78xx 79xx
Abstract: ICM555 TDA8844 TDA8842 ic TDA8842 lmc556 79xx voltage regulator uA4558 LM556 PWM tl494 motor
Text: INTEGRAL KOEA pn mfr case desc1 Altenate1 Alternate1-mfr IL1085 IK-Semi TO-220/252/263 Low Dropout Voltage Regulator LT1085 LT IL1084 IK-Semi TO-220/252/263 Low Dropout Voltage Regulator LT1084 LT LT IL1083 IK-Semi TO-220/252/263 Low Dropout Voltage Regulator
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IL1085
O-220/252/263
LT1085
IL1084
LT1084
IL1083
LT1083
IL9270N
78xx 79xx
ICM555
TDA8844
TDA8842
ic TDA8842
lmc556
79xx voltage regulator
uA4558
LM556 PWM
tl494 motor
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Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD SFR1020C DIODE U LT RA-FAST RECOV ERY RECT I FI ER DI ODES ̈ DESCRI PT I ON UTC SFR1020C is dual center tap rectifier suited for high frequency Switching Mode PowerSupplies applications. ̈ 1 FEAT U RES TO-220 * High Surge Current Capability
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SFR1020C
SFR1020C
O-220
SFR1020CL-TA3-T
SFR1020CG-TA3-T
QW-R601-004
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SAW07B0A
Abstract: SAW07D0A led light 230v circuit diagram 220v AC to 110v AC circuit diagram
Text: Z-Power LED X10490 Technical Data Sheet Specification SAWX7X0A Features • Connect in AC power with Bridge Diode • Power Saving • Long Life • Simplified B.O.M • Small design footprint • SMT solderbility • Lead Free product • RoHS compliant Description
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X10490
3000gf
SAW07B0A
SAW07D0A
led light 230v circuit diagram
220v AC to 110v AC circuit diagram
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LW T67C-S2U1-35
Abstract: T676-P1Q1-1 Q62703-Q6301 LO T676-Q2R2-24 Q62703Q4895 LA T676-Q1R2 Q62703-Q5026 Q62703-Q6349 Q62703Q4976 E675-U1V2-26-1
Text: LUMINESZENZDIODEN LIGHT EMITTING DIODES SMT-LED SMT-LED Package Type Emissionsfarbe Emission color λdom typ. [nm] Farbe der Lichtaustrittsfläche Color of light emitting area Hyper TOPLED ΦV [mlm] IV [mcd] at IF 2ϕ (typ.) Bestellnummer (50% IV) Ordering code
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T676-P1Q1-1
T676-Q1R2-1
T676-Q1R1-1
T676-R1S2-1
T676-Q2R2-24
T676-R2S2-24
T676-Q1R1-26
T676-R1S2-26
LW T67C-S2U1-35
Q62703-Q6301
LO T676-Q2R2-24
Q62703Q4895
LA T676-Q1R2
Q62703-Q5026
Q62703-Q6349
Q62703Q4976
E675-U1V2-26-1
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D0236
Abstract: FM modulators
Text: LT-3/94 EVAR EXPONENTIAL VARACTOR SERIES for 1H220 - 1M250 1T220 - 1T250 DO220 - D0250 FREQUENCYVOLTAGE LINEAR TUNING The MSI Series 220 EVAR exponential varactor tuning diodes feature a 7:1 minimum capacitance tuning ratio from 0.5 to 10 volt for wide
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LT-3/94
1H220
1M250
1T220
1T250
DO220
D0250
D0236
FM modulators
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DO250
Abstract: No abstract text available
Text: LT-3/94 DtfD EVAR EXPONENTIAL VARACTOR SERIES for 1M220 - 1M250 1T220 - 1T250 DO220 - DO250 FREQUENCY-VOLTAGE LINEAR TUNING electronics, The MSI Series 220 EVAR exponential varactor tuning diodes feature a 7;1 minimum capacitance tuning ratio from 0.5 to 10 volts for wide
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LT-3/94
1M220
1M250
1T220
1T250
DO220
DO250
MSI-123
DO250
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DO-220
Abstract: D0236 Capacitance Varactor Diode DO220 1H250 1T246 1t234 1X220 D0234 D0250
Text: r LT-3/94 EVAR EXPONENTIAL VARACTOR for 1M220 - 1H250 1T220 - 1T250 DO220 - D0250 FREQUENCY-VOLTAGE LINEAR TUNING The MSI Series 220 EVAR exponential varactor tuning diodes feature a 7:1 minimum capacitance tuning ratio from 0.5 to 10 volts for wide band tuning applications.
