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    LOW NOISE TRANSISTOR Search Results

    LOW NOISE TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    LOW NOISE TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BFR380L3 Linear Low Noise Silicon Bipolar RF Transistor • High current capability and low noise figure for wide dynamic range • Collector design supports supply voltage up to 5V • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure 1.1 dB at 1.8 GHz


    Original     		PDF BFR380L3 AEC-Q101

    high performance audio preamplifier

    Abstract: 1512P SSM2019 variable gain audio preamplifier INA217 equivalent phantom power supply 48v THAT 1512 THAT 1510 INA163 INA217 SSM2017
    Text: Low-Noise, High Performance Audio Preamplifier IC THAT 1510, 1512 FEATURES APPLICATIONS • Low Noise: 1 nV/√Hz input noise 60dB gain 34 nV/√Hz input noise (0dB gain) (1512) • Differential Low Noise Preamplifiers • Low THD+N (full audio bandwidth):


    Original     		PDF 14-pin high performance audio preamplifier 1512P SSM2019 variable gain audio preamplifier INA217 equivalent phantom power supply 48v THAT 1512 THAT 1510 INA163 INA217 SSM2017

    1512

    Abstract: Input Stages Preamplifiers 1510/1512
    Text: Low-Noise, High Performance Audio Preamplifier IC THAT 1510, 1512 FEATURES APPLICATIONS • Low Noise: 1 nV/√Hz input noise 60dB gain 34 nV/√Hz input noise (0dB gain) (1512) • Differential Low Noise Preamplifiers • Low THD+N (full audio bandwidth):


    Original     		PDF 14-pin 1512 Input Stages Preamplifiers 1510/1512

    KTC3200

    Abstract: lowest noise audio NPN transistor ktc3200 KTc3200 BL lowest noise audio NPN transistor rg 625 TRANSISTOR BL 100 KTA1268
    Text: SEMICONDUCTOR KTC3200 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AUDIO AMPLIFIER APPLICATION. FEATURES B C The KTC3200 is a transistor for low frequency and low noise applications. A This device is designed to ower noise figure in the region of low signal


    Original     		PDF KTC3200 KTC3200 270Hz lowest noise audio NPN transistor ktc3200 KTc3200 BL lowest noise audio NPN transistor rg 625 TRANSISTOR BL 100 KTA1268

    Untitled

    Abstract: No abstract text available
    Text: Low-Noise, High Performance Audio Preamplifier IC THAT 1510, 1512 FEATURES APPLICATIONS • Low Noise: 1 nV/√Hz input noise 60dB gain 34 nV/√Hz input noise (0dB gain) (1512) • Differential Low Noise Preamplifiers • Low THD+N (full audio bandwidth):


    Original     		PDF 14-pin

    Untitled

    Abstract: No abstract text available
    Text: FPD7612P70 FPD7612P70 Low Noise High Frequency Packaged pHEMT LOW NOISE HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD7612P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT optimized for low noise, high frequency applications.


    Original     		PDF FPD7612P70 FPD7612P70 22dBm 85GHz 24GHz

    spice gummel

    Abstract: No abstract text available
    Text: BFR460L3 Low Noise Silicon Bipolar RF Transistor • For low voltage / low current applications • Ideal for VCO modules and low noise amplifiers • Low noise figure: 1.1 dB at 1.8 GHz • Excellent ESD performance typical value 1500V HBM • High fT of 22 GHz


    Original     		PDF BFR460L3 AEC-Q101 spice gummel

    Untitled

    Abstract: No abstract text available
    Text: BFP460 Low Noise Silicon Bipolar RF Transistor • General purpose low noise amplifier 3 for low voltage, low current applications 2 4 • High ESD robustness, typical 1500 V HBM 1 • Low minimum noise figure 1.1 dB at 1.8 GHz • High linearity: output compression point


    Original     		PDF BFP460 AEC-Q101 OT343

    FPD7612P70

    Abstract: 0805-X7R HEMT marking P 1005FHL InP HBT transistor low noise pseudomorphic HEMT rogers 4003 InP transistor HEMT DS090629 ATC0805X7R
    Text: FPD7612P70 FPD7612P70 Low Noise High Frequency Packaged pHEMT LOW NOISE HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD7612P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT optimized for low noise, high frequency applications.


