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    LM5113TM Search Results

    LM5113TM Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    LM5113TME/NOPB Texas Instruments 100 V 1.2-A / 5-A, Half-Bridge Gate Driver for Enhancement Mode GaN FETs 12-DSBGA Visit Texas Instruments Buy
    LM5113TMX/NOPB Texas Instruments 100 V 1.2-A / 5-A, Half-Bridge Gate Driver for Enhancement Mode GaN FETs 12-DSBGA Visit Texas Instruments
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    LM5113TM Price and Stock

    Texas Instruments LM5113TME-NOPB

    IC GATE DRVR HALF-BRIDGE 12DSBGA
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    DigiKey LM5113TME-NOPB Digi-Reel 3,425 1
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    LM5113TME-NOPB Cut Tape 3,425 1
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    Texas Instruments LM5113TMX-NOPB

    IC GATE DRVR HALF-BRIDGE 12USMD
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    DigiKey LM5113TMX-NOPB Reel 3,000
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    Texas Instruments LM5113TME/NOPB

    Gate Drivers 5A 100V Half-Brdg Gate Dvr
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    Mouser Electronics LM5113TME/NOPB 266
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    Arrow Electronics LM5113TME/NOPB Cut Strips 108 6 Weeks 1
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    Quest Components LM5113TME/NOPB 75
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    Rochester Electronics LM5113TME/NOPB 48 1
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    Chip1Stop LM5113TME/NOPB Cut Tape 160
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    Win Source Electronics LM5113TME/NOPB 4,162
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    Texas Instruments LM5113TMX/NOPB

    Gate Drivers 5A 100V Half-Brdg Gate Dvr
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    Arrow Electronics LM5113TMX/NOPB Cut Strips 22 18 Weeks 1
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    Win Source Electronics LM5113TMX/NOPB 4,106
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    Texas Instruments LM5113TMX

    LM5113 5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs
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    Win Source Electronics LM5113TMX 4,132
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    LM5113TM Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    LM5113TME/NOPB Texas Instruments LM5113 - 5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs 12-DSBGA Original PDF
    LM5113TMX/NOPB Texas Instruments LM5113 - 5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs 12-DSBGA Original PDF

    LM5113TM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    stackpole potentiometer

    Abstract: No abstract text available
    Text: Figure 4: Typical Waveforms for VIN = 48 V to 5 V/14 A 500 kHz Buck converter CH1: Switch node voltage (VSW) - CH2: PWM input voltage (VPWM) NOTE. The EPC9017 development board does not have any current or thermal protection on board. Figure 3: Proper Measurement of Switch Node – VSW


    Original     		PDF EPC9017 EPC2001 stackpole potentiometer

    Untitled

    Abstract: No abstract text available
    Text: LM5113 www.ti.com SNVS725F – JUNE 2011 – REVISED APRIL 2013 LM5113 5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs Check for Samples: LM5113 FEATURES 1 • 2 • • • • • • • • • Independent High-Side and Low-Side TTL Logic Inputs


    Original     		PDF LM5113 SNVS725F LM5113 100VDC

    EPC8004

    Abstract: No abstract text available
    Text: APPLICATION NOTE: AN015 eGaN FETs for Multi-MHz Applications Introducing a Family of eGaN FETs for Multi-Megahertz Hard Switching Applications EFFICIENT POWER CONVERSION Michael de Rooij, PhD, Johan Strydom, PhD The ultra high speed switching capabilities of gallium nitride transistors have now been


    Original     		PDF AN015 EPC8000 ATS-54150K-C2-R0 EPC8004

    Untitled

    Abstract: No abstract text available
    Text: Figure 3: Proper Measurement of Switch Node – OUT Figure 4: Typical Waveforms for VIN = 48 V to 5 V/7 A 500kHz Buck converter CH1: Switch node voltage (VSW) - CH2: PWM input voltage (VPWM) NOTE. The EPC9002 development board does not have any current or thermal protection on board.


    Original     		PDF 500kHz) EPC9002 EPC2001

    Untitled

    Abstract: No abstract text available
    Text: Figure 4: Typical Waveforms for VIN = 24 V to 1.2 V/15 A 500kHz Buck converter CH1: VPWM Input voltage – CH3: (IOUT) Switch node current – CH4: (VOUT) Switch node voltage NOTE. The EPC9001 development board does not have any current or thermal protection on board.


