adp190
Abstract: No abstract text available
Text: Logic Controlled, High-Side Power Switch ADP190 FEATURES TYPICAL APPLICATIONS CIRCUIT VIN + – ADP190 VOUT GND EN LEVEL SHIFTER LOAD 07874-001 Low RDSON of 105 mΩ @ 1.8 V Low input voltage range: 1.2 V to 3.6 V 500 mA continuous operating current Built-in level shift for control logic that can be operated by
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ADP190
ADP190
ADP190ACBZ-R7
ADP190CB-EVALZ1
11509-A
D07874-0-9/09
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adp190
Abstract: No abstract text available
Text: Logic Controlled, High-Side Power Switch ADP190 FEATURES TYPICAL APPLICATIONS CIRCUIT VIN + – ADP190 VOUT GND EN LEVEL SHIFTER LOAD 07874-001 Low RDSON of 105 mΩ @ 1.8 V Low input voltage range: 1.2 V to 3.6 V 500 mA continuous operating current Built-in level shift for control logic that can be operated by
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ADP190
ADP190
ADP190ACBZ-R7
ADP190CB-EVALZ1
11409-A
D07874-0-1/09
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PDF
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ADP195
Abstract: No abstract text available
Text: Logic Controlled, High-Side Power Switch with Reverse Current Blocking ADP195 Low RDSON of 65 mΩ @ 1.8 V Low input voltage range: 1.1 V to 3.6 V >1 A continuous operating current @ 85°C Built-in level shift for control logic that can be operated by 1.2 V logic
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ADP195
10309-A
ADP195ACBZ-R7
D08679-0-3/10
ADP195
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phd66nq03lt
Abstract: PHP/PHB/PHD66NQ03LT
Text: PHP/PHB/PHD66NQ03LT N-channel TrenchMOS logic level FET Rev. 05 — 15 April 2004 Product data 1. Product profile 1.1 Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • Low on-state resistance
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PHP/PHB/PHD66NQ03LT
O-220AB)
OT404
OT428
MBB076
phd66nq03lt
PHP/PHB/PHD66NQ03LT
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adp198
Abstract: No abstract text available
Text: FEATURES TYPICAL APPLICATION CIRCUITS Low RDSON of 50 mΩ @ 3.3 V WLCSP only Low input voltage range: 1.65 V to 6.5 V 1 A continuous operating current Built-in level shift for control logic that can be operated by 1.2 V logic Low 2.5 A quiescent current @ VIN = 2.8 V
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ADP198
SEP198ACBZ-R7
ADP198ACBZ-11-R7
ADP198ACPZ-R7
ADP198CP-EVALZ
6-06-2013-A
CP-8-10
D09484-0-6/13
adp198
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PDF
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Untitled
Abstract: No abstract text available
Text: FEATURES TYPICAL APPLICATION CIRCUITS Low RDSON of 50 mΩ @ 3.3 V WLCSP only Low input voltage range: 1.65 V to 6.5 V 1 A continuous operating current Built-in level shift for control logic that can be operated by 1.2 V logic Low 2.5 A quiescent current @ VIN = 2.8 V
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ADP198
ADP198ACBZ-R7
ADP198ACBZ-11-R7
ADP198ACPZ-R7
CP-8-10
ADP198CP-EVALZ
D09484-0-8/13
6-06-2013-A
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PDF
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adp198
Abstract: No abstract text available
Text: FEATURES TYPICAL APPLICATION CIRCUITS Low RDSON of 50 mΩ @ 3.3 V WLCSP only Low input voltage range: 1.65 V to 6.5 V 1 A continuous operating current Built-in level shift for control logic that can be operated by 1.2 V logic Low 2.5 A quiescent current @ VIN = 2.8 V
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ADP198
ADP198ACBZ-R7
ADP198ACBZ-11-R7
ADP198ACPZ-R7
CP-8-10
ADP198CP-EVALZ
D09484-0-4/12
com/ADP198
adp198
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PDF
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adp198
Abstract: CP810 D0948
Text: FEATURES TYPICAL APPLICATION CIRCUITS Low RDSON of 50 mΩ @ 3.3 V WLCSP only Low input voltage range: 1.65 V to 6.5 V 1 A continuous operating current Built-in level shift for control logic that can be operated by 1.2 V logic Low 2.5 A quiescent current @ VIN = 2.8 V
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ADP198
