MARKING T79
Abstract: transistor marking T79 ghz
Text: A Business Partner of Renesas Electronics Corporation. Preliminary 2SC5508 / NE662M04 Data Sheet NPN SILICON RF TRANSISTOR R09DS0055EJ0200 Rev.2.00 Mar 5, 2013 FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M04 FEATURES •
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2SC5508
NE662M04
R09DS0055EJ0200
R09DS0055EJ0200
MARKING T79
transistor marking T79 ghz
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Untitled
Abstract: No abstract text available
Text: A Business Partner of Renesas Electronics Corporation. Preliminary 2SC5509 / NE663M04 Data Sheet NPN SILICON RF TRANSISTOR R09DS0056EJ0300 Rev.3.00 Mar 5, 2013 FOR MEDIUM OUTPUT POWER, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M04
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2SC5509
NE663M04
R09DS0056EJ0300
2SC5509
2SC5509-A
2SC5509-T2
2SC5509-T
R09DS0056EJ0300
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Untitled
Abstract: No abstract text available
Text: Accessories CAG-CLG Insulator for crimp contacts male / white marking Contact configuration M02 M03 M04 M05 M06 M07 M08 M10 M12 M16 M19 CAG CAG-CLG Crimp contacts, kit with the number of contacts in a tube female / red marking Insulator part number Male contact
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Untitled
Abstract: No abstract text available
Text: Product Information Control No. : GSC-0504-D Established on Aug 24, 2011 1. 2150MHz Band 10dB Chip Directional Coupler TYPE No: GSC504-10M2150A RoHS correspondence article 2. Appearance and Construction 2.1 Dimension Unit: mm 3.2 1 0.3 1 2 2 0.5 G M04 G
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GSC-0504-D
2150MHz
GSC504-10M2150A
25degC)
35degC
125deg
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FM401
Abstract: FM404 FM407 FM405 FM402 FM403 FM406
Text: LESHAN RADIO COMPANY, LTD. FM401 – FM407 1A 1A GLASS PASSIVATED SMA DIODES TYPE FM401 FM402 FM403 FM404 FM405 FM406 FM407 Marking M01 M02 M03 M04 M05 M06 M07 VRRM V IF (A) V F (V) IRMI(µA) IP8M(A) 50 100 200 400 600 800 1000 1.0 1.10 5.0 30 Package Dimensions
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FM401
FM407
FM402
FM403
FM404
FM405
FM406
214AC
FM401
FM404
FM407
FM405
FM402
FM403
FM406
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet 2SC5508 NPN SILICON RF TRANSISTOR R09DS0055EJ0200 Rev.2.00 Mar 5, 2013 FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M04 FEATURES • • • • • <R> Ideal for low-noise, high-gain amplification applications
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2SC5508
R09DS0055EJ0200
2SC5508-A
2SC5508-T2
2SC5508-T2-A
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet 2SC5509 NPN SILICON RF TRANSISTOR R09DS0056EJ0300 Rev.3.00 Mar 5, 2013 FOR MEDIUM OUTPUT POWER, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M04 FEATURES • • • • • <R> Ideal for medium output power amplification
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2SC5509
R09DS0056EJ0300
2SC5509-A
2SC5509-T2
2SC5509-T2-A
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GSC504-10M2150A
Abstract: No abstract text available
Text: Product Information Control No. : GSC-0504-D Established on Aug 24, 2011 1. 2150MHz Band 10dB Chip Directional Coupler TYPE No: GSC504-10M2150A RoHS correspondence article 2. Appearance and Construction 2.1 Dimension Unit: mm 3.2 1 0.3 1 2 2 0.5 G M04 G
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GSC-0504-D
2150MHz
GSC504-10M2150A
25degC)
35degC
125deg
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marking v80
Abstract: transistor marking v80 ghz ne3509m04 NE3509M04-A m04 marking NE3509 HS350
Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3509M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.4 dB TYP., Ga = 17.5 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA • Flat-lead 4-pin thin-type super minimold M04 package
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NE3509M04
NE3509M04
NE3509M04-T2
NE3509M04-A
NE3509M04-T2-A
NE3509M04-T2B-A
PG10608EJ02V0DS
marking v80
transistor marking v80 ghz
m04 marking
NE3509
HS350
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transistor marking M04 GHZ
Abstract: No abstract text available
Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3508M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.45 dB TYP., Ga = 14 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA • Flat-lead 4-pin thin-type super minimold M04 package
