logic level complementary MOSFET
Abstract: No abstract text available
Text: in te r rii Complementary Pairs 9 Power M O SFE T Products PAGE Complementary Pairs Data Sheets RF1K49092 3.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic Level, Complementary LittleFET Power MOSFET. . 9-3 RF1K49224 3.5A/2.5A, 30V, 0.060/0.150 Ohms, Complementary LittleFET™ Power MOSFET.
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RF1K49092
RF1K49224
RF3V49092,
RF3S49092SM
0A/10A,
logic level complementary MOSFET
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MOSFET S1A
Abstract: datasheet RF3V49092 MO-169AB RF3S49092SM RF3S49092SM9A RF3V49092 AN9322
Text: RF3V49092, RF3S49092SM Data Sheet 20A/10A, 12V, 0.060/0.140 Ohm, Logic Level, Complementary Power MOSFET These complementary power MOSFETs are manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated
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RF3V49092,
RF3S49092SM
0A/10A,
MOSFET S1A
datasheet RF3V49092
MO-169AB
RF3S49092SM
RF3S49092SM9A
RF3V49092
AN9322
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RF3S49092SM9A
Abstract: MO-169AB RF3S49092SM RF3V49092 ZT600
Text: RF3V49092, RF3S49092SM interrii Data Sheet 20A/10A, 12V, 0.060/0.140 Ohm, Logic Level, Complementary Power MOSFET These complementary power MOSFETs are manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated
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RF3V49092,
RF3S49092SM
0A/10A,
RF3S49092SM9A
MO-169AB
RF3S49092SM
RF3V49092
ZT600
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Untitled
Abstract: No abstract text available
Text: RF1K49092 Data Sheet 3.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic Level, Complementary LittleFET Power MOSFET August 1999 File Number 3968.5 Features • 3.5A, 12V N-Channel 2.5A, 12V (P-Channel) [ /Title (RF1K This complementary power MOSFET is manufactured using
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RF1K49092
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AN9321
Abstract: MS-012AA RF1K49092 RF1K4909296 TB334 AN9322
Text: RF1K49092 Data Sheet January 2002 3.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic Level, Complementary LittleFET Power MOSFET Features This complementary power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits,
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RF1K49092
AN9321
MS-012AA
RF1K49092
RF1K4909296
TB334
AN9322
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PDF
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AN9321
Abstract: MS-012AA RF1K49092 RF1K4909296 TB334
Text: RF1K49092 Data Sheet August 1999 File Number 3.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic Level, Complementary LittleFET Power MOSFET Features This complementary power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits,
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RF1K49092
AN9321
MS-012AA
RF1K49092
RF1K4909296
TB334
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PDF
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TPG1212
Abstract: PIN diode Pspice model
Text: RF3V49092, RF3S49092, RF3S49092SM S e m iconductor November 1998 Data Sheet 20A/10A, 12V, 0.060/0.140 Ohm, Logic Level, Complementary Power MOSFETs These complementary power MOSFETs are manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated
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RF3V49092,
RF3S49092,
RF3S49092SM
0A/10A,
1-800-4-HARRIS
TPG1212
PIN diode Pspice model
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PDF
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MO-169AB
Abstract: RF3S49092SM RF3S49092SM9A N-Channel UltraFET Power MOSFETs
Text: RF3S49092SM Data Sheet 20A/10A, 12V, 0.060/0.140 Ohm, Logic Level, Complementary Power MOSFET These complementary power MOSFETs are manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in
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RF3S49092SM
0A/10A,
MO-169AB
RF3S49092SM
RF3S49092SM9A
N-Channel UltraFET Power MOSFETs
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AN9321
Abstract: AN9322 an7254 AN7260
Text: RF3V49092, RF3S49092SM in t e ik il D a ta S h e e t 20A/10A, 12V, 0.060/0.140 Ohm, Logic Level, Complementary Power MOSFET These complementary power MOSFETs are manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated
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RF3V49092,
RF3S49092SM
0A/10A,
AN7254
AN7260.
