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    DIM800DCS12-A000

    Abstract: DIM800DCS12-A
    Text: 16 3 Replaces DS5839-1.1 FEATURES ±0.2 • 10µs Short Circuit Withstand  Non Punch Through Silicon  Isolated Cu Base With Al2O3 Substrates  Lead Free Construction DS5839-2 July 2014 LN31760 KEY PARAMETERS 6 x O7 VCES VCE(sat) * (typ) IC (max)


    Original     		PDF DS5839-1 DIM800DCS12-A000 DIM800DCS12-A