f7101
Abstract: IRF7406
Text: PD - 91247D IRF7406 HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance l P-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description l l S S S G A D 1 8 2 7 D 3 6 D 4 5 D VDSS = -30V RDS on = 0.045Ω
|
Original
|
PDF
|
91247D
IRF7406
EIA-481-1
f7101
IRF7406
|
Untitled
Abstract: No abstract text available
Text: PD - 91247D IRF7406 HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance l P-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description l l S S S G A D 1 8 2 7 D 3 6 D 4 5 D VDSS = -30V RDS on = 0.045Ω
|
Original
|
PDF
|
91247D
IRF7406
EIA-481-1
|
IRFPC40
Abstract: SiHFPC40
Text: IRFPC40, SiHFPC40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 600 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 60 Qgs (nC) 8.3 Qgd (nC) 30 Configuration Available • Repetitive Avalanche Rated 1.2 RoHS* • Isolated Central Mounting Hole
|
Original
|
PDF
|
IRFPC40,
SiHFPC40
O-247
O-247
18-Jul-08
IRFPC40
|
IRFPE30
Abstract: No abstract text available
Text: IRFPE30, SiHFPE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rated 800 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 9.6 Qgd (nC) 45 Configuration Available • Repetitive Avalanche Rated 3.0 • Isolated Central Mounting Hole
|
Original
|
PDF
|
IRFPE30,
SiHFPE30
O-247
O-247
18-Jul-08
IRFPE30
|
SiHFPC50LC
Abstract: IRFPC50LC
Text: IRFPC50LC, SiHFPC50LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 600 RDS(on) (Ω) VGS = 10 V 0.60 Qg (Max.) (nC) 84 Qgs (nC) 18 Qgd (nC) 36 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-247
|
Original
|
PDF
|
IRFPC50LC,
SiHFPC50LC
O-247
18-Jul-08
IRFPC50LC
|
IRFPC40
Abstract: SiHFPC40
Text: IRFPC40, SiHFPC40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 600 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 60 Qgs (nC) 8.3 Qgd (nC) 30 Configuration Available • Repetitive Avalanche Rated 1.2 RoHS* • Isolated Central Mounting Hole
|
Original
|
PDF
|
IRFPC40,
SiHFPC40
O-247
O-247
18-Jul-08
IRFPC40
|
IRFPC50LC
Abstract: SiHFPC50LC
Text: IRFPC50LC, SiHFPC50LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 600 RDS(on) (Ω) VGS = 10 V 0.60 Qg (Max.) (nC) 84 Qgs (nC) 18 Qgd (nC) 36 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-247
|
Original
|
PDF
|
IRFPC50LC,
SiHFPC50LC
O-247
18-Jul-08
IRFPC50LC
|
IRFPE40 equivalent
Abstract: IRFPE40 IRFPE450
Text: IRFPE40, SiHFPE40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 2.0 Available Qg (Max.) (nC) 130 • Isolated Central Mounting Hole Qgs (nC) 17 • Fast Switching
|
Original
|
PDF
|
IRFPE40,
SiHFPE40
O-247
O-247
18-Jul-08
IRFPE40 equivalent
IRFPE40
IRFPE450
|
Untitled
Abstract: No abstract text available
Text: IRFPE30, SiHFPE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rated 800 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 9.6 Qgd (nC) 45 Configuration Available • Repetitive Avalanche Rated 3.0 • Isolated Central Mounting Hole
|
Original
|
PDF
|
IRFPE30,
SiHFPE30
O-247
O-247
O-220
12-Mar-07
|
IRFPE30
Abstract: No abstract text available
Text: IRFPE30, SiHFPE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rated 800 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 9.6 Qgd (nC) 45 Configuration Available • Repetitive Avalanche Rated 3.0 • Isolated Central Mounting Hole
|
Original
|
PDF
|
IRFPE30,
SiHFPE30
O-247
O-247
18-Jul-08
IRFPE30
|
IRFPC60LC
Abstract: SiHFPC60LC IRFPC60LCPBF
Text: IRFPC60LC, SiHFPC60LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 600 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 120 Qgs (nC) 29 Qgd (nC) 48 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION This new series of low charge Power MOSFETs achieve
|
Original
|
PDF
|
IRFPC60LC,
SiHFPC60LC
18-Jul-08
IRFPC60LC
IRFPC60LCPBF
|
IRFPE30
Abstract: No abstract text available
Text: IRFPE30, SiHFPE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rated 800 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 9.6 Qgd (nC) 45 Configuration Available • Repetitive Avalanche Rated 3.0 • Isolated Central Mounting Hole
|
Original
|
PDF
|
IRFPE30,
SiHFPE30
