DM74AS157M
Abstract: DM74AS157N DM74AS158M DM74AS158N M16A N16A DM74AS157
Text: DM74AS157/DM74AS158 Quad 1 of 2 Line Data Selector/Multiplexer n Functionally and pin for pin compatible with Schottky, low power Schottky, and advanced low power Schottky TTL counterpart n Improved AC performance over Schottky, low power Schottky, and advanced low power Schottky
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DM74AS157/DM74AS158
AS157
DM74AS157M
DM74AS157N
DM74AS158M
DM74AS158N
M16A
N16A
DM74AS157
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DM74ALS048
Abstract: DM54ALS04BJ DM74ALS DM74ALS04BM DM74ALS04BN J14A M14A N14A
Text: Corporation DM54ALS04B/DM74ALS04B Hex Inverters General Description Advanced oxide-isolated, ion-implanted Schottky TTL process Functionally and pin for pin compatible with Schottky and low power Schottky TTL counterpart Improved AC performance over Schottky and low pow
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DM54ALS04B/DM74ALS04B
DM54ALS04B
DM74ALS04B
DM74ALS048
DM54ALS04BJ
DM74ALS
DM74ALS04BM
DM74ALS04BN
J14A
M14A
N14A
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Untitled
Abstract: No abstract text available
Text: R C H II- D S E M I C O N D U C T O R tm DM74 AS157/DM74AS158 Quad 1 of 2 Line Data Selector/Multiplexer General Description • Functionally and pin for pin compatible with Schottky, low power Schottky, and advanced low power Schottky TTL counterpart ■ Improved AC performance over Schottky, low power
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OCR Scan
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AS157/DM74AS158
AS157
AS158
AS157
DS006290-2
DS006290-3
V91-N
peen-91.
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power inverters free circuit diagram
Abstract: No abstract text available
Text: 157*158 National Ææ Semiconductor DM74AS157/DM74AS158 Quad 1 of 2 Line Data Selector/Multiplexer General Description • Advanced oxide-isolated, ion-implanted Schottky TTL process ■ Functionally and pin for pin compatible with Schottky, low power Schottky, and advanced low power Schottky
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DM74AS157/DM74AS158
AS157
AS158
DM74AS158
AS157
power inverters free circuit diagram
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1N5819 SOD-123
Abstract: Reverse polarity pulse plating 1N5819* diode 1N5819 SOD123 1N5819 1N5819-CA2-R 1N5819L 1N5819L-CA2-R QW-R601-008 A1N5819
Text: UNISONIC TECHNOLOGIES CO., LTD 1N5819 DIODE SCHOTTKY BARRIER DIODE FEATURES * Schottky barrier chip * Low power loss, high efficiency. * Low forward voltage drop. * High surge current capability. * For use in low voltage, high frequency inverters, free wheeling
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1N5819
OD-123
1N5819L
1N5819-CA2-R
1N5819L-CA2-R
QW-R601-008
1N5819 SOD-123
Reverse polarity pulse plating
1N5819* diode
1N5819 SOD123
1N5819
1N5819-CA2-R
1N5819L
1N5819L-CA2-R
A1N5819
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 1N5819 DIODE SCHOTTKY BARRIER DIODE FEATURES * Schottky barrier chip * Low power loss, high efficiency. * Low forward voltage drop. * High surge current capability. * For use in low voltage, high frequency inverters, free wheeling
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1N5819
OD-123
1N5819G-CA2-R
QW-R601-008
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1N5819* diode
Abstract: 1N5819 SOD-123 1N5819 diode 1N5819 SOD123 DIODE 1N5819 dc transistor r601 DIODE 3a sod-123 DIODE 1n5819 1N5819 1N5819L-CA2-R
Text: UNISONIC TECHNOLOGIES CO., LTD 1N5819 DIODE SCHOTTKY BARRIER DIODE FEATURES * Schottky barrier chip * Low power loss, high efficiency. * Low forward voltage drop. * High surge current capability. * For use in low voltage, high frequency inverters, free wheeling
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1N5819
OD-123
1N5819L-CA2-R
1N5819G-CA2-R
QW-R601-008
1N5819* diode
1N5819 SOD-123
1N5819 diode
1N5819 SOD123
DIODE 1N5819 dc
transistor r601
DIODE 3a sod-123
DIODE 1n5819
1N5819
1N5819L-CA2-R
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all diode 1n5817 List
Abstract: No abstract text available
Text: 1N5817–1N5819 Vishay Lite–On Power Semiconductor 1.0A Schottky Barrier Rectifiers Features D Schottky barrier chip D Guard ring die construction for transient protection D High surge capability D Low power loss, high efficiency D For use in low voltage, high frequency inverters,
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1N5817
1N5819
1N5818
1N581tances.
