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    LP2307LT1G

    Abstract: lp2307
    Text: LESHAN RADIO COMPANY, LTD. 16V P-Channel Enhancement-Mode MOSFET LP2307LT1G VDS= -16V RDS ON , Vgs@-4.5V, Ids@-4.7A = 70 mΩ 3 RDS(ON), Vgs@-2.5V, Ids@-1.0A = 110 mΩ Features 1 Advanced trench process technology 2 High Density Cell Design For Ultra Low On-Resistance


    Original     		LP2307LT1G 236AB) 3000/Tape LP2307LT3G 10000/Tape OT-23 LP2307LT1G lp2307 PDF

    LP2307LT1G

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. 16V P-Channel Enhancement-Mode MOSFET LP2307LT1G S-LP2307LT1G VDS= -16V RDS ON , Vgs@-4.5V, Ids@-4.7A = 70 mΩ RDS(ON), Vgs@-2.5V, Ids@-1.0A = 110 mΩ 3 Features Advanced trench process technology 1 High Density Cell Design For Ultra Low On-Resistance


    Original     		LP2307LT1G S-LP2307LT1G 236AB) AEC-Q101 3000/Tape LP2307LT3G S-LP2307LT3G 10000/Tape LP2307LT1G PDF

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. 16V P-Channel Enhancement-Mode MOSFET LP2307LT1G VDS= -16V RDS ON , Vgs@-4.5V, Ids@-4.7A = 70 mΩ 3 RDS(ON), Vgs@-2.5V, Ids@-1.0A = 110 mΩ Features 1 Advanced trench process technology 2 High Density Cell Design For Ultra Low On-Resistance


    Original     		LP2307LT1G 236AB) 3000/Tape LP2307LT3G 10000/Tape OT-23 PDF