T-989
Abstract: 32NC2A B500 stub tuner waveguide L-6S43A
Text: T-989 From- 14:25 08-28-01 Electron Devices REVISION S SPEOIFICATION SHEESPECPECIFICATION THE PROVISIONS - TYPE NO: L-6S43A EFFECTIVE 7-z_-'9/ APPLY TO THIS OF THE LATEST ISSUE OF MIL-E-I F-534 P.02 OF SHEET SPECIFICATION B500 MHz to 9600 MHz, forced ,r DESCRIPTION: Magnetron, pulsed, 65 kWpeak power, mechanically tunable
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T-989
L-6S43A
F-534
T-98g
L6543
L-6543
T-989
32NC2A
B500
stub tuner waveguide
L-6S43A
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elmwood sensors ltd
Abstract: elmwood thermal switch saft rectifier ABB sensycon SICK OPTEX elmwood sensors Oscillatek abb entrelec relays Litton Electron Devices microwave tubes Anzac Electronics
Text: S OURCE ESB’ S Last Two Years of M ANUFACTURER N AME C HANGES Specifying and buying parts is hard enough without constant name changes due to manufacturing mergers, acquisitions and company spin-offs. Historically, each regional Electronics Source Book has diligently tracked these changes to save you time and headaches. We're happy to provide this
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BMIC/Ele03
elmwood sensors ltd
elmwood thermal switch
saft rectifier
ABB sensycon
SICK OPTEX
elmwood sensors
Oscillatek
abb entrelec relays
Litton Electron Devices microwave tubes
Anzac Electronics
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epa025
Abstract: excelics epa025 EFA072A EFA025A excelics w2343 AVANTEK transistor
Text: Hydrogen Test on EFA072A and EFA025A Background It was reported from the field that when EFA072A devices from W234-2 were life tested in hydrogen environment, the Idss of the DUT has increased by 15% or so in a few days. However, when the devices were life tested in open air
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EFA072A
EFA025A
W234-2
EFA072
W234-3,
48hrs)
168hrs)
epa025
excelics epa025
EFA025A
excelics
w2343
AVANTEK transistor
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l4768
Abstract: magnetron 2.45 magnetron
Text: RZV!S IONS INITIATED 89-02-02 WJNW,DJL,RB A REVISED PER ECO-A5177 93-04-16 RLB,JF, JRL B REVISED PER ECO-A7661 95-05-18 RLB,JF, JRL C REVISED PER ECO-A11654 98-01-15 &irsQ,.- jo- INIT PRODDCT DEBCRIPTION: QKNRAfki. Coaxial Magnetron, mechanically tunable from 34.5 GHz to 35.5 GHz, 20 to 40 kw
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ECO-A5177
ECO-A7661
ECO-A11654
L-47-
l4768
magnetron 2.45
magnetron
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ACT1020
Abstract: JH05 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 44 pin actel 1020b JEDEC-A113 ACTEL 1020B ACP55 smd U1p Jl03 JL-03
Text: Quality & Reliability Guide February 2001 2001 Actel Corporation All Rights Reserved. Actel and the Actel logo are trademarks of Actel Corporation. All other brand or product names are the property of their respective owners. Contents 1. Overview of Actel’s Quality and Reliability Guide . . . . . . . . . . . . . . . . . . . .1
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Germanium itt
Abstract: thyratron pl 21 Mallory Vibrator Data Book National Electronics ignitrons bat CR Li Mn lab test result Helipot POTENTIOMETER Bendix Transistors selenium rectifier westinghouse 5000W AUDIO AMPLIFIER 6cl6
Text: 1q5 OCZ CHICAGO, 5' Three Regional Conventions SHARE THOS Pleose Route COPY! to www.americanradiohistory.com ,titiSCON 1956 the replacement for tubular ceramic and mica capacitors RMC DISCAPS 520 .260 .860 .890 RMC RMC .570 .355 .400 1.290 .760 .790 RMC 470
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P-100
N-1500
N-2200
Germanium itt
thyratron pl 21
Mallory Vibrator Data Book
National Electronics ignitrons
bat CR Li Mn lab test result
Helipot POTENTIOMETER
Bendix Transistors
selenium rectifier westinghouse
5000W AUDIO AMPLIFIER
6cl6
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Untitled
Abstract: No abstract text available
Text: LITTON IND/LITTON SOLID Litton 5bE D WÊ SS442DD □□□□SED b2T « L I T T Low-Distortion/Medium Power M icrowave GaAs FET Electron Devices D-6828 Preliminary Specifications FEATURES • O utput Power 19 dBm @ 18 GHz ■ 1dB Power Gain 7 dB @ 18 g h z
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SS442DD
D-6828
D-6828
2285C
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transistor af18
