Vishay Conditioner A
Abstract: GT-14 dupont mylar rohs m-bond 450 b
Text: M-Bond 450 Vishay Micro-Measurements Strain Gage Adhesive OTHER ACCESSORIES USED IN AN M-BOND 450 INSTALLATION: • CSM Degreaser or GC-6 Isopropyl Alcohol • Silicon-Carbide Paper • M-Prep Conditioner A RoHS • M-Prep Neutralizer 5A COMPLIANT • GSP-1 Gauze Sponges
|
Original
|
GT-14
08-Apr-05
Vishay Conditioner A
dupont mylar rohs
m-bond 450 b
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M-Bond 450 Micro-Measurements Strain Gage Adhesive OTHER ACCESSORIES USED IN AN M-BOND 450 INSTALLATION: • CSM Degreaser or GC-6 Isopropyl Alcohol Silicon-Carbide Paper M-Prep Conditioner A M-Prep Neutralizer 5A GSP-1 Gauze Sponges CSP-1 Cotton Applicators
|
Original
|
GT-14
B-152,
24-Jun-10
|
PDF
|
cancer data
Abstract: 14032 m-bond 450 b
Text: MATERIAL SAFETY DATA SHEET SECTION 1: CHEMICAL PRODUCT AND COMPANY IDENTIFICATION PRODUCT: M-Bond 450 Part A November 18, 2005 Vishay Micro-Measurements Post Office Box 27777 Raleigh, NC 27611 MSDS # MGM055G 919-365-3800 CHEMTREC 1-800-424-9300 U.S. 703-527-3887 (Outside U.S.)
|
Original
|
MGM055G
805-FRM011
cancer data
14032
m-bond 450 b
|
PDF
|
transistor A 27611
Abstract: 27611 LD50 ketone 14033
Text: MATERIAL SAFETY DATA SHEET SECTION 1: CHEMICAL PRODUCT AND COMPANY IDENTIFICATION PRODUCT: M-Bond 450 Part B November 18, 2005 Vishay Micro-Measurements Post Office Box 27777 Raleigh, NC 27611 MSDS # MGM056G 919-365-3800 CHEMTREC 1-800-424-9300 U.S. 703-527-3887 (Outside U.S.)
|
Original
|
MGM056G
805-FRM011
transistor A 27611
27611
LD50
ketone
14033
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TR5270 LEDs CxxxTR5270-Sxx00 175- m CxxxTR5270-Sxx00-3 (250- m) Data Sheet Cree’s TR5270 LEDs are the next generation of solid-state LED emitters that combine highly eficient InGaN materials with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value for the TV-backlighting
|
Original
|
TR5270â
CxxxTR5270-Sxx00
CxxxTR5270-Sxx00-3
TR5270
TR5270
TR430
|
PDF
|
alpha detector
Abstract: CDC7622 on/gold detectors circuit
Text: Universal Chip Mixer and Detector Schottky Barrier Diodes EBA lpha CDX76XX, CME7660 Features • For Microwave M IC Assembly ■ Mechanically Rugged Design Exceeds MIL 883 W ire Bond Specifications for Hybrid Assembly ■ Optimized Barrier Heights for Mixer and Detector
|
OCR Scan
|
CDX76XX,
CME7660
CDB7619
3E-09
1E-11
1E-05
1E-05
CDC7622
CDB7619
alpha detector
CDC7622
on/gold detectors circuit
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Universal Chip Mixer and EHA lp h a Detector Schottky Barrier Diodes CDX76XX, CME7660 Features • For Microwave MIC Assembly ■ Mechanically Rugged Design Exceeds MIL 883 Wire Bond Specifications for Hybrid Assembly ■ Optimized Barrier Heights for Mixer and Detector
|
OCR Scan
|
CDX76XX,
CME7660
comm69
1E-05
CDC7622
3E-06
1E-11
CDB7619
3E-09
|
PDF
|
NE9004
Abstract: NE900400 NE900474-15 NE900474-13 NE900400G NE9001 MC 88000
Text: Ku-BAND POWER GaAs MESFET FEATURES NE9004 SERIES NE900474-13.-15 OUTPUT POWER AND POWER ADDED EFFICIENCY vs. INPUT POWER CLASS A OPERATION HIGH POWER ADDED EFFICIENCY EMPLOYS P.H.S. PLATED HEAT SINK AND VIA HOLE GROUNDING BROAD BANDWIDTH INPUT OF PACKAGED DEVICE PARTIALLY MATCHED
|
OCR Scan
|
NE9004
NE900474-13
NE900
NE9000,
NE9001
NE9002.
