LT1460BCS3-10
Abstract: marking code LTGG LTGF marking code sot 23 MARK LTGG LTKD MARKING CODE ltbw LM 3937 LT1460BCS3-2 LT1521CS8-3 LTHS
Text: PACKAGE PACKAGE CROSSDIMENSIONS REFERENCE LCC METAL CAN CERDIP Ceramic Dual-In-Line METAL CANS SSOP Shrink Small Outline TSSOP Thin Shrink Small Outline SIDE BRAZED PACKAGE OUTLINE DESCRIPTION LTC NSC MOT TI LINFIN MAXIM 8-Lead Side Brazed Hermetic D8 D
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20-Lead
20-Lead
28-Lead
LT1613CS5
LT1615CS5
LT1615CS5-1
LT1617CS5
LT1617CS5-1
LT1761ES5-1
LT1761ES5-2
LT1460BCS3-10
marking code LTGG
LTGF marking code sot 23
MARK LTGG
LTKD MARKING CODE
ltbw
LM 3937
LT1460BCS3-2
LT1521CS8-3
LTHS
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFS17W NPN Silicon RF Transistor >For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Marking Ordering Code B F S 17W M Cs Pin Configuration Q62702-F1645 1 =B Package ro il m Type 3 =C SOT-323 Maximum Ratings of any single Transistor
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BFS17W
Q62702-F1645
OT-323
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Untitled
Abstract: No abstract text available
Text: i T u v m _ LT1762 Series TECHNOLOGY 150mA, Low Noise, LDO M icropower Regulators F€flTUR€S D C S C R IP TIO n • ■ ■ ■ ■ The LT 1762 series are micropower, low noise, low dropout regulators. The devices are capable of supplying 150mA of output cu rrent with a dropout voltage of 300mV.
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LT1762
150mA,
150mA
300mV.
OT-23
LTC1627
LT1761
100mA,
OT-23
LT1763
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HSP56
Abstract: PCT789
Text: VCY789 H S 1J 5 6 M odem The H EP56M odem is a high speed Host 5-gnal P ro cessila Modem MSP M odem 1'chip implementing I f l H V 34 protocols and 5GK tecäincHogv Several patents pending an the P C w /H S P Modem scftw are an d h ard w aie archi(ecuu'e The PCT7BS supports baseline
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95/05R2.
l30mWÂ
PCT789comes
HSP56
IfU-TV34
RGM/256K
32bia
22bis
9S355Ã
PCT789
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I203
Abstract: No abstract text available
Text: B ulletin 12037 11/94 International IQ R Rectifier s e r ie s 45L R , 150K / l / k s (R) STANDARD RECOVERY DIODES Stud Version Features 150A • A llo y d io d e ■ H ig h c u r r e n t c a r r y in g c a p a b il i t y ■ H ig h v o l t a g e r a t in g s u p to 1 0 0 0 V
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150K/
I203
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SGSP474
Abstract: No abstract text available
Text: 30E t • 7iai237 0030021 S ■ _ / = 7 S G S - T H O M S O N 5 T ? ' ,H t " SM S G S P 4 7 4 ^ 7 # [ÜDffi Q [E[L[i(g¥^(ó)iD(gÍ SG SP 475 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^DS(on) SGSP474 SGSP475 450 V 400 V 0.7 fi 0.55 fi
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7iai237
SGSP474
SGSP475
100kHz
0Q30Q33
SGSP474
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YG901C2
Abstract: T151 T930
Text: YG901 C2 5 a — K LOW LOSS SUPER HIGH • f t » - * » : Outline Drawings ED RECTIFIER I Features Insulated package by fully m o ld in g , • tevF Low V h- Connection Diagram Super high speed sw itching. • T V -*— r - W () : Applications <> ib
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YG901
t-150
e3TS30
l95t/R89
YG901C2
T151
T930
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SOT23 KJA
Abstract: No abstract text available
Text: SIEMENS BCR 135 NPN Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit * Built in bias resistor R1=2.2kiî, R2=47kft Marking Ordering Code Pin Configuration BCR 135 WJs 1 =B Package UJ II CNJ Q62702-C2257 CO II O Type
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47kft)
Q62702-C2257
OT-23
Resistan200
SOT23 KJA
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Untitled
Abstract: No abstract text available
Text: SIEMENS BDP947 NPN Silicon AF Power Transistors • For AF drivers and output stages . • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: BDP948, BDP950 PNP Pin Configuration II o 1= B II
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BDP947
BDP948,
BDP950
Q62702-D1337
OT-223
Q62702-D1335
B35bQ5
D121D27
235b05
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Untitled
Abstract: No abstract text available
Text: SIEMENS BSM300GA170DN2 E3166 IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Enlarged diode area • Package with insulated metal base plate • ^ G on.min = 5.6 Ohm 1c 1700V 440A UJ Type BSM300GA170DN2 E3166
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BSM300GA170DN2
E3166
C67070-A2710-A67
fi235b05
DflG35t1
fi23SbOS
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Untitled
Abstract: No abstract text available
Text: SIEMENS BSM 75 GB 170 DN2 IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate • ^G on,min = 22 Ohm Type ^CE BSM 75 G B 1 7 0 D N 2 1700V 110A h Package Ordering Code HALF-BRIDGE 1
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C67070-A2702-A67
fl23St
00fi03Q3
235L05
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siemens igbt
Abstract: fr3060
Text: SIEMENS BSM 75 G AL 120 DN2 IGBT Power Module • Single switch with chopper diode • Including fast free-wheeling diodes • Package with insulated metal base plate £ BSM 75 GAL 120 DN2 1200V 105A LU Type 1c Package Ordering Code HALF BRIDGE GAL 1 C67076-A2011-A70
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C67076-A2011-A70
SIS00022
siemens igbt
fr3060
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siemens igbt BSM 300
