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    LM 35 IC Search Results

    LM 35 IC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL1G07FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    LM 35 IC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LTW5SN

    Abstract: LCD TV SCHEMA em 513 diode IC HX 710
    Text: Platinum DRAGON Lead Pb Free Product - RoHS Compliant LD W5SN, LB W5SN, LT W5SN Released Besondere Merkmale Features • Gehäusetyp: weißes SMD-Gehäuse, farbloser klarer Silikon - Verguss • Typischer Lichtfluss: 540 mW (tief blau); 35 lm (blau); 92 lm (true grün)


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    PL580-3X

    Abstract: PL580-35 PL580-37 PL580-38 PL580-39
    Text: Preliminary PL580-35/37/38/39 38MHz-320MHz Low Phase Noise VCXO FEATURES 16 SEL0^ XIN 2 15 SEL1^ XOUT 3 14 GNDBUF SEL2^ 4 13 QBAR OE_CTRL 5 12 VDDBUF VCON 6 11 Q GNDANA 7 10 GNDBUF LP 8 9 LM OE_CTRL 15 VCON 16 SEL1^ 14 SEL0^ SEL2^ 11 10 9 PL580-3X 1 2 3


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    PDF PL580-35/37/38/39 38MHz-320MHz PL580-3X PL580-3X 320MHz. PL580-35 PL580-37 PL580-38 PL580-39

    LM35

    Abstract: PICAL
    Text: 2. 0 l LM 35 TEM PERATURE ERROR °C 1.5 ppPR 1. 0 0.5 -LM 3 5 A t T Y P IC A L - 0 .5 ^ . ‘ LM 35 A - 1. 0 • fc - 1 .5 LM 35 - 2.0 -7 5 -2 5 25 75 T E M P ER A T U R E (°C ) 125 175


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    PDF -LM35/S LM35 PICAL

    Untitled

    Abstract: No abstract text available
    Text: LMU08/8U 8 x 8-bit Parallel Multiplier DEVICES INCORPORATED 1 FEATURES DESCRIPTION □ 35 ns W orst-C ase M u ltiply Tim e □ Low P ow er C M O S Technology □ LM U 08 R ep laces TR W TM C 208K □ LM U 8U R eplaces T R W T M C 28K U □ T w o 's C om plem ent LM U 08 , or


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    PDF LMU08/8U LMU08/8U LMU8UPC70 LMU8UPC50 LMU8UPC35 LMU8UJC70 LMU8UJC50 LMU8UJC35 MIL-STD-883 LMU8UCMB90

    Untitled

    Abstract: No abstract text available
    Text: Preview llllnllll H W lM S September 1989 HM 65795 DATA SHEET_ 64 K x 4 WITH SEPARATE I/O HIGH SPEED CMOS SRAM FEATURES . FAST ACCESS TIME INDUSTRIAL/MILITARY : 35/45/55 ns max COMMERCIAL : 25/35/45/55 ns (max) . LOW POWER CONSUMPTION ACTIVE :


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    PDF HM-65795

    Untitled

    Abstract: No abstract text available
    Text: LM lH ft .vii m LMU18 16 x 16-bit Parallel Multiplier DEVICES INCORPORATED DESCRIPTION FEATURES □ 35 ns W orst-Case M ultiply Time □ Low Power CMOS Technology □ Full 32-bit Output Port — No M ultiplexing Required □ Tw o's Complement, Unsigned, or


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    PDF LMU18 16-bit 32-bit LMU18 84-pin 32-bit LMU18GC65

    MPY12HJ

    Abstract: No abstract text available
    Text: LM U12 1 2 x 1 2-bit Parallel Multiplier Features Description_ □ 35 ns worst-case multiply time The LMU12 is a 12-bit parallel multiplier with high speed and low power consumption. It is pin and functionally compatible with TRW MPY12HJ devices. Full military


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    PDF LMU12 12-bit MPY12HJ MPY12HJ 24-bit

    Untitled

    Abstract: No abstract text available
    Text: SSbS^G5 aODl^EH 4b2 « L D I LMU08/8U 8 x 8-bit Parallel Multiplier DEVICES INCORPORATED FEATURES □ 35 ns W orst-C ase M ultiply Tim e □ Low Pow er C M O S T echnology □ L M U 08 R eplaces T R W T M C 208K □ LM U 8U R eplaces T R W TM C 28K U □ T w o’s C om plem ent LM U 08 , or


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    PDF LMU08/8U 40-pin 44-pin LMU8UJC70 LMU8UJC50 LMU8UJC35 LMU8UKC70

    Untitled

    Abstract: No abstract text available
    Text: FLM5964-35DA m lm i I r UJ11jU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 45.5dBm Typ. High Gain: G ^ b = 7.0dB (Typ.) High PAE: r iadd = 35% (Typ.) Low IM3 = -45dBc@Po = 34.5dBm Broad Band: 5.9 ~ 6.4GHz


