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    DIM200PHM33-F000

    Abstract: DIM200PHM33-F
    Text: DIM200PHM33-F000 Half Bridge IGBT Module Replaces DS5606-4 DS5606-5 October 2011 LN28814 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  Soft Punch Through Silicon VCES VCE(sat) * (typ) IC (max) IC(PK) (max)


    Original     		PDF DIM200PHM33-F000 DS5606-4 DS5606-5 LN28814) DIM200PHM33-F000 DIM200PHM33-F

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    Abstract: No abstract text available
    Text: DIM200PHM33-F000 Half Bridge IGBT Module Replaces DS5606-4 DS5606-5 October 2011 LN28814 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  Soft Punch Through Silicon VCES VCE(sat) * (typ) IC (max) IC(PK) (max)


    Original     		PDF DIM200PHM33-F000 DS5606-4 DS5606-5 LN28814)