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    LOAD CELL KIS- 3 Search Results

    LOAD CELL KIS- 3 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ISL94216IRZ-T Renesas Electronics Corporation 16-Cell Battery Front End Visit Renesas Electronics Corporation
    ISL94216IRZ-T7 Renesas Electronics Corporation 16-Cell Battery Front End Visit Renesas Electronics Corporation
    ISL94216AIRZ Renesas Electronics Corporation 16-Cell Battery Front End Visit Renesas Electronics Corporation
    ISL94216AIRZ-T Renesas Electronics Corporation 16-Cell Battery Front End Visit Renesas Electronics Corporation
    ISL94216IRZ Renesas Electronics Corporation 16-Cell Battery Front End Visit Renesas Electronics Corporation

    LOAD CELL KIS- 3 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: KIS-11 Nobel Weighing Systems Weigh Module FEATURES • Capacity: 50kN 11.2Klb • Simple Installation • Moveable load point • Withstands very high lateral forces • Extremely accurate and rugged • ATEX and OIML approval DESCRIPTION APPLICATIONS The KIS-11 load cell has several features


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    PDF KIS-11 KIS-11 27-Apr-2011

    load cell kis- 1-50 KN

    Abstract: m8 bolt shear strength BLH load cell Vishay kis-3 specification load cell kis- 3 load cell kis-2 load cell kis-3 BLH KIS-1 BLH load cell kis kis 1-50 kN
    Text: Model KIS Vishay BLH Transducers Load Cell Weigh Modules FEATURES • Capacity range: 110 to 45000 lb 0.5 to 200 kN • Checkless design - no stay or check rods required • Designed to meet ANSI/UBC wind and seismic load requirements • Insensitive to side loads of up to 100% capacity


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    PDF 08-Apr-05 load cell kis- 1-50 KN m8 bolt shear strength BLH load cell Vishay kis-3 specification load cell kis- 3 load cell kis-2 load cell kis-3 BLH KIS-1 BLH load cell kis kis 1-50 kN

    BLH load cell

    Abstract: Vishay nobel BLH load cell kis nobel SE-691 BLH sr-4 celtron TEDEA BLH transducer load cell to measure load and torque
    Text: z F z x KIS transducers are of the shear-beam type. They measure the strains that arise from the shear forces caused by a load. x y M F, x M (F, x) σx(z) T (F) T (F) τ (a) (z) xz WHY KIS’S FEATURES ARE UNBEATABLE (b) Distribution of bending moment M, shear force T, normal


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    PDF VTR-PL0316-0402 BLH load cell Vishay nobel BLH load cell kis nobel SE-691 BLH sr-4 celtron TEDEA BLH transducer load cell to measure load and torque

    Vishay nobel

    Abstract: BLH load cell BLH sr-4 pressure cell web Tension control system BLH Pressure nobel celtron offshore crane BLH load cell kis 8 blh nobel
    Text: WORLDWIDE SALES CONTACTS Control Systems THE AMERICAS VISHAY TRANSDUCER SYSTEMS AMERICAS VISHAY BLH 75 Shawmut Road Canton, MA 02021 USA PH: +1-781-821-2000 FAX: +1-781-828-1451 E-MAIL: vts.us@vishaymg.com VISHAY TRANSDUCER SYSTEMS CANADA VISHAY BLH V I S H A Y I N T E R T E C H N O L O G Y, I N C .


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    PDF VTG-PL0015-0410 VTG-PL0015-0410 Vishay nobel BLH load cell BLH sr-4 pressure cell web Tension control system BLH Pressure nobel celtron offshore crane BLH load cell kis 8 blh nobel

    Untitled

    Abstract: No abstract text available
    Text: KISD-6 Nobel Weighing Systems Load Cell FEATURES • Capacity range: 50, 100, 200, 400, and 1000kN 11.2K, 22.5K, 45K, 90K, and 225K lb • Cylindrical shape for easy installation • High accuracy • ATEX approved for hazardous areas • High overload capacity


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    PDF 1000kN 17-Mar-10

    load cell kis- 1 KN

    Abstract: No abstract text available
    Text: KIS-9 Nobel Weighing Systems Weigh Module FEATURES • Capacity range: 5, 10, 20, 50, and 100 kN 1.12K, 2.25K, 4.5K, 11.2K, and 22.5K lb • Simple installation • Moveable load point • Withstands very high lateral forces • Extremely accurate and rugged


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    PDF 19-Mar-10 load cell kis- 1 KN

    Vishay nobel

    Abstract: KISD-6 Vishay nobel kisd load cell kis- 1-50 KN KISD load cell load cell kis- 1 KN load cell kis- 3
    Text: Model KISD-6 Vishay Nobel Load Cell FEATURES • Capacity range: 50, 100, 200, 400, and 1000kN 11.2K, 22.5K, 45K, 90K, and 225K lb • Cylindrical shape for easy installation • High accuracy • ATEX approved for hazardous areas • High overload capacity


