Untitled
Abstract: No abstract text available
Text: KSK117 KSK117 Low Requency Low Noise AMP • HighYFS: 15mS TYP • High Input Impedance: IGSS= -1nA • Low Noise, NF =1dB (TYP) TO-92 1 1. Drain 2. Gate 3. Source Silicon N-channel Junction Fet Absolute Maximum Ratings Ta=25°C unless otherwise noted
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KSK117
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KSK117
Abstract: No abstract text available
Text: KSK117 KSK117 Low Requency Low Noise AMP • HighYFS: 15mS TYP • High Input Impedance: IGSS= -1nA • Low Noise, NF =1dB (TYP) TO-92 1 1. Drain 2. Gate 3. Source Silicon N-channel Junction Fet Absolute Maximum Ratings Ta=25°C unless otherwise noted
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KSK117
KSK117
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KSK117
Abstract: No abstract text available
Text: KSK117 KSK117 Low Requency Low Noise AMP • HighYFS: 15mS TYP • High Input Impedance: IGSS= -1nA • Low Noise, NF =1dB (TYP) TO-92 1 1. Source 2. Gate 3. Drain Silicon N-channel Junction Fet Absolute Maximum Ratings Ta=25°C unless otherwise noted
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KSK117
KSK117
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Untitled
Abstract: No abstract text available
Text: KSK117 SILICON N-CHANNEL JUNCTION FET LOW REQUENCY LOW NOISE AMP TO-92 HighYfs: 15ms TYP High Input Impedance: IGSS= -1nA Low Noise, NF =1dB (TYP) ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Symbol VGDS IG PC TJ T STG Gate-Drain Voltage Gate-Current
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KSK117
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2SK1842
Abstract: No abstract text available
Text: Silicon Junction FETs Small Signal 2SK1842 Silicon N-channel junction FET Unit: mm For impedance conversion in low frequency For infrared sensor 0.40+0.10 –0.05 0.4±0.2 5˚ 2 1 (0.95) (0.95) 1.9±0.1 (0.65) • Low gate-source cutoff current IGSS • Low capacitance (Common source) Ciss , Coss , Crss
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2SK1842
2SK1842
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SK3666 Preliminary JFET N-CHANNEL JUNCTIN SILICON FET DESCRIPTION The UTC 2SK3666 is an N-channel junctin silicon FET, it uses UTC’s advanced technology to provide the customers with low IGSS and low CRSS. The UTC 2SK3666 is suitable for low-frequency general-purpose
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2SK3666
2SK3666
2SK3666G-AE3-R
OT-23
QW-R206-109
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"DUAL N-Channel JFET"
Abstract: ultra low igss pA 2n3955 transistor spice jfet idss 10 ma vp -3 transistor U402 transistor TO99 package jfet transistor monolithic dual jfet transistor
Text: LS840 LS841 LS842 LOW NOISE LOW DRIFT LOW CAPACITANCE MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES LOW NOISE en= 8nV/√Hz TYP. LOW LEAKAGE IG = 10pA TYP. LOW DRIFT |∆VGS1-2 /∆T|= 5µV/°C max. LOW OFFSET VOLTAGE IVGS1-2I= 2mV TYP.
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LS840
LS841
LS842
"DUAL N-Channel JFET"
ultra low igss pA
2n3955 transistor spice
jfet idss 10 ma vp -3
transistor U402
transistor TO99 package
jfet transistor
monolithic dual jfet transistor
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LS842
Abstract: LS840 LS841 MONOLITHIC DUAL N-CHANNEL JFET
Text: LS840 LS841 LS842 LOW NOISE LOW DRIFT LOW CAPACITANCE MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES LOW NOISE en= 8nV/√Hz TYP. LOW LEAKAGE IG = 10pA TYP. LOW DRIFT |∆VGS1-2 /∆T|= 5µV/°C max. LOW OFFSET VOLTAGE IVGS1-2I= 2mV TYP.
