CMBT2369
Abstract: np TRANSISTOR smd SOT23
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT2369 SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR N–P N transistor Marking CMBT2369 = lJ PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration
|
Original
|
PDF
|
ISO/TS16949
OT-23
CMBT2369
C-120
CMBT2369
np TRANSISTOR smd SOT23
|
np TRANSISTOR smd SOT23
Abstract: smd transistor marking np CMBT2369
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT2369 SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR N–P N transistor Marking CMBT2369 = lJ PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm
|
Original
|
PDF
|
OT-23
CMBT2369
C-120
np TRANSISTOR smd SOT23
smd transistor marking np
CMBT2369
|
DRA2144V0L
Abstract: No abstract text available
Text: DRA2144V Silicon PNP epitaxial planar type For digital circuits Complementary to DRC2144V Unit: mm • Features Low collector-emitter saturation voltage VCE sat Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: LJ
|
Original
|
PDF
|
DRA2144V
DRC2144V
UL-94
DRA2144V0L
SC-59A
O-236ts.
|
BFR35AP
Abstract: No abstract text available
Text: , Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BFR35AP Silicon NPN RF Transistor DESCRIPTION • Low Noise Figure NF = 1.8 dB TYP. @VCE = 6 V, lc = 2 mA, f = 900 MHz • High Gain I S21e I 2 = 12.5 dB TYP. @VCE= 8 V,lc = 15 mA,f = 900 MHz
|
Original
|
PDF
|
BFR35AP
500MHz
900MHz
BFR35AP
|
Untitled
Abstract: No abstract text available
Text: £/ ne. ,O I TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (973) 376-8960 MMBR920L Silicon NPN RF Transistor DESCRIPTION • Low Noise NF= 2.4dB TYP. @ f= 500MHz • High Gain SOT- 2 3 package I Gpe= 15dB TYP. @ f= 500MHz
|
Original
|
PDF
|
MMBR920L
500MHz
|
npn, transistor, sc 107 b
Abstract: 2sc low noise NF TRANSISTOR
Text: 2SC3838K 2SC4083 Transistor, NPN Features Dimensions Units : mm • • available in SMT3 (SMT, SC-59) and UMT3 (UMT, SC-70) packages 2SC3838K (SMT3) package marking: JO — 2SC3838K; AD^, where ★ is hFE code Lj — 2SC4083; 1D-*, where ★ is hFE code
|
OCR Scan
|
PDF
|
2SC3838K
2SC4083
SC-59)
SC-70)
2SC3838K;
2SC4083;
2SC3838K
2SC40
2SC3838K,
2SC4083
npn, transistor, sc 107 b
2sc low noise
NF TRANSISTOR
|
XWs transistor
Abstract: xws 03
Text: SIEMENS BCR 505 NPN Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor R-|=2.2k£i, R2=10ki2 R HJ LJ Type Marking Ordering Code BCR 505 XWs Pin Configuration Q62702-C2354 1= B Package 2=E 3=C
|
OCR Scan
|
PDF
|
10ki2)
Q62702-C2354
OT-23
XWs transistor
xws 03
|
bf579
Abstract: No abstract text available
Text: SIEM EN S PNP Silicon RF Transistor BF 579 • For low-distortion, low-noise VHF/UHF amplifier and UHF oscillator applications in TV tuners • Typical collector current 10 mA Type Marking Ordering Code tape and reel BF 579 LJ Q62702-F971 Pin Co nfigural ion
|
OCR Scan
|
PDF
|
Q62702-F971
OT-23
0B3Sb05
B235b05
bf579
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA HN1K02FU TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE HN1 K02FU Unit in mm HIGH SPEED SWITCHING APPLICATIONS 2 . 1 ± 0.1 ANALOG SWITCH APPLICATIONS 1. 2 5 + 0.1 *1 e- 2.5 Volts Gate Drive. Low Threshold Voltage : Vth = 0.5~1.5V High Speed
|
OCR Scan
|
PDF
|
HN1K02FU
K02FU
10//S
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA TPC8402 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N, P CHANNEL MOS TYPE tt-MOSVI / U-MOS H TPC8402 LITHIUM ION SECONDARY BATTERY NOTE BOOK PC INDUSTRIAL APPLICATIONS U nit in mm PORTABLE DEVICES SOP-8 • nn n Low Drain-Source ON Resistance • P fTRAlNnVTFJ,
