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Toshiba America Electronic Components TCR2LN15,LF(SE LDO REG VOUT=1.5V I=200MA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TCR2LN15,LF(SE	Cut Tape	9,600		1	1 $0.46 10 $0.273 100 $0.1671 1000 $0.10836 10000 $0.08359	Buy Now
Mouser Electronics	TCR2LN15,LF(SE		20,000			1 $0.44 10 $0.224 100 $0.123 1000 $0.091 10000 $0.08	Buy Now
Traco Power TXLN-150-124 AC/DC CONVERTER 24V 151W
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TXLN-150-124	Box	271		1	1 $81.22 10 $74.581 100 $68.4786 1000 $60.01248 10000 $60.01248	Buy Now
Traco Power TXLN-150-148 AC/DC CONVERTER 48V 154W
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TXLN-150-148	Box	21		1	1 $81.22 10 $74.581 100 $68.4786 1000 $60.01248 10000 $60.01248	Buy Now
Carlo Gavazzi Holding AG IA30FLN15PO SENSOR PROX INDUCTIVE 15MM CYL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IA30FLN15PO	Box	10		1	1 $212 10 $180.502 100 $180.502 1000 $180.502 10000 $180.502	Buy Now
Carlo Gavazzi Holding AG IA30FLN15NOM1 SENSOR PROX INDUCTIVE 15MM CYL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IA30FLN15NOM1	Box	10		1	1 $204 10 $172.901 100 $172.901 1000 $172.901 10000 $172.901	Buy Now
Newark	IA30FLN15NOM1	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Master Electronics	IA30FLN15NOM1					1 $179.41 10 $158.84 100 $154.4 1000 $154.4 10000 $154.4	Buy Now

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LN15 Datasheets (39)

Part	Manufacturer	Description	Datasheet Type	PDF
LN15	Samsung Electronics	Single Jacket Non-Armored	Original	PDF
LN1500	Amplifier Research	Low Noise Pre-Amp .1 - 1500 MHz	Original	PDF
LN1500M2	Amplifier Research	Low Noise Pre-Amp .1 - 1500 MHz	Original	PDF
LN150WP38	Panasonic	LED, Bi-Color, 565/630nm Wave Length, 2/1.5mcd Intensity	Original	PDF
LN150WP38	Unknown	The Optical Devices Data Book (Japanese)	Scan	PDF
LN151	Panasonic	GaAs Infrared Light Emitting Diodes	Original	PDF
LN151F	Panasonic	GaAs Infrared Light Emitting Diodes	Original	PDF
LN151F	Panasonic	GaAs Infrared Light Emitting Diodes	Original	PDF
LN151F	Unknown	The Optical Devices Data Book (Japanese)	Scan	PDF
LN151F	Panasonic	Light Emitting Diodes	Scan	PDF
LN151F	Panasonic	Light Emitting Diodes LED	Scan	PDF
LN151L	Panasonic	GaAs Infrared Light Emitting Diodes	Original	PDF
LN151L	Panasonic	GaAs Infrared Light Emitting Diodes	Original	PDF
LN151L	Unknown	The Optical Devices Data Book (Japanese)	Scan	PDF

LN151L	Panasonic	Light Emitting Diodes	Scan	PDF
LN151L	Panasonic	Light Emitting Diodes LED	Scan	PDF
LN152	Panasonic	GaAs Infrared Light Emitting Diode	Original	PDF
LN152	Panasonic	GaAs Infrared Light Emitting Diode	Original	PDF
LN152	Unknown	The Optical Devices Data Book (Japanese)	Scan	PDF
LN152	Panasonic	Light Emitting Diodes	Scan	PDF