AN-1001
L427525
NE900400
NE900474-15
NE900400G
MC 88000
|
PDF
|
Chip Advanced Tech
Abstract: XP1006 XP1006 bonding
Text: XP1014-BD 8.5-11.0 GHz GaAs MMIC Power Amplifier Features • XP1006 Driver Amplifier • 18.0 dB Small Signal Gain • +31.0 dBm Saturated Output Power • 35% Power Added Efficiency • On-chip Gate Bias Circuit • 100% On-Wafer RF, DC and Output Power Testing
|
Original
|
XP1014-BD
XP1006
MIL-STD-883
01-Sep-10
XP1014
I0005129
Chip Advanced Tech
XP1006 bonding
|
PDF
|
P1021
Abstract: 18MPA0567 DM6030HK TS3332LD XP1021-BD XP1021-BD-000V XP1021-BD-EV1
Text: 17.0-22.0 GHz GaAs MMIC Power Amplifier P1021-BD April 2007 - Rev 17-Apr-07 Features Excellent Saturated Output Stage 22.0 dB Small Signal Gain +27.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883
|
Original
|
P1021-BD
17-Apr-07
MIL-STD-883
XP1021-BD
XP1021-BD-000V
XP1021-BD-EV1
XP1021
P1021
18MPA0567
DM6030HK
TS3332LD
XP1021-BD
XP1021-BD-000V
XP1021-BD-EV1
|
PDF
|
P1014
Abstract: xp1014 84-1LMI XP1006 bonding GHz HPA
Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier Velocium Products 18 - 20 GHz HPA - APH478 P1014 April 2006 - Rev 14-Apr-06 Features XP1006/7 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit
|
Original
|
APH478
P1014
14-Apr-06
XP1006/7
MIL-STD-883
XP1014
I0005129
P1014
xp1014
84-1LMI
XP1006 bonding
GHz HPA
|
PDF
|
2N6580
Abstract: 2N6583 2N6581 OTC433C OTC4830 OTC483Q SVT400-3 SVT400-5
Text: OPTEK TECHNOLOGY INC MAE D • aCJDlBflS blS ■ Product Bulletin OHC4830 August 1990 OTK W NPN Power Switching Transistor Die .O P T E K -r-35-\°\ Type OTC483Q 450V, 5A Applications • • • • • Switching Regulators PWM Inverters Motor Controls
|
OCR Scan
|
OHC4830
OTC4830
OTC433C)
4830-400L
4830-400H
OTC483Q
2N6580,
2N6581,
2N6583,
SVT400-3,
2N6580
2N6583
2N6581
OTC433C
SVT400-3
SVT400-5
|
PDF
|
t6060
Abstract: T-6060
Text: OPTEK TECHNOLOGY INC 40E d • L ? ciasaG oGG^ai a ta ■ otk I c iv Product Bulletin OTC1015 August 1990_ NPN Power Darlington Die "T'33 ^ Types OTC1015, OTC6030, OTC6050 450V, 20A Schematic Note 7 Base 1 o i - K Q1
|
OCR Scan
|
OTC1015
OTC1015,
OTC6030,
OTC6050
OTC6030
t6060
T-6060
|
PDF
|
SVT-6060
Abstract: oms 450 SVT6000 SVT6060 SVT-6000 2N3467 DTC6050 OTC1015 OTC6030 OTC6050
Text: OPTEK TE CH NO LOG Y INC Product Bulletin OTC1015 August 1990_ MAE D L h a s s a 000130^ OTK ata SQ7. u r I c rv NPN Power Darlington Die Types OTC1015, OTC6030, QTC6050 450V, 20A Collector Schematic Note 7 Base 1 0- n r “ *! Q1 Q2 D2 R1
|
OCR Scan
|
OTC1015
OTC1015,
OTC6030,
OTC6050
OTC1015
OTC6030
OTC6050
U1K50nS
M4307
200fiHY
SVT-6060
oms 450
SVT6000
SVT6060
SVT-6000
2N3467
DTC6050
OTC6030
|
PDF
|
|
|
silicon carbide
Abstract: KS5450A-M KS5450A-N KS5450A-O KS5450A-P KS5450A-Q IC TECHNOLOGY LED pulse derating curve silicon carbide LED
Text: InGaN•SiC Technology The Leader in Silicon Carbide Solid State Technology KSx450x-x Features l l l l High performance 3.5mw optical power 450nm Deep Blue Single Wire Bond Structure Class ESD Rating Ô3 Applications l l l l l l Outdoor LED Video Displays
|
Original
|
KSx450x-x
450nm
silicon carbide
KS5450A-M
KS5450A-N
KS5450A-O
KS5450A-P
KS5450A-Q
IC TECHNOLOGY
LED pulse derating curve
silicon carbide LED
