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    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. 30V P-Channel Enhancement-Mode MOSFET VDS -30V I D V GS = -10V RDS(ON) (VGS = -10V) RDS(ON) (VGS = -4.5V) -4.1A < 70mΩ < 100m Ω LP3407LT1G 3 1 2 SOT– 23 (TO–236AB) FEATURES The LP3407LT1G uses advanced trench technology to provide


    Original     		PDF LP3407LT1G 236AB) LP3407LT1G 3000/Tape LP3407LT3G 10000/Tape OT-23

    LP3407LT1G

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. LP3407LT1G S-LP3407LT1G 30V P-Channel Enhancement-Mode MOSFET VDS -30V I D V GS = -10V RDS(ON) (VGS = -10V) RDS(ON) (VGS = -4.5V) -4.1A < 70mΩ < 100m Ω 3 1 2 FEATURES SOT– 23 (TO–236AB) The LP3407LT1G uses advanced trench technology to provide


    Original     		PDF LP3407LT1G S-LP3407LT1G 236AB) LP3407LT1G AEC-Q101 LP3407LT3G S-LP3407LT3G 3000/Tape