LN15 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Infrared Light Emitting Diodes LNA2402L LN151L , LNA2403F (LN151F) LNA2402L Unit: mm φ4.6±0.15 12.7 min. GaAs Infrared Light Emitting Diodes 6.3±0.3 Glass lens For optical control systems 2-φ0.45±0.05 2.54±0.25 1. • Features 0. 15 1. 0± ° 2 1 φ5.75 max.	Original	LNA2402L LN151L) LNA2403F LN151F)	PDF
Untitled Abstract: No abstract text available Text: Infrared Light Emitting Diodes LN152 GaAs Infrared Light Emitting Diode For optical control systems Unit: mm +0.2 φ5.35 -0.1 +0.1 0.2±0.05 0± 0. 1 5 .1 +0 0.1 0- 1. 2.0±0.1 2-φ0.45±0.05 1. • High-power output, high-efficiency: PO = 10 mW typ. • Wide directivity, matched for external optical systems: θ = 90°	Original	LN152	PDF
L15X60 Abstract: LN15XB60 Text: 低ノイズタイプシングルインライン型 Bridge Diode Low Noise type Single In-line Package •外観図 OUTLINE LN15XB60 Unit : mm Weight : 7.1g （typ.） Package：5S 600V 15A 管理番号（例） Control No. 品名略号 Type No. 特長	Original	LN15XB60 L15X60 25unless J534-1 L15X60 LN15XB60	PDF
LN159 Abstract: LN59 LNA2701L Text: Infrared Light Emitting Diodes LNA2701L LN159 GaAs Infrared Light Emitting Diode VTR tape and sensor Unit: mm 8° M Di ain sc te on na tin nc ue e/ d 8° 0.5 max. 8° 8° 0.8 8° 2.4±0.2 2-R0.7 1.0 V IF 50 mA IFP 1 A Power dissipation PD 75 mW Operating ambient temperature	Original	LNA2701L LN159) LN159 LN59 LNA2701L	PDF
LN151F Abstract: LN151L Text: Infrared Light Emitting Diodes LN151F, LN151L LN151F Unit : mm ø4.6±0.15 Glass window 4.5±0.2 GaAs Infrared Light Emitting Diodes 12.7 min. For optical control systems Features 2-ø0.45±0.05 High-power output, high-efficiency : PO = 7.5 mW typ. 2.54±0.25	Original	LN151F, LN151L LN151F LN151L) LN151F) 100mA LN151L LN151F	PDF
LN151F Abstract: LN151L LNA2402L LNA2403F Text: Infrared Light Emitting Diodes LNA2403F Unit : mm 4.6 0.15 Glass window 4.5 0.2 LNA2403F, LNA2402L LN151F, LN151L 12.7 min. GaAs Infrared Light Emitting Diodes For optical control systems Features 2- 0.45 0.05 2.54 0.25 1. High-power output, high-efficiency : PO = 7.5 mW (typ.)	Original	LNA2403F LNA2403F, LNA2402L LN151F, LN151L) LN151F) LN151F LN151L LNA2402L LNA2403F	PDF
sr 100/25 Abstract: LN159 LN59 LNA2701L Text: Infrared Light Emitting Diodes LNA2701L LN159 GaAs Infrared Light Emitting Diode VTR tape and sensor Unit: mm 8° 0.5 max. 2.8±0.2 8° 1.3±0.2 8° 0.8 φ1.4±0.2 Pulse forward current * Power dissipation Operating ambient temperature Storage temperature	Original	LNA2701L LN159) sr 100/25 LN159 LN59 LNA2701L	PDF
duty control Abstract: LN155 LNA2603F Text: Infrared Light Emitting Diodes LNA2603F LN155 GaAs Infrared Light Emitting Diode For optical control systems Unit: mm 1.6±0.1 1.5±0.2 0.3 max. 3.5±0.15 2.1±0.15 1.6±0.15 0.8±0.1 12.8 min. (2.95) 3.9±0.25 • High-power output, high-efficiency: PO = 6 mW (typ.)	Original	LNA2603F LN155) duty control LN155 LNA2603F	PDF
l15x60h Abstract: l15x60 LN15XB60H Text: Bridge Diode 低ノイズタイプシングルインライン型 Low Noise type Single In-line Package •外観図 OUTLINE LN15XB60H Unit : mm Weight : 7.1g （typ.） Package：5S 600V 15A 管理番号（例） Control No. 品名略号 Type No. 特長	Original	LN15XB60H L15X60H 25unless J534-1 l15x60h l15x60 LN15XB60H	PDF
Untitled Abstract: No abstract text available Text: Infrared Light Emitting Diodes LNA2603F LN155 GaAs Infrared Light Emitting Diode For optical control systems Unit: mm 1.6±0.1 1.5±0.2 0.3 max. 3.5±0.15 2.1±0.15 1.6±0.15 0.8±0.1 12.8 min. (2.8) 3.9±0.25 • High-power output, high-efficiency: PO = 6 mW (typ.)	Original	LNA2603F LN155)	PDF
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LN152 GaAs Infrared Light Emitting Diode For optical control systems Unit: mm +0.2 φ5.35 -0.1 +0.1 0.2±0.05 0± 0. 1 5 .1 +0 0.1 0- 1. 2.0±0.1 2-φ0.45±0.05 1.	Original	2002/95/EC) LN152	PDF
Untitled Abstract: No abstract text available Text: SHINDENGEN General Purpose Rectifiers LN15XB60H iLow Noise Bridges OUTLINE DIMENSIONS Case : 5S Unit : mm 600V 25A RATINGS Absolute Maximum Ratings (Unless otherwise specified, Tc=25j Symbol Conditions @Item Tstg Storage Temperature Tj Operating Junction Temperature	Original	LN15XB60H 1mst10ms,	PDF
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LN152 GaAs Infrared Light Emitting Diode For optical control systems • Features  Absolute Maximum Ratings Ta = 25°C Parameter di p Pl lan nclu ea e se pla m d m des	Original	2002/95/EC) LN152	PDF
Untitled Abstract: No abstract text available Text: Infrared Light Emitting Diodes LNA2402L LN151L , LNA2403F (LN151F) LNA2402L 12.7 min. 6.3±0.3 Glass lens GaAs Infrared Light Emitting Diodes 2-φ0.45±0.05 M Di ain sc te on na tin nc ue e/ d For optical control systems 2.54±0.25 100 mA 2 A °C ce /D isc	Original	LNA2402L LN151L) LNA2403F LN151F)	PDF

