Vishay Conditioner A
Abstract: GT-14 dupont mylar rohs m-bond 450 b
Text: M-Bond 450 Vishay Micro-Measurements Strain Gage Adhesive OTHER ACCESSORIES USED IN AN M-BOND 450 INSTALLATION: • CSM Degreaser or GC-6 Isopropyl Alcohol • Silicon-Carbide Paper • M-Prep Conditioner A RoHS • M-Prep Neutralizer 5A COMPLIANT • GSP-1 Gauze Sponges
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GT-14
08-Apr-05
Vishay Conditioner A
dupont mylar rohs
m-bond 450 b
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Untitled
Abstract: No abstract text available
Text: M-Bond 450 Micro-Measurements Strain Gage Adhesive OTHER ACCESSORIES USED IN AN M-BOND 450 INSTALLATION: • CSM Degreaser or GC-6 Isopropyl Alcohol Silicon-Carbide Paper M-Prep Conditioner A M-Prep Neutralizer 5A GSP-1 Gauze Sponges CSP-1 Cotton Applicators
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GT-14
B-152,
24-Jun-10
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cancer data
Abstract: 14032 m-bond 450 b
Text: MATERIAL SAFETY DATA SHEET SECTION 1: CHEMICAL PRODUCT AND COMPANY IDENTIFICATION PRODUCT: M-Bond 450 Part A November 18, 2005 Vishay Micro-Measurements Post Office Box 27777 Raleigh, NC 27611 MSDS # MGM055G 919-365-3800 CHEMTREC 1-800-424-9300 U.S. 703-527-3887 (Outside U.S.)
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MGM055G
805-FRM011
cancer data
14032
m-bond 450 b
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transistor A 27611
Abstract: 27611 LD50 ketone 14033
Text: MATERIAL SAFETY DATA SHEET SECTION 1: CHEMICAL PRODUCT AND COMPANY IDENTIFICATION PRODUCT: M-Bond 450 Part B November 18, 2005 Vishay Micro-Measurements Post Office Box 27777 Raleigh, NC 27611 MSDS # MGM056G 919-365-3800 CHEMTREC 1-800-424-9300 U.S. 703-527-3887 (Outside U.S.)
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MGM056G
805-FRM011
transistor A 27611
27611
LD50
ketone
14033
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Untitled
Abstract: No abstract text available
Text: Direct Attach DA3547 LEDs CxxxDA3547-Sxxx00 Data Sheet Cree’s Direct Attach DA3547 LEDs are the next generation of solid-state LED emitters that combine highly eficient InGaN materials with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value
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DA3547â
CxxxDA3547-Sxxx00
DA3547
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Untitled
Abstract: No abstract text available
Text: TR5270 LEDs CxxxTR5270-Sxx00 175- m CxxxTR5270-Sxx00-3 (250- m) Data Sheet Cree’s TR5270 LEDs are the next generation of solid-state LED emitters that combine highly eficient InGaN materials with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value for the TV-backlighting
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TR5270â
CxxxTR5270-Sxx00
CxxxTR5270-Sxx00-3
TR5270
TR5270
TR430
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Untitled
Abstract: No abstract text available
Text: Cree TR2432 LEDs Data Sheet CxxxTR2432-Sxx00 Cree’s TR™ LEDs are the newest generation of solid-state LED emitters that combine highly eficient InGaN materials with Cree’s proprietary device technology and silicon carbide substrates to deliver superior value for the LCD sideview
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TR2432â
CxxxTR2432-Sxx00
TR2432
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Untitled
Abstract: No abstract text available
Text: Cree TR2436 LEDs Data Sheet CxxxTR2436-Sxx00 Cree’s TR™ LEDs are the newest generation of solid-state LED emitters that combine highly eficient InGaN materials with Cree’s proprietary device technology and silicon carbide substrates to deliver superior value for the LCD sideview
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TR2436â
CxxxTR2436-Sxx00
TR2436
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Untitled
Abstract: No abstract text available