RF3S49092SM
AN9321
AN9322
AN7260
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PDF
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p-channel pspice model
Abstract: AN9321 AN9322 MS-012AA RF1K49092 RF1K4909296
Text: RF1K49092 S E M I C O N D U C T O R January 1997 3.5A/2.5A, 12V, Avalanche Rated, Logic Level, Complementary LittleFET Enhancement Mode Power MOSFET Features Description • 3.5A, 12V N-Channel 2.5A, 12V (P-Channel) • UIS Rating Curve The RF1K49092 complementary power MOSFET is
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RF1K49092
RF1K49092
1e-30
61e-4
09e-6)
10e-3
99e-6)
82e-3
47e-7)
p-channel pspice model
AN9321
AN9322
MS-012AA
RF1K4909296
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PDF
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logic level complementary MOSFET
Abstract: No abstract text available
Text: RF1K49092 ÎSÎ HARRIS S E M I C O N D U CTÖR January 1997 3.5A/2.5A, 12V, Avalanche Rated, Logic Level, Complementary LittleFET Enhancement Mode Power MOSFET Features Description • 3.5A, 12V N-Channel 2.5A, 12V (P-Channel) • UIS Rating Curve The RF1K49092 complementary power MOSFET is
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RF1K49092
RF1K49092
TA49092.
Logic12V
050i2
S-012A
RF1K4909296.
MS-012AA
logic level complementary MOSFET
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AN9321
Abstract: No abstract text available
Text: in te r r ii RF1K49092 D ata S h e e t A u g u s t 19 99 3.SA/2.5A, 12V, 0.050/0.130 Ohm, Logic Level, Complementary LittleFET Power MOSFET This complementary power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits,
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RF1K49092
RF1K49092
AN9321
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PDF
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MiniMOS
Abstract: MMDF1300 MMDF1300R2 C2608
Text: MMDF1300 Power MOSFET 3 Amps, 25 Volts Complementary SO–8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the
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MMDF1300
r14525
MMDF1300/D
MiniMOS
MMDF1300
MMDF1300R2
C2608
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Untitled
Abstract: No abstract text available
Text: MMDF1300 Power MOSFET 3 Amps, 25 Volts Complementary SO−8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the
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MMDF1300
MMDF1300/D
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Untitled
Abstract: No abstract text available
Text: FDG8842CZ tm Complementary PowerTrench MOSFET Q1:30V,0.75A,0.4Ω; Q2:–25V,–0.41A,1.1Ω Features General Description Q1: N-Channel These N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell
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FDG8842CZ
FDG8842CZ
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Untitled
Abstract: No abstract text available
Text: MMDF2C03HD Power MOSFET 2 Amps, 30 Volts Complementary SO−8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the
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MMDF2C03HD
MMDF2C03HD/D
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FDG8842CZ
Abstract: SC70-6 marking 42
Text: FDG8842CZ tm Complementary PowerTrench MOSFET Q1:30V,0.75A,0.4Ω; Q2:–25V,–0.41A,1.1Ω Features General Description Q1: N-Channel These N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell
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FDG8842CZ
FDG8842CZ
SC70-6
marking 42
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f2c02
Abstract: No abstract text available
Text: MMDF2C02E Power MOSFET 2.5 Amps, 25 Volts Complementary SO−8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the
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MMDF2C02E
MMDF2C02E/D
f2c02
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PDF
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f2c02
Abstract: MOSFEt n channel for 800 volt 2 amp 2706 fet mosfet transistor 400 volts.100 amperes AN569 MMDF2C02E MMDF2C02ER2
Text: MMDF2C02E Power MOSFET 2.5 Amps, 25 Volts Complementary SO−8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the
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MMDF2C02E
MMDF2C02E/D
f2c02
MOSFEt n channel for 800 volt 2 amp
2706 fet
mosfet transistor 400 volts.100 amperes
AN569
MMDF2C02E
MMDF2C02ER2
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PDF
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Untitled
Abstract: No abstract text available
Text: MMDF2C03HD Power MOSFET 2 Amps, 30 Volts Complementary SO−8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the
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MMDF2C03HD
MMDF2C03HD/D
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d2c03
Abstract: No abstract text available
Text: MMDF2C03HD Preferred Device Power MOSFET 2 Amps, 30 Volts Complementary SO−8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the
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MMDF2C03HD
0E-05
0E-04
0E-03
0E-02
0E-01
d2c03
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PDF
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Untitled
Abstract: No abstract text available
Text: NTMD2C02R2 Preferred Device Power MOSFET 2 Amps, 20 Volts Complementary SO−8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the
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NTMD2C02R2
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D2C01
Abstract: No abstract text available
Text: MMDF2C01HD Preferred Device Power MOSFET 2 Amps, 12 Volts Complementary SO−8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the
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MMDF2C01HD
r14525
MMDF2C01HD/D
D2C01
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Untitled
Abstract: No abstract text available
Text: MMDF2C03HD Preferred Device Power MOSFET 2 Amps, 30 Volts Complementary SO–8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the
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MMDF2C03HD
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