LTW5SN
Abstract: LCD TV SCHEMA em 513 diode IC HX 710
Text: Platinum DRAGON Lead Pb Free Product - RoHS Compliant LD W5SN, LB W5SN, LT W5SN Released Besondere Merkmale Features • Gehäusetyp: weißes SMD-Gehäuse, farbloser klarer Silikon - Verguss • Typischer Lichtfluss: 540 mW (tief blau); 35 lm (blau); 92 lm (true grün)
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PL580-3X
Abstract: PL580-35 PL580-37 PL580-38 PL580-39
Text: Preliminary PL580-35/37/38/39 38MHz-320MHz Low Phase Noise VCXO FEATURES 16 SEL0^ XIN 2 15 SEL1^ XOUT 3 14 GNDBUF SEL2^ 4 13 QBAR OE_CTRL 5 12 VDDBUF VCON 6 11 Q GNDANA 7 10 GNDBUF LP 8 9 LM OE_CTRL 15 VCON 16 SEL1^ 14 SEL0^ SEL2^ 11 10 9 PL580-3X 1 2 3
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PL580-35/37/38/39
38MHz-320MHz
PL580-3X
PL580-3X
320MHz.
PL580-35
PL580-37
PL580-38
PL580-39
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LM35
Abstract: PICAL
Text: 2. 0 l LM 35 TEM PERATURE ERROR °C 1.5 ppPR 1. 0 0.5 -LM 3 5 A t T Y P IC A L - 0 .5 ^ . ‘ LM 35 A - 1. 0 • fc - 1 .5 LM 35 - 2.0 -7 5 -2 5 25 75 T E M P ER A T U R E (°C ) 125 175
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-LM35/S
LM35
PICAL
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Untitled
Abstract: No abstract text available
Text: LMU08/8U 8 x 8-bit Parallel Multiplier DEVICES INCORPORATED 1 FEATURES DESCRIPTION □ 35 ns W orst-C ase M u ltiply Tim e □ Low P ow er C M O S Technology □ LM U 08 R ep laces TR W TM C 208K □ LM U 8U R eplaces T R W T M C 28K U □ T w o 's C om plem ent LM U 08 , or
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LMU08/8U
LMU08/8U
LMU8UPC70
LMU8UPC50
LMU8UPC35
LMU8UJC70
LMU8UJC50
LMU8UJC35
MIL-STD-883
LMU8UCMB90
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Untitled
Abstract: No abstract text available
Text: Preview llllnllll H W lM S September 1989 HM 65795 DATA SHEET_ 64 K x 4 WITH SEPARATE I/O HIGH SPEED CMOS SRAM FEATURES . FAST ACCESS TIME INDUSTRIAL/MILITARY : 35/45/55 ns max COMMERCIAL : 25/35/45/55 ns (max) . LOW POWER CONSUMPTION ACTIVE :
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HM-65795
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Untitled
Abstract: No abstract text available
Text: LM lH ft .vii m LMU18 16 x 16-bit Parallel Multiplier DEVICES INCORPORATED DESCRIPTION FEATURES □ 35 ns W orst-Case M ultiply Time □ Low Power CMOS Technology □ Full 32-bit Output Port — No M ultiplexing Required □ Tw o's Complement, Unsigned, or
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LMU18
16-bit
32-bit
LMU18
84-pin
32-bit
LMU18GC65
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MPY12HJ
Abstract: No abstract text available
Text: LM U12 1 2 x 1 2-bit Parallel Multiplier Features Description_ □ 35 ns worst-case multiply time The LMU12 is a 12-bit parallel multiplier with high speed and low power consumption. It is pin and functionally compatible with TRW MPY12HJ devices. Full military
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LMU12
12-bit
MPY12HJ
MPY12HJ
24-bit
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Untitled
Abstract: No abstract text available
Text: SSbS^G5 aODl^EH 4b2 « L D I LMU08/8U 8 x 8-bit Parallel Multiplier DEVICES INCORPORATED FEATURES □ 35 ns W orst-C ase M ultiply Tim e □ Low Pow er C M O S T echnology □ L M U 08 R eplaces T R W T M C 208K □ LM U 8U R eplaces T R W TM C 28K U □ T w o’s C om plem ent LM U 08 , or
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LMU08/8U
40-pin
44-pin
LMU8UJC70
LMU8UJC50
LMU8UJC35
LMU8UKC70
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Untitled
Abstract: No abstract text available
Text: FLM5964-35DA m lm i I r UJ11jU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 45.5dBm Typ. High Gain: G ^ b = 7.0dB (Typ.) High PAE: r iadd = 35% (Typ.) Low IM3 = -45dBc@Po = 34.5dBm Broad Band: 5.9 ~ 6.4GHz
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FLM5964-35DA
UJ11jU
-45dBc
MA078
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ELEKTOR
Abstract: 9434 LM 311 IC LM311 SG311 LM 311 DSAGER00037 ic lm311
Text: E le k to r Januar 19 76 — 1-35 E le k to r IC -K artei LM311 elektor IC-Kartei o LM 311 Komparator Übereinstimmende Anschlüsse Kennbuch-_§tabe Gehäuse -——_ TO-99 Flat Package TO-91 Mini-DIP (8 pins) D IL (14 Dins) (TO-116) A 3 3 3 4 B 2 2 2
