3n212
Abstract: No abstract text available
Text: 3N212 DUAL GATE MOSFET N-CHANNEL DEPLETION MODE DESCRIPTION: The ASI 3N212 is a Dual Gate Mosfet Designed for Low Noise Mixer Applications in VHF Receivers. FEATURES: • Integrated Gate Protection • High Conversion Gain PACKAGE STYLE TO-72 MAXIMUM RATINGS
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3N212
3N212
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3SK180
Abstract: No abstract text available
Text: Ordering number:ENN2129B N-Channel Silicon MOSFET Dual Gate 3SK180 High-Frequency General-Purpose Amplifier Applications Applications Package Dimensions • FM tuners and VHF tuners. unit:mm 2046A Features [3SK180] · High power gain and low noise figure.
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ENN2129B
3SK180
3SK180]
3SK180
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k 2129 MOSFET
Abstract: 3SK180
Text: Ordering number:ENN2129B N-Channel Silicon MOSFET Dual Gate 3SK180 High-Frequency General-Purpose Amplifier Applications Applications Package Dimensions • FM tuners and VHF tuners. unit:mm 2046A Features [3SK180] · High power gain and low noise figure.
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ENN2129B
3SK180
3SK180]
k 2129 MOSFET
3SK180
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Marking 2G2
Abstract: No abstract text available
Text: BG3123. 4 DUAL N-Channel MOSFET Tetrode 5 6 • Two gain controlled input stages for UHF and VHF -tuners e.g. NTSC, PAL • Optimized for UHF (amp. B) and VHF (amp. A) 2 • Integrated gate protection diodes 3 1 VPS05604 • High AGC-range, low noise figure, high gain
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BG3123.
BG3123
VPS05604
BG3123R
EHA07461
BG3123
BG3123R*
OT363
Marking 2G2
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BG3430R
Abstract: Marking G2 BCR108S
Text: BG3430R DUAL N-Channel MOSFET Tetrode Preliminary data • Low noise gain controlled input stages of 4 5 6 UHF and VHF tuners • Two AGC amplifiers in one single package 1 2 3 • Integrated gate protection diodes • High gain, low noise figure, high AGC-range
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BG3430R
OT363
BG3430R
Marking G2
BCR108S
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marking code g1s
Abstract: BCR108S BG3123 BG3123R mosfet tetrode amp marking 125 marking 5 rf amp
Text: BG3123. DUAL N-Channel MOSFET Tetrode • Two gain controlled input stages for UHF 4 5 6 and VHF -tuners e.g. NTSC, PAL 1 • Optimized for UHF (amp. B) and VHF (amp. A) 2 3 • Integrated gate protection diodes • High AGC-range, low noise figure, high gain
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BG3123.
BG3123
BG3123R
OT363
marking code g1s
BCR108S
BG3123
BG3123R
mosfet tetrode
amp marking 125
marking 5 rf amp
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Untitled
Abstract: No abstract text available
Text: BG3123. DUAL N-Channel MOSFET Tetrode • Two gain controlled input stages for UHF 4 5 6 and VHF -tuners e.g. NTSC, PAL • Optimized for UHF (amp. B) and VHF (amp. A) 1 2 3 • Integrated gate protection diodes • High AGC-range, low noise figure, high gain
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BG3123.
BG3123
BG3123R
OT363
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AGC-10
Abstract: BCR108S BG3123 BG3123R
Text: BG3123. DUAL N-Channel MOSFET Tetrode • Two gain controlled input stages for UHF 4 5 6 and VHF -tuners e.g. NTSC, PAL • Optimized for UHF (amp. B) and VHF (amp. A) 1 2 3 • Integrated gate protection diodes • High AGC-range, low noise figure, high gain
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BG3123.
BG3123
BG3123R
OT363
AGC-10
BCR108S
BG3123
BG3123R
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marking K1 sot363
Abstract: AGC-10 BG3123 BG3123R VPS05604 152V16
Text: BG3123. 4 DUAL N-Channel MOSFET Tetrode 5 6 • Two gain controlled input stages for UHF and VHF -tuners e.g. NTSC, PAL • Optimized for UHF (amp. B) and VHF (amp. A) 2 • Integrated gate protection diodes 3 1 VPS05604 • High AGC-range, low noise figure, high gain
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Original
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BG3123.
VPS05604
BG3123
BG3123R
EHA07461
OT363
BG3123R*
Feb-27-2004
marking K1 sot363
AGC-10
BG3123
BG3123R
VPS05604
152V16
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IG-14
Abstract: No abstract text available
Text: BG3123. DUAL N-Channel MOSFET Tetrode • Two gain controlled input stages for UHF 4 5 6 and VHF -tuners e.g. NTSC, PAL 1 • Optimized for UHF (amp. B) and VHF (amp. A) 2 3 • Integrated gate protection diodes • High AGC-range, low noise figure, high gain
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Original
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BG3123.
BG3123
BG3123R
EHA07461
OT363
IG-14
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Untitled
Abstract: No abstract text available
Text: BG3123. 4 DUAL N-Channel MOSFET Tetrode 5 6 • Two gain controlled input stages for UHF and VHF -tuners e.g. NTSC, PAL • Optimized for UHF (amp. B) and VHF (amp. A) 2 • Integrated gate protection diodes 3 1 VPS05604 • High AGC-range, low noise figure, high gain
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BG3123.
