Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    LLQ2021 Search Results

    LLQ2021 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    NESG260234

    Abstract: LLQ2021 NESG260234-T1 NESG260234-T1-AZ
    Text: データ・シート NPN シリコンゲルマニウム RF トランジスタ NPN Silicon Germanium RF Transistor NESG260234 NPN SiGe RF トランジスタ 中出力増幅用(1 W) 3 ピン・パワー・ミニモールド(34 PKG) 特 徴 ○中出力・高利得増幅用途および低ひずみ・低雑音・高利得増幅用途に最適


    Original
    NESG260234 NESG260234-AZ NESG260234-T1 NESG260234-T1-AZ PU10547JJ02V0DS LLQ2021 NESG260234 LLQ2021 NESG260234-T1-AZ PDF

    1005 Ic Data

    Abstract: NESG260234 IC MARKING 1005 1005 TRANSISTOR
    Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG260234 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 1 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (1 W) amplification Pout = 30 dBm TYP. @ VCE = 6 V, Pin = 15 dBm, f = 460 MHz


    Original
    NESG260234 NESG260234 NESG260234-AZ NESG260234-T1 NESG260234-T1-AZ PU10547EJ02V0DS LLQ2021 1005 Ic Data IC MARKING 1005 1005 TRANSISTOR PDF

    NESG260234

    Abstract: LLQ2021 NESG260234-T1 NESG260234-T1-AZ
    Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG260234 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 1 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (1 W) amplification Pout = 30 dBm TYP. @ VCE = 6 V, Pin = 15 dBm, f = 460 MHz


    Original
    NESG260234 NESG260234-AZ NESG260234-T1 NESG260234 LLQ2021 NESG260234-T1 NESG260234-T1-AZ PDF

    NESG260234

    Abstract: LLQ2021 NESG260234-T1 NESG260234-T1-AZ
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    NESG260234

    Abstract: LLQ2021 NESG260234-T1 NESG260234-T1-AZ
    Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG260234 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 1 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (1 W) amplification Pout = 30 dBm TYP. @ VCE = 6 V, Pin = 15 dBm, f = 460 MHz


    Original
    NESG260234 NESG260234-AZ NESG260234-T1 NESG260234 LLQ2021 NESG260234-T1 NESG260234-T1-AZ PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF