datasheet light emitting diode
Abstract: Light emitting Diodes light emitting diode 13B1 Chapter CHAPTER 2
Text: Copyright 2005, Sharp Electronics Corp. All Rights Reserved. Chapter 2 – Use of Visible Light Emitting Diodes 2-1 Chapter 2 – Use of Visible Light Emitting Diodes 2-2 Chapter 2 – Use of Visible Light Emitting Diodes 2-3 Chapter 2 – Use of Visible Light Emitting Diodes
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Q62902-B152-F222
Abstract: Q62902-B156-F222 Q62901-B65 led verde 5mm P5101 A0324 LY 3360-K Datenblatt lm776 A671 transistor OSRam LSG T676
Text: LUMINESZENZDIODEN LIGHT EMITTING DIODES LUMINESZENZDIODEN LIGHT EMITTING DIODES LUMINESZENZDIODEN LIGHT EMITTING DIODES SMT-LED-Typenbezeichnungsschema SMT LED type designation system Gurtung von Lumineszenzdioden Taping of LEDs Alle SMT-LED werden im 8- bzw. 12-mm Gurt geliefert.
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12-mm
Q62902-B141-F222
GPXY6739
Q62902-B155-F222
GPXY6738
Q62902-B152-F222
Q62902-B156-F222
Q62901-B65
led verde 5mm
P5101
A0324
LY 3360-K Datenblatt
lm776
A671 transistor
OSRam LSG T676
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Q62902-B152-F222
Abstract: Q62902-B155 Q62902-B141 LM776 3360D Q62703P5269 Q62902-B152 Q62703Q5109 Q62703-Q5083 T676-P1Q1-1
Text: LUMINESZENZDIODEN LIGHT EMITTING DIODES LUMINESZENZDIODEN LUMINESZENZDIODEN LIGHT EMITTING DIODES LIGHT EMITTING DIODES Taping of LEDs SMT LED type designation system Gurtung von Lumineszenzdioden All SMT LEDs are available in 8 mm resp. 12 mm tapes. SMT-LED-Typenbezeichnungsschema
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12-mm
Q62902-B141-F222
GPXY6739
Q62902-B155-F222
GPXY6738
Q62902-B152-F222
Q62902-B155
Q62902-B141
LM776
3360D
Q62703P5269
Q62902-B152
Q62703Q5109
Q62703-Q5083
T676-P1Q1-1
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Q62902-B152-F222
Abstract: lg led tv electronic diagram Q62902-B156-F222 Q62902-B155 A671 transistor Q62901-B65 BZW 70/20 Q62901-B62 a5954 Datasheet diode BZW 70-20
Text: LUMINESZENZDIODEN LIGHT EMITTING DIODES LUMINESZENZDIODEN LIGHT EMITTING DIODES LUMINESZENZDIODEN LIGHT EMITTING DIODES SMT-LED-Typenbezeichnungsschema SMT LED type designation system 2nd and 3rd letter for the color of all MULTILED package outlines higher wavelength = first letter, lower wavelength = second and third letter
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Q62902-B154-F222
Q62902-B141-F222
GPXY6739
GPXY6738
Q62902-B152-F222
lg led tv electronic diagram
Q62902-B156-F222
Q62902-B155
A671 transistor
Q62901-B65
BZW 70/20
Q62901-B62
a5954
Datasheet diode BZW 70-20
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Untitled
Abstract: No abstract text available
Text: SOLID STATE D I V I S I O N LIGHT EMITTING DIODE LED Light Emitting Diode Light emitting diodes LEDs are opto-semiconductors that convert electric energy into light energy. Compared to semiconductor lasers (laser diodes or LD), LEDs offer advantages such
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DK-8381
KLED0002E01
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l943
Abstract: No abstract text available
Text: SOLID STATE D I V I S I O N Selection Guide Feb. 2012 LED Wide variations of Light Emitting Diodes to match various applications LIGHT EMITTING DIODES LED HAMAMATSU offers a broad lineup of light emitters such as high-power, near infrared LED. HAMAMATSU LEDs
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KLED0002E06
l943
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gardasoft
Abstract: indium gallium arsenide phosphide UV-LED 680nm 475nm photocontrol 320nm power led 530nm PP500 Orange605nm
Text: Light Emitting Diodes - A Primer Russ Dahl, Opto Diode Corporation From the Web Exclusive, "Seeing the True Colors of LEDs." Light emitting diodes LEDs are semiconductors that convert electrical energy into light energy. The color of the emitted light depends on the semiconductor material
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360nm
950nm.