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NE3508M04
NE3508M04-A
NE3508M04-T2
NE3508M04-T2-A
NE3508M04-T2B
PG10586EJ02V0DS
transistor marking M04 GHZ
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transistor marking T79 ghz
Abstract: MARKING T79 "NPN Transistor" marking T79 transistor marking T79 2SC5508 2SC5508 application transistor 2SC5508 PU10521EJ01V0DS 2SC5508-T2 NEC 1357
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5508 NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M04 FEATURES • Ideal for low-noise, high-gain amplification applications • NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz
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2SC5508
2SC5508-T2
transistor marking T79 ghz
MARKING T79 "NPN Transistor"
marking T79
transistor marking T79
2SC5508
2SC5508 application
transistor 2SC5508
PU10521EJ01V0DS
2SC5508-T2
NEC 1357
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NEC Ga FET marking L
Abstract: a 933 transisitor NT 407 F 0429 01 2701 00 NE3509M04 NE3509 cel 502 Power Transisitor 100V 2A NE3509M04-A NE3509M04-T2
Text: PRELIMINARY PRODUCT INFORMATION HETERO JUNCTION FIELD EFFECT TRANSISITOR NE3509M04 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES - Super Low Noise Figure & Associated Gain : NF=0.4dB TYP. Ga=17.5dB TYP. @f=2GHz, VDS=2V,ID=10mA - Flat-lead 4-pin tin-type super mini-mold M04 package (Pb-Free T. )
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NE3509M04
NE3509M04-A
50pcs
NE3509M04-T2
NE3509M04-T2-A
NEC Ga FET marking L
a 933 transisitor
NT 407 F
0429 01 2701 00
NE3509M04
NE3509
cel 502
Power Transisitor 100V 2A
NE3509M04-A
NE3509M04-T2
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2SC5761
Abstract: 2SC5761-T2 2FB200 transistor s2p MARKING T16
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR 2SC5761 NPN SiGe RF TRANSISTOR FOR LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M04 FEATURES • Ideal for low noise ⋅ high-gain amplification NF = 0.9 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz
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2SC5761
2SC5761-T2
PU10212EJ02V0DS
2SC5761
2SC5761-T2
2FB200
transistor s2p
MARKING T16
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transistor marking R57 ghz
Abstract: TRANSISTOR R57 PU10008EJ02V0DS 2SC5434 2SC5509 2SC5753 2SC5754 2SC5754-T2 DCS1800 GSM1800
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5754 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 0.4 W FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm
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2SC5754
2SC5754-T2
PU10008EJ02V0DS
transistor marking R57 ghz
TRANSISTOR R57
PU10008EJ02V0DS
2SC5434
2SC5509
2SC5753
2SC5754
2SC5754-T2
DCS1800
GSM1800
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NE3508M04
Abstract: Power Transisitor 100V 2A NE3508M04-A NE3508M04-T2 NE3508M04-T2-A transisitor 02 p 67
Text: PRELIMINARY PRODUCT INFORMATION HETERO JUNCTION FIELD EFFECT TRANSISITOR NE3508M04 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES - Super Low Noise Figure & Associated Gain : NF=0.45dB TYP. Ga=14dB TYP. @f=2GHz, VDS=2V, ID=10mA - Flat-lead 4-pin tin-type super mini-mold M04 package (Pb-Free T. )
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NE3508M04
NE3508M04-A
50pcs
NE3508M04-T2
NE3508M04-T2-A
NE3508M04
Power Transisitor 100V 2A
NE3508M04-A
NE3508M04-T2
NE3508M04-T2-A
transisitor 02 p 67
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HS350
Abstract: NE3519M04
Text: PreliminaryData Sheet NE3519M04 N-channel GaAs HJ-FET, L to C Band Low Noise R09DS0008EJ0100 Rev.1.00 Oct 21, 2010 Amplifier FEATURES • Low noise figure and high associated gain NF = 0.40 dB TYP., Ga = 18.5 dB TYP. @VDS = 2 V, ID = 10 mA, f = 2 GHz • Flat-lead 4-pin thin-type super minimold M04 package
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NE3519M04
R09DS0008EJ0100
NE3519M04-T2
NE3519M04-T2-A
NE3519M04-T2B
NE3519M04-T2B-A
HS350
NE3519M04
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nec v80
Abstract: transistor marking v80 ghz NE3509 HS350 NE3509M04 NE3509M04-A NE3509M04-T2 NE3509M04-T2-A NE3509M04. S2P sdars lna
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3509M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.4 dB TYP., Ga = 17.5 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA • Flat-lead 4-pin thin-type super minimold M04 package
