
Abstract: No abstract text available
Text: Galliumarsenidphosphid-Lumineszenzdioden GaAsP Red Light Emitting Diodes Anwendung: Application: Rotleuchtende Diode für allgemeine Anzeigezwecke Red light em itting diode for general indicating purposes Besondere Merkmale: Features: • Kunststoffgehäuse
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