LY61L12816
Abstract: No abstract text available
Text: LY61L12816 128K X 16 BIT HIGH SPEED CMOS SRAM Rev. 1.4 REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Rev. 1.3 Rev. 1.4 Description Initial Issued Revised PACKAGE OUTLINE DIMENSION Revised VTERM to VT1 and VT2 Revised Test Condition of ICC/ISB1/IDR
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LY61L12816
44-pin
48-ball
LY61L12816
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Untitled
Abstract: No abstract text available
Text: LY61L12816 128K X 16 BIT HIGH SPEED CMOS SRAM Rev. 1.5 REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Rev. 1.3 Rev. 1.4 Rev. 1.5 Description Initial Issued Revised PACKAGE OUTLINE DIMENSION Revised VTERM to VT1 and VT2 Revised Test Condition of ICC/ISB1/IDR
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LY61L12816
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Untitled
Abstract: No abstract text available
Text: LY61L12816 128K X 16 BIT HIGH SPEED CMOS SRAM Rev. 1.0 REVISION HISTORY Revision Rev. 1.0 Description Initial Issued Issue Date May.26.2008 Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
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LY61L12816
LY61L12816
152-bit
44-pin
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Untitled
Abstract: No abstract text available
Text: LY61L12816 128K X 16 BIT HIGH SPEED CMOS SRAM Preliminary 0.2 FEATURES GENERAL DESCRIPTION Fast access time : 10/12/15/20/25ns Very low power consumption: Operating current Normal version : 200/180/150/110/90mA(TYP.) Operating current(15/20/25ns LL version):
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LY61L12816
LY61L12816
152-bit
10/12/15/20/25ns
200/180/150/110/90mA
15/20/25ns
45/40/35mA
44-pin
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Untitled
Abstract: No abstract text available
Text: LY61L12816A 128K X 16 BIT HIGH SPEED CMOS SRAM Rev. 1.1 REVISION HISTORY Revision Rev. 1.0 Description Initial Issue Issue Date March. 07. 2013 Rev. 1.1 Revise “TEST CONDITION” for VOH, VOL on page 3 IOH = -8mA revised as -4mA IOL =4mA revised as 8mA
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LY61L12816A
LY61L12816A
152-bit
LY61L12816AML-10I
LY61L12816AML-8T
LY61L12816AML-8
LY61L12816AML-10IT
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Untitled
Abstract: No abstract text available
Text: LY61L12816 128K X 16 BIT HIGH SPEED CMOS SRAM Preliminary 0.3 FEATURES GENERAL DESCRIPTION Fast access time : 10/12/15/20/25ns Very low power consumption: Operating current Normal version : 200/180/150/110/90mA(TYP.) Operating current(15/20/25ns LL version):
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LY61L12816
LY61L12816
152-bit
10/12/15/20/25ns
200/180/150/110/90mA
15/20/25ns
45/40/35mA
44-pin
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CS16LV40963
Abstract: BS62LV4006 sram cross reference CS18LV40963 LY6264 Hynix Cross Reference cs18lv10245 cs18lv02560 LY621024 K6X1008C2D
Text: www.ashlea.co.uk 01793 783784 Low power SRAM Cross Reference Density Configuration 64K 8Kx8 256K 32Kx8 Lyontek LY6264 LY62L64 LY62256 LY62L256 LY62256 2.7-5.5 1M 128Kx8 64Kx16 LY621024 LY62L1024 LY62L6416 Samsung K6X0808C1D K6X0808T1D K6X1008C2D K6X1008T2D
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32Kx8
LY6264
LY62L64
LY62256
LY62L256
LY62256
128Kx8
64Kx16
LY621024
LY62L1024
CS16LV40963
BS62LV4006
sram cross reference
CS18LV40963
LY6264
Hynix Cross Reference
cs18lv10245
cs18lv02560
LY621024
K6X1008C2D
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Untitled
Abstract: No abstract text available
Text: Page:1/1 Update: January 9, 2015 High Speed SRAM Density 64K Configuration 8K x 8 Power Supply 5V 5V 256K Item No. Speed ns LY6164 Isb 12/15 1.0mA(typ) LY61256 12/15 0.5mA(typ) Operating Temp. (*1) Data Sheet C/E/I C/E/I 32K × 8 3.3V LY61L256 12/15 0.5mA(typ)
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LY61L256
LY61L1288
LY611024
LY61L1024
LY61L2568
20LL/25LL
LY6112816
LY61L12816
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