Text: TR5270M LEDs CxxxTR5270M-Sxx000 175- m CxxxTR5270M-Sxx000-3 (250- m) Data Sheet Cree’s TR5270M LEDs are the next generation of solid-state LED emitters that combine highly eficient InGaN materials with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value for the
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TR5270Mâ
CxxxTR5270M-Sxx000
CxxxTR5270M-Sxx000-3
TR5270M
TR5270M
TR520
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Untitled
Abstract: No abstract text available
Text: Cree EZ700 Gen II LED Data Sheet CxxxEZ700-Sxx000-2 Cree’s EZBright™ LEDs are the next generation of solid-state LED emitters that combine highly eficient InGaN materials with Cree’s proprietary optical design and device technology to deliver superior value for high-intensity LEDs. The
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EZ700â
CxxxEZ700-Sxx000-2
EZ700
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Untitled
Abstract: No abstract text available
Text: Direct Attach DA1000 LEDs CxxxDA1000-Sxx000 Data Sheet Cree’s Direct Attach DA1000 LEDs are the next generation of solid-state LED emitters that combine highly eficient InGaN materials with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value for
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DA1000â
CxxxDA1000-Sxx000
DA1000
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Chip Advanced Tech
Abstract: XP1006 XP1006 bonding
Text: XP1014-BD 8.5-11.0 GHz GaAs MMIC Power Amplifier Features • XP1006 Driver Amplifier • 18.0 dB Small Signal Gain • +31.0 dBm Saturated Output Power • 35% Power Added Efficiency • On-chip Gate Bias Circuit • 100% On-Wafer RF, DC and Output Power Testing
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XP1014-BD
XP1006
MIL-STD-883
01-Sep-10
XP1014
I0005129
Chip Advanced Tech
XP1006 bonding
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18MPA0567
Abstract: 84-1LMI
Text: 17.0-22.0 GHz GaAs MMIC Power Amplifier 18MPA0567 September 2005 - Rev 01-Sep-05 Features Chip Device Layout tio n Excellent Saturated Output Stage 22.0 dB Small Signal Gain +27.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883
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18MPA0567
01-Sep-05
MIL-STD-883
18MPA0567
84-1LMI
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Untitled
Abstract: No abstract text available
Text: Cree TR2227 LEDs Data Sheet CxxxTR2227-Sxx00 Cree’s TR™ LEDs are the newest generation of solid-state LED emitters that combine highly eficient InGaN materials with Cree’s proprietary device technology and silicon carbide substrates to deliver superior value for the LCD sideview
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TR2227â
CxxxTR2227-Sxx00
TR2227
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Untitled
Abstract: No abstract text available
Text: Direct Attach DA700 LEDs CxxxDA700-Sxx000 Data Sheet Cree’s Direct Attach DA700 LEDs are the next generation of solid-state LED emitters that combine highly eficient InGaN materials with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value for
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DA700â
CxxxDA700-Sxx000
DA700
DA700
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P1014
Abstract: xp1014 84-1LMI XP1006 bonding GHz HPA
Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier Velocium Products 18 - 20 GHz HPA - APH478 P1014 April 2006 - Rev 14-Apr-06 Features XP1006/7 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit
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APH478
P1014
14-Apr-06
XP1006/7
MIL-STD-883
XP1014
I0005129
P1014
xp1014
84-1LMI
XP1006 bonding
GHz HPA
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Untitled
Abstract: No abstract text available
Text: Cree EZ500 Gen II LED Data Sheet CxxxEZ500-Sxxx00-2 Cree’s EZBright™ LEDs are the next generation of solid-state LED emitters that combine highly eficient InGaN materials with Cree’s proprietary optical design and device technology to deliver superior value for high-intensity LEDs.
