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    LOW FREQUENCY POWER TRANSISTOR Search Results

    LOW FREQUENCY POWER TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    LOW FREQUENCY POWER TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    trasistor

    Abstract: 2SB1465 NEC RELAY nec 5
    Text: DATA SHEET DARLINGTON TRASISTOR 2SB1465 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1465 is a mold power darlington transistor developed for low-frequency power amplifier and low-speed


    Original     		PDF 2SB1465 2SB1465 trasistor NEC RELAY nec 5

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET DARLINGTON TRASISTOR 2SB1465 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1465 is a mold power darlington transistor developed for low-frequency power amplifier and low-speed


    Original     		PDF 2SB1465 2SB1465

    2SD560

    Abstract: nec 2sd560 2sd560 equivalent NEC RELAY
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SD560 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD560 is a mold power transistor developed for low- ORDERING INFORMATION frequency power amplifiers and low-speed switching. This transistor is


    Original     		PDF 2SD560 2SD560 O-220AB O-220AB) nec 2sd560 2sd560 equivalent NEC RELAY

    mqc505-902

    Abstract: smd 78L05 mqc505 78L05 928 WN smd transistor Murata MQC505 mqc505 murata smd transistor 65D MQC505 Series SMD cf5
    Text: Philips Semiconductors Application note Low power single/dual frequency synthesizers: UMA1017M/1018M/1019M AM /1020M(AM) AN95102 Author: P. Hugues UMA1018M and UMA1020M/UMA1020AM low power dual frequency synthesizers UMA1017M and UMA1019M/UMA1019AM low power single frequency synthesizers


    Original     		PDF UMA1017M/1018M/1019M /1020M AN95102 UMA1018M UMA1020M/UMA1020AM UMA1017M UMA1019M/UMA1019AM TMT94008) mqc505-902 smd 78L05 mqc505 78L05 928 WN smd transistor Murata MQC505 mqc505 murata smd transistor 65D MQC505 Series SMD cf5

    88814

    Abstract: 52101 2SD1666 20343
    Text: Ordering number : ENN2034B 2SD1666 NPN Triple Diffused Planar Silicon Transistor 2SD1666 Low-Frequency Power Amplifier Applications Applications • Package Dimensions Low-frequency general-purpose power amplifier application. unit : mm 2041A [2SD1666] Features


    Original     		PDF ENN2034B 2SD1666 2SD1666] O-220ML 88814 52101 2SD1666 20343

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SD468 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER FEATURES *Low frequency power amplifier *Complement to 2SB562 1 TO-92NL 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified PARAMETER SYMBOL


    Original     		PDF 2SD468 2SB562 O-92NL QW-R211-003

    2sb562

    Abstract: 2SD468
    Text: UTC 2SB562 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER FEATURES *Low frequency power amplifier *Complement to 2SD468 1 TO-92NL 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified PARAMETER SYMBOL


    Original     		PDF 2SB562 2SD468 O-92NL QW-R211-004 2sb562 2SD468

    2SD468

    Abstract: transistor 2sd468 2SB562 2SB5621
    Text: UTC 2SD468 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER FEATURES *Low frequency power amplifier *Complement to 2SB562 1 TO-92NL 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified PARAMETER SYMBOL


    Original     		PDF 2SD468 2SB562 O-92NL QW-R211-003 2SD468 transistor 2sd468 2SB562 2SB5621

    2SB562

    Abstract: 2SD468
    Text: UTC 2SB562 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER FEATURES *Low frequency power amplifier *Complement to 2SD468 1 TO-92NL 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified PARAMETER SYMBOL


    Original     		PDF 2SB562 2SD468 O-92NL QW-R211-004 2SB562 2SD468

    2SD468

    Abstract: 2SD468L 2sD468 transistor pf 08a -pt 2SB562 2SB56 2SB5621
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD468 NPN SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER „ FEATURES 1 TO-92 * Low frequency power amplifier * Complement to 2SB562 1 TO-92NL *Pb-free plating product number: 2SD468L „ ORDERING INFORMATION Ordering Number


    Original     		PDF 2SD468 2SB562 O-92NL 2SD468L 2SD468-x-T92-B 2SD468L-x-T92-B 2SD468-x-T92-K 2SD468L-x-T92-K 2SD468-x-T9N-B 2SD468L-x-T9N-B 2SD468 2SD468L 2sD468 transistor pf 08a -pt 2SB562 2SB56 2SB5621

    2SD468

    Abstract: 2SB562
    Text: UTC 2SD468 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER FEATURES *Low frequency power amplifier *Complement to 2SB562 1 TO-92 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified PARAMETER SYMBOL VALUE


    Original     		PDF 2SD468 2SB562 QW-R201-050 2SD468 2SB562

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB647 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL  DESCRIPTION The UTC 2SB647 is a PNP epitaxial silicon transistor, which can be used as a low frequency power amplifier.  APPLICATION * Low frequency power amplifier


    Original     		PDF 2SB647 2SB647 2SB647L-x-T9N-B 2SB647G-x-T9N-B 2SB647L-x-T9N-K 2SB647G-x-T9N-K O-92NL QW-R211-010

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD667 NPN SILICON TRANSISTOR SILICON NPN EPITAXIAL  DESCRIPTION The UTC 2SD667 is a NPN epitaxial silicon transistor, which can be used as a low frequency power amplifier.  FEATURES * Low frequency power amplifier 


    Original     		PDF 2SD667 2SD667 2SD667L-x-T9N-B 2SD667G-x-T9N-B 2SD667L-x-T9N-K 2SD667G-x-T9N-K O-92NL QW-R211-019

    NEC semiconductor

    Abstract: 2sd2217 transistor PT 4500 C11531E NEC C11531E
    Text: DATA SHEET DARLINGTON POWER TRANSISTOR 2SD2217 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2217 is a mold power transistor developed for lowfrequency power amplifiers and low-speed switching.