Untitled Abstract: No abstract text available Text: 低ノイズタイプシングルインライン型 Bridge Diode Low Noise type Single In-line Package •外観図 OUTLINE LN15XB60 Unit : mm Weight : 7.1g （typ.） Package：5S 600V 15A 管理番号（例） Control No. 品名略号 Type No. 特長	Original	LN15XB60 L15X60	PDF
Untitled Abstract: No abstract text available Text: Infrared Light Emitting Diodes LNA2701L LN159 GaAs Infrared Light Emitting Diode VTR tape and sensor Unit: mm 8° 2.8±0.2 Forward current IF Pulse forward current * IFP Power dissipation PD Operating ambient temperature Topr Storage temperature Tstg Note) *: f = 100 Hz, Duty Cycle = 0.1%	Original	LNA2701L LN159)	PDF
L15X60 Abstract: No abstract text available Text: 低ノイズタイプシングルインライン型ブリッジダイオード Low Noise type Single In-line Package Bridge Diode •外形寸法図 OUTLINE DIMENSIONS Package：5S Unit : mm Weight：7.1g（typ.） LN15XB60 管理番号（例） Control No.	Original	LN15XB60 L15X60 25unless wave50Hz	PDF
l15x60h Abstract: L15X60 Text: 低ノイズタイプシングルインライン型ブリッジダイオード Low Noise type Single In-line Package Bridge Diode •外形寸法図 OUTLINE DIMENSIONS Unit : mm Weight：7.1g（typ.） Package：5S LN15XB60H 管理番号（例） Control No.	Original	LN15XB60H L15X60H 25unless wave50Hz L15X60	PDF
Untitled Abstract: No abstract text available Text: Panasonic Infrared Light Emitting Diodes LN151F, LN151L Unit : 111111 LN151F ^4.6±0.15 G aAs Infrared Light Em itting Diodes Glass window / - ?in For optical control systems I f 2-0O.45±O.O5 • Features • High-power output, high-efficiency : PQ = 7.5 mW typ.	OCR Scan	LN151F LN151F, LN151L LN151L) LN151F)	PDF
GaAs 1000 nm Infrared Diode Abstract: GaAs 850 nm Infrared Emitting Diode LN152 Text: Panasonic Infrared Light Emitting Diodes LN152 GaAs Infrared Light Emitting Diode U nit : mm For optical control systems \ ! r — i— • Features • H igh-pow er output, high-efficiency : P Q = 10 mW typ. • W ide directivity, m atched for external optical systems : 0 = 100 deg.	OCR Scan	LN152 100mA 100mA GaAs 1000 nm Infrared Diode GaAs 850 nm Infrared Emitting Diode LN152	PDF
Untitled Abstract: No abstract text available Text: Panasonic Infrared Light Emitting Diodes LN155 G aAs Infrared Light Em itting Diode For optical control systems • Features • High-power output, high-efficiency : PQ = 6 mW typ. • Light emitting spectrum suited for silicon photodetectors : XP = 940 nm (typ.)	OCR Scan	LN155	PDF
Untitled Abstract: No abstract text available Text: Panasonic Infrared Light Emitting Diodes LN159 GaAs Bi-directional Infrared Light Emitting Diode For light source of VCR VHS System • Features • • • • • Two-way directivity High-power output, high-efficiency : PQ = 1.8 mW (min.) Small resin package	OCR Scan	LN159	PDF
15XB60 Abstract: No abstract text available Text: Bridge Diode Low Noise type Single In-line Package •W IN -äsia Package : 5S OUTLINE DIMENSIONS LN15XB60 Unit : mm 600V 15A 4.6 ±a2 T y p e No. D ate code @ L15X60 45 £1 •S IP ilv tr-V ~r 23 2.502 2,7 ±a2 0.7 ±ai 7.5 10^ CD D .7.5 CD © (« fiL tC D S rö E O L Y C tt, Ü E P tt« £ C !B lS <	OCR Scan	LN15XB60 L15X60 15XB60 15XB60	PDF
LN155 Abstract: No abstract text available Text: Panasonic Infrared Light Emitting Diodes LN155 GaAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : P Q = 6 mW typ. • Light emitting spectrum suited for silicon photodetectors XP = 940 nm (typ.)	OCR Scan	LN155 LN155	PDF

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LN15 Price and Stock

Toshiba America Electronic Components TCR2LN15,LF(SE

Traco Power TXLN-150-124

Traco Power TXLN-150-148

Carlo Gavazzi Holding AG IA30FLN15PO

Carlo Gavazzi Holding AG IA30FLN15NOM1

LN15 Datasheets (39)

LN15 Datasheets Context Search

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L15X60

LN159

LN151F

LN151F

sr 100/25

duty control

l15x60h

Untitled

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L15X60

l15x60h

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GaAs 1000 nm Infrared Diode

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15XB60

LN155