Abstract: GT120DN2
Text: SIEMENS BSM 200 GT 120 DN2 IGBT Power Module Preliminary data • Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type VCE BSM 200 GT 120 DN2 1200V 300A h Package Ordering Code
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V7021
Abstract: 12 pin transformer sony LS 7729 T-77-29
Text: SONY CORP/COMPONENT P RODS 4TE D • 6362303 0003312 1 «SONY V7021 S O N Y NTSC/PAL Decoder Description V7021 is a decoder 1C used to convert composite video signals into analog RGB sig n a ls. It has signal o u tp u ts , such as composite sync, burst flag, sub-carrier, and
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V7021
T-77-29
12 pin transformer sony
LS 7729
T-77-29
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A6S marking code
Abstract: No abstract text available
Text: SIEMENS BAS 16S Silicon Sw itching Diode Array • For high-speed switching applications • Internal galvanic isolated Diodes in one package Tape loading orientation Top View 6 54 n n n M arking on S O T -363 package ( f o r e xam ple W Is) co rre spo n ds to pin 1 o f device
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EHA07193
EHA0729I
Q62702-A1241
OT-363
EHN00016
100ns,
A6S marking code
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Q62702-C2594
Abstract: No abstract text available
Text: SIEMENS BCP 51M . BCP 53M PNP Silicon AF Transistor • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP 54M.BCP 56M NPN BCP 51M AAs Q62702-C2592 BCP 52M AEs Q62702-C2593
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SCT-595
Q62702-C2592
Q62702-C2593
Q62702-C2594
300ns,
BCP53M
Q62702-C2594
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cc 3025 diode
Abstract: 5T4 tube BUZ110S MC 140 transistor 8235 smd transistor h7 E3045 Q67040-S4005-A2 transistor smd marking CODE Wb transistor marking smd 7c
Text: In fin e o n BUZ 11 OS ! ^ e d Costoni * technologie* im P r° SIPMOS Power Transistor Product Summary Features • N channel • Enhancement mode Drain source voltage ^DS Drain-Source on-state resistance ñ DSÍon Continuous drain current • Avalanche rated
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BUZ110S
BUZ110S
P-T0220-3-1
Q67040-S4005-A2
E3045A
P-TC263-3-2
Q67040-S4005-A6
E3045
cc 3025 diode
5T4 tube
MC 140 transistor
8235
smd transistor h7
transistor smd marking CODE Wb
transistor marking smd 7c
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pj 87 diode
Abstract: diode pj 87 I334 diode I334 660 tg diode iball pj 1339 PJ 63 MM diode 1s500 IRFM350
Text: Data Sheet No. PD-9.491C INTERNATIONAL RECTIFIER > lIORl REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM350 2N 7227 JANTX2N7227 JANTXV2N7S27 N-CHANNEL REF: MIL-S-19500/59S] Product Summary 400 Volt, 0.315 Ohm HEXFET T h e HEXFE T® technology is the key to International
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IRFM350
JANTX2N7227
JANTXV2N7227
MIL-S-1S500/5S2]
IRFM350D
IRFM350U
O-254
MIL-S-19500
pj 87 diode
diode pj 87
I334
diode I334
660 tg diode
iball
pj 1339
PJ 63 MM diode
1s500
IRFM350
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SGS-ATES l120
Abstract: National Semiconductor 4045 transistor bf 175 TAA611
Text: PROFESSIONAL SEMICONDUCTOR INTRODUCTION This databook contains data sheets on the SGS-ATES range of linear, MOS and COS/MOS integrated circuits intended for professional applications. The information on each product has been specially presented in order that the
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Untitled
Abstract: No abstract text available
Text: VEW-Family AC-DC Converters > 1 0 0 W Industrial Environment VEW-Family 150/300/600 W AC-DC Converters Single output • 3750 Vrms input to output electric strength test • High level of electrom agnetic compatibility Safety according to IEC/EN 60950 LGA
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98/IN
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TRANSISTOR si 6822
Abstract: LM 3140 si 6822 transistor transistor 6822 si transistors Si 6822 lm3140 SN-72500 transistors br 6822 Siemens technische transistor 6823
Text: Technische Erläuterungen SIEMENS Allgem eines O ptoelektronische Bauelem ente haben in der m odernen Elektronik und dam it in fast allen Bereichen unseres Lebens weiten Eingang gefunden. Sie sind in hohem Maße an dem Um stellungsprozeß von Mechanik auf Elektronik beteiligt und haben, aufgrund ihrer Funktion als
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M7A transistor
Abstract: transistor M7A Q62702-C2340
Text: SIEMENS BCR 169 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor R1 = 4 .7 kii Type Marking Ordering Code Pin Configuration BCR 169 WSs Q62702-C2340 1=B Package 2=E 3=C SOT-23 Maximum Ratings
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Q62702-C2340
OT-23
0235bD5
235b05
fl235b05
M7A transistor
transistor M7A
Q62702-C2340
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUP 401 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 G Type BUP 401 VCE 600V >c 29A C Pin 3 E Package Ordering Code TO-220 AB C67078-A4404-A2 Maximum Ratings
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O-220
C67078-A4404-A2
6235bQ5
006511b
GPT05
fi235b05
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFS 480 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • f j = 7GHz F = 1.5dB at 900MHz n • Two (galvanic) internal isolated
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900MHz
Q62702-F1531
OT-363
BFS480
fl235b
D1E5173
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