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LT-3/94
12Vdc
10uAdc
10Vdc
MSI-123
DO-220
D0236
Capacitance Varactor Diode
DO220
1H250
1T246
1t234
1X220
D0234
D0250
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DIODE w2x
Abstract: No abstract text available
Text: 15A 8 0 V Tjvt1 5 0 V Fully Molded sim ilar* TO-220 FSHS15A08 ttfl* 0 * ^ > $ —fc lté í± Nihon Inter Electronics Corporation Specification yr I Schottky Barrier Diode Application High Frequency Rectification ïK^CÆi'fê' I MAXIMUM RATINGS Ta=25°C: Unless otherwise specified
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80VTjw150V
O-220
FSHS15A08
FSHS15A08
20mVRMS
100kHz
FSHS15ATJ
UL94V-0f
UL94V-0
DIODE w2x
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Capacitance Varactor Diode
Abstract: MSI Electronics 1M250 D0224 1T25 1T220 D0234 D0246 1M220 1M224
Text: LT-3/94 D vD SD EVAR TM EXPONENTIAL VARACTOR SERIES for electronics FREQUENCY-VOLTAGE LINEAR TUNING 1M220 - 1M250 1T220 - XT250 D0220 - D025Q inc. 100 The MSI Series 220 EVAK exponential varactor tuning diodes feature a 7:1 minimum capacitance tuning ratio from 0.5 to 10 volts for wide
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I/T-3/94
1M220
1M250
1T220
XT250
D0220
D0250
12Vdc
10uAdc
10Vdc
Capacitance Varactor Diode
MSI Electronics
D0224
1T25
D0234
D0246
1M224
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODES 20 - 90Vo Its 20 - 30V O LT S Part Number •o A PAC KAG E SURFACE MOUNT M S flfttfe ERA82-004 *1 ERA83-004 *1 ERA81-004 *2 ERB83-004 *2 ERC81-004 *4 ERC81S-004 *4 ERC80-004 ERC62-004 ERC80M-004 ERC62M-004 AXIAL TO*220 TO-220F ,TQs22 F<5 ,
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ERA82-004
ERA83-004
ERA81-004
ERB83-004
ERC81-004
ERC81S-004
ERC80-004
ERC62-004
ERC80M-004
ERC62M-004
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LT 220 diode
Abstract: No abstract text available
Text: nixYS ' !. :-u r’ Thyristor Modules Thyristor/Diode Modules MCC 220 MCD 220 ^TRMS ^TAVM = 2 x 400 A = 2 x 250 A V RRM = 800 -1600 V v RSM V RRM v DSM v DRM V V Version 1 Version 1 900 1300 1500 1700 800 1200 1400 1600 MCC 220-08ÌO1 MCC 220-12io1 MCC 220-14io1
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220-12io1
220-14io1
220-16io1
4bflb22b
LT 220 diode
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Untitled
Abstract: No abstract text available
Text: SANSHA ELECTRIC MFG CO 5bE D 7T T 12M 3 DDDDS'ib 02fl • SEMJ - p diode M o n m .e DF £ 1O O A B PRELIMINARY ■ MAX I MUM RATINGS ' _ Unless other* 5se T j —25T2 Syabol Item R a tin g s U n it I D F 100A 8120 R e p e t i t i v e Peak R e v e rs e V o lt a g e
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102T2
50/80Hz,
A0514
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Untitled
Abstract: No abstract text available
Text: I n ter n a tio n a l 1N3305 S e m ic o n d u c to r , I n c . thru 50 WATT ZENER DIODES 1N3350 MAXIMUM RATINGS Operating Tem perature: Storage Tem perature: DC Power Dissipation: -65 °C to +175 °C -65 °C to +175 °C 50 Watts at 75 °C Power Derating: 0.5 W /°C above 75 °C
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1N3305
1N3350
1N3306
1N3307
1N3308
1N3309
1N3305
100037a
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Lpp 97
Abstract: transil 428 54-135
Text: transient voltage suppressors «TRANSIL» íí diodes de protection «TRANSIL» THOMSON-CSF 'R M @ V r m t»A 2,5 KW G LT G LT G LT G LT / 12 24 47 120 V) m in 12 24 47 120 m ax nom 350 W 1 ms expo. 5 5 5 5 @ V(BR>* (V) U nidirectional typ es / 15 30 60
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CB-33)
Lpp 97
transil 428
54-135
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Untitled
Abstract: No abstract text available
Text: Tem ic TZMC. TELEFU N K EN Semiconductors Silicon Epitaxial Planar Z Diodes Features • Very sharp reverse characteristic • L ow reverse current level • A vailable with tighter tolerances • Very high stability • L ow noise Applications Voltage stabilization
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300K/W
50mmx50mmxl
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Untitled
Abstract: No abstract text available
