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    LOW VOLTAGE OUTPUT NPN SILICON EPITAXIAL PLANAR Search Results

    LOW VOLTAGE OUTPUT NPN SILICON EPITAXIAL PLANAR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    NFMJMPC156R0G3D Murata Manufacturing Co Ltd Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose Visit Murata Manufacturing Co Ltd
    NFM31PC276D0E3L Murata Manufacturing Co Ltd Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose Visit Murata Manufacturing Co Ltd
    NFMJMPL226R0G5D Murata Manufacturing Co Ltd Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose Visit Murata Manufacturing Co Ltd
    DCL542L01 Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=2:2) / Default Output Logic: Low / Output enable Visit Toshiba Electronic Devices & Storage Corporation
    DCL541L01 Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=3:1) / Default Output Logic: Low / Output enable Visit Toshiba Electronic Devices & Storage Corporation

    LOW VOLTAGE OUTPUT NPN SILICON EPITAXIAL PLANAR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    to390

    Abstract: 2SC4132 marking 82
    Text: Transistors SMD Type NPN Epitaxial Planar Silicon Transistors 2SC4132 Features High breakdown voltage Low collector output capacitance High transition frequency Ft=80MHz Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit collector-base voltage


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    2SC4132 80MHz) 40X40X0 30MHz to390 to390 2SC4132 marking 82 PDF

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    Abstract: No abstract text available
    Text: Transistors 2SD2074 Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter Unit: mm 2.5±0.1 0.8 • Low collector-emitter saturation voltage VCE(sat) • Low ON resistance Ron • High forward current transfer ratio hFE


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    2SD2074 PDF

    2SA1674

    Abstract: 2SC4391
    Text: Transistors 2SC4391 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1674 Unit: mm 6.9±0.1 4.0 2.5±0.1 0.8 • Features • Low collector-emitter saturation voltage VCE(sat) • High collector-emitter voltage (Base open) VCEO


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    2SC4391 2SA1674 2SA1674 2SC4391 PDF

    2SD2184

    Abstract: No abstract text available
    Text: Transistors 2SD2184 Silicon NPN epitaxial planar type For low-frequency output amplification Unit: mm 6.9±0.1 4.0 0.7 • High collector-emitter voltage Base open VCEO • Low collector-emitter saturation voltage VCE(sat) • Allowing supply with the radial taping


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    2SD2184 2SD2184 PDF

    2SD1302

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1302 Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter Unit: mm 4.0±0.2 • Low collector-emitter saturation voltage VCE(sat)


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    2002/95/EC) 2SD1302 2SD1302 PDF

    2SD1330

    Abstract: No abstract text available
    Text: Transistors 2SD1330 Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter Unit: mm 2.5±0.1 1.5 Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current


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    2SD1330 2SD1330 PDF

    2SD2210G

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2210G Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter • Features ■ Package • Low collector-emitter saturation voltage VCE(sat)


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    2002/95/EC) 2SD2210G 2SD2210G PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:EN1609D NPN Epitaxial Planar Silicon Transistor 2SC3591 High-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • Fast switching speed. · Low saturation voltage. · Adoption of MBIT process. unit:mm


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    EN1609D 2SC3591 2010C 2SC3591] O-220AB PDF

    EN1609D

    Abstract: No abstract text available
    Text: Ordering number:EN1609D NPN Epitaxial Planar Silicon Transistor 2SC3591 High-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • Fast switching speed. · Low saturation voltage. · Adoption of MBIT process. unit:mm


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    EN1609D 2SC3591 2010C 2SC3591] O-220AB EN1609D PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2210G Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter • Package • Low collector-emitter saturation voltage VCE(sat) • Low ON resistance Ron


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    2002/95/EC) 2SD2210G PDF

    2SD2210G

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2210G Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter • Package • Low collector-emitter saturation voltage VCE(sat) • Low ON resistance Ron


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    2002/95/EC) 2SD2210G 2SD2210G PDF

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    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2459G Silicon NPN epitaxial planar type For low-frequency output amplification • Package ■ Features • High collector-emitter voltage (Base open) VCEO • Low collector-emitter saturation voltage VCE(sat)


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    2002/95/EC) 2SD2459G PDF

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    Abstract: No abstract text available
    Text: Transistor 2SD2185 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB1440 Unit: mm 4.5±0.1 * Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 5


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    2SD2185 2SB1440 PDF

    2SD1328

    Abstract: No abstract text available
    Text: Transistors 2SD1328 Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 0.95 (0.95) 1.9±0.1 (0.65) • Low collector-emitter saturation voltage VCE(sat)


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    2SD1328 2SD1328 PDF

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    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2185G Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB1440G • Features ■ Package • Low collector-emitter saturation voltage VCE(sat)


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    2002/95/EC) 2SD2185G 2SB1440G PDF

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    Abstract: No abstract text available
    Text: Transistors 2SD1330 Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter Unit: mm Rating Unit Collector-base voltage Emitter open VCBO 25 V Collector-emitter voltage (Base open) VCEO 20 V Peak collector current


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    2SD1330 PDF

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    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5026G Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1890G • Package ■ Features • Low collector-emitter saturation voltage VCE(sat)


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    2002/95/EC) 2SC5026G 2SA1890G PDF

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    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2178 Silicon NPN epitaxial planar type For low-frequency output amplification Unit: mm • Low collector-emitter saturation voltage VCE(sat) • Large collector current IC


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    2002/95/EC) 2SD2178 PDF

    2SD2178

    Abstract: No abstract text available
    Text: Power Transistors 2SD2178 Silicon NPN epitaxial planar type Unit: mm For low-frequency output amplification • Low collector to emitter saturation voltage VCE sat • Large collector current IC 16.0±1.0 • Absolute Maximum Ratings Ta = 25°C Parameter


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    2SD2178 2SD2178 PDF

    2SD2457G

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2457G Silicon NPN epitaxial planar type For low-frequency output amplification • Package • High collector-emitter voltage (Base open) VCEO • Low collector power dissipation PC


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    2002/95/EC) 2SD2457G 2SD2457G PDF

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    Abstract: No abstract text available
    Text: Power Transistors 2SD2178 Silicon NPN epitaxial planar type Unit: mm For low-frequency output amplification • Low collector to emitter saturation voltage VCE sat • Large collector current IC 16.0±1.0 • Absolute Maximum Ratings Ta = 25°C Parameter


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    2SD2178 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2457G Silicon NPN epitaxial planar type For low-frequency output amplification • Package • High collector-emitter voltage (Base open) VCEO • Low collector power dissipation PC


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    2002/95/EC) 2SD2457G PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENN6798~[ NPN Epitaxial Planar Silicon Transistor EC3202C Muting Circuit Applications Features • Ultrasmall-sized package, facilitates miniaturization in end products. • Low output capacitance. • Low collector-to-emitter saturation voltage.


    OCR Scan
    ENN6798~ EC3202C EC3202C] E-CSP1008-4 IT02790 PDF

    2SB1439

    Abstract: 2SD2183 A985A
    Text: Power Transistors 2SD2183 2SD2183 Silicon NPN Epitaxial Planar Type • Package Dimensions AF Output Amplifier Complementary Pair with 2SB1439 ■ Features • High collector-em itter voltage VCeo • Low collector-em itter saturation voltage (VcEisati)


    OCR Scan
    2SD2183 2SB1439 2SB1439 2SD2183 A985A PDF