|
OCR Scan
|
PDF
|
TPC8402
|
w1p npn
Abstract: SOT23 W1P SOT-23 marking r1p SMD MARKING CODE v3p SMD sot23 marking E6 w1p 60 "W1P" w1p 73 MARKING W1P SMD W1P
Text: 11 W id eb an d SMD Transistors Wideband SMD® Transistors Description Mechanical Data Philips Components wideband transistors are the result of leading-edge technology dedicated to expanding perfor mance and selection in the wideband arena. The devices are
|
OCR Scan
|
PDF
|
OT-223
priFS17
BFS17A
BFT25
BFT92
BFT93
OT-23
OT-89
OT-143
OT-223
w1p npn
SOT23 W1P
SOT-23 marking r1p
SMD MARKING CODE v3p
SMD sot23 marking E6
w1p 60
"W1P"
w1p 73
MARKING W1P
SMD W1P
|
2SA1669
Abstract: S121 transistor 2S D 716 marking BS
Text: O rd e rin g n u m b e r: EN 2972 _ 2 S A 1 6 6 9 PNP Epitaxial P lanar Silicon Transistor High-Frequency Amp Applications F e a tu re s •High cutoff frequency : fx = 3.0GHz typ ■High power gain : MAG= 11 dB typ f=0.9GHz ■Small noise figure
|
OCR Scan
|
PDF
|
2SA1669
2SA1669
S121
transistor 2S D 716
marking BS
|
2SK2602
Abstract: SC-65
Text: TOSHIBA 2SK2602 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2602 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS SWITCHING REGULATOR APPLICATIONS • Low Drain-Sorce ON Resistance : R d S (O N )“ 0.9O (Typ.)
|
OCR Scan
|
PDF
|
2SK2602
2SK2602
SC-65
|
bc238c
Abstract: mosfet marking code AL sot-23 S-691
Text: TELEFUNKEN ELECTRONIC file D m ÛSSOCHb 0 D0 5 4 2 Ô fi • AL GG S 691 T filLilFyKlKiKl electronic Creative Technologies - 7 ^ 3 / - / 9 Silicon NPN Planar RF Transistor Applications: RF amplifier up to GHz range specially for wide band antenna amplifier
|
OCR Scan
|
PDF
|
569-GS
bc238c
mosfet marking code AL sot-23
S-691
|
|
|
BCW31
Abstract: BCW32
Text: SEMICONDUCTOR TECHNICAL DATA BCW31/32 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Complementary to BCW29/30 MAXIMUM RATINGS Ta=25°C CHARACTERISTIC UNIT SYMBOL RATING Collector-Base Voltage V CBO 30 V
|
OCR Scan
|
PDF
|
W31/32
BCW29/30
10j/A
10juA
BCW31
BCW32
BCW32
|
transistor marking zg
Abstract: npn Epitaxial Silicon zg 0118 transistor 538 NPN transistor LC marking code transistor
Text: Central” CMXT2222A Semiconductor Corp. SURFACE MOUNT DUAL NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXT2222A type is a dual NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a sur face mount package, designed for small signal general
|
OCR Scan
|
PDF
|
CMXT2222A
OT-26
150mA,
15nnA
OT-26
06-January
transistor marking zg
npn Epitaxial Silicon zg
0118 transistor
538 NPN transistor
LC marking code transistor
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC4207 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC42Q7 Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. + 0.2 2.8 '0 .3 Small Package (Dual Type) High Voltage and High current : VCEO = 50V, I c = 150mA (Max.)
|
OCR Scan
|
PDF
|
2SC4207
2SC42Q7
150mA
2SA1618
961001EAA2'
|
transistor 6Cp
Abstract: bc817 6Bp transistor transistor 6bp 6Cp transistor marking 6ap General Purpose Transistors bc817 6Bp bc818 marking code 6Cp
Text: DISCRETE SEMICONDUCTORS Æm ülnlEET BC817; BC818 NPN general purpose transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors 1997 Mar 12 PHILIPS Philips Semiconductors Product specification
|
OCR Scan
|
PDF
|
BC817;
BC818
BC807
BC808.