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier Velocium Products 18 - 20 GHz HPA - APH478 P1014 November 2006 - Rev 01-Nov-06 Features XP1006 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit
|
Original
|
APH478
P1014
01-Nov-06
XP1006
MIL-STD-883
XP1014
I0005129
XP1014-BD-000W
XP1014-BD-000V
XP1014-BD-EV1
|
PDF
|
p1014
Abstract: No abstract text available
Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier Velocium Products 18 - 20 GHz HPA - APH478 P1014 November 2006 - Rev 01-Nov-06 Features XP1006 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit
|
Original
|
01-Nov-06
APH478
P1014
XP1014
I0005129
XP1006
MIL-STD-883
XP1014-BD-000W
XP1014-BD-000V
XP1014-BD-EV1
|
PDF
|
SA051
Abstract: HEMT Amplifier
Text: TRYw K-Band Power HEMT Amplifier APH212C Features • RF frequency: 17 to 27 GHz • Linear gain: 16 dB, typical • PldB: 31 dBm, typical • Unconditionally stable • Balanced design provides excellent input and output VSWR • DC power: 4 Vdc at 1350 mA
|
OCR Scan
|
APH212C
APH212C
SA051
006/J-2
SA051
HEMT Amplifier
|
PDF
|
CDB7619-000
Abstract: CDE7618-000 Silicon Detector Diodes
Text: EBA lpha Silicon Schottky Barrier Detector Diodes Features Both P-Type and N-Type Low Barrier Silicon Available Low 1/f Noise Bonded Junctions for Reliability Planar Passivated Beam-Lead and Chip Construction See Also Zero Bias Silicon Schottky Barrier Detector Diodes
|
OCR Scan
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TR3547 LEDs CxxxTR3547-Sxx00 Data Sheet Cree’s TR3547 LEDs are the next generation of solid-state LED emitters that combine highly eficient InGaN materials with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value for the TV-backlighting
|
Original
|
TR3547â
CxxxTR3547-Sxx00
TR3547
|
PDF
|
TR505
Abstract: No abstract text available
Text: TR5050 LEDs CxxxTR5050-Sxx000 Data Sheet Cree’s TR5050 LEDs are the next generation of solid-state LED emitters that combine highly eficient InGaN materials with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value for the TV-backlighting
|
Original
|
TR5050â
CxxxTR5050-Sxx000
TR5050
TR500
TR505
|
PDF
|
Microsemi LX3055
Abstract: photo diode 10 Gbps LX3055 1550nm photodiode 1.6 Ghz VCSEL 1550 nm 1 Gbps 1550nm VCSEL InGaAs Photodiode 1550nm PHOTO diode
Text: LX3055 TM Coplanar InGaAs/InP PIN Photo Diode P RODUCTION D ATA S HEET Microsemi’s InGaAs/InP PIN Photo Diode chips are ideal for high bandwidth 1310nm and 1550nm optical networking applications. The device series offer high responsivity, low dark current, and
|
Original
|
LX3055
1310nm
1550nm
LX3055
Microsemi LX3055
photo diode 10 Gbps
1550nm photodiode 1.6 Ghz
VCSEL 1550 nm 1 Gbps
1550nm VCSEL
InGaAs Photodiode 1550nm
PHOTO diode
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TR5050M LEDs CxxxTR5050M-Sxx000 Data Sheet Cree’s TR5050M LEDs are the next generation of solid-state LED emitters that combine highly eficient InGaN materials with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value for the TV-backlighting
|
Original
|
TR5050Mâ
CxxxTR5050M-Sxx000
TR5050M
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET G a As MES FET NE76000 C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • CHIP DIMENSIONS Unit: /u rn Low noise figure NF = 1.6 dB TYP. at f = 12 GHz High associated gain 450 - Ga = 9.0 dB TYP. at f : 12 GHz Gate length: Lg
|
OCR Scan
|
NE76000
|
PDF
|