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LS840
LS841
LS842
-VGS85
LS842
MONOLITHIC DUAL N-CHANNEL JFET
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2SK170
Abstract: LSK170 ultra low idss 2SK170C JFET -40v LSK170C replacement 2sk170 2SK170 TO92 LSK389 equivalent lsk170a
Text: LSK170 ULTRA LOW NOISE LOW CAPACITANCE J-FET Replace discontinued Toshiba 2SK170 with LSK170 The 2SK170 / LSK170 is a 1nV/√Hz low capacitance JFET Optimized to provide low noise at both high and low frequency with a narrow range of IDSS and low capacitance. The 2SK170 / LSK170’s low noise to
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LSK170
2SK170
ultra low idss
2SK170C
JFET -40v
LSK170C
replacement 2sk170
2SK170 TO92
LSK389 equivalent
lsk170a
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Untitled
Abstract: No abstract text available
Text: LS840 LS841 LS842 LOW NOISE LOW DRIFT LOW CAPACITANCE MONOLITHIC DUAL N-CHANNEL JFET FEATURES LOW NOISE en=8nV/Hz TYP. LOW LEAKAGE IG=10pA TYP. LOW DRIFT I VGS1-2/TI=5µV/ºC max. LOW OFFSET VOLTAGE IVGS1-2I=2mV TYP. ABSOLUTE MAXIMUM RATINGS1 @ 25°C unless otherwise noted
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LS840
LS841
LS842
O-71/78
400mW
25-year-old,
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replacement 2sk170
Abstract: lsk170 2sk170 lsk389
Text: LSK170 ULTRA LOW NOISE LOW CAPACITANCE J-FET Replace discontinued Toshiba 2SK170 with LSK170 The 2SK170 / LSK170 is a 1nV/√Hz low capacitance JFET Optimized to provide low noise at both high and low frequency with a narrow range of IDSS and low capacitance. The 2SK170 / LSK170’s low noise to
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LSK170
2SK170
replacement 2sk170
lsk389
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Untitled
Abstract: No abstract text available
Text: LS840 LS841 LS842 LOW NOISE LOW DRIFT LOW CAPACITANCE MONOLITHIC DUAL N-CHANNEL JFET FEATURES LOW NOISE en=8nV/Hz TYP. LOW LEAKAGE IG=10pA TYP. LOW DRIFT I VGS1-2/TI=5µV/ºC max. LOW OFFSET VOLTAGE IVGS1-2I=2mV TYP. ABSOLUTE MAXIMUM RATINGS1 @ 25°C unless otherwise noted
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LS840
LS841
LS842
O-71/78
400mW
25-year-old,
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ultra low igss pA
Abstract: ultra low igss LS831 LS830 LS832 LS833
Text: LS830 LS831 LS832 LS833 ULTRA LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES ULTRA LOW DRIFT |∆VGS1-2 /∆T|= 5µV/°C max. ULTRA LOW LEAKAGE IG = 80fA TYP. LOW NOISE en= 70nV/√Hz TYP. LOW CAPACITANCE CISS= 3pf MAX.
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LS830
LS831
LS832
LS833
70nV/Hz
ultra low igss pA
ultra low igss
LS833
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ultra low igss pA mosfet
Abstract: jfet transistor 2n4391 "DUAL N-Channel JFET" ultra low Ciss jfet sstpad100 "spice" 2n4416 transistor spice jfet n channel ultra low noise 2N44 Ultra High Input Impedance N-Channel JFET Amplifier 2n3955 transistor spice
Text: LS830 LS831 LS832 LS833 ULTRA LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES ULTRA LOW DRIFT |∆VGS1-2 /∆T|= 5µV/°C max. ULTRA LOW LEAKAGE IG = 80fA TYP. LOW NOISE en= 70nV/√Hz TYP. LOW CAPACITANCE CISS= 3pf MAX.
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LS830
LS831
LS832
LS833
70nV/Hz
ultra low igss pA mosfet
jfet transistor 2n4391
"DUAL N-Channel JFET"
ultra low Ciss jfet
sstpad100 "spice"
2n4416 transistor spice
jfet n channel ultra low noise
2N44
Ultra High Input Impedance N-Channel JFET Amplifier
2n3955 transistor spice
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ULTRA LOW NOISE N-CHANNEL JFET
Abstract: Zener Diode 3v 400mW jfet n channel ultra low noise jfet transistor 2n4391 ultra low igss pA LS843 spice ultra low noise NPN transistor J210 spice Ultra High Input Impedance N-Channel JFET Amplifier "DUAL N-Channel JFET"
Text: LS843 LS844 LS845 ULTRA LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES ULTRA LOW NOISE en= 3nV/√Hz TYP. LOW LEAKAGE IG = 15pA TYPs. LOW DRIFT |∆VGS1-2 /∆T|= 5µV/°C max. ULTRA LOW OFFSET VOLTAGE ABSOLUTE MAXIMUM RATINGS NOTE 1
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LS843
LS844
LS845
ULTRA LOW NOISE N-CHANNEL JFET
Zener Diode 3v 400mW
jfet n channel ultra low noise
jfet transistor 2n4391
ultra low igss pA
LS843 spice
ultra low noise NPN transistor
J210 spice
Ultra High Input Impedance N-Channel JFET Amplifier
"DUAL N-Channel JFET"
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ultra low igss pA
Abstract: LS845 LS843 LS844 MONOLITHIC DUAL N-CHANNEL JFET SSG11