    Original     		PDF FPD7612P70 FPD7612P70 22dBm 85GHz 24GHz 11GHz) 0805-X7R HEMT marking P 1005FHL InP HBT transistor low noise pseudomorphic HEMT rogers 4003 InP transistor HEMT DS090629 ATC0805X7R

    FPD6836P70

    Abstract: FPD6836P70SQ FPD6836P70SR mrs 317 36P7 LL1005FHL 0805X7R BC 945 transistor PHEMT marking code B fpd6836p
    Text: FPD6836P70 FPD6836P70 Low-Noise High-Frequency Packaged pHEMT LOW-NOISE HIGH-FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD6836P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT optimised for low-noise, high-frequency applications.


    Original     		PDF FPD6836P70 FPD6836P70 22dBm 18GHz 11GHz) 18GHz) FPD6836P70-AG FPD6836P70-AJ FPD6836P70SQ FPD6836P70SR mrs 317 36P7 LL1005FHL 0805X7R BC 945 transistor PHEMT marking code B fpd6836p

    KTC3200

    Abstract: KTc3200 BL KTA1268 rg 625 transistor ktc3200 BL-350
    Text: SEMICONDUCTOR KTC3200 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AUDIO AMPLIFIER APPLICATION. FEATURES B C The KTC3200 is a transistor for low frequency and low noise applications. A This device is designed to ower noise figure in the region of low signal


    Original     		PDF KTC3200 KTC3200 270Hz KTc3200 BL KTA1268 rg 625 transistor ktc3200 BL-350

    FPD6836P70

    Abstract: No abstract text available
    Text: FPD6836P70 FPD6836P70 Low-Noise High-Frequency Packaged pHEMT LOW-NOISE HIGH-FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD6836P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT optimised for low-noise, high-frequency applications.


    Original     		PDF FPD6836P70 FPD6836P70 22dBm 18GHz FPD6836P70-AG FPD6836P70-AJ FPD6836P70SQ

    Untitled

    Abstract: No abstract text available
    Text: BFR360L3 Low Noise Silicon Bipolar RF Transistor • Low voltage/ Low current operation • For low noise amplifiers • For Oscillators up to 3.5 GHz and Pout > 10 dBm • Low noise figure: 1.0 dB at 1.8 GHz • Pb-free RoHS compliant and halogen-free thin small


    Original     		PDF BFR360L3 AEC-Q101

    Micro-X marking "K"

    Abstract: low noise Micro-X marking "K" Micro-X Marking E RO4350B rogers HEMT marking G HEMT marking K GD-32 hemt low noise die Micro-X Marking v transistor "micro-x" "marking" 3
    Text: PRELIMINARY < Low Noise GaAs HEMT > MGF4941CL Micro-X type plastic package DESCRIPTION The MGF4941CL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=25.2GHz


    Original     		PDF MGF4941CL MGF4941CL 4000pcs Micro-X marking "K" low noise Micro-X marking "K" Micro-X Marking E RO4350B rogers HEMT marking G HEMT marking K GD-32 hemt low noise die Micro-X Marking v transistor "micro-x" "marking" 3

    GD-32

    Abstract: mgf4941al fet K 727
    Text: MITSUBISHI SEMICONDUTOR <GaAs FET> Dec./2007 MGF4941AL SUPER LOW NOISE InGaAs HEMT DESCRIPTION Outline Drawing The MGF4941AL super-low noise HEMT High Electron Mobility Transistor is designed for use in Ku band amplifiers. FEATURES Low noise figure @ f=12GHz


    Original     		PDF MGF4941AL MGF4941AL 12GHz GD-32 4000pcs GD-32 fet K 727

    FPD7612P70

    Abstract: PHEMT marking code a HEMT marking P InP transistor HEMT MIL-HDBK-263 Gan hemt transistor RFMD rfmd model marking code
    Text: FPD7612P70 FPD7612P70 Low Noise High Frequency Packaged pHEMT LOW NOISE HIGH FREQUENCY PACKAGED pHEMT RoHS Compliant Package: P70 Product Description Features The FPD7612P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT optimized for low noise, high frequency applications.