Text: D IO T E C D IC E L E C T R O N I C S CORP SflE D DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 Tel.: 310 767-1052 Fax: (310)767-7958 S ÔMTID? O O O Ol b â IbS HIDIX Data Sheet No.: FSDP-201-A " T - 0 3 - I S 2 A M P FA ST R E C O V E R Y SILICON DIODES
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FSDP-201-A
DO-15
DO-15,
DB25/W
DB25P/T
DB25P/W
O-220
O-247)
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diode lt 429
Abstract: 7V03 lts 542
Text: nixYS IXSN 80N60AU1 IGBT with Diode VC ES IC25 vY CE sat Combi Pack = 600 V = 160 A = 3V Short Circuit SOA Capability Preliminary data Maximum Ratings Symbol T est Conditions v CES ^ = 25°C to 150°C 600 V v CGR T j = 25°C to 150°C; RGE = 1 M ii 600 A
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80N60AU1
OT-227
E153432
diode lt 429
7V03
lts 542
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Untitled
Abstract: No abstract text available
Text: SEMTECH LT» 3h£ D • fil3 1 3 k t DDDD001 b ■ StIT ■pö'S'^ö t Ultrafast Recovery High Temperature Gallium Arsenide Diodes FEATURES • • • • • • High Operating Junction Temperature Ultra-Fast Recovery High Frequency Low Reverse Current High Surge
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DDDD001
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diode lt 436
Abstract: IRKT THYRISTOR THYRISTOR MODULE THYRISTOR 30A 300V L1385 irkt 350
Text: International I S Rectifier s e r ie s i r k .f h 2 FAST SCR I DIODE and SCR / SCR INT-A-PAK Power Modules Features • ■ ■ ■ ■ Fast turn-off thyristor Fast recovery diode High surge capability Electrically isolated baseplate 3000 V RMS isolating voltage
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D0201AD
Abstract: No abstract text available
Text: ¡LITE-ON INC ra ijj L 31E D 5531^7 0ÜG1ÔS4 *4 I LT N GaAs T-13/4 MODIFIED 1 ' LEA 50 INFRARED EMITTING DIODE LT E-2871/2871C FEATU RES • S E L E C T E D TO S P E C IF IC O N -L IN E IN T E N S IT Y A N D R A D IA N T IN T E N S IT Y . • LOW COST. • N A R R O W B EA M .
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S53b3k
T-13/4
LTE-2871/2871C
LTE-2871
D0-41and
D0-41L
201AD
553b3b7
D0201AD
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6at6 tube
Abstract: TUNG-SOL 7B6 6Q7 tube 6AT6 6q7gt
Text: 6AT6 TUNG-SOL D O U BLE-D IO D E TR IO D E MINIATURE TYPE i -4 MAX UN I POTENT I AL CATHODE r~ 6 .3 VOLTS 8 MAX. T-5-5 m/. HEATER Y' 0 . 3 AMPERE AC OR DC S MAX. W X ANY MOUNTING POSITION GLASS BULB BOTTOM VIEW M I N I A T U R E BUTTON 7 P I N BASE THE 6AT6 IS a COMBINED HIGH-MU VOLTAGE A M P L IFIE R AND DOUBLE-DIODE DETEC
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M8-210
6at6 tube
TUNG-SOL 7B6
6Q7 tube
6AT6
6q7gt
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LYE65F
Abstract: 5630 osram E656-AABB-26-1 Q65110A1852 LYE65F-BBCB-35-1-L E65B-AACA-24-1 Q65110A2352 2800 617 LA E63F-EAFA-24-1 E658-V1AE-1-1
Text: Light Emitting Diodes | Lumineszenzdioden Package Gehäuse Type Bezeichnung En-ission oolor En-issionsf3rbe *GOfr ty p [n m ]/ Color coordi nates x/y k. V | 2ç (ty p ) (£0% Orden ng Code Bes:e nummer [mlm] [mA] n 710 . 1800 1450 Q65110A2763 1120 . 2800
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E658-V1AE-1-1
E65S-AABB-1-1
LSE65B-V1BE-1-1
Q65110A2763
Q65110A2784
Q65110A2762
E656-AABB-24-1
E85S-EACA-24-1
E65B-AACA-24-1
Q65110A2349
LYE65F
5630 osram
E656-AABB-26-1
Q65110A1852
LYE65F-BBCB-35-1-L
Q65110A2352
2800 617
LA E63F-EAFA-24-1
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1n4874
Abstract: No abstract text available
Text: ZENER DIODES, 5 WATTS, DO-201AE PLASTIC PACKAGE P a rt Number Mamina Z en e r V aitage s tt„ Current Maximum Zener Im pedance Z*n i f at 1, roA Z,. (O hm s) Knee at Maximum R everes Leak age Current a t T . = 2 5 i>C V. ZtK (Ohms}- tV elW ) i i l i i l
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DO-201AE
1NS969
1N49S4
1N4955
1N4996
1n4874
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Diode LT 442
Abstract: No abstract text available
Text: Bulletin 12102 rev.B 07/97 International I R Rectifier SAFElR Series 20ETS.S INPUT RECTIFIER DIODE VF < 1V @ 10A 'fs m = Description/Features The 20ETS.S rectifier SAFElR series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation
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20ETS.
Diode LT 442
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