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    PDF 1000kN 08-Apr-05 Vishay nobel KISD-6 Vishay nobel kisd load cell kis- 1-50 KN KISD load cell load cell kis- 1 KN load cell kis- 3

    Untitled

    Abstract: No abstract text available
    Text: KIS-1 BLH/Nobel Weighing Systems Weigh Module FEATURES • Capacity range: 50, 100, 200, 300, and 500kN  11.2K, 22.4K, 44.9K, 67.5K, and 112.4Klb  Simple installation  Moveable load point  Withstands very high lateral forces  Extremely accurate and rugged


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    PDF 500kN 27-Apr-2011

    Vishay nobel

    Abstract: No abstract text available
    Text: KIS-2 BLH/Nobel Weighing Systems Weigh Module FEATURES • Capacity range: 0.5, 2, 5, 10, 20, 30, and 50kN  112, 450, 1.12K, 2.25K, 4.5K, 6.75K, and 11.2Klb  Simple installation  Moveable load point  Withstands very high lateral forces  Extremely accurate and rugged


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    PDF 27-Apr-2011 Vishay nobel

    Vishay nobel

    Abstract: KIS-9 nobel load cell kis- 9 S-691 27 L4154 load cell kis- 1 KN Load cells L5914
    Text: Model KIS-9 Vishay Nobel Transducers Weigh Module FEATURES • Capacity range: 5, 10, 20, 50, and 100 kN 1.12K, 2.25K, 4.5K, 11.2K, and 22.5K lb • Simple installation • Moveable load point • Withstands very high lateral forces • Extremely accurate and rugged


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    PDF 08-Apr-05 Vishay nobel KIS-9 nobel load cell kis- 9 S-691 27 L4154 load cell kis- 1 KN Load cells L5914

    Untitled

    Abstract: No abstract text available
    Text: KIS-3 BLH/Nobel Weighing Systems Weigh Module FEATURES • Capacity range: 1, 2, 5, 10, and 20kN  225, 450, 1.12K, 2.25K, and 4.5Klb  Simple installation  Moveable load point  Withstands very high lateral forces  Extremely accurate and rugged


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    PDF 27-Apr-2011

    load cell kis- 1-50 KN

    Abstract: kIS-8 Vishay nobel S-69127KARLSKOGA B-455 ph 33 j load cell kis- 1 KN S-69127 ph 77 b548
    Text: Model KIS-8 Vishay Nobel Transducers Weigh Module FEATURES • Capacity range - 1, 2, 5, 10, 20, 50, 100, and 200kN 225, 450, 1.12K, 2.25K, 4.5K, 11.2K, 22.4K, and 44.9K lb • Simple installation • Moveable load point • Withstands very high lateral forces


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    PDF 200kN 08-Apr-05 load cell kis- 1-50 KN kIS-8 Vishay nobel S-69127KARLSKOGA B-455 ph 33 j load cell kis- 1 KN S-69127 ph 77 b548

    load cell kis- 1-50 KN

    Abstract: kis 1-50 kN
    Text: KIS-8 Nobel Weighing Systems Weigh Module FEATURES • Capacity range - 1, 2, 5, 10, 20, 50, 100, and 200kN 225, 450, 1.12K, 2.25K, 4.5K, 11.2K, 22.4K, and 44.9K lb • Simple installation • Moveable load point • Withstands very high lateral forces • Extremely accurate and rugged


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    PDF 200kN 22-Feb-10 load cell kis- 1-50 KN kis 1-50 kN

    Untitled

    Abstract: No abstract text available
    Text: KIMD-M Nobel Weighing Systems Weighing Module FEATURES • High accuracy • Easy installation • For harsh environmental conditions • ATEX approved for hazardous areas • Movable load point • Allow movement caused by thermal expension • No extra mounting


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    PDF 1000kN 2000kN 17-Feb-14 27-Apr-2011

    load cell kis- 9

    Abstract: No abstract text available
    Text: HM5116100B Series 16,777,216-word x 1-bit Dynamic Random Access Memory HITACHI ADE-203-371A Z Rev. 1.0 Nov. 10, 1995 Description The Hitachi HM5116100B is a CMOS dynamic RAM organized 16,777,216-word x 1-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5116100B offers Fast Page


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    PDF HM5116100B 216-word ADE-203-371A mW/385 mW/358 16-bit HM51161 load cell kis- 9

    Untitled

    Abstract: No abstract text available
    Text: •«»•gì gl- MICRON TECHNOLOGY INC »Min i1,‘i-,.1j, Éinttlr^rirrr- BflE D bill 54*5 00Q231S 4 rr? T*’ . IMRN ■"* 1 MEG DRAM MODULE X 8 DRAM FAST PAGE MODE • Industry standard pinout in a 30-pin, single-in-line memory module • High-performance, CMOS silicon gate process