    Original     		PDF FPD7612P70 FPD7612P70 22dBm 85GHz 18GHz 11GHz) PHEMT marking code a HEMT marking P InP transistor HEMT MIL-HDBK-263 Gan hemt transistor RFMD rfmd model marking code

    BFR380T

    Abstract: GPS05996 TBD 135 Transistor
    Text: BFR380T NPN Silicon RF Transistor 3 Target Data • • • • High Current Capability and Low Noise Figure for Wide Dynamic Range Applications Low Voltage Operation Ideal for Low Phase Noise Oscillators up to 4 GHz Low Noise Figure : 1.4dB at 2.0GHz 2 1


    Original     		PDF BFR380T VPS05996 P-SC-75 GPS05996 BFR380T GPS05996 TBD 135 Transistor

    transistor 2sc2240

    Abstract: 2SC2240 120PI
    Text: LOW NOISE AUDIO AMPLIFIER APPLICATIONS. Unit in mm FEATURES: 5JMAX. The 2SC2240 is a transistor for low frequency and low noise applications. This device is designed to lower noise figure in the region of low signal source impedance, and to lower the pulse noise.


    OCR Scan     		PDF 2SC2240 100ft 100yA 100yA, transistor 2sc2240 120PI

    smd code marking TV sot23

    Abstract: SMD MARKING CODE RIA marking code P1R smd code marking sot23 SMD transistors marking code 2.F CE MARKING SOT-23 sot-23 MARKING CODE N C smd transistors BCF70 marking p1r
    Text: Low Noise SMD" Transistors Low Noise SMD Transistors Description Mechanical Data Philips Components low-noise transistors are optimized for operation on low level signals as required by audio and other amplifier circuits. All have guaranteed low-current


    OCR Scan     		PDF OT-23 BC849B BC849C BC850B BC850C BC859A BC859B BC859C BC860A smd code marking TV sot23 SMD MARKING CODE RIA marking code P1R smd code marking sot23 SMD transistors marking code 2.F CE MARKING SOT-23 sot-23 MARKING CODE N C smd transistors BCF70 marking p1r

    "Microphone Preamplifier"

    Abstract: Microphone Preamplifier high gain audio mixer bipolar audio preamplifier high performance audio preamplifier hi-fi preamplifier low voltage Microphone Preamplifier microphone preamplifier
    Text: Sound Pream plifier SP2 Low noise balanced input m icrophone pream plifier G en eral d escrip tio n The SP2 is a high perform ance low noise microphone preamplifier. Designed for professional audio m ixer w ith very low noise channels. F eatures Low noise bipolar transistors and input resistors


    OCR Scan     		PDF 100KHz Si110 220uF "Microphone Preamplifier" Microphone Preamplifier high gain audio mixer bipolar audio preamplifier high performance audio preamplifier hi-fi preamplifier low voltage Microphone Preamplifier microphone preamplifier

    KTC3200

    Abstract: KTc3200 BL rg 625 KTA1268 kta-1268
    Text: SEMICONDUCTOR TECHNICAL DATA KTC3200 EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AUDIO AMPLIFIER APPLICATION. FEATURES • The KTC3200 is a transistor for low frequency and low noise applications. This device is designed to lower noise figure in the region of low signal


    OCR Scan     		PDF KTC3200 KTC3200 100//A, 100juA, KTA1268. KTc3200 BL rg 625 KTA1268 kta-1268

    2SA847

    Abstract: 2SA847A knx-1 low noise preamplifier knx1
    Text: MITSUBISHI SEMICONDUCTOR <SMALL-SIGNAL TRANSISTOR 2SA847A FOR LOW FREQUENCY LOW NOISE AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA847A is a silicon PNP epitaxial type high voltage low frequency OUTLINE DRAWING *5 .6 M A X low noise transistor. It has low noise at super low frequency range,low pulse


    OCR Scan     		PDF 2SA847A 2SA847A -120V 150MHz t270Hz 270Hz 2SA847 knx-1 low noise preamplifier knx1

    Untitled

    Abstract: No abstract text available
    Text: PN2483, PN2484 LOW LEVEL, LOW NOISE NPN SILICON PLANAR TRANSISTORS FEATURES APPLICATIONS • High Breakdown Voltage BV^-gg . . . 6 0 V • Low Level, 'Low Noise Am plifier • High Gain hpg . . . 2 0 0 @ 500m>A ■ Audio Through High Frequency Ranges • Low Noise N.F. . . . 3 dB


    OCR Scan     		PDF PN2483, PN2484 O-92A N2484 BOXt9477

    Untitled

    Abstract: No abstract text available
    Text: Central" CMPT2484 Semiconductor Corp. NPN SILICON LOW NOISE TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT2484 type is an NPN silicon low noise transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low noise


    OCR Scan     		PDF CMPT2484 CMPT2484 OT-23 100fiA 200Hz