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EZ500â
CxxxEZ500-Sxxx00-2
EZ500
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VCSEL array, 850nm
Abstract: GaAs array, 850nm LX3044 LX3044-TR LX3045 LX3046 VCSEL array, 850nm flip
Text: Obsolete Product – Not Recommended For New Design LX3044 / 45 / 46 I N T E G R A T E D 10.3 Gbps Coplanar GaAs PIN Photo Diode P R O D U C T S P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION LX3044 Single Die LX3045, 1x4 Array Die LX3046, 1x12 Array Die
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LX3044
LX3045,
LX3046,
50ohm
125mm
LX304X
VCSEL array, 850nm
GaAs array, 850nm
LX3044-TR
LX3045
LX3046
VCSEL array, 850nm flip
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alpha detector
Abstract: CDC7622 on/gold detectors circuit
Text: Universal Chip Mixer and Detector Schottky Barrier Diodes EBA lpha CDX76XX, CME7660 Features • For Microwave M IC Assembly ■ Mechanically Rugged Design Exceeds MIL 883 W ire Bond Specifications for Hybrid Assembly ■ Optimized Barrier Heights for Mixer and Detector
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CDX76XX,
CME7660
CDB7619
3E-09
1E-11
1E-05
1E-05
CDC7622
CDB7619
alpha detector
CDC7622
on/gold detectors circuit
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APT1001RD
Abstract: APT5023
Text: ADVANCTD POUJFR TECHNOLOGY MT E D • QSSV'IQ'l 0000343 SOT APT POWER MOS IV COMMERCIAL AND CUSTOM DIE WAVR T - 2Æ -IS ' INTRODUCTION: The purpose of this APT Note is to describe the Power MOS IV™ Transistor Die available from Advanced Power Technology.
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APT-104
APT-105
APT-106
APT-107
APT-108
APT1001RD
APT5023
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APT40M80DN
Abstract: APT801R2DN mos die APT-106 APT5020DN APT5025DN APT601R3DN APT5540DN APT5023 co257
Text: ADVANCTD POUJFR TECHNOLOGY MT E D • QSSV'IQ'l 0000343 SOT APT POWER MOS IV COMMERCIAL AND CUSTOM DIE WAVR T - 2Æ -IS ' INTRODUCTION: The purpose of this APT Note is to describe the Power MOS IV™ Transistor Die available from Advanced Power Technology.
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APT-105
APT-106
APT-107
APT-108
APT40M80DN
APT801R2DN
mos die
APT-106
APT5020DN
APT5025DN
APT601R3DN
APT5540DN
APT5023
co257
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Untitled
Abstract: No abstract text available
Text: Universal Chip Mixer and EHA lp h a Detector Schottky Barrier Diodes CDX76XX, CME7660 Features • For Microwave MIC Assembly ■ Mechanically Rugged Design Exceeds MIL 883 Wire Bond Specifications for Hybrid Assembly ■ Optimized Barrier Heights for Mixer and Detector
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CDX76XX,
CME7660
comm69
1E-05
CDC7622
3E-06
1E-11
CDB7619
3E-09
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NE9004
Abstract: NE900400 NE900474-15 NE900474-13 NE900400G NE9001 MC 88000
Text: Ku-BAND POWER GaAs MESFET FEATURES NE9004 SERIES NE900474-13.-15 OUTPUT POWER AND POWER ADDED EFFICIENCY vs. INPUT POWER CLASS A OPERATION HIGH POWER ADDED EFFICIENCY EMPLOYS P.H.S. PLATED HEAT SINK AND VIA HOLE GROUNDING BROAD BANDWIDTH INPUT OF PACKAGED DEVICE PARTIALLY MATCHED
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NE9004
NE900474-13
NE900
NE9000,
NE9001
NE9002.
AN-1001
L427525
NE900400
NE900474-15
NE900400G
MC 88000
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2N6580
Abstract: 2N6583 2N6581 OTC433C OTC4830 OTC483Q SVT400-3 SVT400-5
Text: OPTEK TECHNOLOGY INC MAE D • aCJDlBflS blS ■ Product Bulletin OHC4830 August 1990 OTK W NPN Power Switching Transistor Die .O P T E K -r-35-\°\ Type OTC483Q 450V, 5A Applications • • • • • Switching Regulators PWM Inverters Motor Controls
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OHC4830
OTC4830
OTC433C)
4830-400L
4830-400H
OTC483Q
2N6580,
2N6581,
2N6583,
SVT400-3,
2N6580
2N6583
2N6581
OTC433C
SVT400-3
SVT400-5
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