D-74025
24-Jun-98
all diode 1n5817 List
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Untitled
Abstract: No abstract text available
Text: G10100CTFW SCHOTTKY BARRIER RECTIFIERS FEATURES • Trench Schottky technology • Low power loss, high efficiency • Low forward drop voltage • For use in low voltage, high frequency inverters, free REVERSE VOLTAGE FORWARD CURRENT – 100 Volts – 10 Amperes
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G10100CTFW
ITO-220AB
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Untitled
Abstract: No abstract text available
Text: G40100CTFW SCHOTTKY BARRIER RECTIFIERS FEATURES • Trench Schottky technology • Low power loss, high efficiency • Low forward drop voltage • For use in low voltage, high frequency inverters, free REVERSE VOLTAGE FORWARD CURRENT – 100 Volts – 40 Amperes
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G40100CTFW
ITO-220AB
70grams
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g20100ctfw
Abstract: No abstract text available
Text: G20100CTFW SCHOTTKY BARRIER RECTIFIERS FEATURES • Trench Schottky technology • Low power loss, high efficiency • Low forward drop voltage • For use in low voltage, high frequency inverters, free REVERSE VOLTAGE FORWARD CURRENT – 100 Volts – 20 Amperes
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G20100CTFW
ITO-220AB
g20100ctfw
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Untitled
Abstract: No abstract text available
Text: G30100CTFW SCHOTTKY BARRIER RECTIFIERS FEATURES • Trench Schottky technology • Low power loss, high efficiency • Low forward drop voltage • For use in low voltage, high frequency inverters, free REVERSE VOLTAGE FORWARD CURRENT – 100 Volts – 30 Amperes
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G30100CTFW
ITO-220AB
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MARKING FZ
Abstract: SBL530 SBL545 SBL550 SBL560
Text: SBL530 - SBL560 5.0A SCHOTTKY BARRIER RECTIFIER LITEMZI y POWER SEMICONDUCTOR Features Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward
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OCR Scan
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SBL530
SBL560
MIL-STD-202,
SBL545
SBL550
300ns
DS23043
SBL530-SBL560
MARKING FZ
SBL545
SBL560
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SDB1080
Abstract: No abstract text available
Text: SDB1080PH Semiconductor Schottky Barrier Rectifier 80V, 10A POWER SCHOTTKY RECTIFIER Features Low forward voltage drop Low power loss and High efficiency Low leakage current High surge capacity Full lead Pb -free and RoHS compliant device
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SDB1080PH
O-220F-2L
SDB1080PH
KSD-D0Q018-001
SDB1080
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MBR1630
Abstract: MBR1660
Text: MBR1630 - MBR1660 VISHAY 16A SCHOTTKY BARRIER RECTIFIER LITEMZI y POWER SEMICONDUCTOR Features Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward
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OCR Scan
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MBR1630
MBR1660
MIL-STD-202,
DS23011
MBR1630-MBR1660
MBR1660
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3045PT
Abstract: 3040PT 3060PT MBR3030PT MBR3060PT
Text: MBR3030PT - MBR3060PT VISHAY 30A SCHOTTKY BARRIER RECTIFIER LITEMZI y POWER SEMICONDUCTOR Features Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward
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OCR Scan
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MBR3030PT
MBR3060PT
MIL-STD-202,
DS23017
3045PT
3040PT
3060PT
MBR3060PT
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mbr schottky
Abstract: 4050PT A4030P schottky rectifier mbr 4045PT MBR4030PT MBR4060PT Y10050