SEP198ACBZ-R7
ADP198ACBZ-11-R7
ADP198ACPZ-R7
ADP198CP-EVALZ
4-13-2012-A
CP-8-10
D09484-0-7/12
adp198
CP810
D0948
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adp198
Abstract: No abstract text available
Text: FEATURES TYPICAL APPLICATION CIRCUITS Low RDSON of 50 mΩ @ 3.3 V WLCSP only Low input voltage range: 1.65 V to 6.5 V 1 A continuous operating current Built-in level shift for control logic that can be operated by 1.2 V logic Low 2.5 A quiescent current @ VIN = 2.8 V
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ADP198
ADP198ACBZ-R7
ADP198ACBZ-11-R7
ADP198ACPZ-R7
CP-8-10
ADP198CP-EVALZ
D09484-0-6/12
4-13-2012-A
adp198
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PDF
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adp198
Abstract: No abstract text available
Text: FEATURES TYPICAL APPLICATION CIRCUITS Low RDSON of 50 mΩ @ 3.3 V WLCSP only Low input voltage range: 1.65 V to 6.5 V 1 A continuous operating current Built-in level shift for control logic that can be operated by 1.2 V logic Low 2.5 A quiescent current @ VIN = 2.8 V
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ADP198
CP-8-10)
10309-A
ADP198ACBZ-R7
ADP198ACPZ-R7
ADP198CP-EVALZ
CP-8-10
adp198
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PDF
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Untitled
Abstract: No abstract text available
Text: FEATURES TYPICAL APPLICATION CIRCUITS Low RDSON of 50 mΩ @ 3.3 V WLCSP only Low input voltage range: 1.65 V to 6.5 V 1 A continuous operating current Built-in level shift for control logic that can be operated by 1.2 V logic Low 2.5 A quiescent current @ VIN = 2.8 V
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ADP198
ADP198ACBZ-R7
ADP198ACBZ-11-R7
ADP198ACPZ-R7
ADP198CP-EVALZ
CP-8-10
D09484-0-7/12
com/ADP198
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PDF
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AUIPS2052
Abstract: AUIPS2051
Text: November, 14th 2011 Automotive grade AUIPS2051L/AUIPS2052G INTELLIGENT POWER LOW SIDE SWITCH Features Product Summary Over temperature shutdown Over current shutdown Active clamp Low current & logic level input ESD protection Optimized Turn On/Off for EMI
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AUIPS2051L/AUIPS2052G
AUIPS2051L/AUIPS2052G
AUIPS2052
AUIPS2051
OT223
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B90P06
Abstract: MTB9
Text: Spec. No. : C733J3 Issued Date : 2009.07.07 Revised Date : Page No. : 1/7 CYStech Electronics Corp. P-Channel Logic Level Enhancement Mode Power MOSFET MTB90P06J3 BVDSS -60V ID -10A RDSON MAX 90.8mΩ Features • Low Gate Charge • Simple Drive Requirement
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C733J3
MTB90P06J3
O-252
UL94V-0
B90P06
MTB9
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BB0P10
Abstract: MTBB0P10J3
Text: Spec. No. : C732J3 Issued Date : 2009.07.07 Revised Date : Page No. : 1/7 CYStech Electronics Corp. P-Channel Logic Level Enhancement Mode Power MOSFET MTBB0P10J3 BVDSS -100V ID -10A RDSON MAX 205mΩ Features • Low Gate Charge • Simple Drive Requirement
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C732J3
MTBB0P10J3
-100V
O-252
UL94V-0
BB0P10
MTBB0P10J3
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BA5N10
Abstract: MTBA5N10J3 TO-252 MOSFET p channel C731J3
Text: Spec. No. : C731J3 Issued Date : 2009.07.07 Revised Date : Page No. : 1/7 CYStech Electronics Corp. N -Channel Logic Level Enhancement Mode Power MOSFET MTBA5N10J3 BVDSS 100V ID 10A RDSON MAX 150mΩ Features • Low Gate Charge • Simple Drive Requirement
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C731J3
MTBA5N10J3
O-252
UL94V-0
BA5N10
MTBA5N10J3
TO-252 MOSFET p channel
C731J3
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FDC655BN
Abstract: No abstract text available
Text: FDC655BN Single N-Channel, Logic Level, PowerTrench MOSFET Features General Description • 6.3 A, 30 V. RDS ON = 25 mΩ @ VGS = 10 V RDS(ON) = 33 mΩ @ VGS = 4.5 V ■ Fast switching ■ Low gate charge ■ High performance trench technology for extremely low Rdson