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    PDF 00Q231S 30-pin, 450mW 024-cycle T-46-23-17

    Untitled

    Abstract: No abstract text available
    Text: MICRON TECHNOLOGY INC » 14E D DRAM B fe.1115 4 i 0 0 0 0 0 4 ^ *1 B 1MEG x 1 DRAM FAST PAGE MODE FEATURES PIN ASSIGNMENT Top View • Industry standard x l pin-out, timing, functions and packages • High performance, CMOS silicon gate process • Single +5V±10% power supply


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    PDF 175mW

    DF9B-31P-1V

    Abstract: DF9B-31S-1V QZ-19-3F01 PH-BLC08-K2
    Text: S P E SPEC.NO. T Q 3 C - 8 E A C 0 - E LAAZLLl-01 DATE J u l y 17,1999 C FOR T Y P E ; KCB 0 8 4 S V 1 A D - G 4 0 C O N T E N T S 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 18. Application C o n s t r u c t i o n and Outline Mecha n i c a l S p e c i f i c a t i o n s


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    PDF LAAZLLl-01 SV1AD-G40 DF9B-31P-1V DF9B-31S-1V QZ-19-3F01 PH-BLC08-K2

    TL 058 op amp data

    Abstract: No abstract text available
    Text: LM V831 ,L M V 8 32 ,LM V 8 3 4 LMV831 Single/ LMV832 Dual/ LMV834 Quad 3.3 MHz Low Power CMOS, EMI Hardened Operational Amplifiers T ex a s In s t r u m e n t s Literature Number: SNOSAZ6A a l Sem iconductor LMV831 Single/ LMV832 Dual/ LMV834 Quad 3.3 MHz Low Power CMOS, EMI Hardened Operational


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    PDF LMV831 LMV832 LMV834 LMV831, LMV832, 125BD TL 058 op amp data

    Untitled

    Abstract: No abstract text available
    Text: MICRON TECHNOLOGY INC DRAM MODULE FAST PAGE MODE PIN ASSIGNMENT Top View • Industry standard pinout in a 72-pin single-in-line package • High-performance CMOS silicon gate process. • Single 5V ±10% power supply • All inputs, outputs and clocks are fully TTL and


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    PDF 72-pin 800mW 512-cycle 100ns T-46-23-17

    TH58V128FT

    Abstract: No abstract text available
    Text: T O S H IB A TH58V128FT TENTATIVE TOSHIBA M O S DIGITAL INTEGRATED CIRCUIT SILICON GATE CM O S 128 M b it 16 M X 8 bit C M O S N A N D E2PR O M DESCRIPTION The TH58V128 device is a single 3.3 volt 128 M (138,412,032) bit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPROM) organized as 528 bytes X 32 pages X 1024 blocks.


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    PDF TH58V128FT TH58V128 44/40-P-400-0 TH58V128FT

    ah rzj

    Abstract: MSM511002-10 MSM511002-12
    Text: O K I d SEMICONDUCTOR B d s e GR O U P 10E D | b ? 2 M B LlO □ □□Mlfl'i fl | m i c o n d u c t o r - - r - y fc - a a - MSM511002RS/JS/ZS . 1,048,576-W ORD X 1 -BITS DYNAMIC RAM GENERAL DESCRIPTION The MSM 511002 is a new generation dynamic RAM organized as 1,048,576 words by 1 bit. The


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    PDF CI11SI MSM511002RS/JS/ZS 576-WQRD MSM511002 18-pin MSM511002-10 MSM511002-12 ah rzj MSM511002-10

    PD41264

    Abstract: PD41264V-12 pd41264v UPD41264 C-15 JUPD41264
    Text: SEC JJPD41264 Dual-Port Graphics Buffer NEC Electronics Inc. Description Features The /;PD41264 is a dual-port graphics buffer equipped with a 64K x 4-bit random access port and a 256 x 4-bit serial read port. The serial read port is connected to an internal 1024-bit data register through a 256 x 4-bit


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    PDF uPD41264 PD41264 1024-bit 11PD41264 JJPD41264 fiPD41264 PD41264V-12 pd41264v C-15 JUPD41264

    Untitled

    Abstract: No abstract text available
    Text: LMV851 ,LMV852,LMV854 LMV851/LMV852/LMV854 8 MHz Low Power CMOS, EMI Hardened Operational Amplifiers T exa s ÌNSTRUM ENTS Literature Number: SNOSAW1 £/r Semiconductor LMV851/LM V852/LM V854 8 MHz Low Power CMOS, EMI Hardened Operational Amplifiers General Description


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    PDF LMV851 LMV852 LMV854 LMV851/LMV852/LMV854 LMV851/LM V852/LM LMV851 /LMV852/LMV854