Abstract: litton Litton Solid State D-2503 Solid State Microwave C band FET transistor s-parameters
Text: LITTON IND/LITTON SOLI] Litton SLE ]> • 55M42DD ODOGS1Q 7fiD ■ L I T T Low Noise/M edium Power M icrow ave GaAs FET Electron Devices D-2503 Preliminary Specifications 440 FEATURES 280 ■ Noise Figure 3.5 ■ Gain a t NF 6.5 dB @ 18 g h z 94 dB @ Y77
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55M42DD
D-2503
D-2503
devices26
2285C
transistor af18
litton
Litton Solid State
Solid State Microwave
C band FET transistor s-parameters
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Untitled
Abstract: No abstract text available
Text: SLE T> LITTON IND/LITTON SOLI] Litton • SS442GD DDDGS1D 7ÖG ■ L I T T Low N oise/M edium Power M icrow ave GaAs FET Electron Devices D-2503 Preliminary Specifications FEATURES ■ Noise Figure 3.5 ■ Gain a t NF 6.5 ■ 0.50 X 280 um Ti/Pt/Au G ate
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SS442GD
D-2503
D-2503
2285C
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litton
Abstract: Litton Solid State transistor 2501 D2501 Litton Systems 250-1 MAG D-2501 RF FET TRANSISTOR 3 GHZ VDS35 55M4S
Text: J— X ' V il X 1 H J / / L 1 I LITTON IND/LITTON SOLI] Litton Electron Devices SbE D m 55ML42GD □□ODSDb 55T • L I T T Low Noise/Medium Power Microwave GaAs FET D-2501 Preliminary Specifications FEATURES ■ Noise Figure 2.2 dB @ 8 ghz ■ Gain at NF 9.0dB @ 8 g h z
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SSM42GD
D-2501
I--190-
D-2501
2285C
litton
Litton Solid State
transistor 2501
D2501
Litton Systems
250-1 MAG
RF FET TRANSISTOR 3 GHZ
VDS35
55M4S
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Untitled
Abstract: No abstract text available
Text: LITTON IND/LITTON SOLID Litton SbE D 554M200 D D D D S m 32b « L I T T M edium Power M icrow ave GaAs FET Electron Devices D-3501 Preliminary Specifications FEATURES - • O utput Power 23 dBm @ 8 g h z ■ - UM. 50 ^DRAIN 1/ / / / / / / / / / 7T///7 ///////7 7 7 7 7 1
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554M200
D-3501
D-3501
2285C
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Untitled
Abstract: No abstract text available
Text: 4 • V 11 J. IM J/ / L. ± I LITTON IND/LITTON SOLID l_ X Litton SbE » ■ SSM42GD □□□□SGb SST « L I T T Low Noise/M edium Power M icrow ave GaAs FET Electron Devices D-2501 Preliminary Specifications FEATURES ■ Noise Figure 2.2 dB @ 8 ghz ■ Gain a t NF 9.0dB @ 8 g h z
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SSM42GD
D-2501
D-2501
2285C
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litton
Abstract: Litton Solid State
Text: LITTON IND/LITTON SOLID Litton SbE D SSMMSDD O D O O S m 32b • L ITT Medium Power M icrow ave GaAs FET Electron Devices D-3501 Preliminary Specifications FEATURES -62070 h ■ O utput Power 23 dBm @ 8 g h z ■ 7-7 i r i DRA IN 1/ / / / / / / / / / 7 7 7 / / / / / / / / / / / / / / / I
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D-3501
2285C
litton
Litton Solid State
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Litton LN-200
Abstract: No abstract text available
Text: LITTON IND/LITTON SOLID Litton SbE D • 5S44E00 00DDS2Ö RIO ■ L I T T Dual G a te M icrow ave GaAs FET Electron Devices D-2730 Preliminary Specifications FEATURES MAG 16 d B 18 GHz - Noise Figure 2.5 dB @ 45 18 Ghz » - 430 50- t 45 t 50 Gain at NF 13 dB @ 18 Ghz
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5S44E00
00DDS2Ã
D-2730
30CVn
D-2730
2285C
Litton LN-200
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Untitled
Abstract: No abstract text available
Text: LITTON IND/LITTON SOLID, 5bE D ton • 5544200 0000510 T71 * L I T T M edium Power M icrow ave GaAs FET Electron Devices D-3814 Preliminary Specifications FEATURES ■ Output Power 28 dBm @ 8 ghz ■ 1dB Power Gain 9 dB @ 8 g h z ■ 0.5 x 1400 nm Ti/Pt/Au G ate Two Cells
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D-3814
D-3814
2285C
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S3V 82
Abstract: No abstract text available
Text: LITTON IND/LITTON SOLID SLE D • 55M42D0 0DDD52b 04fl « L I T T Ultra Low-Noise M icrowave GaAs FET D-0777 Electron Devices Preliminary Specifications 440 FEATURES 280 ■ Noise Figure 1.9 d B @ < 46 18 g h z ► Y77Ä ■ Gain a t NF 8 dB @ 18 GHz ' /}; ; ; ///A
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55M42D0
0DDD52b
D-0777
D-0777
2285C
S3V 82
