2N6901
Abstract: No abstract text available
Text: N-CHANNEL LOGIC LEVEL POWER MOSFET 2N6901 • N-Channel Logic Level • Logic Level Power MOSFET Transistor In A Hermetic TO-39 Metal Package • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VDS VGS VDG ID ID IDM
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2N6901
O-205AF)
2N6901
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3055L transistor
Abstract: Mosfet Sot223
Text: [ /Title RFT30 55LE /Subject (2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET) /Author () /Keywords (Harris Sem,ico nductor, N-Channel, Logic Level, ESD Rated, Power MOSFET, SOT223) /Creator () /DOCIN RFT3055LE Semiconductor 2.0A, 60V, 0.150 Ohm, N-Channel,
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RFT3055LE
TA49158.
RFT3055LE
OT-223
330mm
EIA-481
3055L transistor
Mosfet Sot223
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AN7254
Abstract: AN7260 RFL1N12L RFL1N15L
Text: [ /Title RFL1N 12L, RFL1N1 5L /Subject (1A, 120V and 150V, 1.900 Ohm, Logic Level, N-Channel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, Logic Level, N-Channel Power MOSFETs, TO205AF) RFL1N12L, RFL1N15L Semiconductor 1A, 120V and 150V, 1.900 Ohm,
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O205AF)
RFL1N12L,
RFL1N15L
RFL1N12L
O-205AF
AN7254
AN7260.
AN7260
RFL1N12L
RFL1N15L
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PDF
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HUF76107P3
Abstract: AN7260 AN7254 AN9321 AN9322 TB334 TC298
Text: HUF76107P3 Data Sheet December 2001 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Features • Logic Level Gate Drive These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology
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HUF76107P3
HUF76107P3
AN7260
AN7254
AN9321
AN9322
TB334
TC298
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PDF
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HUF76107P3
Abstract: AN7254 AN7260 AN9321 AN9322 TB334 TC298
Text: HUF76107P3 Data Sheet January 2003 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Features • Logic Level Gate Drive These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology
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HUF76107P3
HUF76107P3
AN7254
AN7260
AN9321
AN9322
TB334
TC298
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PDF
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TC298
Abstract: No abstract text available
Text: HUF76107P3 Data Sheet October 1999 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Ordering Information PART NUMBER HUF76107P3 PACKAGE TO-220AB 4382.5 Features • Logic Level Gate Drive These N-Channel power MOSFETs are manufactured using
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HUF76107P3
TC298
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PDF
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AN7254
Abstract: AN9321 AN9322 HUF76105SK8 HUF76105SK8T MS-012AA TB334
Text: HUF76105SK8 Data Sheet December 2001 5.5A, 30V, 0.050 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the
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HUF76105SK8
AN7254
AN9321
AN9322
HUF76105SK8
HUF76105SK8T
MS-012AA
TB334
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PDF
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Untitled
Abstract: No abstract text available
Text: HUF76113T3ST Data Sheet June 2000 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET File Number 4388.3 Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced
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HUF76113T3ST
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AN7254
Abstract: AN9321 AN9322 HUF76132SK8 HUF76132SK8T MS-012AA TB334
Text: HUF76132SK8 Data Sheet January 2003 11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the
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HUF76132SK8
AN7254
AN9321
AN9322
HUF76132SK8
HUF76132SK8T
MS-012AA
TB334
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PDF
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AN9321
Abstract: AN9322 HUF76113SK8 HUF76113SK8T MS-012AA TB334 TB337
Text: HUF76113SK8 Data Sheet January 2003 6.5A, 30V, 0.030 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the
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HUF76113SK8
AN9321
AN9322
HUF76113SK8
HUF76113SK8T
MS-012AA
TB334
TB337
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PDF
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n13 sot 23
Abstract: 44E10 AN7254 AN7260 AN9321 AN9322 HUF76113T3ST TB334
Text: HUF76113T3ST TM Data Sheet June 2000 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET File Number 4388.3 Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced
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HUF76113T3ST
OT-223
330mm
100mm
EIA-481
n13 sot 23
44E10
AN7254
AN7260
AN9321
AN9322
HUF76113T3ST
TB334
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PDF
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Untitled
Abstract: No abstract text available
Text: HUF76105DK8 Data Sheet October 1999 5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET File Number 4380.5 Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced
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HUF76105DK8
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intersil 76131SK8
Abstract: AN9321 HUF76131SK8 HUF76131SK8T MS-012AA TB334
Text: HUF76131SK8 TM Data Sheet June 2000 10A, 30V, 0.013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET File Number 4396.5 Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced
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HUF76131SK8
mana15mm)
MS-012AA
330mm
EIA-481
intersil 76131SK8
AN9321
HUF76131SK8
HUF76131SK8T
MS-012AA
TB334
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PDF
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Untitled
Abstract: No abstract text available