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    PDF FLM5964-35DA UJ11jU -45dBc MA078

    ELEKTOR

    Abstract: 9434 LM 311 IC LM311 SG311 LM 311 DSAGER00037 ic lm311
    Text: E le k to r Januar 19 76 — 1-35 E le k to r IC -K artei LM311 elektor IC-Kartei o LM 311 Komparator Übereinstimmende Anschlüsse Kennbuch-_§tabe Gehäuse -——_ TO-99 Flat Package TO-91 Mini-DIP (8 pins) D IL (14 Dins) (TO-116) A 3 3 3 4 B 2 2 2


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    PDF LM311 O-116) ELEKTOR 9434 LM 311 IC LM311 SG311 LM 311 DSAGER00037 ic lm311

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON S D 1 5 3 0 -0 8 iE J lÊ ÏÏIM lM RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS 40 WATTS typ. IFF 1030 - 1090 MHz 35 WATTS (min.) DME 1025 - 1150 MHz 25 WATTS (typ.) TACAN 960 - 1215 MHz


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    PDF SD1530-08 SD1530-08

    Untitled

    Abstract: No abstract text available
    Text: HM621100A Series 1 048576-w ord x 1-bit High S p eed C M O S S tatic RAM Ordering Information T he H itach i H M 621100A is a high speed lM Static RAM organized as 1048576-word x 1-bit. It realizes high speed access time 20/25/35 ns and low p o w e r c o n s u m p tio n , e m p lo y in g C M O S


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    PDF HM621100A 048576-w 21100A 1048576-word 32-bit 21100A, 400-m HM621100AP-20 ----------------------------HM621100AP-25

    Untitled

    Abstract: No abstract text available
    Text: LMU18 16 x 16-bit Parallel Multiplier FEATURES DESCRIPTION T h e LM U18 is a h ig h -sp e e d , low p o w e r 1 6 -b it p a ra lle l m u ltip lie r. T h e L M U 1 8 is an 8 4 -p in d e v ic e w h ich J 35 n s W o rs t-C a s e M u ltip ly T im e U L o w P o w e r C M O S T e c h n o lo g y


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    PDF LMU18 16-bit LMU18GC65 LMU18GC45 LMU18GC35 LMU18GM75 LMU18GM55 LMU18GM45 MIL-STD-883 LMU18GMB75

    SD-1 diode

    Abstract: sd 150 zener diode
    Text: s o 00 3> Continued from preceding page. -C O Classified by package and arranged in order of increasing Vq j o I(\ Absolute Maximum Ratings/Ta=25“C Case Applications VCBO VCBO VEBO IC [V] [V] [V] [A] PC I Ij VCB *TC=25*C [•C] [V] [W] ICEO (max [A] fT


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    PDF 250im2x0. T0220 T03PB I03PB T03FB T03PB I03FB SD-1 diode sd 150 zener diode

    Untitled

    Abstract: No abstract text available
    Text: fax id: 5413 CYPRESS CY7C4255 CY7C4265 PRELIMINARY 8K/16Kx18 Deep Sync FIFOs Features H ig h -s p e ed , low -pow er, first-in firs t-o u t F IF O m e m o ries 8 K x 18 (C Y 7 C 42 55 ) 16K x 18 (C Y 7 C 42 65 ) 0.5 m icro n C M O S fo r o p tim u m sp ee d /p o w e r


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    PDF CY7C4255 CY7C4265 8K/16Kx18

    Untitled

    Abstract: No abstract text available
    Text: fax id: 5416 W CYPRESS PRELIMINARY 32K/64Kx18 1 Meg Deep Sync FIFOs Functional Description Features • H ig h-speed , low -pow er, first-in firs t-o u t F IF O m em o ries • 32K x 18 (C Y 7 C 42 75 ) • 64K x 18 (C Y 7 C 42 85 ) • 0.5 m icron C M O S fo r o p tim u m sp ee d /p o w e r


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    PDF 32K/64Kx18

    Untitled

    Abstract: No abstract text available
    Text: fax id: 5413 CY7C4255 CY7C4265 3F CYPRESS 8K/16Kx18 Deep Sync FIFOs Features • H ig h-speed , low -pow er, first-in firs t-o u t F IF O m em o ries • 8K x 18 (C Y 7 C 42 55 ) • 16K x 18 (C Y 7 C 42 65 ) • 0.5 m icron C M O S fo r o p tim u m sp ee d /p o w e r


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    PDF CY7C4255 CY7C4265 8K/16Kx18