    Original     		PDF 2SD2217 2SD2217 C11531E) NEC semiconductor transistor PT 4500 C11531E NEC C11531E

    2SB562

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB562 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER „ 1 FEATURES TO-92 * Low frequency power amplifier * Complement to 2SD468 1 „ TO-92NL ORDERING INFORMATION Order Number Lead Free Halogen Free 2SB562L-x-T92-B


    Original     		PDF 2SB562 2SD468 O-92NL 2SB562L-x-T92-B 2SB562G-x-T92-B 2SB562L-x-T92-K 2SB562G-x-T92-K 2SB562L-x-T9N-B 2SB562G-x-T9N-B 2SB562L-x-T9N-K 2SB562

    290A transistor

    Abstract: transistor 2sd667 2SD667
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD667 NPN SILICON TRANSISTOR SILICON NPN EPITAXIAL „ DESCRIPTION The UTC 2SD667 is a NPN epitaxial silicon transistor, which can be used as a low frequency power amplifier. „ FEATURES * Low frequency power amplifier „ ORDERING INFORMATION


    Original     		PDF 2SD667 2SD667 2SD667L-T9N-B 2SD667G-T9N-B 2SD667L-T9N-K 2SD667G-T9N-K O-92NL QW-R211-019 290A transistor transistor 2sd667

    2SD2400

    Abstract: 2SB1569
    Text: SavantIC Semiconductor Product Specification 2SD2400 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SB1569 ·High transition frequency ·Collector power dissipation: PC=20W TC=25 APPLICATIONS ·For low frequency power amplifier


    Original     		PDF 2SD2400 O-220F 2SB1569 O-220F) 30MHz 2SD2400 2SB1569

    2SB1569

    Abstract: 2SD2400
    Text: Inchange Semiconductor Product Specification 2SD2400 Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SB1569 ・High transition frequency ・Collector power dissipation: PC=20W TC=25℃ APPLICATIONS ・For low frequency power amplifier


    Original     		PDF 2SD2400 O-220F 2SB1569 O-220F) 30MHz 2SB1569 2SD2400

    NEC RELAY

    Abstract: 2sb146 NEC RELAY nec 5 2SB1465 C11531E NEC semiconductor
    Text: PRELIMINARY DATA SHEET DARLINGTON POWER TRANSISTOR 2SB1465 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1465 is a mold power transistor developed for low- PACKAGE DRAWING (UNIT: mm)


    Original     		PDF 2SB1465 2SB1465 C11531E) NEC RELAY 2sb146 NEC RELAY nec 5 C11531E NEC semiconductor

    marking AA 6-pin

    Abstract: SOT-23 X1 X2 marking code sot 23 pericom sot23-6 MARKING AA 6pin transistor code x1 PI6C3503 6pin MARKING code T
    Text: PI6C3503 Low Power Spread Spectrum Frequency Multiplier Description Features • Produces a 1 time spread spectrum clock signal from the input frequency. The PI6C3503 is a Low Power Frequency Multiplier with Spread Spectrum function to reduce EMI interference. The


    Original     		PDF PI6C3503 PI6C3503 13MHz 30MHz. 15MHz. MO-153F/AA PI6C3503TE PI6C3503ZCE marking AA 6-pin SOT-23 X1 X2 marking code sot 23 pericom sot23-6 MARKING AA 6pin transistor code x1 6pin MARKING code T

    2SA1882

    Abstract: 2SC4984 ITR04972 ITR04973
    Text: 2SA1882 / 2SC4984 Ordering number : EN4633B SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1882 / 2SC4984 Low-Frequency General-Purpose Amplifier Applications Applications • • • Low-frequency power amplifier applications.


    Original     		PDF 2SA1882 2SC4984 EN4633B 2SA1882 2SC4984 ITR04972 ITR04973

    2SB1087

    Abstract: No abstract text available
    Text: Inchange Semiconductor Product Specification 2SB1087 Silicon PNP Power Transistors DESCRIPTION ・With TO-220C package ・High DC current gain ・DARLINGTON APPLICATIONS ・For low frequency power amplifier and low speed power switching applications PINNING


    Original     		PDF 2SB1087 O-220C -30mA, -100V, 2SB1087

    2SC3944

    Abstract: 2SC3944A 2SC394
    Text: SavantIC Semiconductor Product Specification 2SC3944 2SC3944A Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·Complement to type 2SA1535/1535A ·High transition frequency APPLICATIONS ·For low-frequency driver and high power amplification


    Original     		PDF 2SC3944 2SC3944A O-220Fa 2SA1535/1535A O-220Fa) 2SC3944 2SC3944A 2SC394

    2SD1763

    Abstract: 2sd1763 equivalent 2SB1186 2sb1186 equivalent
    Text: SavantIC Semiconductor Product Specification 2SD1763 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·High breakdown voltage VCEO ·Complement to type 2SB1186 ·High transition frequency APPLICATIONS ·For low frequency power amplifier applications


    Original     		PDF 2SD1763 O-220Fa 2SB1186 O-220Fa) 2SD1763 2sd1763 equivalent 2SB1186 2sb1186 equivalent