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Text: DIM250PLM33-TS000 IGBT Chopper Module DS6108-1 June 2013 LN30636 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand High Thermal Cycling Capability High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC (max) IC(PK) (max) Isolated AlSiC Base with AlN Substrates
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DIM250PLM33-TS000
DS6108-1
LN30636)
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Untitled
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Text: DIM1000ECM33-TL000 IGBT Chopper Module DS6105-1 June 2013 LN30633 FEATURES KEY PARAMETERS • Low VCE(sat) Device 10µs Short Circuit Withstand High Thermal Cycling Capability VCES VCE(sat) * (typ) IC (max) IC(PK) (max) High Current Density Enhanced DMOS SPT
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DIM1000ECM33-TL000
DS6105-1
LN30633)
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Text: Preliminary Information Data DIM400XCM45-TS001 IGBT Chopper Module DS6110-1 June 2013 LN30638 FEATURES KEY PARAMETERS • 10.2kV Isolation 10µs Short Circuit Withstand High Thermal Cycling Capability VCES VCE(sat) * (typ) IC (max) IC(PK) (max)
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DIM400XCM45-TS001
DS6110-1
LN30638)
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Text: DIM1000NSM33-TL000 Single Switch IGBT Module DS6109-1 June 2013 LN30637 FEATURES KEY PARAMETERS • Low VCE(sat) Device 10µs Short Circuit Withstand High Thermal Cycling Capability VCES VCE(sat) * (typ) IC (max) IC(PK) (max) High Current Density Enhanced DMOS SPT
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DIM1000NSM33-TL000
DS6109-1
LN30637)
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DFM100PXM33-F000
Abstract: No abstract text available
Text: DFM100PXM33-F000 Fast Recovery Diode Module Replaces DS5907-2 DS5907-3 April 2013 LN30630 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge High Switching Speed Low Forward Volt Drop Isolated AlSiC Base With AlN Substrates
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DFM100PXM33-F000
DS5907-2
DS5907-3
LN30630)
DFM100PXM33-F000
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Text: DFM100PXM33-F000 Fast Recovery Diode Module Replaces DS5907-2 DS5907-3 April 2013 LN30630 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge High Switching Speed Low Forward Volt Drop Isolated AlSiC Base With AlN Substrates
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DFM100PXM33-F000
DS5907-2
DS5907-3
LN30630)
DFM100PXM33-F000
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Untitled
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Text: Preliminary Information Data DIM400XCM45-TS000 IGBT Chopper Module DS6111-1 June 2013 LN30639 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand High Thermal Cycling Capability High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC
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DIM400XCM45-TS000
DS6111-1
LN30639)
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Text: Preliminary Information Data DIM1200ASM45-TS001 Single Switch IGBT Module DS6107-1 June 2013 LN30635 FEATURES KEY PARAMETERS • 10.2kV Isolation 10µs Short Circuit Withstand High Thermal Cycling Capability VCES VCE(sat) * (typ) IC (max) IC(PK)
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DIM1200ASM45-TS001
DS6107-1
LN30635)
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DIM1000XSM33-TL001
Abstract: No abstract text available
Text: DIM1000XSM33-TL001 Single Switch IGBT Module DS6104-1 June 2013 LN30632 FEATURES KEY PARAMETERS • 10.2kV Isolation Low VCE(sat) Device 10µs Short Circuit Withstand VCES VCE(sat) * (typ) IC (max) IC(PK) (max) High Thermal Cycling Capability
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DIM1000XSM33-TL001
DS6104-1
LN30632)
DIM1000XSM33-TL001
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Untitled
Abstract: No abstract text available
Text: Preliminary Information Data DIM400XCM45-TS000 IGBT Chopper Module DS6111-1 June 2013 LN30639 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand High Thermal Cycling Capability High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC
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DIM400XCM45-TS000
DS6111-1
LN30639)
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Untitled
Abstract: No abstract text available
Text: Preliminary Information Data DIM1200ASM45-TS001 Single Switch IGBT Module DS6107-1 June 2013 LN30635 FEATURES KEY PARAMETERS • 10.2kV Isolation 10µs Short Circuit Withstand High Thermal Cycling Capability VCES VCE(sat) * (typ) IC (max) IC(PK)
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DIM1200ASM45-TS001
DS6107-1
LN30635)
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DIM1000NSM33-TL000
Abstract: DIM1000NSM33-TL
Text: DIM1000NSM33-TL000 Single Switch IGBT Module DS6109-1 June 2013 LN30637 FEATURES KEY PARAMETERS • Low VCE(sat) Device 10µs Short Circuit Withstand High Thermal Cycling Capability VCES VCE(sat) * (typ) IC (max) IC(PK) (max) High Current Density Enhanced DMOS SPT
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DIM1000NSM33-TL000
DS6109-1
LN30637)
DIM1000NSM33-TL000
DIM1000NSM33-TL
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Untitled
Abstract: No abstract text available
Text: DIM1000ECM33-TL000 IGBT Chopper Module DS6105-1 June 2013 LN30633 FEATURES KEY PARAMETERS • Low VCE(sat) Device 10µs Short Circuit Withstand High Thermal Cycling Capability VCES VCE(sat) * (typ) IC (max) IC(PK) (max) High Current Density Enhanced DMOS SPT
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DIM1000ECM33-TL000
DS6105-1
LN30633)
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Untitled
Abstract: No abstract text available
Text: Preliminary Information Data DIM400XCM45-TS001 IGBT Chopper Module DS6110-1 June 2013 LN30638 FEATURES KEY PARAMETERS • 10.2kV Isolation 10µs Short Circuit Withstand High Thermal Cycling Capability VCES VCE(sat) * (typ) IC (max) IC(PK) (max)
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DIM400XCM45-TS001
DS6110-1
LN30638)
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Untitled
Abstract: No abstract text available
Text: DIM1000XSM33-TL001 Single Switch IGBT Module DS6104-1 June 2013 LN30632 FEATURES KEY PARAMETERS • 10.2kV Isolation Low VCE(sat) Device 10µs Short Circuit Withstand VCES VCE(sat) * (typ) IC (max) IC(PK) (max) High Thermal Cycling Capability
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DIM1000XSM33-TL001
DS6104-1
LN30632)
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IN2222A
Abstract: transitron catalog TCR43 TM106 IN443 1n9448 sv4091 IN4868 diode 3N68 IN536
Text: ron Tro nsitron electronic corporation e I ron 168 Albion Street . Wakefield. Massachusetts 01881 WAKEFIELD, MASSACHUSE TTS BOSTON, MASSACHUSETTS MELROSE, MASSACHUSETTS NUEVO LAREDO, MEXICO BERKSHIRE, ENGLAND PARIS, FRANCE AMSTERDAM, THE NETHERLANDS ~ ciectl'onic corpOI'atioll
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