NX8350TS33-AZ
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Renesas Electronics Corporation
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271 to 1331 nm AlGaInAs MQW-DFB Laser Diode for 40 G BASE-LR4 Application |
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NX8350TS27-AZ
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Renesas Electronics Corporation
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271 to 1331 nm AlGaInAs MQW-DFB Laser Diode for 40 G BASE-LR4 Application |
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NX8350TS29-AZ
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Renesas Electronics Corporation
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271 to 1331 nm AlGaInAs MQW-DFB Laser Diode for 40 G BASE-LR4 Application |
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NX8350TS31-AZ
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Renesas Electronics Corporation
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271 to 1331 nm AlGaInAs MQW-DFB Laser Diode for 40 G BASE-LR4 Application |
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NX6350EP29-AZ
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Renesas Electronics Corporation
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270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB Laser Diode for 40GBASE-LR4 Application |
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