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    LS 9124 Search Results

    LS 9124 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PS9124-V-F3-AX Renesas Electronics Corporation High CMR, 10 Mbps Open Collector Output Type 5-PIN SOP (SO-5) Photocoupler Visit Renesas Electronics Corporation
    PS9124-F3-AX Renesas Electronics Corporation High CMR, 10 Mbps Open Collector Output Type 5-PIN SOP (SO-5) Photocoupler Visit Renesas Electronics Corporation
    8V19N491-24NLGI Renesas Electronics Corporation JESD204B/C Clock Jitter Attenuator Visit Renesas Electronics Corporation
    PS9124-AX Renesas Electronics Corporation High CMR, 10 Mbps Open Collector Output Type 5-PIN SOP (SO-5) Photocoupler, , / Visit Renesas Electronics Corporation
    ISL69124IRAZ-T7A Renesas Electronics Corporation Digital Dual Output, 4-Phase Configurable, VR13 PWM Controller Visit Renesas Electronics Corporation

    LS 9124 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    f7101

    Abstract: IRF7406
    Text: PD - 91247D IRF7406 HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance l P-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description l l S S S G A D 1 8 2 7 D 3 6 D 4 5 D VDSS = -30V RDS on = 0.045Ω


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    PDF 91247D IRF7406 EIA-481-1 f7101 IRF7406

    Untitled

    Abstract: No abstract text available
    Text: PD - 91247D IRF7406 HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance l P-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description l l S S S G A D 1 8 2 7 D 3 6 D 4 5 D VDSS = -30V RDS on = 0.045Ω


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    PDF 91247D IRF7406 EIA-481-1

    IRFPC40

    Abstract: SiHFPC40
    Text: IRFPC40, SiHFPC40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 600 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 60 Qgs (nC) 8.3 Qgd (nC) 30 Configuration Available • Repetitive Avalanche Rated 1.2 RoHS* • Isolated Central Mounting Hole


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    PDF IRFPC40, SiHFPC40 O-247 O-247 18-Jul-08 IRFPC40

    IRFPE30

    Abstract: No abstract text available
    Text: IRFPE30, SiHFPE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rated 800 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 9.6 Qgd (nC) 45 Configuration Available • Repetitive Avalanche Rated 3.0 • Isolated Central Mounting Hole


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    PDF IRFPE30, SiHFPE30 O-247 O-247 18-Jul-08 IRFPE30

    SiHFPC50LC

    Abstract: IRFPC50LC
    Text: IRFPC50LC, SiHFPC50LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 600 RDS(on) (Ω) VGS = 10 V 0.60 Qg (Max.) (nC) 84 Qgs (nC) 18 Qgd (nC) 36 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-247


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    PDF IRFPC50LC, SiHFPC50LC O-247 18-Jul-08 IRFPC50LC

    IRFPC40

    Abstract: SiHFPC40
    Text: IRFPC40, SiHFPC40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 600 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 60 Qgs (nC) 8.3 Qgd (nC) 30 Configuration Available • Repetitive Avalanche Rated 1.2 RoHS* • Isolated Central Mounting Hole


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    PDF IRFPC40, SiHFPC40 O-247 O-247 18-Jul-08 IRFPC40

    IRFPC50LC

    Abstract: SiHFPC50LC
    Text: IRFPC50LC, SiHFPC50LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 600 RDS(on) (Ω) VGS = 10 V 0.60 Qg (Max.) (nC) 84 Qgs (nC) 18 Qgd (nC) 36 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-247


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    PDF IRFPC50LC, SiHFPC50LC O-247 18-Jul-08 IRFPC50LC

    IRFPE40 equivalent

    Abstract: IRFPE40 IRFPE450
    Text: IRFPE40, SiHFPE40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 2.0 Available Qg (Max.) (nC) 130 • Isolated Central Mounting Hole Qgs (nC) 17 • Fast Switching


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    PDF IRFPE40, SiHFPE40 O-247 O-247 18-Jul-08 IRFPE40 equivalent IRFPE40 IRFPE450

    Untitled

    Abstract: No abstract text available
    Text: IRFPE30, SiHFPE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rated 800 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 9.6 Qgd (nC) 45 Configuration Available • Repetitive Avalanche Rated 3.0 • Isolated Central Mounting Hole


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    PDF IRFPE30, SiHFPE30 O-247 O-247 O-220 12-Mar-07

    IRFPE30

    Abstract: No abstract text available
    Text: IRFPE30, SiHFPE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rated 800 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 9.6 Qgd (nC) 45 Configuration Available • Repetitive Avalanche Rated 3.0 • Isolated Central Mounting Hole


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    PDF IRFPE30, SiHFPE30 O-247 O-247 18-Jul-08 IRFPE30

    IRFPC60LC

    Abstract: SiHFPC60LC IRFPC60LCPBF
    Text: IRFPC60LC, SiHFPC60LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 600 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 120 Qgs (nC) 29 Qgd (nC) 48 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION This new series of low charge Power MOSFETs achieve


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    PDF IRFPC60LC, SiHFPC60LC 18-Jul-08 IRFPC60LC IRFPC60LCPBF