    6520-600D

    Abstract: lm diode
    Text: m ico« COAXIAL PIN DIODE SWITCH MLM 6520-600D Series SP6T NON-REFLECTIVE SWITCH WITH TTL COMPATIBLE DRIVER 0.5 TO 18.0 GHz FEATURES ♦ Broad Frequency Ranges ♦ Miniature Outline ♦ Removable Connectors ♦ Hermetically Sealed ♦ TTL Compatible DESCRIPTION


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    PDF 6520-600D lm diode

    N2219

    Abstract: 2N2453 2N2243 Hirel 2N1991 2N1937 2N2060 2N2102 2N2192 2N2192A
    Text: 37E D SEtlELAB l t d 6133167 0000013 0 ISMLB 7=27- 0 / T-Jl-Ol Type No. Reliability Polarity Option Package V^e o ic cont hFE@ VCE/*C *T Pd 2N1937 2N1991 2N2060 2N2102 .2N2192 HI-REL SCREEN HI-REL HI-REL HI-REL NPN PNP PNP NPN NPN T063 T039 T077 T039 T039


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    PDF 133ia? 00Q13 2N1937 2N1991 2N2060 5/10m 2N2102 35min 10/10m 2N2192 N2219 2N2453 2N2243 Hirel 2N2192A

    7W00F

    Abstract: 7S00F tunnel oven
    Text: [3j 1. External and Internal Structure The drawings in Figure 3-1 show the external designs and internal structures o f various series m odels. The IC chip is set on the "bed" at the center o f the pack­ age. Wire leads connect the IC chip terminals to the lead frame. The package


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    PDF 7S00F 7W00F tunnel oven

    Untitled

    Abstract: No abstract text available
    Text: Product Description SP-2030 Stanford M icrodevices offers a high-perform ance LDMOS Transistor designed for base station applications in the 0.5 to 2.8 GHz frequency range. This novel Peak LDMOS has been optimized for high peak to average power in a compact, power flanged ceram ic package. Ideal for CDMA,


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    PDF SP-2030 -31dBc MMBTA64, OT-23 SP-2030

    HA-2650

    Abstract: H12-200 MC1554 teledyne philbrick sl 1489a HA-2000 HA-2000A HA-2050A ram 2111 signetics HA-2060A
    Text: HARRIS OPERATIONAL AMPLIFIERS Selection Guide for Military Applications -5 5 °C to +125°C PARAM ETER* F.E.T. PREAMP HA-2000 HA-2000A HA-205O HA-909 S/H ?r a m HA-2060A HA-2400 HA-2420 HA-2050A HA-2060 HA-2500 HA-2502 HA-2510 HA-2512 UNITS INPUT C H A R A C TE R IST IC S


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    PDF HA-909 HA-205O HA-2050A HA-2060 HA-2060A HA-2500 HA-2502 HA-2510 HA-2512 HA-2000 HA-2650 H12-200 MC1554 teledyne philbrick sl 1489a HA-2000A ram 2111 signetics HA-2060A

    55199

    Abstract: 55199 semiconductor lm38s LM185 LM185-25 LM385-2 LM 2480 na
    Text: Semiconductor LM185-2.5/LM285-2.5/LM385-2.5 Micropower Voltage Reference Diode General Description T h e LM 18 5 -2 .5 /L M 28 5 -2 .5 /L M 3 85 -2 .5 are m icropow er 2term inal band-gap voltage regulator diodes. Operating over a 20 ju.A to 20 m A current range, they feature exceptionally


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    PDF LM185-2 5/LM285-2 5/LM385-2 LM-185-2 LM334 tl/h/5519â 55199 55199 semiconductor lm38s LM185 LM185-25 LM385-2 LM 2480 na

    XC-554-R

    Abstract: NSM3914 NSM4000A XC-556-R NSM3915 XC-55-PC nsm1416 NSM-1416 NSM4000 nsm39148
    Text: Z o iA a. evi C CUj OS II e o c o ^ "'3 '^ '^ r^ -^ '^ r'» -^ '^ -« 3 -T i-^ -^ i-in in i'« -r''r'-C M e M C \ic \je \ic M C M e \ic N C M C \jc N c v jc M e M C M C M c \jc o o o c o e o o o e o c o o o e o o o c o e o e o c o e o o o c b c ò '-'-’- ’- T - ' - T - i - T - i - i - T - i - i - T - i - i n i n n M M n w w w n e o c o e o m w w c o w n n n n w c o n n c o n n w c o w n n M c o n m M c o c o '


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    PDF nsl6154 mv5154 nsl6252 mv5252 nsl6253 mv5253 nsl6254 mv5254 nsl6352 mv5352 XC-554-R NSM3914 NSM4000A XC-556-R NSM3915 XC-55-PC nsm1416 NSM-1416 NSM4000 nsm39148