320nm
360nm
PP500
gardasoft
indium gallium arsenide phosphide
UV-LED
680nm
475nm
photocontrol
320nm power led
530nm
Orange605nm
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po102
Abstract: LN59 LNA2702L
Text: Infrared Light Emitting Diodes LN59, LNA2702L GaAs Bi-directional Infrared Light Emitting Diodes LN59 Unit : mm 4.0±0.2 Not soldered For light source of VCR VHS System 1.8±0.2 Two-way directivity 15.3±1.0 High-power output, high-efficiency : PO = 1.8 mW (min.)
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LNA2702L
LNA2702L)
100Hz
po102
LN59
LNA2702L
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oslon ssl 150
Abstract: JESD22-A114-D osram LED of oslon OSLUX JESD22-A114D osram LED catalogue sideled OSRAM OSRAM LUW LUW CQDP-LQLS-M8MI osram topled
Text: OSRAM Opto Semiconductors - Product Catalog Home www.osram-os.com search Product Catalog Discontinuation Documents LED Light Emitting Diodes TOPLED Power TOPLED Advanced Power TOPLED Home / LED (Light Emitting Diodes) / OSLON / OSLON SSL / 150°-Linse / LUW CQDP (EQW)
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000000070000940500bc003a
oslon ssl 150
JESD22-A114-D
osram LED of oslon
OSLUX
JESD22-A114D
osram LED catalogue
sideled OSRAM
OSRAM LUW
LUW CQDP-LQLS-M8MI
osram topled
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LN59
Abstract: LN59L LNA2702L photo sensor
Text: Infrared Light Emitting Diodes LN59, LNA2702L LN59L GaAs Bi-directional Infrared Light Emitting Diodes LN59 Unit : mm 4.0±0.2 Not soldered For light source of VCR (VHS System) 1.8±0.2 Two-way directivity 15.3±1.0 High-power output, high-efficiency : PO = 1.8 mW (min.)
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LNA2702L
LN59L)
LNA2702L)
LN59
LN59L
LNA2702L
photo sensor
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LN172
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN172 GaAlAs Infrared Light Emitting Diode Unit : mm ø4.2 +0.2 –0.1 Features High-power output, high-efficiency : PO = 12 mW typ. Light emitting spectrum suited for silicon photodetectors : λP = 900 nm (typ.) 2.4±0.3 12.7 min.
