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    LOGIC LEVEL GATE DRIVE MOSFET Search Results

    LOGIC LEVEL GATE DRIVE MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK421G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation

    LOGIC LEVEL GATE DRIVE MOSFET Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SNN01Z10D Logic Level N-Ch Power MOSFET Logic Level Gate Drive Application Features • Logic level gate drive  Max. RDS ON = 0.24 at VGS = 10V, ID = 0.5A  Low RDS(on) provides higher efficiency  ESD protected: 2000V (HBM ±1000V)  Halogen free and RoHS compliant device


    Original     		SNN01Z10D SNN01Z10 O-252 01Z10 17-JAN-12 KSD-T6O039-000 PDF

    Untitled

    Abstract: No abstract text available
    Text: AUIRLS4030 AUIRLSL4030 AUTOMOTIVE GRADE HEXFET Power MOSFET Features l l l l l l l l l Optimized for Logic Level Drive Advanced Process Technology Ultra Low On-Resistance Logic Level Gate Drive 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax


    Original     		AUIRLS4030 AUIRLSL4030 AUIRLS4030/AUIRLSL4030 PDF

    Untitled

    Abstract: No abstract text available
    Text: AUIRLS4030 AUIRLSL4030 AUTOMOTIVE GRADE HEXFET Power MOSFET Features l l l l l l l l l Optimized for Logic Level Drive Advanced Process Technology Ultra Low On-Resistance Logic Level Gate Drive 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax


    Original     		AUIRLS4030 AUIRLSL4030 AUIRLS4030/AUIRLSL4030 -TO262 PDF

    2N6901 JANTX

    Abstract: 2N6901 2N6901 JANTXV 2N6901 JANTX harris 2n6898 transistor h44 2n6800 2N6897 JANTXV 2N6897
    Text: Logic-Level Power MOSFETs File Number 2N6901 1877 N-Channel Logic Level Power MOS Field-Effect Transistors L2FET rDs(on): 1.4 fi Feature*: • Design optimized for 5-voit gate drive ■ Can be driven directly from QMOS, NMOS, TTL circuits ■ Compatible with automotive drive requirements


    OCR Scan     		2N6901 2N6901 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 MIL-S-19500/ 2N6901 JANTX 2N6901 JANTXV 2N6901 JANTX harris 2n6898 transistor h44 2N6897 JANTXV 2N6897 PDF

    Untitled

    Abstract: No abstract text available
    Text: NTE2984 Logic Level MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Logic Level Gate Drive D RDS on0 Specified at VGS = 4V & 5V D +175°C Operating Temperature D Fast Switching D Ease of Paralleling D Simple Drive Requirements


    Original     		NTE2984 PDF

    NTE2985

    Abstract: No abstract text available
    Text: NTE2985 Logic Level MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Logic Level Gate Drive D RDS on Specified at VGS = 4V & 5V D +175°C Operating Temperature D Fast Switching D Ease of Paralleling D Simple Drive Requirements


    Original     		NTE2985 NTE2985 PDF

    NTE2986

    Abstract: No abstract text available
    Text: NTE2986 Logic Level MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Logic Level Gate Drive D RDS on Specified at VGS = 4V & 5V D +175°C Operating Temperature D Fast Switching D Ease of Paralleling D Simple Drive Requirements


    Original     		NTE2986 NTE2986 PDF

    NTE2984

    Abstract: 110mJ
    Text: NTE2984 Logic Level MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Logic Level Gate Drive D RDS on Specified at VGS = 4V & 5V D +175°C Operating Temperature D Fast Switching D Ease of Paralleling D Simple Drive Requirements


    Original     		NTE2984 NTE2984 110mJ PDF

    Untitled

    Abstract: No abstract text available
    Text: AUIRLS4030-7P AUTOMOTIVE GRADE HEXFET Power MOSFET Features l l l l l l l l l Optimized for Logic Level Drive Advanced Process Technology Ultra Low On-Resistance Logic Level Gate Drive 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax


    Original     		AUIRLS4030-7P PDF

    Untitled

    Abstract: No abstract text available
    Text: HPLR3103, HPLU3103 Semiconductor 52A, 30V, 0.019 Ohm, N-Channel Logic Level, Power MOSFETs May 1998 Features Description • Logic Level Gate Drive These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


    Original     		HPLR3103, HPLU3103 HPLU3103 O-252AA 330mm EIA-481 PDF

    NTE2987

    Abstract: No abstract text available
    Text: NTE2987 Logic Level MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Avalanche Rugged Technology D Logic Level Gate Drive D RDS on = 0.09Ω Typ. at VGS = 5V D +175°C Operating Temperature D Fast Switching D Low Gate Charge D High Current Capability