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LM311
O-116)
ELEKTOR
9434
LM 311 IC
LM311
SG311
LM 311
DSAGER00037
ic lm311
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON S D 1 5 3 0 -0 8 iE J lÊ ÏÏIM lM RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS 40 WATTS typ. IFF 1030 - 1090 MHz 35 WATTS (min.) DME 1025 - 1150 MHz 25 WATTS (typ.) TACAN 960 - 1215 MHz
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SD1530-08
SD1530-08
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Untitled
Abstract: No abstract text available
Text: HM621100A Series 1 048576-w ord x 1-bit High S p eed C M O S S tatic RAM Ordering Information T he H itach i H M 621100A is a high speed lM Static RAM organized as 1048576-word x 1-bit. It realizes high speed access time 20/25/35 ns and low p o w e r c o n s u m p tio n , e m p lo y in g C M O S
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HM621100A
048576-w
21100A
1048576-word
32-bit
21100A,
400-m
HM621100AP-20
----------------------------HM621100AP-25
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Untitled
Abstract: No abstract text available
Text: LMU18 16 x 16-bit Parallel Multiplier FEATURES DESCRIPTION T h e LM U18 is a h ig h -sp e e d , low p o w e r 1 6 -b it p a ra lle l m u ltip lie r. T h e L M U 1 8 is an 8 4 -p in d e v ic e w h ich J 35 n s W o rs t-C a s e M u ltip ly T im e U L o w P o w e r C M O S T e c h n o lo g y
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LMU18
16-bit
LMU18GC65
LMU18GC45
LMU18GC35
LMU18GM75
LMU18GM55
LMU18GM45
MIL-STD-883
LMU18GMB75
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SD-1 diode
Abstract: sd 150 zener diode
Text: s o 00 3> Continued from preceding page. -C O Classified by package and arranged in order of increasing Vq j o I(\ Absolute Maximum Ratings/Ta=25“C Case Applications VCBO VCBO VEBO IC [V] [V] [V] [A] PC I Ij VCB *TC=25*C [•C] [V] [W] ICEO (max [A] fT
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250im2x0.
T0220
T03PB
I03PB
T03FB
T03PB
I03FB
SD-1 diode
sd 150 zener diode
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Untitled
Abstract: No abstract text available
Text: fax id: 5413 CYPRESS CY7C4255 CY7C4265 PRELIMINARY 8K/16Kx18 Deep Sync FIFOs Features H ig h -s p e ed , low -pow er, first-in firs t-o u t F IF O m e m o ries 8 K x 18 (C Y 7 C 42 55 ) 16K x 18 (C Y 7 C 42 65 ) 0.5 m icro n C M O S fo r o p tim u m sp ee d /p o w e r
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CY7C4255
CY7C4265
8K/16Kx18
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Untitled
Abstract: No abstract text available
Text: fax id: 5416 W CYPRESS PRELIMINARY 32K/64Kx18 1 Meg Deep Sync FIFOs Functional Description Features • H ig h-speed , low -pow er, first-in firs t-o u t F IF O m em o ries • 32K x 18 (C Y 7 C 42 75 ) • 64K x 18 (C Y 7 C 42 85 ) • 0.5 m icron C M O S fo r o p tim u m sp ee d /p o w e r
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32K/64Kx18
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Untitled
Abstract: No abstract text available
Text: fax id: 5413 CY7C4255 CY7C4265 3F CYPRESS 8K/16Kx18 Deep Sync FIFOs Features • H ig h-speed , low -pow er, first-in firs t-o u t F IF O m em o ries • 8K x 18 (C Y 7 C 42 55 ) • 16K x 18 (C Y 7 C 42 65 ) • 0.5 m icron C M O S fo r o p tim u m sp ee d /p o w e r
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CY7C4255
CY7C4265
8K/16Kx18
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6520-600D
Abstract: lm diode
Text: m ico« COAXIAL PIN DIODE SWITCH MLM 6520-600D Series SP6T NON-REFLECTIVE SWITCH WITH TTL COMPATIBLE DRIVER 0.5 TO 18.0 GHz FEATURES ♦ Broad Frequency Ranges ♦ Miniature Outline ♦ Removable Connectors ♦ Hermetically Sealed ♦ TTL Compatible DESCRIPTION
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6520-600D
lm diode
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N2219
Abstract: 2N2453 2N2243 Hirel 2N1991 2N1937 2N2060 2N2102 2N2192 2N2192A
Text: 37E D SEtlELAB l t d 6133167 0000013 0 ISMLB 7=27- 0 / T-Jl-Ol Type No. Reliability Polarity Option Package V^e o ic cont hFE@ VCE/*C *T Pd 2N1937 2N1991 2N2060 2N2102 .2N2192 HI-REL SCREEN HI-REL HI-REL HI-REL NPN PNP PNP NPN NPN T063 T039 T077 T039 T039
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133ia?
