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    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA m SEM ICO NDUCTO R TECHNICAL DATA M O C 8 1 11 M O C 8112 M O C 81 13 6-P in D IP O p to iso lato rs Transistor Output These d evices co n sist o f a g a lliu m arsenide in fra re d e m ittin g d io d e o p tic a lly co up le d to a m o n o lith ic silico n p h o to tra n s is to r d etector. The in te rn a l base-to-Pin 6 co nn e ctio n


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    PDF E54915 IEC380/VDE0806, IEC435/VDE0805, IEC65/VDE0860, VDE0110b,

    730A-02

    Abstract: IEC-204 VDE0860 MOC8111 MOC8112 VDE0160 VDE0832 VDE0833 MOC8111 MOTOROLA
    Text: MOTOROLA SEM IC O N D U C TO R TECHNICAL DATA M O C 8 1 11 M OC8112 M OC8113 6-Pin D IP O p to iso lato rs T ra n sisto r O u tpu t These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. The internal base-to-Pin 6 connection


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    PDF E54915 IEC380/VDE0806, IEC435/VDE0805, IEC65/VDE0860, VQE0110b, IEC204/VDE0113, VDE0160, VDE0832, VDE0833, 30A-02 730A-02 IEC-204 VDE0860 MOC8111 MOC8112 VDE0160 VDE0832 VDE0833 MOC8111 MOTOROLA

    Untitled

    Abstract: No abstract text available
    Text: General Purpose 6 pin DIP Part Numfaar Features CTO Tut « • M U t a fc Currant liwmJwf Rati» Wn %} Jactation T etf ifnltaqr <KV C M B im o u b F o ru K rt Cunm t BVceg fcstm A kæoffo*) VOBBalW È r i Mim « A t a n * It ' VBE(M) $. y M u(m A) ttH ( D A )


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    PDF SFH600-0 SFH600-1 SFH600-2 SFH600-3 SFH600-4 SFH601-1 SFH601-2 SFH601-3 SFH601-4 SFH601-5

    Untitled

    Abstract: No abstract text available
    Text: E U PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS MOC8111 MOC8112 MOC8113 PACKAGE DIMENSIONS DESCRIPTION The MOC series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. db Æ db FEATURES J 4.06 3.81 i l High isolation voltage 5300 VAC RMS—1 minute


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    PDF MOC8111 MOC8112 MOC8113 MOC8111: MOC8112: MOC8113: E90700 i154i 74bbfl 000L17E

    motorola 5118 setup

    Abstract: OC811
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA VDE GlobalOptotsolâtor TO UL ®®®® C8A sen BEMKO DEMKO NEMKO BAST 6 -Pin DIP Optolsolators Transistor Output No Base Connection MOC8111* MOC8112* MOC8113 fCTR • 20% Min] [CTR - 60% Min] [CTR • 100* Min]


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    PDF MOC8111, MOC8112 MOC8113 MOC8111* MOC8112* MOC8113 C8112 C8113 motorola 5118 setup OC811

    M0C8113

    Abstract: OC8112 M0C8111 OC811 m0c8112
    Text: E PHOTOTRANSISTOR OPTOCOUPLERS U OPTOELECTRONICS MOC8111 MOC8112 MOC8113 PACKAGE DIMENSIONS DESCRIPTION db Æ Æ The MOC series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. Î “ « t I l 03 I V c p _ g ì 8.89 8.38 ~ -J _ 2.3;


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    PDF MOC8111 MOC8112 MOC8113 MOC8111: MOC8112: MOC8113: E90700 I2-54! HT111 M0C8113 OC8112 M0C8111 OC811 m0c8112

    ORB1134

    Abstract: H11F1 300 CNY17GF-2 cnw85 CQX17 L14LOB 740L6000 OPB704 MAN4710 1LP6
    Text: so OPTOELECTRONICS PART NUMBER INDEX P a rt Numbe* Part N u m b e r Part Num ber Part N um ber 1N6264 35 CNW138 17 CQX14 35 GMC2988C 145 H11C2.300 1N6265 35 CNW138.300 17 CQX15 35 GMC7175C 133 H11C3 22 1N6266 35 CNW139 17 CQX16 35 GMC7175CA 133 H11C3.300 22


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    PDF 1N6264 1N6265 1N6266 6N135 6N136 6N137 6N138 6N139 740L6000 740L6001 ORB1134 H11F1 300 CNY17GF-2 cnw85 CQX17 L14LOB OPB704 MAN4710 1LP6