Text: MBR4030PT - MBR4060PT VISHAY 40A SCHOTTKY BARRIER RECTIFIER LITEMZI y POWER SEMICONDUCTOR Features Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward
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OCR Scan
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MBR4030PT
MBR4060PT
MIL-STD-202,
DS23019
mbr schottky
4050PT
A4030P
schottky rectifier mbr
4045PT
MBR4060PT
Y10050
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MBR730
Abstract: MBR760
Text: MBR730 - MBR760 VISHAY 7.5A SCHOTTKY BARRIER RECTIFIER LITEMZI y POWER SEMICONDUCTOR Features Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward
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OCR Scan
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MBR730
MBR760
MIL-STD-202,
DS23007
MBR730-MBR760
MBR760
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Untitled
Abstract: No abstract text available
Text: October 1994 DM74ALS157/DM74ALS158 Quad 1 of 2 Line Data Selector/Multiplexer • Advanced oxide-isolated, ion-implanted Schottky TTL process ■ Functionally and pin for pin compatible with Schottky and low power Schottky TTL counterpart ■ Improved AC performance over Schottky and low pow
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OCR Scan
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DM74ALS157/DM74ALS158
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PDF
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Date Code Marking STMicroelectronics diode S56
Abstract: No abstract text available
Text: STPS5L60 Power Schottky rectifier Features ● Negligible switching losses ● Low forward voltage drop for higher efficiency ● Low thermal resistance ● Avalanche capability specified A A K K Description Power Schottky rectifier suited for switch mode
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STPS5L60
STPS5L60S
DO-201AD
Date Code Marking STMicroelectronics diode S56
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Untitled
Abstract: No abstract text available
Text: SB8150DC – SB8200DC WTE POWER SEMICONDUCTORS Pb 8.0A HIGH VOLTAGE SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER Features Schottky Barrier Chip C Guard Ring Die Construction for Transient Protection Low Forward Voltage Drop Low Power Loss, High Efficiency
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SB8150DC
SB8200DC
PAK/TO-263
PAK/TO-263,
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Untitled
Abstract: No abstract text available
Text: SD320YS – SD3100YS WTE POWER SEMICONDUCTORS 3.0A DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features ! Schottky Barrier chip A C ! ! ! ! ! ! Guard Ring Die Construction B Low Profile Package D High Surge Current Capability Low Power Loss, High Efficiency
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SD320YS
SD3100YS
MIL-STD-750,
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SB16100DC
Abstract: SB1620DC
Text: SB1620DC – SB16100DC WTE POWER SEMICONDUCTORS Pb 16A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER Features ! Schottky Barrier Chip C ! Guard Ring Die Construction for A Transient Protection ! Low Forward Voltage Drop ! Low Power Loss, High Efficiency B
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SB1620DC
SB16100DC
PAK/TO-263
D2PAK/TO-263,
SB16100DC
SB1620DC
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SB8150DC
Abstract: SB8150DC-T3
Text: SB8150DC WTE POWER SEMICONDUCTORS Pb 8.0A HIGH VOLTAGE SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER Features ! Schottky Barrier Chip C ! Guard Ring Die Construction for A Transient Protection ! Low Forward Voltage Drop ! Low Power Loss, High Efficiency B
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SB8150DC
PAK/TO-263
D2PAK/TO-263,
SB8150DC
SB8150DC-T3
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