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LN172
10nductor
LN172
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gallium phosphide band structure
Abstract: silicon carbide LED Zinc sulfide Sic led light emitting diode siemens monocrystalline efficiency Siemens LED visible light 35p0 siemens sic leds design
Text: Blue Light Emitting SiliconCarbide Diodes—Materials, Technology, Characteristics Appnote 31 by Dr. Claus Wyrich Siemens Research Laboratories Munich, Germany Introduction Light-emitting diodes LEDs are widely used in the field of electronics as indicator lamps and seven-segment displays
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Untitled
Abstract: No abstract text available
Text: Mid-IR Products Introduction Mid-Infrared Light Emitting Diodes and Photodiodes Light emitting diodes LEDs and Photodiodes (PDs) are semiconductor devices. LED or PD heterostructure is formed by sequential epitaxy of semiconductor layers on the surface of a crystal
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LN189S
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN189S GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 Infrared light emission close to monochromatic light : λP = 880 nm typ. Narrow direcivity using spherical lenses; works well with optical
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LN189S
LN189S
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GaAs 850 nm Infrared Emitting Diode
Abstract: LN151F LN151L LNA2402L LNA2403F
Text: Infrared Light Emitting Diodes LNA2402L LN151L , LNA2403F (LN151F) LNA2402L Unit: mm φ4.6±0.15 12.7 min. GaAs Infrared Light Emitting Diodes 6.3±0.3 Glass lens For optical control systems 2-φ0.45±0.05 2.54±0.25 Forward current IF 100 mA Pulse forward current *
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LNA2402L
LN151L)
LNA2403F
LN151F)
MTGLR102-001
GaAs 850 nm Infrared Emitting Diode
LN151F
LN151L
LNA2402L
LNA2403F
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LN51F
Abstract: LN51L
Text: Infrared Light Emitting Diodes LN51F, LN51L Unit : mm LN51F ø4.6±0.15 4.5±0.2 GaAs Infrared Light Emitting Diodes Glass window 12.7 min. For optical control systems Features 2-ø0.45±0.05 High-power output, high-efficiency : PO = 6 mW typ. 2.54±0.25
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LN51F,
LN51L
LN51F
LN51L)
LN51F)
LN51F
LN51L
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Untitled
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN52 GaAs Infrared Light Emitting Diode Unit : mm 3.0±0.3 For optical control systems Wide directivity, matched for external optical systems : θ = 100 deg. Infrared light emission close to monochromatic light : λP = 950 nm
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Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN162S GaAs Infrared Light Emitting Diode For optical control systems Unit: mm 3.75±0.3 • Features 12.5 min. • High-power output, high-efficiency: PO = 3.5 mW typ. • Infrared light emission close to monochromatic light:
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LN162S
CTRLR102-001
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LN162S
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN162S GaAs Infrared Light Emitting Diode Unit : mm ø3.0±0.15 3.75±0.3 2.0±0.2 For optical control systems Features High-power output, high-efficiency : PO = 3.5 mW typ. 12.5 min. Infrared light emission close to monochromatic light :
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LN162S
LN162S
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LN69
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN69 GaAs Infrared Light Emitting Diode Unit : mm Emitted light spectrum suited for silicon photodetectors : λP = 940 nm typ. Good radiant power output linearity with respect to input current Long lifetime, high reliability
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LN151F
Abstract: LN151L LNA2402L LNA2403F
Text: Infrared Light Emitting Diodes LNA2403F Unit : mm 4.6 0.15 Glass window 4.5 0.2 LNA2403F, LNA2402L LN151F, LN151L 12.7 min. GaAs Infrared Light Emitting Diodes For optical control systems Features 2- 0.45 0.05 2.54 0.25 1. High-power output, high-efficiency : PO = 7.5 mW (typ.)
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LNA2403F
LNA2403F,
LNA2402L
LN151F,
LN151L)
LN151F)
LN151F
LN151L
LNA2402L
LNA2403F
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AVERAGE QUASI PEAK AND PEAK DETECTOR
Abstract: nixie tube circuit
Text: • PRODUCT EMITTING DIODES LIGHT EMITTING DIODES APPLICATION NOTES Among photo semiconductor devices, the light emitting diode only exists as a P-N junction
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IR LED and photodiode pair long distance
Abstract: No abstract text available
Text: ]-:2RXHP-27-34 LIGHT EMITTING DIODES PRODUCT OVERVIEW 1. FEATURES AND FIELDS OF APPLICATION 1-1 Features of Light Emitting Diodes Since light emitting diodes are photo semiconductor devices, they have the following features. 1 (2) (3) (4) (5) (6) Long life; vibration and shock proof
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2RXHP-27-34
IR LED and photodiode pair long distance
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S 205T
Abstract: No abstract text available
Text: SEC LIGHT EMITTING DIODES ELECTRON DEVICE SG205D,SG205T GaP LIGHT EM ITTIN G DIODE GREEN -N EPO C SERIES— DESCRIPTION The SG 205D, SG 205T are Gap Gallium Phosphide Light Emitting Diodes which are mounted on the lead frames and molded in green diffused, green clear plastic respectively. They are ideally suited for front panel indicator applications.
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SG205D
SG205T
SG2060:
SG205D/Lum
S 205T
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