    IRFPE30

    Abstract: No abstract text available
    Text: IRFPE30, SiHFPE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rated 800 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 9.6 Qgd (nC) 45 Configuration Available • Repetitive Avalanche Rated 3.0 • Isolated Central Mounting Hole


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    PDF IRFPE30, SiHFPE30 O-247 O-247 18-Jul-08 IRFPE30

    IRFPC60

    Abstract: IRFPC60 input SiHFPC60 ISD 3900
    Text: IRFPC60, SiHFPC60 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 600 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 210 Qgs (nC) 26 Qgd (nC) 110 Configuration Single D COMPLIANT Third generation Power MOSFETs from Vishay provide the


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    PDF IRFPC60, SiHFPC60 O-247 O-220 O-218 18-Jul-08 IRFPC60 IRFPC60 input ISD 3900

    IRFPC60LC

    Abstract: SiHFPC60LC
    Text: IRFPC60LC, SiHFPC60LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 600 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 120 Qgs (nC) 29 Qgd (nC) 48 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION This new series of low charge Power MOSFETs achieve


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    PDF IRFPC60LC, SiHFPC60LC 18-Jul-08 IRFPC60LC

    IRFPF30

    Abstract: SiHFPF30
    Text: IRFPF30, SiHFPF30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 10 Qgd (nC) 42 Configuration Available • Repetitive Avalanche Rated 3.7 • Isolated Central Mounting Hole


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    PDF IRFPF30, SiHFPF30 O-247 O-247 18-Jul-08 IRFPF30

    Untitled

    Abstract: No abstract text available
    Text: IRFPC50LC, SiHFPC50LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 600 RDS(on) (Ω) VGS = 10 V 0.60 Qg (Max.) (nC) 84 Qgs (nC) 18 Qgd (nC) 36 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-247


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    PDF IRFPC50LC, SiHFPC50LC 12-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: IRFPC60, SiHFPC60 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 600 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 210 Qgs (nC) 26 Qgd (nC) 110 Configuration Single D COMPLIANT Third generation Power MOSFETs from Vishay provide the


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    PDF IRFPC60, SiHFPC60 O-247 O-220 12-Mar-07

    IRFPF30

    Abstract: SiHFPF30
    Text: IRFPF30, SiHFPF30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 10 Qgd (nC) 42 Configuration Available • Repetitive Avalanche Rated 3.7 • Isolated Central Mounting Hole


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    PDF IRFPF30, SiHFPF30 O-247 O-247 18-Jul-08 IRFPF30

    Untitled

    Abstract: No abstract text available
    Text: IRFPF30, SiHFPF30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 10 Qgd (nC) 42 Configuration Available • Repetitive Avalanche Rated 3.7 • Isolated Central Mounting Hole


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    PDF IRFPF30, SiHFPF30 O-247 O-247 O-220 12-Mar-07

    irfpc50

    Abstract: MOSFET IRFpc50
    Text: IRFPC50, SiHFPC50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 600 RDS(on) (Ω) VGS = 10 V 0.60 Qg (Max.) (nC) 140 Qgs (nC) 20 Qgd (nC) 69 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole


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    PDF IRFPC50, SiHFPC50 O-247 O-247 O-220 12-Mar-07 irfpc50 MOSFET IRFpc50

    IRFPE50

    Abstract: 78A31
    Text: IRFPE50, SiHFPE50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 200 • Isolated Central Mounting Hole Qgs (nC) 24 • Fast Switching 110 • Ease of Paralleling Qgd (nC)


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    PDF IRFPE50, SiHFPE50 O-247 O-247 12-Mar-07 IRFPE50 78A31

    irfpc50

    Abstract: MOSFET IRFpc50 SiHFPC50
    Text: IRFPC50, SiHFPC50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 600 RDS(on) (Ω) VGS = 10 V 0.60 Qg (Max.) (nC) 140 Qgs (nC) 20 Qgd (nC) 69 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole


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    PDF IRFPC50, SiHFPC50 O-247 O-247 18-Jul-08 irfpc50 MOSFET IRFpc50

    Untitled

    Abstract: No abstract text available
    Text: Philips Components-Signetics D o c u m e n t No. 85 3 -0 0 5 8 91249 ECN No. Date o f Issu e N ovem ber 3, 1987 Product Specification S ta tu s NE/SA/SE5205 Wide-band high-frequency amplifier RF C o m m u n ic a tio n s DESCRIPTION The NE/SA/SE5205 is a high-frequency


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    PDF NE/SA/SE5205 600MHz. NE/SA/SE5205 24dBm 17dBm 100Mr

    ay-5-8100

    Abstract: AY5-8100 ay-3-8112 AY-3-8760 AY-3-8710 AY-3-8500 AY-3-8700-1 AY-5-8102 ay-3-0214 saa1024
    Text: IL EiJ ¡MICRO ELECTRONICS 1978 DATA CATALOG GENERAL IN S T R U M E N T C O R P O R A T IO N • M IC R O E L E C T R O N IC S SS.00 I"HIL I r'i E- Index e l e c t r o n ic s I I M icroprocessor • I RAMs ■ EAROMs ■ ROMs Keyboard Encoders/Character Generators


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