BG3123
VPS05604
BG3123R
EHA07461
BG3123
BG3123R*
OT363
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PDF
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KDS DATE CODE
Abstract: No abstract text available
Text: BG3140. DUAL N-Channel MOSFET Tetrode • Low noise gain controlled input stages of UHF4 5 6 and VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 1 2 3 • Integrated gate protection diodes • Low noise figure • High gain, high forward transadmittance
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BG3140.
BG3140
BG3140R
OT363
KDS DATE CODE
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MA2220
Abstract: No abstract text available
Text: BG3140. 4 DUAL N-Channel MOSFET Tetrode 5 6 • Low noise gain controlled input stages of UHFand VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 2 • Integrated gate protection diodes 3 1 VPS05604 • Low noise figure • High gain, high forward transadmittance
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BG3140.
BG3140
VPS05604
BG3140R
EHA07461
BG3140
OT363
MA2220
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PDF
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22100K
Abstract: No abstract text available
Text: BG3140. 4 5 DUAL N-Channel MOSFET Tetrode 6 • Low noise gain controlled input stages of UHFand VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 1 • Integrated gate protection diodes • Low noise figure 2 3 VPS05604 • High gain, high forward transadmittance
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BG3140.
BG3140
VPS05604
BG3140R
EHA07461
BG3140
OT363
22100K
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PDF
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Untitled
Abstract: No abstract text available
Text: BG3140. 4 DUAL N-Channel MOSFET Tetrode 5 6 • Low noise gain controlled input stages of UHFand VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 2 • Integrated gate protection diodes 3 1 VPS05604 • Low noise figure • High gain, high forward transadmittance
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BG3140.
BG3140
VPS05604
BG3140R
EHA07461
BG3140
OT363
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PDF
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G2 marking
Abstract: BG3140R
Text: BG3140. DUAL N-Channel MOSFET Tetrode • Low noise gain controlled input stages of UHF- 4 5 6 and VHF-tuners with 5V supply voltage 1 • Two AGC amplifiers in one single package 2 3 • Integrated gate protection diodes • Low noise figure • High gain, high forward transadmittance
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BG3140.
BG3140
BG3140R
OT363
G2 marking
BG3140R
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BG5120K
Abstract: BCR108S
Text: BG5120K Dual N-Channel MOSFET Tetrode Preliminary data • Low noise gain controlled input stages for UHF 4 5 6 and VHF -tuners e. g. NTSC, PAL • Two AGC amplifiers in one single package 1 2 3 • Integrated gate protection diodes • Low noise figure, high AGC-range
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BG5120K
OT363
BG5120K
BCR108S
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KYS 30-40
Abstract: BG5130R BCR108S FW-50
Text: BG5130R DUAL - N-Channel MOSFET Tetrode • Low noise gain controlled input 4 5 6 stages of UHF-and VHF - tuners 1 with 3V up to 5V supply voltage 2 3 • Integrated gate protection diodes • Low noise figure • High gain, high forward transadmittance • Improved cross modulation at gain reduction
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BG5130R
OT363
KYS 30-40
BG5130R
BCR108S
FW-50
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KYS 30-40
Abstract: BG5130R BCR108S
Text: BG5130R DUAL - N-Channel MOSFET Tetrode • Low noise gain controlled input 4 5 6 stages of UHF-and VHF - tuners with 3V up to 5V supply voltage 1 2 3 • Integrated gate protection diodes • Low noise figure • High gain, high forward transadmittance • Improved cross modulation at gain reduction
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BG5130R
OT363
KYS 30-40
BG5130R
BCR108S
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Untitled
Abstract: No abstract text available
Text: BG5120K Dual N-Channel MOSFET Tetrode • Low noise gain controlled input stages for UHF 4 5 6 and VHF -tuners e. g. NTSC, PAL • Two AGC amplifiers in one single package 1 2 3 • Integrated gate protection diodes • Low noise figure, high AGC-range • Improved cross modulation at gain reduction
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BG5120K
OT363
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BCR108S
Abstract: BG5120K k914
Text: BG5120K Dual N-Channel MOSFET Tetrode • Low noise gain controlled input stages for UHF 4 5 6 and VHF -tuners e. g. NTSC, PAL • Two AGC amplifiers in one single package 1 2 3 • Integrated gate protection diodes • Low noise figure, high AGC-range • Improved cross modulation at gain reduction
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BG5120K
OT363
BCR108S
BG5120K
k914
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PDF
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Untitled
Abstract: No abstract text available
Text: BG3230_BG3230R 4 5 DUAL N-Channel MOSFET Tetrode 6 • Low noise gain controlled input stages of UHFand VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 1 • Integrated stabilized bias network • Integrated gate protection diodes
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BG3230
BG3230R
BG3230
VPS05604
EHA07215
OT363
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PDF
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BCR108S
Abstract: BG3230 mosfet 2g2
Text: BG3230 DUAL N-Channel MOSFET Tetrode • Low noise gain controlled input stages of UHF4 5 6 and VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 1 2 3 • Integrated stabilized bias network • Integrated gate protection diodes
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Original
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BG3230
OT363
BCR108S
BG3230
mosfet 2g2
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PDF
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Untitled
Abstract: No abstract text available
Text: BG3230_BG3230R DUAL N-Channel MOSFET Tetrode • Low noise gain controlled input stages of UHF4 5 6 and VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 1 2 3 • Integrated stabilized bias network • Integrated gate protection diodes
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Original
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BG3230
BG3230R
OT363
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PDF
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