00Q13
2N1937
2N1991
2N2060
5/10m
2N2102
35min
10/10m
2N2192
N2219
2N2453
2N2243
Hirel
2N2192A
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7W00F
Abstract: 7S00F tunnel oven
Text: [3j 1. External and Internal Structure The drawings in Figure 3-1 show the external designs and internal structures o f various series m odels. The IC chip is set on the "bed" at the center o f the pack age. Wire leads connect the IC chip terminals to the lead frame. The package
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7S00F
7W00F
tunnel oven
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Untitled
Abstract: No abstract text available
Text: Product Description SP-2030 Stanford M icrodevices offers a high-perform ance LDMOS Transistor designed for base station applications in the 0.5 to 2.8 GHz frequency range. This novel Peak LDMOS has been optimized for high peak to average power in a compact, power flanged ceram ic package. Ideal for CDMA,
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SP-2030
-31dBc
MMBTA64,
OT-23
SP-2030
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HA-2650
Abstract: H12-200 MC1554 teledyne philbrick sl 1489a HA-2000 HA-2000A HA-2050A ram 2111 signetics HA-2060A
Text: HARRIS OPERATIONAL AMPLIFIERS Selection Guide for Military Applications -5 5 °C to +125°C PARAM ETER* F.E.T. PREAMP HA-2000 HA-2000A HA-205O HA-909 S/H ?r a m HA-2060A HA-2400 HA-2420 HA-2050A HA-2060 HA-2500 HA-2502 HA-2510 HA-2512 UNITS INPUT C H A R A C TE R IST IC S
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HA-909
HA-205O
HA-2050A
HA-2060
HA-2060A
HA-2500
HA-2502
HA-2510
HA-2512
HA-2000
HA-2650
H12-200
MC1554
teledyne philbrick
sl 1489a
HA-2000A
ram 2111 signetics
HA-2060A
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55199
Abstract: 55199 semiconductor lm38s LM185 LM185-25 LM385-2 LM 2480 na
Text: Semiconductor LM185-2.5/LM285-2.5/LM385-2.5 Micropower Voltage Reference Diode General Description T h e LM 18 5 -2 .5 /L M 28 5 -2 .5 /L M 3 85 -2 .5 are m icropow er 2term inal band-gap voltage regulator diodes. Operating over a 20 ju.A to 20 m A current range, they feature exceptionally
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LM185-2
5/LM285-2
5/LM385-2
LM-185-2
LM334
tl/h/5519â
55199
55199 semiconductor
lm38s
LM185
LM185-25
LM385-2
LM 2480 na
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XC-554-R
Abstract: NSM3914 NSM4000A XC-556-R NSM3915 XC-55-PC nsm1416 NSM-1416 NSM4000 nsm39148
Text: Z o iA a. evi C CUj OS II e o c o ^ "'3 '^ '^ r^ -^ '^ r'» -^ '^ -« 3 -T i-^ -^ i-in in i'« -r''r'-C M e M C \ic \je \ic M C M e \ic N C M C \jc N c v jc M e M C M C M c \jc o o o c o e o o o e o c o o o e o o o c o e o e o c o e o o o c b c ò '-'-’- ’- T - ' - T - i - T - i - i - T - i - i - T - i - i n i n n M M n w w w n e o c o e o m w w c o w n n n n w c o n n c o n n w c o w n n M c o n m M c o c o '
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nsl6154
mv5154
nsl6252
mv5252
nsl6253
mv5253
nsl6254
mv5254
nsl6352
mv5352
XC-554-R
NSM3914
NSM4000A
XC-556-R
NSM3915
XC-55-PC
nsm1416
NSM-1416
NSM4000
nsm39148
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