Text: LS843 LS844 LS845 ULTRA LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES ULTRA LOW NOISE en= 3nV/√Hz TYP. LOW LEAKAGE IG = 15pA TYPs. LOW DRIFT |∆VGS1-2 /∆T|= 5µV/°C max. ULTRA LOW OFFSET VOLTAGE ABSOLUTE MAXIMUM RATINGS NOTE 1
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LS843
LS844
LS845
ultra low igss pA
LS845
MONOLITHIC DUAL N-CHANNEL JFET
SSG11
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mosfet motor dc 48v
Abstract: mosfet low vgs OM6218SP1 mosfet Rise time 2 ns 100 V
Text: OM6218SP1 DUAL 60V, LOW RDS on POWER MOSFET IN LOW PROFILE PLASTIC PACKAGE Dual Uncommitted Power MOSFET N-Channel, 60V, .018 RDS(on) FEATURES • • • • • Two Uncommitted MOSFETs In One Package Isolated Low Profile Package Low RDS(on) Low Conductive Loss/Low Gate Charge
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OM6218SP1
300msec,
mosfet motor dc 48v
mosfet low vgs
OM6218SP1
mosfet Rise time 2 ns 100 V
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ultra low igss pA
Abstract: No abstract text available
Text: LS830 LS831 LS832 LS833 ULTRA LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET FEATURES ULTRA LOW DRIFT │ΔVGS1-2/ΔT│= 5µV/ºC max. ULTRA LOW NOISE IG=80fA TYP. LOW NOISE en=70nV/√Hz TYP. LOW CAPACITANCE CISS=3pf max. ABSOLUTE MAXIMUM RATINGS NOTE 1
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LS830
LS831
LS832
LS833
70nV/â
25-year-old,
ultra low igss pA
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LS845
Abstract: No abstract text available
Text: LS843 LS844 LS845 ULTRA LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET FEATURES ULTRA LOW NOISE en=3nV/Hz TYP. LOW LEAKAGE IG=15pA TYPs. LOW DRIFT I VGS1-2/TI=5µV/ºC max. ULTRA LOW OFFSET VOLTAGE IVGS1-2I=1mV max. ABSOLUTE MAXIMUM RATINGS SOIC-A TO-71
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LS843
LS844
LS845
OT-23
400mW
25-year-old,
LS845
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Untitled
Abstract: No abstract text available
Text: LS843 LS844 LS845 ULTRA LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET FEATURES ULTRA LOW NOISE en=3nV/Hz TYP. LOW LEAKAGE IG=15pA TYPs. LOW DRIFT I VGS1-2/TI=5µV/ºC max. ULTRA LOW OFFSET VOLTAGE IVGS1-2I=1mV max. ABSOLUTE MAXIMUM RATINGS SOIC-A TO-71
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LS843
LS844
LS845
OT-23
400mW
25-year-old,
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Untitled
Abstract: No abstract text available
Text: 3N190 3N191 P-CHANNEL DUAL MOSFET ENHANCEMENT MODE Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR INTERSIL 3N190 & 3N191 IGSS ≤ ±10pA LOW GATE LEAKAGE CURRENT Crss ≤ 1.0pF LOW TRANSFER CAPACITANCE ABSOLUTE MAXIMUM RATINGS TO-78 TOP VIEW 1 case &
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3N190
3N191
3N190
300mW
525mW
25-year-old,
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2n4416 transistor spice
Abstract: low noise dual P-Channel JFET 3N190 P-Channel Depletion Mode FET dual gate n-channel mosfet transistor 2n3955 transistor spice single HIGH SPEED POWER MOSFET intersil JFET TO 18 3N191 SPICE n-channel mosfet transistor low power
Text: 3N190 3N191 P-CHANNEL DUAL MOSFET ENHANCEMENT MODE Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR INTERSIL 3N190 & 3N191 LOW GATE LEAKAGE CURRENT IGSS ≤ ±10pA LOW TRANSFER CAPACITANCE Crss ≤ 1.0pF 1 TO-78 BOTTOM VIEW C ABSOLUTE MAXIMUM RATINGS
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3N190
3N191
3N190
3N191
300mW
525mW
2n4416 transistor spice
low noise dual P-Channel JFET
P-Channel Depletion Mode FET
dual gate n-channel mosfet transistor
2n3955 transistor spice
single HIGH SPEED POWER MOSFET
intersil JFET TO 18
3N191 SPICE
n-channel mosfet transistor low power
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intersil dual p-channel mosfet to-78
Abstract: 3N190 3N191
Text: 3N190 3N191 P-CHANNEL DUAL MOSFET ENHANCEMENT MODE Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR INTERSIL 3N190 & 3N191 LOW GATE LEAKAGE CURRENT IGSS ≤ ±10pA LOW TRANSFER CAPACITANCE Crss ≤ 1.0pF 1 TO-78 BOTTOM VIEW C ABSOLUTE MAXIMUM RATINGS
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3N190
3N191
3N190
300mW
525mW
intersil dual p-channel mosfet to-78
3N191
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Untitled
Abstract: No abstract text available
Text: OM6218SP1 DUAL 60V, LOW RDS on POWER MOSFET IN LOW PROFILE PLASTIC PACKAGE Dual U n com m itte d Power MOSFET N-Channel. 60V. .018U Rosfon) FEATURES Two Uncommitted MOSFETs In One Package Isolated Low Profile Package Low RDS(on) Low Conductive Loss/Low Gate Charge
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OCR Scan
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OM6218SP1
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