O-247
O-247
18-Jul-08
IRFPE30
|
IRFPC60
Abstract: IRFPC60 input SiHFPC60 ISD 3900
Text: IRFPC60, SiHFPC60 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 600 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 210 Qgs (nC) 26 Qgd (nC) 110 Configuration Single D COMPLIANT Third generation Power MOSFETs from Vishay provide the
|
Original
|
PDF
|
IRFPC60,
SiHFPC60
O-247
O-220
O-218
18-Jul-08
IRFPC60
IRFPC60 input
ISD 3900
|
IRFPC60LC
Abstract: SiHFPC60LC
Text: IRFPC60LC, SiHFPC60LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 600 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 120 Qgs (nC) 29 Qgd (nC) 48 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION This new series of low charge Power MOSFETs achieve
|
Original
|
PDF
|
IRFPC60LC,
SiHFPC60LC
18-Jul-08
IRFPC60LC
|
|
IRFPF30
Abstract: SiHFPF30
Text: IRFPF30, SiHFPF30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 10 Qgd (nC) 42 Configuration Available • Repetitive Avalanche Rated 3.7 • Isolated Central Mounting Hole
|
Original
|
PDF
|
IRFPF30,
SiHFPF30
O-247
O-247
18-Jul-08
IRFPF30
|
Untitled
Abstract: No abstract text available
Text: IRFPC50LC, SiHFPC50LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 600 RDS(on) (Ω) VGS = 10 V 0.60 Qg (Max.) (nC) 84 Qgs (nC) 18 Qgd (nC) 36 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-247
|
Original
|
PDF
|
IRFPC50LC,
SiHFPC50LC
12-Mar-07
|
Untitled
Abstract: No abstract text available
Text: IRFPC60, SiHFPC60 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 600 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 210 Qgs (nC) 26 Qgd (nC) 110 Configuration Single D COMPLIANT Third generation Power MOSFETs from Vishay provide the
|
Original
|
PDF
|
IRFPC60,
SiHFPC60
O-247
O-220
12-Mar-07
|
IRFPF30
Abstract: SiHFPF30
Text: IRFPF30, SiHFPF30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 10 Qgd (nC) 42 Configuration Available • Repetitive Avalanche Rated 3.7 • Isolated Central Mounting Hole
|
Original
|
PDF
|
IRFPF30,
SiHFPF30
O-247
O-247
18-Jul-08
IRFPF30
|
Untitled
Abstract: No abstract text available
Text: IRFPF30, SiHFPF30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 10 Qgd (nC) 42 Configuration Available • Repetitive Avalanche Rated 3.7 • Isolated Central Mounting Hole
|
Original
|
PDF
|
IRFPF30,
SiHFPF30
O-247
O-247
O-220
12-Mar-07
|
irfpc50
Abstract: MOSFET IRFpc50
Text: IRFPC50, SiHFPC50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 600 RDS(on) (Ω) VGS = 10 V 0.60 Qg (Max.) (nC) 140 Qgs (nC) 20 Qgd (nC) 69 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole
|
Original
|
PDF
|
IRFPC50,
SiHFPC50
O-247
O-247
O-220
12-Mar-07
irfpc50
MOSFET IRFpc50
|
IRFPE50
Abstract: 78A31
Text: IRFPE50, SiHFPE50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 200 • Isolated Central Mounting Hole Qgs (nC) 24 • Fast Switching 110 • Ease of Paralleling Qgd (nC)
|
Original
|
PDF
|
IRFPE50,
SiHFPE50
O-247
O-247
12-Mar-07
IRFPE50
78A31
|
irfpc50
Abstract: MOSFET IRFpc50 SiHFPC50
Text: IRFPC50, SiHFPC50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 600 RDS(on) (Ω) VGS = 10 V 0.60 Qg (Max.) (nC) 140 Qgs (nC) 20 Qgd (nC) 69 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole
|
Original
|
PDF
|
IRFPC50,
SiHFPC50
O-247
O-247
18-Jul-08
irfpc50
MOSFET IRFpc50
|
Untitled
Abstract: No abstract text available
Text: Philips Components-Signetics D o c u m e n t No. 85 3 -0 0 5 8 91249 ECN No. Date o f Issu e N ovem ber 3, 1987 Product Specification S ta tu s NE/SA/SE5205 Wide-band high-frequency amplifier RF C o m m u n ic a tio n s DESCRIPTION The NE/SA/SE5205 is a high-frequency
|
OCR Scan
|
PDF
|
NE/SA/SE5205
600MHz.
NE/SA/SE5205
24dBm
17dBm
100Mr
|
ay-5-8100
Abstract: AY5-8100 ay-3-8112 AY-3-8760 AY-3-8710 AY-3-8500 AY-3-8700-1 AY-5-8102 ay-3-0214 saa1024
Text: IL EiJ ¡MICRO ELECTRONICS 1978 DATA CATALOG GENERAL IN S T R U M E N T C O R P O R A T IO N • M IC R O E L E C T R O N IC S SS.00 I"HIL I r'i E- Index e l e c t r o n ic s I I M icroprocessor • I RAMs ■ EAROMs ■ ROMs Keyboard Encoders/Character Generators
|
OCR Scan
|
PDF
|
|