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Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD45256441, 45256841, 45256163 256M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD45256441, 45256841, 45256163 are high-speed 268,435,456 bit synchronous dynamic random-access memories, organized as 16,777,216x4x4, 8,388,608x8x4, 4,194,304x16x4 word x bit x bank , respectively.
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PD45256441,
256M-bit
216x4x4,
608x8x4,
304x16x4
54-pin
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A91A
Abstract: pd45256 toyo uPD45256441G5-A10B-9JF uPD45256841G5-A10B-9JF AYAA
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT jUPD45256441,45256841,45256163 256M-bit Synchronous DRAM 4-bank, LVTTL Description The ,uPD45256441, 45256841, 45256163 are high-speed 268,435,456 bit synchronous dynamic random-access memories, organized as 16,777,216x4x4, 8,388,608x8x4, 4,194,304x16x4 word x bit x bank , respectively.
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uPD45256441
uPD45256841
uPD45256163
256M-bit
216x4x4,
608x8x4,
304x16x4
54-pin
M13394EJ3V0DS00
A91A
pd45256
toyo
uPD45256441G5-A10B-9JF
uPD45256841G5-A10B-9JF
AYAA
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