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FDC655BN
FDC655BN
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08629
Abstract: No abstract text available
Text: Logic Controlled, High-Side Power Switch ADP194 FEATURES TYPICAL APPLICATIONS CIRCUIT ADP194 REVERSE POLARITY PROTECTION VOUT VIN + – GND EN ON LEVEL SHIFT AND SLEW RATE CONTROL LOAD 08629-001 Low RDSON of 80 mΩ at 1.8 V Low input voltage range: 1.1 V to 3.6 V
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ADP194
ADP194
ADP194ACBZ-R7
ADP194CB-EVALZ
0-08-2010-A
D08629-0-5/11
08629
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Untitled
Abstract: No abstract text available
Text: FDP5800 N-Channel Logic Level PowerTrench MOSFET tm 60V,80A, 6mΩ Features Applications • RDS on = 4.6mΩ (Typ.), VGS = 10V, ID = 80A • Motor/ Body Load Control • High performance trench technology for extermly low Rdson • Power Train Management
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FDP5800
O-220
100oC)
FDP5800
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PDF
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marking h3a
Abstract: 4DPA auips2041ltr
Text: November, 14th 2011 Automotive grade AUIPS2041 R (L) INTELLIGENT POWER LOW SIDE SWITCH Features Product Summary Over temperature shutdown Over current shutdown Active clamp Low current & logic level input ESD protection Optimized Turn On/Off for EMI Diagnostic on the input current
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AUIPS2041
16nated
OT223
marking h3a
4DPA
auips2041ltr
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PDF
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IPS2031R
Abstract: IPS2031 AEC-Q100-002 AEC-Q100
Text: December, 9th 2010 Automotive grade AUIPS2031R INTELLIGENT POWER LOW SIDE SWITCH Features • Product Summary Over temperature shutdown Over current shutdown Active clamp Low current & logic level input ESD protection Optimized Turn On/Off for EMI
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AUIPS2031R
AUIPS2031R
IPS2031R
IPS2031
AEC-Q100-002
AEC-Q100
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PDF
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fdp5800
Abstract: smart ups 750 circuit
Text: FDP5800 N-Channel Logic Level PowerTrench MOSFET tm 60V,80A, 6mΩ Features Applications • RDS on = 4.6mΩ (Typ.), VGS = 10V, ID = 80A • Motor/ Body Load Control • High performance trench technology for extermly low Rdson • Power Train Management
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FDP5800
O-220
100oC)
FDP5800
smart ups 750 circuit
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PDF
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IPS022G
Abstract: MS-012AA RESISTOR footprint dimension
Text: Data Sheet No.PD60203 IPS022G DUAL FULLY PROTECTED POWER MOSFET SWITCH Features • • • • • Product Summary Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection Description The IPS022G are fully protected dual low side SMART
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PD60203
IPS022G
IPS022G
165oC
5M-1994.
MS-012AA.
MS-012AA)
MS-012AA
RESISTOR footprint dimension
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IPS024G
Abstract: MS-012AC
Text: Data Sheet No.PD60204 IPS024G QUAD FULLY PROTECTED POWER MOSFET SWITCH Features • • • • • Product Summary Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection Description The IPS024G are fully protected quad low side SMART
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PD60204
IPS024G
IPS024G
165oC
MS-012AC)
MS-012AC
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E5 sot223
Abstract: AUIPS2052G AEC-Q100 AUIPS2051L
Text: March, 23rd 2009 Automotive grade AUIPS2051L/AUIPS2052G INTELLIGENT POWER LOW SIDE SWITCH Features • • • • • • • Product Summary Over temperature shutdown Over current shutdown Active clamp Low current & logic level input ESD protection Optimized Turn On/Off for EMI
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AUIPS2051L/AUIPS2052G
AUIPS2051L/AUIPS2052G
AUIPS2052
AUIPS2051
E5 sot223
AUIPS2052G
AEC-Q100
AUIPS2051L
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