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NE3509M04
NE3509M04-A
NE3509M04-T2
NE3509M04-T2-A
nec v80
transistor marking v80 ghz
NE3509
HS350
NE3509M04
NE3509M04-A
NE3509M04-T2
NE3509M04-T2-A
NE3509M04. S2P
sdars lna
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transistor marking v80 ghz
Abstract: HS350 NE3509M04 NE3509M04-A NE3509M04-T2 NE3509M04-T2-A NE3509 DSA0029112 NE3509M04. S2P sdars lna
Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3509M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.4 dB TYP., Ga = 17.5 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA • Flat-lead 4-pin thin-type super minimold M04 package
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NE3509M04
NE3509M04-A
NE3509M04-T2
NE3509M04-T2-A
transistor marking v80 ghz
HS350
NE3509M04
NE3509M04-A
NE3509M04-T2
NE3509M04-T2-A
NE3509
DSA0029112
NE3509M04. S2P
sdars lna
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2SC5509
Abstract: 2SC5509-T2 2V330
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5509 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M04 FEATURES • Ideal for medium output power amplification • NF = 1.2 dB TYP., Ga = 12 dB TYP. @ VCE = 2 V, IC = 10 mA, f = 2 GHz
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2SC5509
2SC5509-T2
2SC5509
2SC5509-T2
2V330
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NE3508M04-T2-A
Abstract: HS350 NE3508M04 NE3508M04-A NE3508M04-T2 marking v79 ne3508
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3508M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.45 dB TYP., Ga = 14 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA • Flat-lead 4-pin thin-type super minimold M04 package
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NE3508M04
NE3508M04-A
NE3508M04-T2
NE3508M04-T2-A
NE3508M04-T2-A
HS350
NE3508M04
NE3508M04-A
NE3508M04-T2
marking v79
ne3508
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transistor marking T78 ghz
Abstract: 2SC5507 2SC5507-T2 power must office 650
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5507 NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M04 FEATURES • Low noise and high gain with low collector current • NF = 1.2 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 2 mA, f = 2 GHz
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2SC5507
2SC5507-T2
transistor marking T78 ghz
2SC5507
2SC5507-T2
power must office 650
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NEC Ga FET marking L
Abstract: NE3508M04-T2B-A nec microwave NE3508M04-A NE3508M04-T2-A HS350 NE3508M04 NE3508M04-T2
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3508M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.45 dB TYP., Ga = 14 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA • Flat-lead 4-pin thin-type super minimold M04 package
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NE3508M04
NE3508M04-A
NE3508M04-T2
NE3508M04-T2-A
NE3508M04-T2B
NE3508M04-T2B-A
NEC Ga FET marking L
NE3508M04-T2B-A
nec microwave
NE3508M04-A
NE3508M04-T2-A
HS350
NE3508M04
NE3508M04-T2
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nec v80
Abstract: NEC Ga FET marking L HS350 NE3509M04 NE3509M04-A NE3509M04-T2 NE3509M04-T2-A
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3509M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.4 dB TYP., Ga = 17.5 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA • Flat-lead 4-pin thin-type super minimold M04 package
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NE3509M04
NE3509M04-A
NE3509M04-T2
NE3509M04-T2-A
NE3509M04-T2B
NE3509M04-T2B-A
nec v80
NEC Ga FET marking L
HS350
NE3509M04
NE3509M04-A
NE3509M04-T2
NE3509M04-T2-A
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RT8202MGQW
Abstract: RT8202MZQW RT8202M WQFN-16L DS8202 RT8202LZQW DS820 RT8202L 5F marking code transistor
Text: RT8202L/M Single Synchronous Buck Controller General Description Features The RT8202L/M PWM controller provides the high efficiency, excellent transient response, and high DC output accuracy needed for stepping down high voltage batteries to generate low voltage CPU core, I/O, and chipset RAM
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RT8202L/M
RT8202L/M
100ns
DS8202L/M-04
RT8202MGQW
RT8202MZQW
RT8202M
WQFN-16L
DS8202
RT8202LZQW
DS820
RT8202L
5F marking code transistor
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