    Original     		NTE2987 NTE2987 PDF

    Untitled

    Abstract: No abstract text available
    Text: HAJims HPLR3103, HPLU3103 S e m ico n d ucto r 7 52A, 30V, 0.019 Ohm, N-Channel Logic Level, Power MOSFETs May 1998 Features Description • Logic Level Gate Drive These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    OCR Scan     		HPLR3103, HPLU3103 T0-252AA 330mm PDF

    HUF76107P3

    Abstract: AN7260 AN7254 AN9321 AN9322 TB334 TC298
    Text: HUF76107P3 Data Sheet December 2001 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Features • Logic Level Gate Drive These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology


    Original     		HUF76107P3 HUF76107P3 AN7260 AN7254 AN9321 AN9322 TB334 TC298 PDF

    HUF76107P3

    Abstract: AN7254 AN7260 AN9321 AN9322 TB334 TC298
    Text: HUF76107P3 Data Sheet January 2003 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Features • Logic Level Gate Drive These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology


    Original     		HUF76107P3 HUF76107P3 AN7254 AN7260 AN9321 AN9322 TB334 TC298 PDF

    AN7254

    Abstract: AN9321 AN9322 HUF76105SK8 HUF76105SK8T MS-012AA TB334
    Text: HUF76105SK8 Data Sheet December 2001 5.5A, 30V, 0.050 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the


    Original     		HUF76105SK8 AN7254 AN9321 AN9322 HUF76105SK8 HUF76105SK8T MS-012AA TB334 PDF

    Untitled

    Abstract: No abstract text available
    Text: HUF76113T3ST Data Sheet June 2000 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET File Number 4388.3 Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced


    Original     		HUF76113T3ST PDF

    AN7254

    Abstract: AN9321 AN9322 HUF76132SK8 HUF76132SK8T MS-012AA TB334
    Text: HUF76132SK8 Data Sheet January 2003 11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the


    Original     		HUF76132SK8 AN7254 AN9321 AN9322 HUF76132SK8 HUF76132SK8T MS-012AA TB334 PDF

    AN9321

    Abstract: AN9322 HUF76113SK8 HUF76113SK8T MS-012AA TB334 TB337
    Text: HUF76113SK8 Data Sheet January 2003 6.5A, 30V, 0.030 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the


    Original     		HUF76113SK8 AN9321 AN9322 HUF76113SK8 HUF76113SK8T MS-012AA TB334 TB337 PDF

    n13 sot 23

    Abstract: 44E10 AN7254 AN7260 AN9321 AN9322 HUF76113T3ST TB334
    Text: HUF76113T3ST TM Data Sheet June 2000 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET File Number 4388.3 Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced


    Original     		HUF76113T3ST OT-223 330mm 100mm EIA-481 n13 sot 23 44E10 AN7254 AN7260 AN9321 AN9322 HUF76113T3ST TB334 PDF

    Untitled

    Abstract: No abstract text available
    Text: HUF76105DK8 Data Sheet October 1999 5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET File Number 4380.5 Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced


    Original     		HUF76105DK8 PDF

    Untitled

    Abstract: No abstract text available
    Text: HUF76107P3 Semiconductor Data Sheet February 1999 20A, 30 V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Features Logic Level Gate Drive These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology


    OCR Scan     		HUF76107P3 30e-3, 1e-12 1e-10 96e-6 1e6/50) PDF

    intersil 76131SK8

    Abstract: AN9321 HUF76131SK8 HUF76131SK8T MS-012AA TB334
    Text: HUF76131SK8 TM Data Sheet June 2000 10A, 30V, 0.013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET File Number 4396.5 Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced


    Original     		HUF76131SK8 mana15mm) MS-012AA 330mm EIA-481 intersil 76131SK8 AN9321 HUF76131SK8 HUF76131SK8T MS-012AA TB334 PDF

    Untitled

    Abstract: No abstract text available
    Text: HUF76121SK8 Data Sheet January 2003 8A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the


    Original     		HUF76121SK8 PDF

    TA7613

    Abstract: AN9321 AN9322 HUF76131SK8 HUF76131SK8T MS-012AA TB334
    Text: HUF76131SK8 Data Sheet December 2001 10A, 30V, 0.013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the


    Original     		HUF76131SK8 TA7613 AN9321 AN9322 HUF76131SK8 HUF76131SK8T MS-012AA TB334 PDF