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TRANSISTOR A107
Abstract: No abstract text available
Text: LITTON IND/LITTON SOLID Linon SbE D • 5S4M200 DG0DS12 553 « L I T T Dual Gate Microwave GaAs FET Electron Devices D-2704 Preliminary Specifications FEATURES ■ MAG 18 dB @ 8 GHz ■ Noise Figure 2 .5 dB @ 8 Ghz ■ Gain at NF 13 dB @ 8 Ghz ■ Mixer, Switch, AGC, and Temperature
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5S4M200
DG0DS12
D-2704
340nm
D-2704
2285C
TRANSISTOR A107
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D2502
Abstract: transistor A6t 75 250-2 MAG TH408 D-2502
Text: Linon h i- a i i V in JIND/LITTON .N J // L IT LITTON SOLID SbE D • 5 5 4 4 20 0 00 00 50 Ö OSE ■ LITT Low N oise/M edium Power M icrow ave GaAs FET Electron Devices D-2502 Preliminary Specifications -380- FEATURES ■ -25040 Noise Figure 2.2 dB @ 8 ■
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00D050Ã
D-2502
2285C
D2502
transistor A6t 75
250-2 MAG
TH408
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Litton Electron Devices microwave tubes
Abstract: Litton klystron klystron L-4880B UG344 two cavity klystron reflex klystron klystron pin connection 4880B Litton Electron Devices
Text: Litton Electron Devices 103S Waîrrmnsrar fîrivê Wiiiflmspnn Pennsylvania 17701 Pnona 717 326-3561 Fax: (717) 326-2903 PRODUCTION SPECIFICATION TYPE L-4880A, B, C, E, F REFLEX KLYSTRON DESCRIPTION Conduction Cooled, Long Life, Low Distortion, Extremely Stable Reflex
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L-4880Ã
Litton Electron Devices microwave tubes
Litton klystron
klystron
L-4880B
UG344
two cavity klystron
reflex klystron
klystron pin connection
4880B
Litton Electron Devices
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litton
Abstract: Litton Solid State D-0777 ultra low noise 12GHz radar 77 ghz receiver
Text: LITT ON I N D / LI TT ON SOLID SbE D S5 4 M B 0 Q 0[][]055b 04fi « L I T T Litton Ultra Low-Noise M ic ro w a v e G aA s FET Electron Devices D-0777 Preliminary Specifications 440 FEATURES 280 • Noise Figure 1.9 dB @ < 46 I 18 g h z Y77A ■ Gain at NF 8 dB @ 18 GHz
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S54MB0Q
D-0777
D-0777
2285C
litton
Litton Solid State
ultra low noise 12GHz
radar 77 ghz receiver
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Untitled
Abstract: No abstract text available
Text: L I TT ON I N D / L I T T O N SO LI D SbE D Litton • 5 5 4 4 S D D O O D G S l b ITT « L I T T M edium Power M icrow ave GaAs FET Electron Devices D-3807 Preliminary Specifications Lett Side FET Right Side FET FEATURES ■ Output Power 25 ■ 1dB Power Gain 10 dB @ 8 g h z
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D-3807
D-3807
2285C
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S3V 83
Abstract: S3V 75 S3V 05 S3V 77 Litton LN-200 S3V 09 R/S3V 92
Text: LI T T O N I N D / L I T T O N SO LI » Linon SbE D • SSMMHDG OQGOSOM 4Ö7 « L I T T Low-Noise M icrow ave GaAs FET Electron Devices D-1503 Preliminary Specifications 440 FEATURES 280 ■ Noise Figure 2.6 dB @ 18 GHz 94 Y777\ DRAIN ■ Gain a t NF 6.5 dB @ 18 GHz
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D-1503
D-1503
2285C
S3V 83
S3V 75
S3V 05
S3V 77
Litton LN-200
S3V 09
R/S3V 92
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D2502
Abstract: No abstract text available
Text: U lH ’ON IN D /L IT TO N SOLID il I I A I I I 5bE D • 5 5 4 4 2 0 0 DGDD5GÛ DES ■ L I T T Low Noise/Medium Power Microwave G aA s FET Electron Devices D-2502 Preliminary Specifications -380- FEATURES ■ -250► 40 - Noise Figure 2.2 de @ 8 [77777 ghz
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D-2502
IT777JlY///h77mh
D-2502
2285C
D2502
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L4945A
Abstract: L-4945A litton thyratron tube operation thyratron 1000423 Litton Electron Devices
Text: Litton_ Electron Devices 103S Westminster Ori«« W liam tport. Pennsy»varia 17701 Phone: 717 33*9561 Fax: (717) 33B-28Û3 DATA SHEET THYRATRON TYPE L -49 45A DEUTERIUM, CERAMIC-METAL, TETRODE WITH GRADIENT GRID DESCRIPTION The L-4945A is a ceramic-metal, double-gap, ter rode# deuterium thyratron.
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L-4945A
25-20unc-2a
164-32unc-2a
L4945A
litton
thyratron tube operation
thyratron
1000423
Litton Electron Devices
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