    Original     		PDF 500kHz) EPC9001 EPC2015

    Untitled

    Abstract: No abstract text available
    Text: WHITE PAPER: WP014 eGaN FETs in Wireless Power Transfer Systems eGaN® FETs in Wireless Power Transfer Systems EFFICIENT POWER CONVERSION Alex Lidow, Ph.D., CEO and Michael de Rooij, Ph.D., Executive Director of Applications Engineering Introduction The popularity of wireless energy transfer has increased over the last few years and in particular for applications targeting portable device charging. In this article,


    Original     		PDF WP014

    Untitled

    Abstract: No abstract text available
    Text: EPC reserves the right at any time, without notice, to change said circuitry and specifications. Demonstration Board Notification The EPC9107 board is intended for product evaluation purposes only and is not intended for commercial use. As an evaluation tool, it is not


    Original     		PDF EPC9107

    Untitled

    Abstract: No abstract text available
    Text: EPC reserves the right at any time, without notice, to change said circuitry and specifications. Demonstration Board Notification The EPC9101 board is intended for product evaluation purposes only and is not intended for commercial use. As an evaluation tool, it is not


    Original     		PDF EPC9101

    Untitled

    Abstract: No abstract text available
    Text: LM5113 www.ti.com SNVS725F – JUNE 2011 – REVISED APRIL 2013 LM5113 5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs Check for Samples: LM5113 FEATURES 1 • 2 • • • • • • • • • Independent High-Side and Low-Side TTL Logic Inputs


    Original     		PDF LM5113 SNVS725F LM5113 100VDC

    Untitled

    Abstract: No abstract text available
    Text: D C B A VOUT 1 C3 C1 220pF C2 MODE TRK/SS VCC R2 15k 22pF 0.1uF, 25V R8 39.2k R7 Zero Opt 6 5 4 3 2 S- RUN C5 S+ EXT 2 MODE 100k R12 R11 560k 11 12 13 14 0.1uF, 25V C7 16 15 R9 2.2 IntVCC PGND BG SW TG Boost VIN U1 LTC3833 R10 10.0k C18 Optional VIN PGOOD


    Original     		PDF 220pF LTC3833 100pF SDM03U40 LM5113TM 270nH EPC9101 EPC2015

    smd transistor A1 HB

    Abstract: LM5113 WSON 10 DPR0010A Texas Instruments GaN
    Text: LM5113 www.ti.com SNVS725E – JUNE 2011 – REVISED JANUARY 2012 LM5113 5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs Check for Samples: LM5113 FEATURES 1 • 2 • • • • • • Independent high-side and low-side TTL logic inputs 1.2A/5A peak source/sink current


    Original     		PDF LM5113 SNVS725E LM5113 100VDC smd transistor A1 HB WSON 10 DPR0010A Texas Instruments GaN

    Untitled

    Abstract: No abstract text available
    Text: LM5113 www.ti.com SNVS725F – JUNE 2011 – REVISED APRIL 2013 LM5113 5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs Check for Samples: LM5113 FEATURES 1 • 2 • • • • • • • • • Independent High-Side and Low-Side TTL Logic Inputs


    Original     		PDF LM5113 SNVS725F LM5113 100VDC

    J5 controller board circuit diagram

    Abstract: No abstract text available
    Text: Figure 4: Typical Waveforms for VIN = 48 V to 5 V/35 A 300 kHz Buck converter CH1: PWM input voltage (VPWM) – CH4: Switch node voltage (VSW) NOTE. The EPC9013 development board does not have any current or thermal protection on board. Figure 3: Proper Measurement of Switch Node – VSW


    Original     		PDF EPC9013 EPC2001 J5 controller board circuit diagram

    Untitled

    Abstract: No abstract text available
    Text: Figure 4: Typical Waveforms for VIN = 24 V to 1.2 V/25 A 1000kHz Buck converter CH2: Switch node voltage (VSW) – CH4: PWM input voltage (VPWM) NOTE. The EPC9016 development board does not have any current or thermal protection on board. Figure 3: Proper Measurement of Switch Node – VSW


    Original     		PDF 1000kHz) EPC9016 EPC2015

    smd transistor A1 HB

    Abstract: omap hs smd driver fets
    Text: LM5113 5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs General Description Features The LM5113 is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride GaN FETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of driving a high-side enhancement mode GaN FET operating up to 100V. The high-side


    Original     		PDF LM5113 smd transistor A1 HB omap hs smd driver fets

    KEYSTONE 5015

    Abstract: No abstract text available
    Text: D C B 1 TRACK SYNC EXT C2 C3 150pF 22pF R7 Opt R5 Zero VCC R2 18k 0.1uF, 25V TRK/SS R4 10.0k 47pF C12 MODE TRK/SS PGOOD Rev. 1.0 1 Demonstration Board – EPC9107 Schematic C1 R3 45.0k VOUT Remote Sensing 1k R14 Keystone 5015 1 TP9 VCC 1k R13 Keystone 5015


    Original     		PDF 150pF EPC9107 LTC3833 SDM03U40 LM2766M6 EPC2015 HCF1305-1R0 100uF, KEYSTONE 5015

    R814

    Abstract: No abstract text available
    Text: 2 3 C90 1uF, 25V C94 100nF, 50V 5V OUT C91 1uF, 25V 5V 5V Control Supply Regulator 5 6 2.5Vref 2.5Vref OUT A C93 22uF, 25V Voltage Reference C50 100nF, 50V C71 100nF 50V J61 ExtOsc 3 ACVcoilFB 2 VcoilFB 1 .1” Male Vert. 1 R15 2 250E Control Method 1-2 = Internal Feedback


    Original     		PDF 100nF, 100nF LM5113TM 16mohm EPC2014 R814