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    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. LP2305LT1G S-LP2305LT1G 30V P-Channel Enhancement-Mode MOSFET VDS= -30V RDS ON , Vgs@-10V, Ids@-4.2A = 70mΩ RDS(ON), Vgs@-4.5V, Ids@-4.0A = 85 mΩ RDS(ON), Vgs@-2.5V, Ids@-1.0A = 130mΩ 3 1 2 FEATURES Advanced trench process technology


    Original     		PDF LP2305LT1G S-LP2305LT1G AEC-Q101 236AB) LP2305LT3G S-LP2305LT3G 3000/Tape 10000/Tape

    SOT-23 marking 352 MOSFET

    Abstract: LP2305LT1G lp2305
    Text: LESHAN RADIO COMPANY, LTD. 30V P-Channel Enhancement-Mode MOSFET LP2305LT1G VDS= -30V RDS ON , Vgs@-10V, Ids@-4.2A = 70mΩ RDS(ON), Vgs@-4.5V, Ids@-4.0A = 85 mΩ RDS(ON), Vgs@-2.5V, Ids@-1.0A = 130mΩ 3 1 2 SOT– 23 (TO–236AB) FEATURES Advanced trench process technology


    Original     		PDF LP2305LT1G 236AB) 3000/Tape LP2305LT3G 10000/Tape OT-23 SOT-23 marking 352 MOSFET LP2305LT1G lp2305