BC817
BC817-16
BC817-25
BC817-40
transistor 6Cp
6Bp transistor
transistor 6bp
6Cp transistor
marking 6ap
General Purpose Transistors
bc817 6Bp
bc818
marking code 6Cp
|
marking LJ
Abstract: BF579 60n4
Text: PNP Silicon RF Transistor • • BF 579 Suitable for low distortion, low noise VHF/UHF amplifier and UHF oscillator applications in TV tuners High transition frequency of 1.6 GHz at typical operating current of 10 mA Type Marking Ordering code for versions in bulk
|
OCR Scan
|
PDF
|
Q62702-F552
Q62702-F971
marking LJ
BF579
60n4
|
transistor WL 431
Abstract: 2N700A BUV pnp 50a MW1131
Text: M IL-S-19500/123A EL 12 Decokber 1966 SUPERSEDING MIL -S—19500/123(SigC) 1 July 1960 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR PNP, GERMANIUM TYPE 2N700A 1. SCOPE 1.1 Scope. - This specification coveKthe detail requirements for a germanium, PNP,
|
OCR Scan
|
PDF
|
MIL-S-19500/123A
-S-19500/123
2N700A
-65to
70MHz
5961-A085
transistor WL 431
2N700A
BUV pnp 50a
MW1131
|
marking NC sot23
Abstract: smd code marking sot23 RF Transistors sot-23 marking code LA SMD sot-23 MARKING CODE N C SMD MARKING CODE FEW SMD Transistors nc SOT SMD IC smd code marking 3 1 sot23 BF579
Text: HIGH FREQUENCY SMD TRANSISTORS DESCRIPTION •Philips Components high-frequency transistors fill the gap between general purpose transistors and broadband transistors by offering transition frequencies from a few hundred megahertz to about 1 gigahertz. Applications
|
OCR Scan
|
PDF
|
OT-23
BFS18
BFS19
BFS20
BF840
BF841
BF579
BF536
BF767
BF824
marking NC sot23
smd code marking sot23
RF Transistors sot-23
marking code LA SMD
sot-23 MARKING CODE N C
SMD MARKING CODE FEW
SMD Transistors nc
SOT SMD IC
smd code marking 3 1 sot23
|
143-E
Abstract: D143EK H200
Text: DTD143EK Digital transistor, NPN, with 2 resistors Features Dimensions Units : mm available in an SMT3 (SMT, SC-59) package DTD143EK (SMT3) package marking: DTD143EK; F23 a built-in bias resistor allows inverter circuit configuration without external input resistors
|
OCR Scan
|
PDF
|
DTD143EK
SC-59)
DTD143EK;
DTD143EK
143-E
D143EK
H200
|
Untitled
Abstract: No abstract text available
Text: DTB113EK Digital transistor, PNP, with 2 resistors Features Dimensions Units : mm available in an SMT3 (SMT, SC-59) package package marking: DTB113EK; F11 a built-in bias resistor allows inverter circuit configuration without external input resistors DTB113EK (SMT3)
|
OCR Scan
|
PDF
|
DTB113EK
SC-59)
DTB113EK;
DTB113EK
|
Untitled
Abstract: No abstract text available
Text: 32E D • Ö53b320 PNP Silicon RF Transistor Q01b744 S «SIP BF 579 SIEMENS/ SPCLi SEMICONDS r - 3 i- 1 7 • Suitable for low distortion, low noise VHF/U HF amplifier and UHF oscillator applications in TV tuners • High transition frequency of 1.6 GHz at typical operating current of 10 mA
|
OCR Scan
|
PDF
|
53b320
Q01b744
Q62702-F552
Q62702-F971
20base
A23b320
QGlb74b
|