Text: HUF76121SK8 Data Sheet January 2003 8A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the
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HUF76121SK8
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AN7254
Abstract: AN9321 AN9322 HUF76105SK8 HUF76105SK8T MS-012AA TB334
Text: HUF76105SK8 Data Sheet January 2003 5.5A, 30V, 0.050 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the
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Original
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HUF76105SK8
AN7254
AN9321
AN9322
HUF76105SK8
HUF76105SK8T
MS-012AA
TB334
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PDF
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76113
Abstract: AN7254 AN7260 AN9321 AN9322 HUF76113T3ST TB334
Text: HUF76113T3ST Data Sheet June 2003 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the
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HUF76113T3ST
76113
AN7254
AN7260
AN9321
AN9322
HUF76113T3ST
TB334
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PDF
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TA7613
Abstract: AN9321 AN9322 HUF76131SK8 HUF76131SK8T MS-012AA TB334
Text: HUF76131SK8 Data Sheet December 2001 10A, 30V, 0.013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the
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Original
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HUF76131SK8
TA7613
AN9321
AN9322
HUF76131SK8
HUF76131SK8T
MS-012AA
TB334
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PDF
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AN7254
Abstract: AN9321 AN9322 HUF76132SK8 HUF76132SK8T MS-012AA TB334
Text: HUF76132SK8 Data Sheet December 2001 11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the
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Original
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HUF76132SK8
AN7254
AN9321
AN9322
HUF76132SK8
HUF76132SK8T
MS-012AA
TB334
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PDF
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Untitled
Abstract: No abstract text available
Text: HUF76113T3ST Data Sheet January 2003 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the
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HUF76113T3ST
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PDF
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F10N12L
Abstract: F10N15L 10N15L F10N12 RFP10N15L F10N15 RFP10N12L 10n15 RFM10N12L RFM10N15L
Text: Logic-Level Power MOSFETs_ RFM10N12L, RFM10N15L, RFP10N12L, RFP10N15L File N u m be r 1559 Power Logic Level MOSFETs N-Channel Logic Level Power Field-Effect Transistors L2 FET TERMINAL DIAGRAM 10 A, 120 V — 150 V rDsioni: 0.3 f)
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OCR Scan
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RFM10N12L,
RFM10N15L,
RFP10N12L,
RFP10N15L
92CS-3374I
RFM10N12L
RFM10N15L
RFP10N12L
RFP10N15L*
F10N12L
F10N15L
10N15L
F10N12
RFP10N15L
F10N15
10n15
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PDF
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F15N05L
Abstract: F15N06L f15n05 RFP15N05L f15n RFM15N05L RFP15N06L RFM15N06L rca application notes RCA bipolar transistors
Text: Logic-Level Power MOSFETs File N u m be r 1558 RFM15N05L, RFM15N06L, RFP15N05L, RFP15N06L Power Logic Level MOSFETs N-Channel Logic Level Power Field-Effect Transistors L2 FET t e r m in a l d ia g r a m
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OCR Scan
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RFM15N05L,
RFM15N06L,
RFP15N05L,
RFP15N06L
RFM15N05L
RFM15N06L
RFP15N05L
RFP15N06L*
92CS-38IS0
F15N05L
F15N06L
f15n05
f15n
RFP15N06L
rca application notes
RCA bipolar transistors
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PDF
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F10N15L
Abstract: F10N12L RCA SOLID STATE F10N12L F10N12 RFM10N15L F10N15 RFP10N15L RFM10N12L RFP10N12L TA9530
Text: 387 5081 G E SOLID STATE 01 DE | 3A75Dfil Q01fll4M4 1 1 T'37 Logic-Level Power MOSFETs _ :_ RFM10N12L, RFM10N15L, RFP10N12L, RFP10N15L F ile N u m b e r 1559 Power Logic Level MOSFETs N-Channel Logic Level
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OCR Scan
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3fl75Dfil
RFM10N12L,
RFM10N15L,
RFP10N12L,
RFP10N15L
RFM10N12L
RFM10N15L
RFP10N12L
RFP10N15L*
F10N15L
F10N12L
RCA SOLID STATE F10N12L
F10N12
F10N15
TA9530
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PDF
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Untitled
Abstract: No abstract text available
Text: HUF76107P3 Semiconductor Data Sheet February 1999 20A, 30 V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Features Logic Level Gate Drive These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology
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OCR Scan
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HUF76107P3
30e-3,
1e-12
1e-10
96e-6
1e6/50)
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PDF
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Saber
Abstract: TB334 relay spice model mosfet 407 76113 Power MOSFET SOT-223 Power logic MOSFET SOT-223 power relay N-channel mosfet Logic Level N-Channel Power MOSFET HUF76113T3ST
Text: HUF76113T3ST interrii June 1999 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features Logic Level Gate Drive # This N-Channel power MOSFET is manufactured using the innovative &WMW W UltraFET process. This advanced * process technology achieves the
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OCR Scan
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HUF76113T3ST
TB334,
OT-223
Saber
TB334
relay spice model
mosfet 407
76113
Power MOSFET SOT-223
Power logic MOSFET SOT-223
power relay N-channel mosfet
Logic Level N-Channel Power MOSFET
HUF76113T3ST
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PDF
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